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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Electric field driven domain wall dynamics in BaTiO 3 nanoparticles

We report a detailed investigation into the response of single BaTiO 3 (BTO) nanocrystals under applied electric fields (E-field) using Bragg coherent diffraction imaging. Our study reveals pronounced domain wall migration and expansion of a sample measure under applied electric field. The changes are most prominent at the surface of the nanocrystal, where the lack of external strain allows greater domain wall mobility. The observed domain shifts are correlated to the strength and orientation of the applied E-field, following a side-by-side domain model from Suzana []. Notably, we identified a critical electric field strength of 3 MV/m, which leads to irreversible structural changes, suggesting plastic deformation. The findings highlight how surface effects and intrinsic defects contribute to the enhanced dielectric properties of BTO at the nanoscale, in contrast to bulk materials, where strain limits domain mobility. These findings deepen our understanding of nanoscale dielectric behavior and inform the design of advanced nanoelectronic devices. Published by the American Physical Society 2025

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Autonomous elemental characterization enabled by a low cost robotic platform built upon a generalized software architecture

Despite the rapidly growing applications of robots in industry, the use of robots to automate tasks in scientific laboratories is less prolific due to the lack of generalized methodologies and the high cost of hardware. This paper focuses on the automation of characterization tasks necessary for reducing cost while maintaining generalization and proposes a software architecture for building robotic systems in scientific laboratory environments. A dual-layer (Socket.IO and ROS) action server design is the basic building block, which facilitates the implementation of a web-based front end for user-friendly operation and the use of ROS Behavior Trees for convenient task planning and execution. A robotic platform for automating mineral and material sample characterization is built upon the architecture, with an open-source, low-cost three-axis computer numerical control gantry system serving as the main robot. A handheld laser induced breakdown spectroscopy (LIBS) analyzer is integrated with a 3D printed adapter, enabling (1) automated 2D chemical mapping and (2) autonomous sample measurement (with the support of an RGB-Depth camera). We demonstrate the utility of automated chemical mapping by scanning the surface of a spodumene-bearing pegmatite core sample with a 1071-point dense hyperspectral map acquired at a rate of 1520 bits per second. Furthermore, we showcase the autonomy of the platform in terms of perception, dynamic decision-making, and execution, through a case study of LIBS measurement of multiple mineral samples. The platform enables controlled and autonomous chemical quantification in the laboratory that complements field-based measurements acquired with the same handheld device, linking resource exploration and processing steps in the supply chain for lithium-based battery materials.

Cao, Xuan [Lawrence Berkeley National Laboratory (↗
DOE OSTI2025

Ferroelectrically switched valley-dependent transmission in SnTe-PbTe-SnTe monolayer lateral heterostructures

A special class of valleytronic two-dimensional (2D) semiconductors possesses carrier pockets (i.e., valleys) along certain directions in the first Brillouin zone, which can be applied as a new degree of freedom for information storage and processing. Here we show that members of this family that are ferroelectric allow the location of these valleys to be switched by rotating the ferroelectric polarization. This makes possible the control of electronic state transmission probability through an energy barrier by ferroelectrically switching the polarization direction, thereby creating or eliminating valley matching in reciprocal space. We apply molecular beam epitaxy to grow lateral sandwich heterostructures with monolayer-thick ferroelectric SnTe separated by nanometer-wide paraelectric PbTe as the barriers. Using scanning tunneling microscopy, we show that the transmission probability of the 2D hole states at the valence band maximum of SnTe monolayer strongly relies on the relative orientation between the polarization directions of the two SnTe electrodes. The transmission can be switched from a suppressed state to a permitted state by rotating the ferroelectric polarization of one SnTe electrode by 90 degrees. Our work demonstrates the electric-field-control of valley locations and its potential for tunnel junction valleytronic devices.

