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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Pool Boiling Reliability Tests and Degradation Mechanisms of Microporous Copper Inverse Opal (CuIOs) Structures: Preprint

The rising power density in electronic systems requires thermal management solutions that are both high-performing and reliable. Porous materials such as Copper Inverse Opals (CuIOs) have unique structural features, including high permeability and high thermal conductivity, to enhance pool boiling performance. However, there is little understanding of the degradation mechanism of such porous materials under pool boiling conditions. In this study, samples of 10-micrometer-thick CuIOs with 4.8-micrometer diameter, covering silicon substrate of area 11-mm by 11-mm, with various heated areas ranging from 2.5-mm by 2.5-mm to 10-mm by 10-mm, were tested in 100 degrees C deionized water at a constant heat flux of 110 watts per square cm for 3-7 days. The combined effect of erosion and corrosion caused structural degradation of the CuIOs. The directly heated area had the most severe degradation while the edge of the heater and the unheated area showed progressively less degradation, maintaining some CuIOs structure even after the 7-day reliability test. Among all the tested samples with various heater sizes, the 2.5-mm by 2.5-mm heater sample - in which the heater size was designed to be comparable to the water bubble characteristic length - had the largest critical heat flux (CHF) up to 300 watts per square cm with a superheat of approximately 13 degrees C. Additionally, CuIOs with a smaller heated area performed better in terms of reliability. This study offers preliminary insights into CuIOs degradation mechanisms, contributing to the development of more robust thermal management solutions. We expect that electroless plating of CuIOs with gold (Au), nickel (Ni), and atomic layer deposition of aluminum oxide in combination with appropriate application-specific coolants will further improve the reliability and lifetime of the CuIOs.

boiling-induced degradation↗
DOE OSTI2024

Pool Boiling Reliability Tests and Degradation Mechanisms of Microporous Copper Inverse Opal (CuIOs) Structures

The rising power density in electronic systems requires thermal management solutions that are both high-performing and reliable. Porous materials such as Copper Inverse Opal (CuIOs) have unique structural features, including high permeability and high thermal conductivity, to enhance pool boiling performance. However, there is little understanding of the degradation mechanism of such porous materials under pool boiling conditions. In this study, samples of 10 ..mu..m thick CuIOs with 4.8 ..mu..m diameter, covering silicon substrate of area 11 mm x 11 mm, with various heated areas ranging from 2.5 mm x 2.5 mm to 10 mm x 10 mm, were tested in 100 degrees C deionized water at a constant heat flux of 110 Wcm -2 for 3-to-7 days. The combined effect of erosion and corrosion caused structural degradation of the CuIOs. The directly heated area had the most severe degradation while the edge of the heater and the unheated area showed progressively less degradation, maintaining some CuIOs structure even after the 7-day reliability test. Among all the tested samples with various heater sizes, the 2.5 mm x 2.5 mm heater sample - in which the heater size was designed to be comparable to the water bubble characteristic length - had the largest critical heat flux (CHF) up to 300 Wcm -2 with a superheat ~ 13 degrees C. Additionally, CuIOs with a smaller heated area performed better in terms of reliability. This study offers preliminary insights into CuIOs degradation mechanisms, contributing to the development of more robust thermal management solutions. We expect that electroless plating of CuIOs with gold (Au), nickel (Ni), and atomic layer deposition (ALD) aluminum oxide (Al 2 O 3 ) in combination with appropriate application-specific coolants will further improve the reliability and lifetime of the CuIOs.

