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Results for “ION IMPLANTATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Xenon diffusion following ion implantation into feldspar - Dependence on implantation dose

The diffusion properties of xenon implanted into feldspar, a major mineral in meteorites and lunar samples, are investigated in light of the importance of xenon diffusion in the interpretation of early solar system chronologies and the retention time of solar-wind-implanted Xe. Known doses of Xe ions were implanted at an energy of 200 keV into single-crystal plagioclase targets, and depth profiles were measured by alpha particle backscattering before and after annealing for one hour at 900 or 1000 C. The fraction of Xe retained following annealing is found to be strongly dependent on implantation dose, being greatest at a dose of 3 x 10 to the 15th ions/sq cm and decreasing at higher and lower doses. Xe retention is also observed to be unaffected by two-step anneals, or by implantation with He or Ar. Three models of the dose-dependent diffusion properties are considered, including epitaxial crystal regrowth during annealing controlled by the extent of radiation damage, the creation of trapping sites by radiation damage, and the inhibition of recrystallization by Xe during annealing

Melcher, C. L.↗
NASA NTRS1982

Non-mass-analyzed ion implantation equipment for high volume solar cell production

Equipment designed for junction formation in silicon solar cells is described. The equipment, designed for a production level of approximately one megawatt per year, consists of an ion implanter and annealer. Low cost is achieved by foregoing the use of mass analysis during the implantation, and by the use of a belt furnace for annealing. Results of process development, machine design and cost analysis are presented.

Armini, A. J.↗
DOE OSTI2022

Thermal diffusivity recovery and defect annealing kinetics of self-ion implanted tungsten probed by insitu transient grating spectroscopy

Tungsten is a promising candidate material for plasma-facing armour components in future fusion reactors. A key concern is irradiation-induced degradation of its normally excellent thermal transport properties. In this comprehensive study, thermal diffusivity degradation in ion-implanted tungsten and its evolution from room temperature (RT) to 1073 K is considered. Five samples were exposed to 20 MeV self-ions at RT to achieve damage levels ranging from 3.2 x 10 -4 to 3.2 displacements per atom (dpa). Transient grating spectroscopy with in-situ heating was then used to study thermal diffusivity evolution as a function of temperature. Using a kinetic theory model, an equivalent point defect density is estimated from the measured thermal diffusivity. The results showed a prominent recovery of thermal diffusivity between 450 K and 650 K, which coincides with the onset of mono-vacancy mobility. After 1073 K annealing samples with initial damage of 3.2 x 10 -3 dpa or less recover close to the pristine value of thermal diffusivity. For doses of 3.2 x 10 -2 dpa or higher, on the other hand, a residual reduction in thermal diffusivity remains even after 1073 K annealing. Transmission electron microscopy reveals that this is associated with extended, irradiation-induced dislocation structures that are retained after annealing. A sensitivity analysis shows that thermal diffusivity provides an efficient tool for the assessing total defect content in tungsten up to 1000 K.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Exceptional radiation resistance of hardened amorphous SiC under high-temperature hydrogen ion implantation

This study provides a compelling comparison of the structural and mechanical responses of single-crystal silicon carbide (sc-SiC), nanocrystalline silicon carbide (nc-SiC), and amorphous silicon carbide (am-SiC) to hydrogen ion implantation at 650 °C across three distinct fluences: low, medium, and high (LF, MF, HF). While both sc-SiC and nc-SiC exhibit blistering, microcracking, and exfoliation, am-SiC remains free of blisters, demonstrating superior resilience. Notably, nc-SiC, with its high density of stacking faults (SFs), requires a higher fluence to initiate blistering compared to sc-SiC. At high fluences, hydrogen accumulation at grain boundaries (GBs) in nc-SiC elevates internal gas pressure, intensifying exfoliation. In sc-SiC, blistering leads to increased hardness, whereas in nc-SiC, the degradation of the SF structure results in a reduction in hardness. In contrast, am-SiC undergoes structural relaxation during irradiation, resulting in a significant increase in hardness while maintaining its structural integrity, with only the formation of nano-sized spherical bubbles observed. Furthermore, these findings highlight the exceptional suitability of am-SiC for nuclear applications, where resistance to radiation-induced microcracking is critical.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tuning the surface energy of fluorinated diamond-like carbon coatings via plasma immersion ion implantation plasma-enhanced chemical vapor deposition with 1,1,1,2-tetrafluoroethane