electronic devices↗
DOE OSTI2024

Emergence of two distinct phase transitions in monolayer CoSe2 on graphene

Abstract Dimensional modifications play a crucial role in various applications, especially in the context of device miniaturization, giving rise to novel quantum phenomena. The many-body dynamics induced by dimensional modifications, including electron-electron, electron-phonon, electron-magnon and electron-plasmon coupling, are known to significantly affect the atomic and electronic properties of the materials. By reducing the dimensionality of orthorhombic CoSe 2 and forming heterostructure with bilayer graphene using molecular beam epitaxy, we unveil the emergence of two types of phase transitions through angle-resolved photoemission spectroscopy and scanning tunneling microscopy measurements. We disclose that the 2 × 1 superstructure is associated with charge density wave induced by Fermi surface nesting, characterized by a transition temperature of 340 K. Additionally, another phase transition at temperature of 160 K based on temperature dependent gap evolution are observed with renormalized electronic structure induced by electron-boson coupling. These discoveries of the electronic and atomic modifications, influenced by electron-electron and electron-boson interactions, underscore that many-body physics play significant roles in understanding low-dimensional properties of non-van der Waals Co-chalcogenides and related heterostructures. Graphical Abstract

36 MATERIALS SCIENCE↗
DOE OSTI2025

MPEX AI Digital Twins

All magnetically confined plasma fusion power plant concepts (Tokamak, Spherical Tokamak, Stellarator, Mirror, ...) must exhaust the heat and plasma from the core confinement region to the material walls. The primary channel for this exhaust is through a plasma divertor which directs plasma along open magnetic field lines to a material target. The Material Plasma Exposure eXperiment (MPEX) illustrated in Figure 1, is a high-power, steady-state linear plasma device designed to produce the plasma material interaction (PMI) conditions of the divertor of future magnetic confinement fusion power plants: energy flux 20MW/m 2 , ion fluence 1031/m 2 , pulse duration 106 sec. These goals of plasma exposure in MPEX are well beyond those achieved in magnetic fusion experimental devices. Successfully achieving these high power steady state conditions for long pulses requires operational control of the heating and particle sources and the plasma flux to the walls and target. The MPEX AI Hot Spot Controller, proposed in this project, will help achieve the operational milestones of MPEX. The MPEX device will begin commissioning at the end of FY26. A smaller proto-MPEX was operated for 14,666 plasma discharges and will resume operation in September of 2025 as proto-MPEX-lite, with reduced capability, to test a new window for the Helicon plasma source. The proto-MPEX data has undergone surrogate modeling with machine learning methods (R. Archibald, 2022 IEEE International Conference on Big Data). This proto-MPEX data will be used to begin development of the AI digital twins described in this white paper. The scientific mission of MPEX is to qualify materials of different composition for use in the high energy and plasma flux conditions of a fusion power plant. The materials exposed in MPEX will in some cases be exposed to high neutron fluxes at other ORNL facilities to measure the changes to their PMI properties. The targets exposed in MPEX will be transported under vacuum to a Surface Analysis Station (SAS). The SAS will be equipped with the following diagnostics: Focused Ion Beam (FIB) for trench milling, 100-400 angstrom resolution scanning electron microscope (SEM), surface mapping x-ray spectrometer, high resolution camera, and a future upgrade to a laser induced breakdown spectroscopy quadruple mass spectrometer (LIBS-QMS). The MPEX experiments will generate diverse pre- and post-exposure measurement data of detailed material properties down to the crystal grain level in 3D for post-exposure assessment of PMI damage (e.g. cracking, melting, erosion and redeposition of the material). Physics models for the PMI, and how the material composition and manufacturing impact its performance under high energy plasma exposure, need to be validated with MPEX data to guide the selection of new candidate materials. Our vision for the MPEX AI Digital Twins project is to supply experimental and physics model simulation data to train Artificial Intelligence (AI) models for data processing, analysis, operational control, PMI and materials simulation to maximize the scientific output of the MPEX device. Ultimately, an AI digital twin of MPEX material assessment metrics for tested and synthetic material types with simulated PMI will be trained by the AI Modeling Teams on the experimental and physics simulation data submitted to the American Science Cloud by this project. A purely empirical search for the best material is inefficient given the finite number of samples that can be tested on MPEX. In order to expand the material properties database for training the MPEX Material Assessment AI Digital Twin, and to gain physics understanding of the PMI processes, physics models of the material properties and PMI processes are required. The physics simulations provide detailed simulation data, like impact angles for plasma ions, sputtering yields, transport of the ionized sputtered target material in the plasma, and redeposition locations. This simulation data expands the measurement data for deeper physics understanding. The experimental data is essential to validate the PMI and material structure simulation models. The validated models can then be used to generate new simulation data of MPEX material assessments for synthetic material compositions that have not been exposed in MPEX. These predictive simulations, plus the whole experimental dataset, will be used to train the MPEX Material Assessment AI Digital Twin allowing a rapid generative AI search for new materials with reduced PMI damage by interpolating the domain of the training set. These new optimum materials can be simulated with the physics codes and/or tested in MPEX. The ability of AI neural networks to interpolate multi-dimensional parameter spaces and generate virtual data is exploited for a more efficient search for optimum materials. The advent of the Transformational AI Models Consortium (TAIMC) is an opportunity to engage with state of the art private and public AI developers to achieve the goals of the AI digital twins and AI accelerated physics models proposed in this project. Our partners at ORNL from the Advance Scientific Computing Research (ASCR) organization will collaborate in accelerating the integrated plasma material interaction simulation framework. This simulation framework will provide a platform for generating simulation data across a range of physical fidelities, including hybrid methods that produce multi-fidelity results. This data will be leveraged for AI model development, both for generation of surrogates and the automation of simulation campaigns. A part of the research below will include collaborative efforts with the TAIMC to (i) adapt data storage approaches to ensure AI-readiness, (ii) provide a protypical exemplar to inform and exercise constructed workflows, and (iii) generate and share data, using the TAIMC unified AI data standard, for foundational models that will be trained from multiple sources across the DOE complex. We will also collaborate with the TAIMC, as well as the planned AI modeling teams, to develop approaches for reducing the cost of data generation. These include tailored multi-fidelity approaches as well as fine-tuning strategies to augment general, large-scale foundational models.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Laser-induced quenching of metastability at the Mott insulator to metal transition