boiling-induced degradation↗
NASA NTRS1991

Microwave integrated circuits for space applications

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

Leonard, Regis F.↗
NASA NTRS2001

Superconducting Nb DHEB Mixer Arrays for Far-Infrared Spectroscopy

We are developing a heterodyne focal plane array with up to eight elements to study lines of the interstellar medium and planetary atmospheres with frequencies of 2 THz and above. Our fabrication process utilizes selective ion milling techniques to produce Nb Diffusion-Cooled Hot Electron Bolometric (DHEB) mixers from a bilayer thin film of Au/Nb deposited on a silicon substrate. A micro-bridge of 10 nm thick Nb forms the HEB device. The first generation of devices with lateral dimensions of 100 nm by 80 nm were fabricated at the feed of a broadband spiral antenna with a frequency response designed for up to 16 THz. Harmonic multiplier sources becoming available within the next few years should have sufficient power to provide a local-oscillator source for small-format, quasi-optically coupled arrays of these mixers. First generation devices measured at our laboratory have demonstrated a critical temperature (Tc) of 4.8 K with a 0.5 K transition width. These DHEB mixers are expected to have an optimum operational temperature of 1.8-2.0 K. The current four element array mixer block will ultimately be replaced by a dual polarization slot-ring array configuration with up to eight elements.

Gerecht, E.↗
NASA NTRS1988

Moisture interaction and stability of ZOT (Zinc Orthotitanate) thermal control spacecraft coating

Two of the many performance requirements of the zinc orthotitanate (ZOT) ceramic thermal control paint covering parts of the Jupiter-bound Galileo spacecraft are that it be sufficiently electrically conductive so as to prevent electrostatic discharge (ESD) damage to onboard electronics and that it adhere to and protect the substrate from corrosion in terrestrial environments. The bulk electrical resistivity of ZOT on an aluminum substrate was measured over the ranges 22 C to 90 C and 0 percent RH to 100 percent RH, and also in soft (10 (minus 2) Torr) and hard (10 (minus 7) Torr) vacuums. No significant temperature dependence was evident, but measured resistivity values ranged over 9 orders of magnitude: 10 to the 5th power ohm-cm at 100 percent RH greater than 10 to the 12th power ohm-cm in a hard vacuum. The latter value violates the ESD criterion for a typical 0.019 cm thick coating. The corrosion study involved exposing typical ZOT substrate combinations to two moisture environments - 30 C/85 percent RH and 85 C/85 percent RH - for 2000 hours, during which time the samples were periodically removed for front-to-back electrical resistance and scratch/peel test measurements. It was determined that the ZOT/Al and ZOT/Mg systems are stable (no ZOT delamination), although some corrosion (oxide formation) and resistivity increases observed among the ZOT/Mg samples warrant that exposure of some parts to humid environments be minimized.

Mon, Gordon R.↗
NASA NTRS1994

Summary of Workshop on InP: Status and Prospects

The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

Walters, R. J.↗
NASA NTRS2002

Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

Nanotechnology/instrumentation/methods↗
NASA NTRS2006

Nano Sensors for Gas Detection in Space and Ground Support Applications

Personnel living in a space environment as well as technicians and engineers preparing spacecraft for launch can potentially be exposed to small amounts of hazardous gases. It is therefore important to be able to detect, identify and quantify the presence of a gas especially when its presence could lead to a fatal situation. The use of small and sensitive sensors can allow for the placement of these devices over a large area, thus allowing for a more precise and timely determination of a gas leak. ASRC Aerospace and its research partners are developing nano sensors for detection of various gases, including but not limited to: H2, NH3, N2O4, hydrazine and others. Initial laboratory testing has demonstrated the capability to detect the gases in concentrations lower than parts per million. Testing and development is continuing to improve the response and recovery times, to increase the sensitivity of the devices. Different coatings and electrodes are currently being evaluated to determine the optimum configuration of a variety of gases. The small footprint of the Nano sensors allows for several devices, each responsive in a different way to different gases, to be placed into a single substrate. Multiple devices embedded into a single substrate results in increased reliability and in a decrease for periodic calibrations. The use of different coatings will result in a small electronic nose capable of distinguishing between different gases. A multi-channel signal conditioner amplifier built on a small multi chip module is used to process the output of the sensors and to deliver a signal that can be remotely monitored. All the data is digitized and transmitted over the same cable pair used to power the amplifier. Multiple outputs can be connected to a single cable pair in order to minimize the added weight and expense associated with cabling in a spacecraft. The sensors will be run through a qualification process to evaluate their suitability for space applications we are expecting to have fully functional sensors available for initial field deployment and testing by the end of the year 2006.

