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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Photo-acoustic spectroscopy and quantum efficiency of Yb{sup 3+} doped alumino silicate glasses

In this contribution, we analyze the effect of several preparation methods of Yb{sup 3+} doped alumino silicate glasses on their quantum efficiency by using photo-acoustic measurements in comparison to standard measurement methods including the determination via the fluorescence lifetime and an integrating sphere setup. The preparation methods focused on decreasing the OH concentration by means of fluorine-substitution and/or applying dry melting atmospheres, which led to an increase in the measured fluorescence lifetime. However, it was found that the influence of these methods on radiative properties such as the measured fluorescence lifetime alone does not per se give exact information about the actual quantum efficiency of the sample. The determination of the quantum efficiency by means of fluorescence lifetime shows inaccuracies when refractive index changing elements such as fluorine are incorporated into the glass. Since fluorine not only eliminates OH from the glass but also increases the “intrinsic” radiative fluorescence lifetime, which is needed to calculate the quantum efficiency, it is difficult to separate lifetime quenching from purely radiative effects. The approach used in this contribution offers a possibility to disentangle radiative from non-radiative properties which is not possible by using fluorescence lifetime measurements alone and allows an accurate determination of the quantum efficiency of a given sample. The comparative determination by an integrating sphere setup leads to the well-known problem of reabsorption which embodies itself in the measurement of too low quantum efficiencies, especially for samples with small quantum efficiencies.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Doped gate dielectric materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Cao, Yu↗
DOE OSTI2022

Doped gate dielectrics materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Cao, Yu↗
DOE OSTI2015

Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects

In this article, the authors have conducted an extensive investigation on the roles of intrinsic zinc defects by annealing of a batch of Te-N co-doped ZnO films. The formation and annihilation of Zn interstitial (Zn{sub i}) clusters have been found in samples with different annealing temperatures. Electrical and Raman measurements have shown that the Zn{sub i} clusters are a significant compensation source to holes, and the Te co-doping has a notable effect on suppressing the Zn{sub i} clusters. Meanwhile, shallow acceptors have been identified in photoluminescence spectra. The N{sub O}-Zn-Te complex, zinc vacancy (V{sub Zn})-N{sub O} complex, and V{sub Zn} clusters are thought to be the candidates as the shallow acceptors. The evolution of shallow acceptors upon annealing temperature have been also studied. The clustering of V{sub Zn} at high annealing temperature is proposed to be a possible candidate as a stable acceptor in ZnO.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Determination of surface recombination velocity in heavily doped silicon

A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

Watanabe, M.↗
DOE OSTI2018

First principles study on 2H–1T' transition in MoS 2 with copper

In this paper, the electronic properties of MoS 2 are strongly controlled by the structure, providing a route to their modulation. We report, based on first principles calculations, that the adsorption of metal atom Cu on the surface can induce the phase transition of MoS 2 from the semiconducting 2H to the metallic 1T' phase. Cu adsorption results in effective n-type doping of MoS 2 by charge transfer from Cu in the case of the 1T' phase. This is distinct from the behavior in the 2H phase, where Cu does not donate any charge, and it is also distinct from alkali metal adsorption, where charge is donated to both 2H and 1T' MoS 2 . Charge donation to the 1T' phase by Cu stabilizes it with respect to the 2H structure and importantly, it also reduces the energy barrier between the 2H and 1T' structures. This difference reflects the higher electronegativity of Cu, which also indicates that Cu-modified MoS 2 can be expected to be less chemically reactive than MoS 2 with alkali metal adatoms. The main atomic mechanism of the structural transition is the gliding of S atoms on the upper surface. Finally, we report the energetics of the 2H to 1T' transition with several other adatoms, Ag, Au, Ni, Pt and Pd, but none of them are as effective as Cu in inducing the transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Influence of TiO 2 on the densification behaviour of Yb 2 O 3

The effect of temperature and heating rate on the densification of ytterbia (Yb 2 O 3 ), with and without titania (TiO 2 ) doping was investigated. It is shown that up to a certain doping level, titania doping enhances the densification behaviour of ytterbia. The effect of titania doping on crystal structure confirms that titania is substitutionally incorporated in ytterbia up to the solubility limit, which corresponds well with the densification results. The increased densification rate of titania-doped ytterbia is attributed to the formation of cation vacancy and lattice distortion. Using constant heating rate experiments, the activation energy for densification has been calculated and it is shown that in the intermediate density range (60% to 85%), the activation energy is independent of the density. Furthermore, titania doping increases the activation energy for densification.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2013

