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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Emerging Fuel Cell Technology Being Developed: Offers Many Benefits to Air Vehicles

Fuel cells, which have recently received considerable attention for terrestrial applications ranging from automobiles to stationary power generation, may enable new aerospace missions as well as offer fuel savings, quiet operations, and reduced emissions for current and future aircraft. NASA has extensive experience with fuel cells, having used them on manned space flight systems over four decades. Consequently, the NASA Glenn Research Center has initiated an effort to investigate and develop fuel cell technologies for multiple aerospace applications. Two promising fuel cell types are the proton exchange membrane (PEM) and solid oxide fuel cell (SOFC). PEM technology, first used on the Gemini spacecraft in the sixties, remained unutilized thereafter until the automotive industry recently recognized the potential. PEM fuel cells are low-temperature devices offering quick startup time but requiring relatively pure hydrogen fuel. In contrast, SOFCs operate at high temperatures and tolerate higher levels of impurities. This flexibility allows SOFCs to use hydrocarbon fuels, which is an important factor considering our current liquid petroleum infrastructure. However, depending on the specific application, either PEM or SOFC can be attractive. As only NASA can, the Agency is pursuing fuel cell technology for civil uninhabited aerial vehicles (UAVs) because it offers enhanced scientific capabilities, including enabling highaltitude, long-endurance missions. The NASA Helios aircraft demonstrated altitudes approaching 100,000 ft using solar power in 2001, and future plans include the development of a regenerative PEM fuel cell to provide nighttime power. Unique to NASA's mission, the high-altitude aircraft application requires the PEM fuel cell to operate on pure oxygen, instead of the air typical of terrestrial applications.

Walker, James F.↗
DOE OSTI2020

Water and Ammonia Desorption from 5A Zeolite

Demonstrate adsorption and desorption characteristics of water and ammonia on 5A zeolite during regeneration conditions using a Thermogravimetric analyzer (TGA) on samples previously evaluated by residual gas analyzer (RGA)/mass balance. Molecular sieve (zeolite) adsorbents have the following characteristics: Crystalline alumino-silicates containing pores or 'cages' that adsorb water or other molecules. Polar compound are adsorbed with high loading even at very low concentrations of the fluid. A 5A molecular sieve was chosen for its ability to adsorb both water and ammonia (NH{sub 3}) from a carrier gas stream. Preliminary RGA/mass balance testing indicated: 5A zeolite captured both NH{sub 3} and water as anticipated based on molecular size; Reloading showed limited success after zeolite heated beyond manufacturer recommended operating conditions: Steam dealumination theorized cause; Tests were reprioritized to focus on NH{sub 3} removal and end of life potential holdup of NH{sub 3} and water on 5A zeolite material. TGA measures a sample's weight and volatile composition as it is heated or cooled in a furnace. TGA heats sample to release volatile materials, (change in mass is measured). MS detects/measures low levels of impurities. Perform TGA desorption of zeolite samples taken at the following conditions tested with RGA (RGA results not shown here): Initial Bakeout conditions: hydrogen carrier gas, slowly raise temp to approximately 300 deg. C until desired moisture content <<100 ppm is achieved. Water loading (re-loading): argon carrier gas through bubbler until breach is observed. Ammonia loading (re-loading): hydrogen carrier gas through system. Regenerations/End of life conditions: hydrogen carrier gas, raise temp to approximately 300 deg. C, then slowly to 450 deg. C (end of life). After end of life testing less than 4% of the total mass was residual ammonia or water at bakeout conditions. Peak water and ammonia removal occurred around 275 deg. C and 150 deg. C respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1971

Effects of positive ion implantation into antireflection coating of silicon solar cells

The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.

Middleton, A. E.↗
DOE OSTI2024

Anderson impurity mechanism for a multi-level model in δ-Pu

Abstract Electronic correlations and spin–orbit interactions in plutonium create variations in the bonding behavior of each of its allotropes. In δ -Pu, the 5f electrons lie at the tipping point between itinerant and localized behavior which has made the use of mixed-level models successful in describing its mechanical properties. The mechanism for the emergence of a mixed-level model has not yet been understood. We use a series of density functional theory approximations to understand the interactions that create a mixed-level description of δ -Pu which leads to accurate physical properties. With the intersite interactions present in the hybrid functional, we show that a single 5f electron engages in orbital-selective bonding that can be understood with an Anderson impurity picture. The Anderson model gives us a mechanism to understand how the bonding in δ -Pu evolves as a function of the interactions in the material such that we obtain both the accuracy and physics of the multi-level models from ab initio theory.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2020

