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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1967

Solvent permits solid curing agents to be used at room temperatures

Solvent system dissolves the solid curing agents used with polyurethane resins in adhesive systems. The system developed yields bond strengths comparable to 100 percent solid formulations. The optimum solvent chosen was a 55.5 percent solution in anhydrous tetrahydrofuran.

St. Cyr, M. C.↗
NASA NTRS1972

Stress relaxation of high strength A-286 bolts in simulated storage at room temperature

It was concluded that thermally activated relaxation of the type customarily encountered at high temperatures was not expected to occur at the low temperatures where long time NERVA storage conditions will prevail. Instances where relaxation occurred by a different mechanism at such moderate temperatures were also reported. Twelve simulated bolted flange test specimens were prepared. Parameters that were varied among the twelve specimens were the flange material, the bolt shank diameter, and the bolt loading in terms of percent of yield strength.

Sampson, R. C.↗
NASA NTRS1974

Tensile properties from room temperature to 1315 C of tungsten-lined tantalum-alloy (T-111) tubing fabricated by hot isostatic pressing

The effects were studied of a thin tungsten liner on the tensile properties of T-111 tubing considered for fuel cladding in a space power nuclear reactor concept. The results indicate that the metallurgically bonded liner had no appreciable effects on the properties of the T-111 tubing. A hot isostatic pressing method used to apply the liners is described along with a means for overcoming the possible embrittling effects of hydrogen contamination.

Buzzard, R. J.↗
NASA NTRS1975

Improved semi-conductor laser device, operating, at room temperature, with an array of three lasers in the spatially coherent, free running mode

The peak pulse power was increased by operating an array of three homostructure Ga As lasers in the laser device. A spatial filter in the laser device selects the spatially coherent, free running, mode. The optical peak power is 5 watts, which is three times the peak power of a single laser in the array. The far-field distribution of the three laser array is a single Gaussian beam of spatial coherence without sidelobes or grating lobes. The length of the optical pulses of spatial coherence was increased to 200 ns by improved heat transfer from the p-n junctions of the lasers to the metal housing of the pulse transformer, and by doubling the core area and increasing the turns of the primary windings of the pulse transformer. The mechanical stability of the laser device was improved and the transition from mechanical alignment to electro-mechanical alignment control, was facilitated.

Rutz, E. M.↗
NASA NTRS1977

Room-temperature-operation visible-emission semiconductor diode lasers

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported.

Ladany, I.↗