There is growing interest in strongly correlated insulator thin films because the intricate interplay of their intrinsic and extrinsic state variables causes memristive behavior that might be used for biomimetic devices in the emerging field of neuromorphic computing. Here, in this study, we find that laser irradiation tends to drive V 2 ⁢O 3 from supercooled/superheated metastable states toward thermodynamic equilibrium, most likely in a nonthermal way. We study thin films of the prototypical Mott-insulator V2⁢O3, which show spontaneous phase separation into metal-insulator herringbone domains during the Mott transition. Here, we use low-temperature microscopy to investigate how these metal-insulator domains can be modified by scanning a focused laser beam across the thin film surface. We find that the response depends on the thermal history: When the thin film is heated from below the Mott transition temperature, the laser beam predominantly induces metallic domains. On the contrary, when the thin film is cooled from a temperature above the transition, the laser beam predominantly induces insulating domains. Very likely, the V 2 ⁢O 3 thin film is in a superheated or supercooled state, respectively, during the first-order phase transition, and the perturbation by a laser beam drives these metastable states into stable ones. This way, the thermal history is locally erased. Our findings are supported by a phenomenological model with a laser-induced lowering of the energy barrier between the metastable and equilibrium states.

Materials Science↗
DOE OSTI2026

Carbon-Based Quantum Information Science with Symmetry Protected Topological States (Final Report, DOE-BES award DE-SC0023105)