Spin-orbit quantum impurity in a topological magnet

Quantum states induced by single-atomic impurities are at the frontier of physics and material science. While such states have been reported in high-temperature superconductors and dilute magnetic semiconductors, they are unexplored in topological magnets which can feature spin-orbit tunability. Here we use spin-polarized scanning tunneling microscopy/spectroscopy (STM/S) to study the engineered quantum impurity in a topological magnet Co 3 Sn 2 S 2 . We find that each substituted In impurity introduces a striking localized bound state. Our systematic magnetization-polarized probe reveals that this bound state is spin-down polarized, in lock with a negative orbital magnetization. Moreover, the magnetic bound states of neighboring impurities interact to form quantized orbitals, exhibiting an intriguing spin-orbit splitting, analogous to the splitting of the topological fermion line. Our work collectively demonstrates the strong spin-orbit effect of the single-atomic impurity at the quantum level, suggesting that a nonmagnetic impurity can introduce spin-orbit coupled magnetic resonance in topological magnets.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Characterization and controllability of radiated power via extrinsic impurity seeding in strongly negative triangularity plasmas in DIII-D

Experiments with extrinsic impurity seeding in strongly negative triangularity shapes in DIII-D achieved radiated power fractions (relative to input power) of up to ≈85% total radiation and ≈55% core radiation in steady-operating conditions. The relationship between core and total radiation was sensitive to impurity species and input power. Attempts to reach higher radiation levels via higher impurity flows resulted in radiative collapse disruptions. Nitrogen, neon, argon, and krypton were tested. Injection was by gas puffing, usually controlled by feeding back real-time estimates for core or total radiating fractions ($P_\textrm{rad} / P_\textrm{input}$). Argon and krypton were controlled by feeding back total radiating fraction, whereas neon was controlled by feeding back the core radiating fraction, due to the lower efficiency of neon as a divertor radiator. Nitrogen flows were pre-programmed. Reasonable total $P_\textrm{rad}$ control target following was achieved with argon or krypton. Control was more challenging with the neon/core radiation configuration, which was more prone to slow response and overshooting of the control target. Poor particle removal contributed to the control challenge: neon particle inventory within the last closed flux surface was roughly constant for up to 1 s (the longest duration tested) after neon injection was halted. However, separate experiments with laser-blow off of non-recycling impurities measured a short impurity confinement time, on the scale of the energy confinement time of ∼100 ms. Modeling with the Aurora impurity transport simulation matched experimental neon density profiles with full recycling (R = 1.0) and weak pumping but predicted rapid decreases in neon inventory if pumping were increased or recycling decreased. This indicates that changes outside the confined plasma (adding a well-placed pump) would improve controllability for all highly recycling species.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Doping topological Dirac semimetal with magnetic impurities: Electronic structure of Mn-doped Cd 3 ⁢As 2

The prospect of transforming a Dirac topological semimetal (TSM) into a Weyl TSM phase, following doping by magnetic impurities, is central to TSM applications. The magnetic field from polarized 𝑑 levels of magnetic impurities produces a field with a sharp local structure. To what extent magnetic impurities act in the same manner as an applied field and what are the effects of such a field on the electronic structure of a Dirac TSM are the subject of this paper. We present electronic structure calculations of bulk Cd 3 ⁢As 2 with substitutional doping of Mn impurities in the dilute alloy range. Quasiparticle 𝐺⁡𝑊 (QS⁢𝐺⁡𝑊) ab initio electronic structure calculations are used in conjunction with 𝑘 · 𝑝 model Hamiltonian calculations. As expected, we observe the splitting of the Dirac points into pairs of Weyl points following the doping with Mn. We also show that the electronic structure of Mn-doped Cd 3⁢ As 2 can be emulated by the electronic structure of pristine Cd 3⁢ As 2 with an appropriate external magnetic field. Some properties of the conductivity of bulk Cd 3 ⁢As 2 for different magnetic field orientations are also investigated. Our results inform future opportunities for unique device functionality based on band structure tuning not found in conventional magnetic Weyl TSM.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates

N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature aided in removing native surface oxides and impurities from the N-polar surface of the substrate enabling successful homoepitaxy. Subsequent epitaxial growth of the AlN layer on the in situ cleaned substrates, grown in a sufficiently high Al droplet regime, exhibited smooth surface morphologies with clean and wide atomic steps. KOH etch studies confirmed the N-polarity of the homoepitaxial films. Secondary ion mass spectrometry profiles show Si and H impurity concentrations below the noise levels, whereas O and C impurity concentrations of [Formula: see text] and [Formula: see text] atoms/cm 3 are observed, respectively. Although the structural defect densities are low, they interestingly appear as inversion domains of different dimensionalities.

