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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8

Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum Capacitors

Replacement of MnO2 with conductive polymers as cathode materials in chip tantalum capacitors allows for a substantial reduction of the equivalent series resistance (ESR), improvement of frequency characteristics, and elimination of the possibility of ignition during failures. One of the drawbacks of chip polymer tantalum capacitors (CPTCs) is a relatively poor long-term stability at high temperatures. In this work, variations of capacitance, dissipation factor, and ESR in different types of capacitors including automotive grade parts from three manufacturers have been monitored during storage at temperatures from 100 ºC to 175 ºC for up to 18,000 hours. Results show that ESR is the most and capacitance the least sensitive to degradation parameter. Times to parametric failures have been simulated using a Weibull-Arrhenius model that allowed for assessments of activation energies of the degradation and prediction of times to failure at the use temperature. Degradation of CPTCs was explained by thermo-oxidative processes in conductive polymers that result in exponential increasing of the resistivity with time of ageing. This process starts after a certain incubation period that depends on packaging materials and design and corresponds to the time that is necessary to form delamination between the encapsulating molding compound and lead frame. The effectiveness of the existing qualification procedures to assure stable operation of CPTCs is discussed.

Aging↗

Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum Capacitors

Replacement of MnO2 with conductive polymers as cathode materials in chip tantalum capacitors allows for a substantial reduction of the equivalent series resistance (ESR), improvement of frequency characteristics, and elimination of the possibility of ignition during failures. One of the drawbacks of chip polymer tantalum capacitors (CPTCs) is a relatively poor long-term stability at high temperatures. In this work, variations of capacitance, dissipation factor, and ESR in different types of capacitors including automotive grade parts from three manufacturers have been monitored during storage at temperatures from 100 ºC to 175 ºC for up to 18,000 hours. Results show that ESR is the most and capacitance the least sensitive parameter to degradation. Times to parametric failures have been simulated using a Weibull-Arrhenius model that allowed for assessments of activation energies of the degradation and prediction of times to failure at the use temperature. Degradation of CPTCs was explained by thermo-oxidative processes in conductive polymers that result in exponential increase of the resistivity with time of aging. This process starts after a certain incubation period that depends on packaging materials and design and corresponds to the time that is necessary to form delamination between the encapsulating molding compound and lead frame. The effectiveness of the existing qualification procedures to assure stable operation of CPTCs is discussed.

high temperature storage (HTS)↗

Useful Life of Tantalum Capacitors

Currently, the major reliability characteristic of tantalum capacitors is the failure rate, which is a constant used to characterize random failures of electronic components. However, contemporary MnO2 and polymer tantalum capacitors have both infant mortality (IM) and wear-out (WO) failures. This requires assessments of the useful life of the parts that is limited by the time of inception of WO failures that can be determined using an adequate reliability model and results of highly accelerated life testing (HALT). In this presentation, a modified time dependent dielectric breakdown (TDDB) model is used to describe both IM and WO failures during HALT. Specifics of physical processes resulting in degradation and failures in polymer and MnO2 tantalum capacitors are discussed, and the increase of IM failures with the level of stress is explained. The model justifies exponential dependence of the acceleration factors on voltage and predicts higher values of the voltage acceleration constant for IM compared to WO failures.

tantalum capacitors↗

Guidelines for Screening, Lot Acceptance, and Derating for Polymer Tantalum Capacitors

These guidelines have been developed for NASA space projects that are planning to use new technology hermetic and chip polymer cathode tantalum capacitors. Polymer Tantalum Capacitors (PTC) selected from MIL-PRF-32700, automotive grade (AEC-Q200) parts, or COTS+ (hi-rel COTS) capacitors should be screened and qualified as suggested in Tables 1-3 and derated per section 9 below. Screening and lot acceptance tests that were carried out for a lot that is intended for flight as a part of the manufacturing process do not need to be repeated

tantalum capacitors↗

Evaluation of Elements used for Manufacturing of NanoLam Metallized Polymer Film Capacitors

Metallized polymer film capacitors (MPFC) manufactured by NanoLam technology have a better volumetric efficiency and performance that may exceed the reliability of conventional MPFCs typically used in power and high voltage systems that require high insulation resistance and low power losses. These capacitors can be also an effective replacement for electrolytic and stacked ceramic capacitors currently used in space applications looking to save significant volume and mass. This report evaluates the effects of environmental conditions including radiation and storage at room and high temperatures on the characteristics of NanoLam elements used in the production of MPFCs. Assessments of the reliability acceleration factors and predictions for the useful life are made based on highly accelerated life tests (HALT) using distributions of times to parametric failures at different stress conditions. It has been shown that even a relatively small amount of moisture absorbed at room environments in the dielectric layers may substantially change the probability of failure. In the presence of moisture, degradation processes that started after voltage application continue with time during storage.

Metallized polymer film capacitors (MPFC)↗

Evaluation of wet tantalum capacitors after exposure to extended periods of ripple current, volume 1

The application of tantalum capacitors in the Viking Lander includes both dc voltage and ripple current electrical stress, high temperature during nonoperating times (sterilization), and high vibration and shock loads. The capacitors must survive these severe environments without any degradation if reliable performance is to be achieved. A test program was established to evaluate both wet-slug tantalum and wet-foil capacitors under conditions accurately duplicating actual Viking applications. Test results of the electrical performance characteristics during extended periods of ripple current, the characteristics of the internal silver migration as a function for extended periods of ripple current, and the existence of any memory characteristics are presented.