This research program established the scientific foundation for the rational, bottom-up design, synthesis, isolation, and investigation of symmetry-protected topological (SPT) electron spin qubits embedded in graphene nanoribbons (GNRs). The work focused on integrating atomically precise low-dimensional carbon nanostructures with emerging quantum logic architectures, providing a pathway toward scalable quantum materials for next-generation computing and sensing technologies. A central component of the program was the elucidation of fundamental relationships between real-space molecular architecture, local spin density distributions, electronic band dispersion, and energy level alignment in atomically precise GNR systems. These correlations define key operational parameters of SPT qubits and were systematically investigated to establish quantitative benchmarks against established molecular and solid-state spin qubit platforms. Attention was given to properties critical for quantum device performance, e.g. decoherence times, spectral sharpness of energy transitions, and tunable exchange interactions between spin states. The research demonstrated that these parameters can be engineered with atomic precision through scalable bottom-up synthetic strategies. Theory-guided design played a central role in identifying candidate structures hosting topologically protected spin states. Experimental validation was performed using both ensemble measurements and single-molecule characterization. In addition to advances in quantum materials synthesis, the program developed and applied spin-sensitive scanning probe microscopy techniques capable of directly probing quantum states and dynamic processes with atomic-scale spatial resolution. These capabilities enabled direct observation and characterization of quantum structures at the single-atom level. While the research activities were primarily hypothesis-driven fundamental investigations, the program adopted a comprehensive materials-by-design framework aimed at translating scientific discoveries into technological concepts compatible with scalable and intelligent manufacturing approaches.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Comparative S/TEM study of superconducting Ta quantum resonators by wet and dry etching types

Superconducting resonators play a pivotal role in various quantum technology applications, such as quantum computing and high-frequency communication systems. The performance of these resonators is closely tied to the properties of the superconducting films used in their fabrication. Here, in this study, we investigated the impact of wet and dry etching on tantalum (Ta) films leveraging advanced scanning transmission electron microscopy-based characterization methods and examined the morphological, chemical, and strain changes caused by the etching processes. Consequently, we report the significant differences between the two etching methods, with dry etching resulting in straight slanted sidewalls and a thinner oxidized layer, while wet etching produced curved sidewalls and undercuts. Both methods led to the formation of a residual Ta wedge at the lower part of the sidewall, causing lattice deformation, which could adversely influence the homogeneous operations of superconducting devices. These insights enhance our understanding of how etching influences superconducting films, offering valuable guidance for optimizing resonators and related devices. Our findings mark a significant stride in advancing quantum technologies and high-frequency communication by enhancing our practical understanding of superconducting material fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Use of differential plasma rotation to prevent disruptive tearing mode onset from 3-wave coupling

Abstract Plasma differential rotation is found to be capable of preventing disruptive neoclassical tearing modes (NTMs) seeded by nonlinear three-wave coupling. As tearing modes degrade confinement and can lead to disruptions, stabilization strategies are crucial to the successful operation of future devices. In ITER-relevant scenarios on DIII-D, rotationally coupled m / n = 1/1 and 3/2 modes have been observed to drive 2/1 islands through three-wave coupling. The frequency of the driven 2/1 mode is set by matching conditions and the frequencies of the driving modes. When the driven mode frequency matches the local plasma rotation frequency, e.g. at low differential rotation, the driven 2/1 island can grow into a disruptive NTM. Using neutral beam torque as an actuator to scan the differential rotation, these experiments demonstrate that a sufficiently large frequency mismatch prevents destabilization of disruptive 2/1 NTMs by three-wave coupling. This work indicates that differential rotation can be used as an actuator to prevent NTMs seeded by three-wave coupling.

Richner, N. J. (ORCID:0000000155443915)↗
DOE OSTI2025

Probing the Effects of the First Atomic Layer on the Dynamic Behavior of Sub-2 nm MgO/Al 2 O 3 Memristors

As electronic devices continue to scale down from the current sub-5 nm range, atomic-scale control of defects becomes increasingly crucial to suppressing their impact on the physical properties of the devices. Memristors present an excellent example as a nonlinear and dynamic device with high speed and endurance required for electronic applications ranging from neuromorphic computing to nonvolatile memories. Herein we investigate the impact of atomic defects in sub-2 nm thick MgO/Al 2 O 3 atomic layer stack (ALS) memristors that use an M1 (switching layer)/M2 (oxygen vacancy reservoir layer) bilayer structure grown using in vacuo atomic layer deposition (iALD). Intriguingly, we revealed a direct correlation of the atomic defects in the M2 layer with the memristor dynamic behavior using a combined analysis of in situ scanning tunneling spectroscopy (iSTS) on the M2 layer and ex situ characterization on the memristors. Specifically, incomplete coverage of the 1st ALD atomic layer of M2 on the electrode yields defects at the M2/electrode interface. Despite the monotonic increase of ALD coverage, by almost three-fold from ~30% to >90%, at completion of the M2 layer of ~ 0.7 nm in thickness, the impact of the defects on the M2/electrode interface has been found detrimental to both memristor switching speed and endurance. Guided by atomistic simulation, we addressed the issue of interface defects via tuning of the Al surface hydroxylation to increase the first atomic layer ALD coverage to ~75%, leading to improved memristor switching speed and endurance by several orders of magnitude. In conclusion, these findings shed light on the correlation between the atomic defects and the dynamic behavior of sub-2 nm memristors and the importance of minimizing the atomic defects in memristors for future electronic applications.