Singhal, Jashan↗
DOE OSTI2020

Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence

Cathodoluminescence (CL) is used as a quantitative characterization technique to probe impurities at the metal-organic chemical vapor deposition (MOCVD) grown GaN-on-GaN homoepitaxial interfaces. CL intensity contrast shows a strong correlation with the interfacial impurity concentrations. Based on the analysis of recombination mechanisms of electron beam induced non-equilibrium carriers, an analytical model is proposed to quantitatively determine the impurity concentrations from CL intensity. The extracted interfacial impurity concentrations from the analytical model show a good agreement with the compensation levels obtained from capacitance-voltage measurement, signifying the potential of CL for probing the quantitative impurity levels in GaN-on-GaN structures. This approach can also be extended to be applied in other material systems.

Chen, Zhaoying↗
NASA NTRS2005

Methods for Anticipating Problems with Electrical Wiring

Passive and active methods for anticipating problems with electrical wiring are provided. An insulative material in contact with an electrical conductor has at least one impurity that is impregnated in the insulative material and/or disposed thereon. An environment around the electrical conductor is monitored for the presence or the level of the impurity(ies) emanating from the insulative material in the form of a gaseous effluent. An alarm signal is generated when a predetermined level of the gaseous effluent is detected.

William T Yost↗
NASA NTRS1976

The effect of secondary impurities on solar cell performance

Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.

Hill, D. E.↗
NASA NTRS1980

Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

Hopkins, R. H.↗
NASA NTRS2000

The Effect of Hydrogen Annealing on the Impurity Content of Alumina-Forming Alloys

Previously, the effect of hydrogen annealing on increasing the adhesion of Al2O3 scales had been related to the effective desulfurization that occurred during this process. The simultaneous reduction of other impurities has now been re-examined for up to 20 impurity elements in the case of five different alloys (NiCrAl, FeCrAl, PWA 1480, Rene'142, and Rene'N5). Hydrogen annealing produced measurable reductions in elemental concentration for B, C, Na, Mg, P, K, Sr, or Sn in varying degrees for at least one and up to three of these alloys. No single element was reduced by hydrogen annealing for all the alloys except sulfur. In many cases spalling occurred at low levels of these other impurities, while in other cases the scales were adherent at high levels of the impurities. No impurity besides sulfur was strongly correlated with adhesion.

Smialek, James L.↗
NASA NTRS1985

Impurities in silicon solar cells

Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

Hopkins, R. H.↗
DOE OSTI2026

Effect of Oxidizing Impurities on the Corrosion Behavior of Structural Alloys Exposed to MgCl 2 Molten Salt Vapor

The corrosion behavior of structural alloys SS304 and IN617 when exposed to vapors of MgCl 2 molten salt at 764 °C for 100 h in an argon atmosphere was investigated as a function of the level of oxidizing impurities (e.g., NaOH) present in the salt. Increasing the concentration of oxidizing impurities in the salt caused an increase in corrosion in both structural alloys, as measured by Cr depletion layers. A poorly adhered oxide scale layer containing Mg, Al, and Cr was observed on the surface of the metals, and local attack was observed as well. The Ni-based IN617 showed lower Cr depletion and less scale formation than the Fe-based SS304. These results demonstrate that oxidizing impurities in the molten salt will impact the vapor phase corrosion for structural members exposed to the molten salt headspace. This finding is highly relevant for understanding the effects of the vapor phase in molten salt applications, including molten salt thermal energy storage, molten salt nuclear reactors, and molten salt electrochemistry.

25 ENERGY STORAGE↗
DOE OSTI2021

Simulation of the SPARC plasma boundary with the UEDGE code

Here in this work, the UEDGE edge transport code is used to examine conditions in the SPARC divertor and edge plasma for various levels of carbon impurity and power from the core (P SOL ). A double-null magnetic configuration is simulated assuming up-down symmetry in geometry and physics. The anomalous heat and particle transport coefficients are tuned to match empirical predictions for SPARC's midplane density profiles, target plate heat flux profiles, and inner/outer divertor power sharing. Convective transport is included on the low-field side, while on the high-field side the transport is modeled as purely diffusive. Hydrogen neutrals are modeled as a fluid with inertial effects, and a carbon impurity is included using the fixed-fraction model. We find that detachment induced by impurity seeding could significantly reduce the heat flux to the divertor surfaces in the SPARC tokamak. At P SOL = 28 MW (the value predicted for SPARC's full-power H-mode scenario) cases with both divertor legs detached were obtained with a carbon impurity fraction between 0.3%–1.4%, far below Z eff limits for SPARC. When the plasma in the outer leg is detached, the peak heat flux density perpendicular to the target plate is below 1 MW m -2 , electron and ion temperatures are less than 1.5 eV, and momentum detachment is observed. However, the detachment state is found to be sensitive to the side-wall boundary conditions, the level of neutral pumping, and the target plate tilt. Finally, a broadly similar SOLPS simulation of SPARC is used to assess the appropriateness of the simpler impurity and neutral models used in UEDGE.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