Watson, G. W.↗

Tantalum capacitor behavior under fast transient overvoltages

Tantalum capacitors were tested to determine failure time when subjected to short-duration, high-voltage surges caused by lightning strikes. Lightning is of concern to NASA because of possible damage to critical spacecraft circuits. The test was designed to determine the minimum time for tantalum capacitor failure and the amount of overvoltage a capacitor could survive, without permanent damage, in 100 microseconds. All tested exhibited good recovery from the transient one-shot pulses with no failure at any voltage, forward or reverse, in less than 25 microseconds.

Zill, J. A.↗

Evaluation of wet tantalum capacitors after exposure to extended periods of ripple current, volume 2

The application of tantalum capacitors in the Viking Lander includes dc voltage and ripple current electrical stress, high temperature during nonoperating times (sterilization), and high vibration and shock loads. The capacitors must survive these severe environments without any degradation if reliable performance is to be achieved. A test program was established to evaluate both wet-slug tantalum and wet-foil capacitors under conditions accurately duplicating actual Viking applications. Test results of the electrical performance characteristics during extended periods of ripple current, the characteristics of the internal silver migration as a function of extended periods of ripple current, and the existence of any memory characteristics are presented.

Ward, C. M.↗

Technological development of high energy density capacitors

A study was conducted to develop cylindrical wound metallized film capacitors rated 2 micron F 500 VDC that had energy densities greater than 0.1J/g. Polysulfone (PS) and polyvinylidene (PVF2) were selected as dielectrics. Single film PS capacitors of 0.2J/g (uncased) were made of 3.75 micron material. Single film PVF2 capacitors of 0.19J/g (uncased) were made of 6.0 micron material. Corona measurements were made at room temperature, and capacitance and dissipation factor measurements were made over the ranges 25 C to 125 C and 120 Hz to 100 kHz. Nineteen of twenty PVF2 components survived a 2500 hour dc plus ac life test. Failure analyses revealed most failures occurred at wrinkles, but some edge failures were also seen. A 0.989g case was designed. When the case was combined with the PVF2 component, a finished energy density of 0.11J/g was achieved.

Parker, R. D.↗

The tantalum-cased tantalum capacitor

Tantalum-cased tantalum capacitors were tested with regard to temperature stability, capacitance ratio, surge current capabilities, shock, vibration, and thermal shock. They were found to be superior to the conventional wet slug tantalum capacitor cased in silver, since they are more resistant to sulfuric acid. The tantalum-cased tantalum capacitors are widely accepted for use in critical electronic equipment because of their excellent performance and reliability.

Moynihan, J. D.↗

Regulated high efficiency, lightweight capacitor-diode multiplier dc to dc converter

A voltage multiplier having a capacitor-diode voltage multiplying network is disclosed which is fed with voltage pulses from a dc source through a first switching means. Pulses of a second polarity are also supplied through a second switching means to the input of the capacitor-diode voltage multiplier from a second dc source whose voltage is adjustable to change the voltage of the pulses of second polarity. The switching means are alternately rendered conducting by signals from a control circuit. The second dc source may be controlled by a voltage comparator which compares the output voltage of the capacitor-diode voltage multiplier to the reference source.

Harrigill, W. T., Jr.↗

Unstable insulation resistance in ceramic capacitors

The effects of low and varying values of insulation resistance (IR) and their significance in the cause of failure in ceramic capacitors were investigated. Two specific instances involving hardware failure involving ceramic capacitors were examined. It is shown that monolithic, multilayer ceramic capacitors may exhibit low and unstable IR at low voltages, or exhibit no voltage. Other significant results are reported.

Holladay, A. M.↗

Influence of current needs on the advancement of aluminum electrolytic capacitors

The need for cost effective, high performance, long life capacitors with improved reliability is discussed. It is shown that a low cost, miniature aluminum capacitor, with improved reliability and proven life, can be produced with existing technology. It is further shown that the capacitor can be specified for 125 C life and shelf test requirements, and meet established standards for their parametric performance.

Moresi, J. A.↗

Capacitor-Test System

Polycarbonate film capacitors tested for leakage paths with microprocessor controlled multiplexer test sequence. Microprocessor based capacitor test system simultaneously monitors 80 capacitors.

Ott, F. M.↗

High-current, high-frequency capacitors

The NASA Lewis high-current, high-frequency capacitor development program was conducted under a contract with Maxwell Laboratories, Inc., San Diego, California. The program was started to develop power components for space power systems. One of the components lacking was a high-power, high-frequency capacitor. Some of the technology developed in this program may be directly usable in an all-electric airplane. The materials used in the capacitor included the following: the film is polypropylene, the impregnant is monoisopropyl biphenyl, the conductive epoxy is Emerson and Cuming Stycast 2850 KT, the foil is aluminum, the case is stainless steel (304), and the electrode is a modified copper-ceramic.

Renz, D. D.↗

Material considerations for high frequency, high power capacitors

Dielectric materials chosen for use in this high frequency, high power capacitor must endure hard vacuum conditions, high currents (up to 125 A rms), and frequencies up to 40 kHz. Temperature requirements for this type of capacitor are that capacitor operation must be efficient up to 125 C. A more stringent requirement for the sold dielectric is that the temperature coefficient of dissipation factor should indicate self stabilization well below 125 C. In addition, the dielectric temperature coefficient of capacitance should be negative.

White, W.↗

Determining Internal Connections in Capacitors

Simple electrical test shows which terminals connected to outer capacitor foil. Test makes it unnecessary to resort to X-ray inspection to distinguish terminals. When outer foil of capacitor is attached to ungrounded signal-generator output lead, oscilloscope displays higher waveform amplitude. When outer foil is joined to grounded signalgenerator output lead, waveform amplitude is lower. Test also used to determine internal connections in multiple-element capacitors.

Ott, F. M.↗

MOSFET and MOS capacitor responses to ionizing radiation

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Benedetto, J. M.↗