Atomic Layer Deposition↗
DOE OSTI2026

Chemical and Radiological Compatibility Testing of 3D Printed Materials

To dramatically increase the adaptability, performance, and safety of processes in support of the Defense Waste Processing Facility (DWPF), Savannah River National Lab (SRNL) plans to perform chemical and radiological compatibility testing on a wide variety of 3D printed materials of interest. The 3D printing process provides numerous strategic operational benefits such as rapid prototyping of complex designs and geometry specific to the needs of the nuclear waste disposition process, as well as on-demand rapid prototyping and iteration with materials that aren’t as accessible through traditional manufacturing methods. Reaction chemistry in simulated waste batches can be matched closely to its radioactive counterpart, but glass reactor vessels have limitations. Vessel geometry can play a big factor in mixing transport limitations, process chemistry, and degradation reaction kinetics. In addition, additive manufacturing allows for much more detailed vessel design than traditional alternatives. Waste processing techniques in DWPF also encounter extreme chemical environments including high pH, strong acids, abrasive slurries, and significant irradiation. To meet these challenges, a matrix of various polymer, ceramic, and metal additive manufacturing materials have been exposed to a suite of chemical environments of interest as well as radioactive dose (such as gamma radiation from 60 Co) to properly test their durability under these conditions. Mass change has been monitored over a period of up to a week in these conditions, as well as added characterization for surface modification through Scanning Electron Microscopy/Electron Dispersive X-ray analysis (SEM/EDX). Further chemical characterization has been monitored through Fourier-Transform InfraRed Spectroscopy (FTIR), with planned investigation via thermal and tensile strength degradation. While the direct product of this research is identification of material(s) that can withstand specific hazardous environments encountered by the mercury water wash tank in DWPF process simulation experiments, the reference base of materials will be used for many other nuclear processes in the pursuit of rapidly developed, cost-efficient, and highly specific devices for environmental remediation and much more.

Wilson, Nathan W. [Savannah River National Laborat↗
DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Novel white light-emitting CdSe:Mn 2+ synthesized by photo-assisted chemical bath deposition

Nowadays, white light-emitting materials have attracted extensive research due to their potential applications in lighting devices and displaying images. Several semiconductor nanoparticles have been explored to achieve efficient white light emission. In this work, we report on novel white light-emitting CdSe:Mn 2+ thin films synthesized by photo-assisted chemical bath deposition. The effect of varying the Mn 2+ ion concentrations on the thin film structure, morphology, and optical properties was investigated. X-ray powder diffraction results indicated that all the films annealed at 250 degrees C possessed a cubic structure, with crystallite sizes in the range of 1-130 nm. Scanning electron microscopy demonstrated spherical nanoparticles with no significant changes with varying Mn 2+ doping concentrations. Energy dispersive X-ray spectroscopy confirmed the presence of the anticipated elements. The atomic force microscope revealed that the surface roughness has decreased with an increase in Mn 2+ ion concentrations but decreased for 0.7 %Mn 2+ . The UV-Vis absorption spectra showed absorption edges around 600-650 nm. Photoluminescence emission spectra excited at 3.8 eV (325 nm) showed emission bands at around 1.75 eV (709 nm), and 1.88 eV (659 nm), which were attributed to the band-to-band emission, and 4 T 1 ( 4 G)-> 6 A 1 ( 6 S) transitions of Mn 2+ ions, respectively, while emission bands at 2.35 eV (528 nm), and prominent at 3.17 eV (391 nm) were due to the glass substrate. The temperature-dependent luminescence showed a decrease in relative emission intensity with the increase in the operating temperature. The chromaticity colour coordinates showed white light-emitting thin films. These present findings open a new door to developing white light using CdSe thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Performance measurement of emerging 3- and 4-terminal tandem solar cells