Here, we demonstrate an environmentally friendly and scalable method to create fluorine-doped diamond-like carbon (F-DLC) coatings using plasma immersion ion implantation plasma-enhanced chemical vapor deposition (PIII-PECVD) with 1,1,1,2-tetrafluoroethane. F-DLC films tend to have low wettability and good mechanical flexibility, which make them suitable for applications in biomedical devices and antibiofouling surfaces. We report on the effects of fluorine incorporation on the surface chemistry, surface energy, and morphology of these coatings, showing that our method is effective in increasing the fluorine content in the F-DLC up to 40%. We show that the addition of fluorine leads to a decrease in surface energy, which is consistent with a reduction in surface wettability.

Contact angle↗
NASA NTRS1994

Making CoSi(2) Layers By Ion Implantation

Monolithic photovoltaic batteries containing vertical cells include buried CoSi(2) contact layers. Vertical-junction photovoltaic cells in series fabricated in monolithic structure. N- and p-doped silicon layers deposited epitaxially. The CoSi(2) layers, formed by ion implantation and annealing, serve as thin, low-resistance ohmic contacts between cells.

Namavar, Fereydoon↗
DOE OSTI2022

Modulating the Pseudoelastic Response of Nitinol Using Ion Implantation

This work explores whether ion beam modification can be used to modulate the austenite to martensite phase transformation in Nickel-Titanium (NiTi), thereby achieving novel or localized transformation properties in near-surface regions. We report this could provide alternatives to laser shot peening or other surface treatment methods and possibly expand applications in biomedical, aerospace, and other fields. Irradiation induces defects and internal stress that can serve as nucleation and/or pinning sites for the phase transformation. Thus, it can augment more convention- al approaches, including alloying, severe mechanical work, grain size reduction, and precipitation of coherent precipitates. A range of outcomes is possible in principle, including a shift of the critical stress or temperature for onset of the transformation, linearization, reduction of hysteresis, stabilization, and extent of transformation strain.

36 MATERIALS SCIENCE↗
NASA NTRS1971

Effects of positive ion implantation into antireflection coating of silicon solar cells

The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.

Middleton, A. E.↗
NASA NTRS1972

Mg and Be ion implanted GaAs.

Description of methods for generating desired Be and Mg ions and producing the electrical properties of p-type layers by implanting these ions in GaAs substrates. It is shown that the p-type layers thus produced have large hole concentrations and mobilities.

Hunsperger, R. G.↗
DOE OSTI2024

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or “doping limit” is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2–3 × 10 18 cm –3 , the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >10 19 cm –3 , exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (~80–260 cm 2 /V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ~1000–2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be “deactivated” by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1974

The effect of Be/+/ ion implanted exponential and uniform impurity profiles on the electrical characteristics of GaAs solar cells

The high surface recombination velocity is the major deterrent to obtaining efficient GaAs solar cells. If, however, an electric field is built in at the surface, the carriers will be swept away from the surface thus minimizing the surface recombination velocity problem. It has been previously shown theoretically that an exponential impurity distribution in the doped region of the cell results in a built-in electric field. Ion implantation was used to produce solar cells with an exponential impurity profile and cells with uniform profiles. It is shown that cells with an exponential impurity profile have higher open-circuit voltage, fill factors, and spectral response than those with a uniform impurity profile.

Vaidyanathan, K. V.↗
NASA NTRS1991

Comparison of observed and calculated implanted ion distributions outside Comet Halley's bow shock

This paper compares calculated and measured energy spectra of implanted H(+) and O(+) ions on the assumption that the pickup geometry is quasi-parallel and about 1 percent of the waves generated by the cometary pickup process propagate backward (toward the comet). The model provides a good description of the implanted O(+) and H(+) energy distribution near the pickup energies. The thickness of the implanted ion velocity distribution shells was nearly constant between 2.5 and 1.2 million km (just outside the shock) along the inbound Giotto trajectory. The explanation is that the velocity diffusion coefficient and characteristic diffusion time vary approximately as 1/r and r, respectively, and therefore their product (which determines the velocity shell thickness) remains nearly constant.

