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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Sputter etching of hemispherical bearings

Technique was developed for fabricating three dimensional pumping grooves on gas bearings by sputter etching. Method eliminates problems such as groove nonuniformity, profile, and finish, which are associated with normal grooving methods.

Schiesser, R. J.↗
NASA NTRS1972

Computer controlled performance mapping of thermionic converters: effect of collector, guard-ring potential imbalances on the observed collector current-density, voltage characteristics and limited range performance map of an etched-rhenium, niobium planar converter

The effect of collector, guard-ring potential imbalance on the observed collector-current-density J, collector-to-emitter voltage V characteristic was evaluated in a planar, fixed-space, guard-ringed thermionic converter. The J,V characteristic was swept in a period of 15 msec by a variable load. A computerized data acquisition system recorded test parameters. The results indicate minimal distortion of the J,V curve in the power output quadrant for the nominal guard-ring circuit configuration. Considerable distortion, along with a lowering of the ignited-mode striking voltage, was observed for the configuration with the emitter shorted to the guard ring. A limited-range performance map of an etched-rhenium, niobium, planar converter was obtained by using an improved computer program for the data acquisition system.

Manista, E. J.↗
NASA NTRS1972

Computer acquired performance data from an etched-rhenium, molybdenum planar diode

Performance data from an etched-rhenium, molybdenum thermionic converter are presented. The planar converter has a guard-ringed collector and a fixed spacing of 0.254 mm (10 mils). The data were acquired by using a computer and are available on microfiche as individual or composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E, collector T sub C and cesium reservoir T sub R. The composite plots have constant T sub E, and varying T sub C or T sub R, or both. The envelope and composite plots having constant I sub E are presented. The diode was tested at increments between 1500 and 2000 K for the emitter, 750 and 1100 K for the collector, and 540 and 640 K for the reservoir. In all, 774 individual current, voltage curves were obtained.

Manista, E. J.↗
NASA NTRS1972

JPL P/N 71 x 12400 etched disc filter

The results are presented of a glass bead test conducted with a JPL P/N 71 x 12400 etched disk filter assembly to determine the largest diameter spherical glass bead that would transmit through the filter assembly. It was found that the largest glass bead transmitted was 16 microns in diameter.

Source record↗
NASA NTRS1973

Mars: South polar pits and etched terrain

Martian south polar pits and etched terrain attest to alternating episodes of eolian deposition and erosion. Sometimes the south polar area has served as a sump for the accumulation of airborne debris and associated particles of frozen volatiles. At other times, the wind patterns or wind effectiveness change, and the atmosphere begins to remove the blanket of material it has earlier spread over the south polar region.

Sharp, R. P.↗
NASA NTRS1979

The Development of a Method of Producing Etch Resistant Wax Patterns on Solar Cells

The first quarter of a one-year program to investigate the production of patterned etch resistant wax coatings on solar cell substrates by printing is reported. Master molds for printing plates were produced for the plates. The resist wax is being studied to determine its relevant physical properties. A printing device is currently in design, and material costs are being compiled as first step in a cost analysis task. All phases of the project are proceeding according to schedule. No specific phases are yet completed.

Pastirik, E.↗
NASA NTRS1980

Ion-beam etching enhances adhesive bonding

Metals and fluoropolymers exposed to 0.5 to 1.0 keV argon ions at current densities of 0.2 to 1.5 mA/sq cm develop surface texturing that increases tensile and shear strength of epoxy bonds. Bonds are 46 to 100 percent stronger than those of chemically etched surfaces. Metals require 3 to 4 hours of bombardment to become properly textured. Fluoropolymers require 5 seconds to 30 minutes. Ion beam will not texture nickel. Unlike chemical treatments, bonding of fluoropolymers can be done days or months after ion treatment.

Banks, B. A.↗
NASA NTRS1982

Acid Solutions for Etching Corrosion-Resistant Metals

New study characterized solutions for etching austenitic stainless steels, nickel-base alloys, and titanium alloys (annealed). Solutions recommended for use remove at least 0.4 mil of metal from surface in less than an hour. Solutions do not cause intergranular attack on metals for which they are effective, when used under specified conditions.

Simmons, J. R.↗
NASA NTRS1982

Plasma Etching Improves Solar Cells

Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

Bunyan, S. M.↗
NASA NTRS1984

Etching of diamond with argon and oxygen ion beams

The angular dependences of the sputter yield of (100) single crystal diamond under argon and oxygen ion beams were investigated. For argon ion beams a large increase in the sputter yield was observed as the angle of incidence was increased from the normal, with a maximum occurring at approximately 60 deg from the normal. The magnitude of the increase and the angle at which the maximum was observed were dependent on the ion energy and species. The shape of the yield versus angle of incidence curve indicated the presence of a highly damaged surface layer. Large deviations from this curve were observed where ion incidence was along channeling directions. Studies with oxygen ion beams showed almost no angular dependence for 500 eV ions while at an energy of 1000 eV the angular dependence was similar to that for argon ions. At normal incidence the yield for 500 eV oxygen ions was seven times larger than that for 500 eV argon ions. For 1000 eV oxygen and argon ions the corresponding ratio is only 2.5. Implications for mechanisms of inert and reactive ion etching are discussed. Application of the data to ion beam shaping of diamond tips for ultrahigh pressure research is discussed.

Whetten, T. J.↗
NASA NTRS1986

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.↗