Medelius, Pedro J.↗
NASA NTRS1995

Advanced packaging for Integrated Micro-Instruments

The relationship between packaging, microelectronics, and micro-electrical-mechanical systems (MEMS) is an important one, particularly when the edges of performance boundaries are pressed, as in the case of miniaturized systems. Packaging is a sort of physical backbone that enables the maximum performance of these systems to be realized, and the penalties imposed by conventional packing approaches is particularly limiting for MEMS devices. As such, advanced packaging approaches, such as multi-chip modules (MCM's) have been touted as a true means of electronic 'enablement' for a variety of application domains. Realizing an optimum system of packaging, however, in not as simple as replacing a set of single chip packages with a substrate of interconnections. Research at Phillips Laboratory has turned up a number of integrating options in the two- and three-dimensional rending of miniature systems with physical interconnection structures with intrinsically high performance. Not only do these structures motivate the redesign of integrated circuits (IC's) for lower power, but they possess interesting features that provide a framework for the direct integration of MEMS devices. Cost remains a barrier to the application of MEMS devices, even in space systems. Several innovations are suggested that will result in lower cost and more rapid cycle time. First, the novelty of a 'constant floor plan' MCM which encapsulates a variety of commonly used components into a stockable, easily customized assembly is discussed. Next, the use of low-cost substrates is examined. The anticipated advent of ultra-high density interconnect (UHDI) is suggested as the limit argument of advanced packaging. Finally, the concept of a heterogeneous 3-D MCM system is outlined that allows for the combination of different compatible packaging approaches into a uniformly dense structure that could also include MEMS-based sensors.

Lyke, James L.↗
NASA NTRS1999

Ka-Band Beam Steering Reflectarray Study

A one-meter diameter, 32 GHz active microstrip reflectarray capable of electronic beam steering has been studied. The 15_500 element array consists of rnicrostrip patch antennas, microstrip phase shifters, and dc bias lines. Specifically, the study focused on the solid-state devices and dc bias layouts for scanning the beam linearly 45 from boresight using 2-bit phase shifters. Three configurations are recommended for the reflectarray with integrated 2-bit phase shifters where the total substrate and cladding mass varies from 8 kg to 14 kg. Additionally, dc power requirements for p-i-n diodes in 1-bit, 2-bit and 3-bit phase shifting circuits are approximately 19 W, 19 W, and 39 W, respectively. The dc power requirement for phase shifters using passive MESFETs is much less than 1 W.

McSpadden, James O.↗
DOE OSTI2026

Engineering Escherichia coli to produce medium chain oleochemicals from C 2 substrates

Many strategies to create a circular bioeconomy have been proposed. To be successful, CO 2 must be reduced with renewable energy into chemical building blocks, from which the chemical industry can be supported. Circular strategies include leveraging photosynthesis to produce sugar and lipid intermediates or renewable electricity to produce hydrogen or other electron carriers to support CO 2 reduction. Acetogens can anaerobically reduce CO 2 with H 2 to produce mixtures of small organic molecules in gas fermentations. We previously demonstrated that acetate, a common product of gas fermentation, can be converted to the model oleochemical dodecanol in engineered Escherichia coli. Here, we explored the conversion of ethanol and mixtures of ethanol and acetate to the same model oleochemicals. Co-feeding ethanol can supply both carbon and additional reducing power relative to acetate alone. In this work, we engineered E. coli to catabolize ethanol and expressed two distinct ethanol metabolism pathways in different operons and combined them with improved engineered acetate activation. We evaluated the performance of these operons in dodecanol-producing strains when fed ethanol or acetate and found ethanol to be a better carbon source when judged by product titers. The engineered strains fed ethanol produced about two-fold more dodecanol than the strains fed acetate. This increase was in part, due to change in product distribution. Cells fed ethanol produced predominantly dodecanol, whereas cells fed acetate generated a mixture of dodecanol and dodecanoic acid. Dodecanol titers were further improved by employing feeding strategies in controlled bioreactors.