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Preferential Eu Site Occupation and Its Consequences in the Ternary Luminescent Halides AB 2 I 5 : Eu 2 + ( A = Li – Cs ; B = Sr , Ba)

Several rare-earth-doped, heavy-metal halides have recently been identified as potential next-generation luminescent materials with high efficiency at low cost. AB 2 I 5 :Eu 2+ (A=Li–Cs; B=Sr, Ba) is one such family of halides. Its members, such as CsBa 2 I 5 :Eu 2+ and KSr 2 I 5 :Eu 2+ , are currently being investigated as high-performance scintillators with improved sensitivity, light yield, and energy resolution less than 3% at 662 keV. Within the AB 2 I 5 family, our first-principles-based calculations reveal two remarkably different trends in Eu site occupation. The substitutional Eu ions occupy both eightfold-coordinated B1(VIII) and the sevenfold-coordinated B2(VII) sites in the Sr-containing compounds. However, in the Ba-containing crystals, Eu ions strongly prefer the B2(VII)sites. This random versus preferential distribution of Eu affects their electronic properties. The calculations also suggest that in the Ba-containing compounds one can expect the formation of Eu-rich domains. These results provide atomistic insight into recent experimental observations about the concentration and temperature effects in Eu-doped CsBa 2 I 5 . We discuss the implications of our results with respect to luminescent properties and applications. We also hypothesize Sr, Ba-mixed quaternary iodides ABa VIII Sr VII I 5 :Eu as scintillators having enhanced homogeneity and electronic properties.

Fang, C. M.↗
DOE OSTI2025

Influence of heterovalent doping on tetrahedral N interstitial formation in dilute GaAsN alloys

Dilute alloying of GaAs with N enables bandgap tuning for near-infrared to mid-infrared optoelectronic devices. However, non-substitutional N incorporation has been linked to lower absorption and emission efficiencies in dilute-nitride-alloy-based devices, especially in those containing heterovalent dopants. Here, in this work, we examine the influence of heterovalent dopants on N incorporation mechanisms in dilute GaAs 1−x N x alloys with N composition intentionally below the threshold composition for the formation of tetrahedral N interstitials (N tetra ) in undoped GaAs 1−x N x . For undoped GaAs 1−x N x , 20% of the N incorporates in non-substitutional sites, as (N-N) As and (N-As) split interstitials. Interestingly, Si dopants induce the formation of N tetra , while Be doping has a negligible effect on the interstitial type. Although elastic interactions due to opposite signs of the misfit volumes of N tetra and N As contribute to N tetra incorporation above a threshold N composition, Si dopants reduce the threshold composition, due to the Fermi level-dependent stability of N tetra .

36 MATERIALS SCIENCE↗
DOE OSTI2017

Chemical vapor deposition of monolayer MoS 2 directly on ultrathin Al 2 O 3 for low-power electronics

Monolayer MoS 2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS 2 must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this paper, we report the chemical vapor deposition (CVD) of monolayer MoS 2 directly on 20 nm thick Al 2 O 3 grown by atomic layer deposition (ALD). The quality of the resulting MoS 2 is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al 2 O 3 ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS 2 (800 °C). Field-effect transistors (FETs) derived from these MoS 2 /Al 2 O 3 stacks show minimal hysteresis with a sub-threshold swing as low as ~220 mV/decade, threshold voltages of ~2 V, and current I ON /I OFF ratio as high as ~10 4 , where I OFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits. Finally, the system presented here concurrently optimizes multiple low-power electronics figures of merit while providing a transfer-free method of integrating monolayer MoS 2 with ultrathin high-κ dielectrics, thus enabling a scalable pathway for enhancement-mode FETs for low-power applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Impact of Isotropic Strain on Magnetic Properties of Monolayer MoSe{sub 2}-Doped with Nonmagnetic Metal and Nonmetal Atoms

Electronic and magnetic properties of MoSe{sub 2} monolayer doped with different nonmagnetic metal (Ag, Al, Li, Mg, and Na) and nonmetal (B, C, F, N, and O) elements have been studied by using the density functional theory calculations. Magnetism has been induced by Ag, Al, and Mg doping. Then, we further have studied the effect of strain on the magnetism in Al-doped MoSe{sub 2} monolayer. We have applied an isotropic strain on the system. On the one hand, the magnetism disappeared while the compressive strain was applied. On the other hand, the magnetism kept stable under the tensile strain. Moreover, we investigated the magnetic coupling in two-Al-doped MoSe{sub 2} structures under the tensile strain. Interestingly, a tunable magnetic coupling was observed. As the tensile strain increased, the magnetic coupling between two Al atoms switched from nonmagnetic (NM) to ferromagnetic (FM). The analysis of the PDOS showed that the p-p hybridization between the Al atom and its neighboring Se atoms resulted in such magnetic behavior. Our results showed some potential applications in MoSe{sub 2}-based nanoscale devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Phase evolution during spark plasma sintering of novel Si3N4-doped TiB2–SiC composite