Gombosi, T. I.↗
DOE OSTI2019

Effects of Zr Ion Implantation on Surface Mechanical Properties and Corrosion Resistance of Pure Magnesium

Zirconium (Zr) was implanted into pure Mg by metal vapor vacuum arc (MEVVA) at the dose of 2 × 10{sup 16} ions/cm{sup 2} at room temperature. The surface characteristics of Zr-implanted Mg were analyzed by the Stopping and Range of Ions in Matter software (SRIM) and x-ray photoelectron spectroscopy (XPS), the surface nanohardness and tribological behavior were measured through nanoindentation and a friction-abrasion testing machine, and the corrosion resistance of Zr-implanted Mg was evaluated by electrochemical measurement and immersion test in simulated body fluid (SBF). The results demonstrated that a gradient modified layer composed of MgO, Mg(OH){sub 2}, ZrO{sub 2} and Zr was formed on the near surface of pure Mg and the nanohardness of pure Mg was improved by 48%. Furthermore, the Zr-implanted Mg exhibited a more positive corrosion potential of − 1.43 V (versus SCE) and a lower corrosion current density of 19.9 μA/cm{sup 2}, and localized corrosion was effectively retarded during 24 h immersion in SBF, suggesting that the corrosion resistance of pure Mg was remarkably improved after Zr ion implantation. The mechanisms of surface strengthening and improved corrosion resistance were also discussed in this paper.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Comment on 'Comparison of observed and calculated implanted ion distributions outside Comet Halley's bow shock' by T. I. Gombosi, M. Neugebauer, A. D. Johnstone, A. J. Coates, and D. E. Huddleston

It is argued that the formulation used by Gombosi (1991) does not distinguish between two fundamental types of resonant interactions (those between cometary pickup ions and LF electromagnetic waves). Two problems arise from using their overly simplified expressions. The wave polarization of the solar wind Alfven wave is not purely right-handed, and values from alpha sub com and alpha sub sw are not well known, nor are the 'polarizations' of the 'backward'-going waves in either case. Gombosi et al. discuss the antisunward vs the sunward propagating solar wind Alfven wave, and assume a reasonable value of 0.2 for alpha sub sw. However, alpha sub com is totally unknown. It is concluded that a more correct analysis of wave polarization can lead to significant changes in the formulation and results from Gombosi et al. In his reply Gombosi argues that his simplified wave-particle interaction model is consistent with Giotto observations and plasma kinetic simulations and it leads to a reasonable approximation of the implanted ion transport coefficients. The more complicated approach suggested by Tsurutani & Thorne (1993) requires the introduction of several ad hoc parameters and it does not lead to any change of the energy diffusion coefficient.

Tsurutani, Bruce T.↗
NASA NTRS1974

GaAs transistors formed by Be or Mg ion implantation

N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.

Hunsperger, R. G.↗
DOE OSTI2023

Taming the Pseudoelastic Response of Nitinol Using Ion Implantation

Implantation of Ni 50.5 Ti 49.5 wire with 30 MeV Ni 6+ ions at doses (< 0.1 DPA) typically smaller than employed in the literature is shown to systematically alter the pseudoelastic response, with extrema in Berkovich nanoindentation load (+50%), hysteresis (–60%), and recoverable displacement (–19%) occurring at ~ 3.6 μm below the implantation surface. These extraordinary values are attributed to ~ 10 to 20 nm amorphous clusters that constrain the stress-induced B2-B19' phase transformation. This is substantiated by phase field simulations of crystalline-amorphous composites and molecular dynamics simulations of crystalline-vacancy cluster composites showing the spatial refinement of martensite caused by nm-scale defects. Finally, the results suggest that ion implantation may potentially expand the processing and performance space for NiTi, by creating amorphous defects at smaller length scales than dislocation substructures produced by conventional deformation processing.

36 MATERIALS SCIENCE↗