Escherichia coli↗
DOE OSTI2025

Dielectric Barrier Discharge Electrothermal Heating and Additive Manufacturing of Thermoset Parts

Additive manufacturing of thermosets requires a mechanism for solidifying deposited layers in order to prevent part collapse. To accomplish this, non‐equilibrium plasma is proposed for its ability to target, heat, and cure printed thermosetting resin. Non‐equilibrium plasmas have not been used for the curing of liquid thermoset composites, and so their impact on an uncured resin is unknown. Here this work investigates the mechanism through which dielectric barrier discharge (DBD) heats an epoxy/carbon nanotube (CNT) composite under atmospheric conditions. Plasma applied to resin surfaces is found to cause rapid heating, with heating rate controlled by adjusting the applied power. Heating is localized to within the top 0.5 mm of the sample surface and maximum temperature is found to depend on sample conductivity, indicating the heating reaction occurs through a combination of electron conduction and ion bombardment. Characterization of composites cured using plasma shows oxidation and roughening of the surface. Based on the heating and surface studies, several demonstrative prints are performed using in situ plasma curing. This work shows the potential of DBD plasma to rapidly heat liquid substrates and demonstrates how plasma curing expands the capability of existing direct ink write (DIW) printer technologies.

3D printing↗
DOE OSTI2025

Overcoming Variability: A Reproducible Approach to SERS Detection of Nanodiamonds

Detonation nanodiamonds (DNDs) are formed at specific pressures and temperatures during explosions. Different explosives produce varied yields of DNDs within their detonation soot, with Composition B producing the highest yield. Raman spectroscopy (RS) is often used for the characterization of sp 2 - and sp 3 -hybridized carbon allotropes in carbonaceous materials because of distinct disorder and graphitic bands. Bulk diamond also gives a distinct Raman peak at 1332 cm –1 . Furthermore, as bulk diamond decreases in size to nanometer-sized species, the peak red-shifts and broadens, becoming increasingly difficult to detect with RS using visible excitations. Therefore, surface-enhanced Raman spectroscopy (SERS) was used to enhance the diamond peak of DNDs, enabling better detection and faster examination of DNDs within detonation soot. Previous literature of the SERS of DNDs delivered inconsistent results in spectral signatures and SERS substrates. Herein, refining of the methodology for the acquisition of SERS spectra of DNDs was achieved. Before any SERS experiments, the DNDs were first characterized with normal Raman (NR) and scanning electron microscopy. Two routes for SERS enhancement were evaluated: colloidal noble metal nanoparticles and evaporated silver films. Silver films produced the best signal enhancement of DNDs with the best signal-to-noise and peak enhancements observed at 20–30 nm thick silver films at 5% (∼300 μW) laser power. Consistent, reproducible SERS spectra were acquired of small aggregates of DNDs down to ∼500 nm. NR and SERS mapping analysis of DNDs before and after evaporation of silver films revealed the improvements in the detection capabilities of SERS compared with NR.

Carbon↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
NASA NTRS1996

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗
DOE OSTI2024

Spatially Precise Light‐Activated Dedoping in Wafer‐Scale MoS 2 Films

2D materials, particularly transition metal dichalcogenides (TMDCs), have shown great potential for microelectronics and optoelectronics. However, a major challenge in commercializing these materials is the inability to control their doping at a wafer scale with high spatial fidelity. Interface chemistry is used with the underlying substrate oxide and concomitant exposure to visible light in ambient conditions for photo-dedoping wafer scale MoS 2 . It is hypothesized that the oxide layer traps photoexcited holes, leaving behind long-lived electrons that become available for surface reactions with ambient air at sulfur vacancies (defect sites) resulting in dedoping. Additionally, high fidelity spatial control is showcased over the dedoping process, by laser writing, and fine control achieved over the degree of doping by modulating the illumination time and power density. This localized change in MoS 2 doping density is very stable (at least 7 days) and robust to processing conditions like high temperature and vacuum. The scalability and ease of implementation of this approach can address one of the major issues preventing the “Lab to Fab” transition of 2D materials and facilitate its seamless integration for commercial applications in multi-logic devices, inverters, and other optoelectronic devices.

14 SOLAR ENERGY↗
DOE OSTI2026

Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)

Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