Highlights: • The effect of Si{sub 3}N{sub 4} addition on microstructure of TiB{sub 2}–SiC composite was studied. • Fully dense TiB{sub 2}-based composite was obtained by addition of SiC and Si{sub 3}N{sub 4}. • TiC, B{sub 4}C and SiO{sub 2} were formed in Si{sub 3}N{sub 4}-free and Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC ceramics. • TiN and BN were in-situ formed only in Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC sample. - Abstract: Spark plasma sintering process was employed to fabricate TiB{sub 2}–SiC and novel Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC ceramic composites at 1900 °C for 7 min under 40 MPa. The microstructural development of TiB{sub 2}-based composites was significantly influenced by the addition of SiC as a reinforcement phase and Si{sub 3}N{sub 4} as a sintering aid. Thermodynamic assessment, X-ray diffractometry, scanning electron microscopy and energy dispersive spectroscopy disclosed the in-situ formation of TiC, B{sub 4}C and SiO{sub 2} in both samples as well as TiN and BN in the Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC sample through the chemical reactions of SiC and Si{sub 3}N{sub 4} additives with the surface oxide impurities of TiB{sub 2} particles (TiO{sub 2} and B{sub 2}O{sub 3}). The elimination of harmful oxide layers and the in-situ formation various secondary phases had remarkable influences on the sinterability and final microstructure of TiB{sub 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effect of oxygen annealing on the multiferroic properties of Ca{sup 2+} doped BiFeO{sub 3} nanoceramics

The high leakage current in divalent ion doped BiFeO{sub 3} systems is limiting their large scale application. It is clearly shown that the methodology of oxygen annealing will prove to be an effective procedure for suppressing the detrimental consequences that originate from the oxygen vacancies. The samples annealed under oxygen also show different particle morphologies and packing density that can help in tuning the relevant physical properties, viz., magnetic, ferroelectric, and magnetoelectric. The difference in magnetic behaviour in samples annealed in air and oxygen can be explained in terms of the modification in the Fe-O-Fe bonds, domain wall pinning centres, and crystal anisotropy. Another important observation is the stabilization of a dielectric anomaly near the magnetic transition temperature. This observation can make this multiferroic system very interesting for application in sensors where the change in the magnetic parameters can be observed by monitoring the electrical parameters. Detailed analysis of the dielectric and impedance curves indicate towards the presence of non-Debye type processes in samples obtained by annealing in air or oxygen. From the calculated activation energy values, the vacancy related relaxation mechanism is predominant in air annealed samples, while the oxygen annealed samples show the presence of two type of relaxation processes, viz., electron hopping mechanism stabilizes at low temperature while, at higher temperatures, the process associated with the diffusion of doubly ionized oxygen ions predominates. The ac-conductivity data suggests that the correlated barrier tunnelling mechanism, where single electron or two electrons hopping through neighbouring lattice sites leads to ac-conduction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Microstructure refinement and enhanced critical current density in binary doped SmFeAsO superconductor

The iron-pnictide Sm{sub 1−x}Ca{sub x}FeAsO{sub 1−2x}F{sub 2x} superconductor was prepared and the combined effect of electron and hole doping was studied in detail. It is observed that the binary doping using CaF{sub 2} improves the microstructure tremendously with a preferred orientation of the (00l) planes. Moreover, a maximum T{sub C} of 53.8 K and a transport J{sub C} of 880 A/cm{sup 2} (12 K), which is double to that of the F-doped sample, are achieved. The dopant CaF{sub 2} seems to be a potential candidate for solving the grain-connectivity concerns in iron-pnictides paving the way towards conductor development.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Impurity-generated non-Abelions

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an 𝑠-wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an 𝑠 superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by characteristic disorder, gate voltage induced angular momentum splitting of impurity levels, and by a proximity superconducting gap. The phase diagram exhibits two ranges of gate voltage with conventional superconducting order separated by a gate voltage range with topological superconductivity. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana fermions. Ferromagnetic transitions in the fractional quantum Hall regime may lead to the formation and electrostatic control of higher order non-Abelian excitations.

Edge states↗