Tandem solar cells are not limited to the conventional two-terminal (2-T) configuration. Multi-terminal designs like three-terminal (3-T) and four-terminal (4-T) devices have gained increasing attention in the PV community due to their relaxed current-matching requirement between subcells and their potential for enhanced energy yield. However, reliable and standardized methods for evaluating the performance of multi-terminal tandems remain underdeveloped. This work addresses this gap by providing comprehensive measurement guidelines tailored to these advanced configurations. We examine key coupling mechanisms between subcells, including the shared electrical load in 3-T devices and optical luminescent coupling in both 3-T and 4-T devices, to enable accurate and consistent performance evaluation. Furthermore, we propose two stabilized measurement methods for emerging 3-T tandem cells incorporating perovskite subcells: (1) a two-dimensional maximum-power-point tracking (MPPT) approach that continuously tracks both subcells' maximum power points (P MAX ) until convergence to stabilized outputs, and (2) a hybrid approach that combines MPPT for one subcell with stabilized current recording under fixed voltage biases near the P MAX of the other, allowing robust extraction of the overall stabilized P MAX (termed “MPPT + asymptotic P MA X scan” method). These methods directly address the dynamic current responses inherent to perovskite-containing tandems, providing a foundation for meaningful and reproducible performance comparisons.

14 SOLAR ENERGY↗
DOE OSTI2025

Spectra-Orthogonal Optical Anisotropy in Wafer-Scale Molecular Crystal Monolayers

Controlling the spectral and polarization response of two-dimensional (2D) crystals is vital for developing ultrathin platforms for compact optoelectronic devices. However, independently tuning optical anisotropy and spectral response remains challenging in conventional semiconductors due to the intertwined nature of their lattice and electronic structures. Here, we report spectra-orthogonal optical anisotropy─where polarization anisotropy is tuned independently of spectral response─in wafer-scale, one-atom-thick 2D molecular crystal (2DMC) monolayers synthesized on monolayer transition-metal dichalcogenide (TMD) crystals. Utilizing the concomitant spectral consistency and structural tunability of perylene derivatives, we demonstrate tunable optical polarization anisotropy in 2DMCs with similar spectral profiles, as confirmed by room-temperature scanning tunneling microscopy and cross-polarized reflectance microscopy. Additional angle-dependent analysis of the single-crystal and polycrystalline molecular domains reveals an epitaxial relationship between the 2DMC and TMD. In conclusion, our results establish a scalable, molecule-based 2D crystalline platform for unique and tunable functionalities unattainable in covalent 2D solids.

2D materials↗
DOE OSTI2026

Confined Room-Temperature Ferromagnetism in Kagome (Fe 3 Sn 2 /CoSn) Superlattices

We reveal the presence of robust ferromagnetism in topological kagome (Fe 3 Sn 2 /CoSn) ×n superlattices via polarized neutron reflectivity (PNR) and magnetization measurements. Using molecular beam epitaxy, we have synthesized superlattices of alternating ferromagnetic Fe 3 Sn 2 and paramagnetic CoSn layers, the interfacial integrity of which is confirmed using scanning transmission electron microscopy. Magnetization depth profiles, obtained by fitting the PNR data, confirm the presence of ferromagnetism in the confined Fe 3 Sn 2 layers at room temperature, with minimal thickness dependence down to 2 nm. A net magnetization is found in the near-surface region of CoSn, which we attribute to surface oxidation. Our results demonstrate that superlattice engineering is a means to confine ferromagnetism in kagome metals, enabling future studies of thickness-dependent anomalous Hall and Nernst effects as well as spin-dependent transport and tunneling in device structures.

kagome metals↗
DOE OSTI2025

Stacking polymorphism of PtSe 2 : its implication to layer-dependent metal-insulator transitions

Using diffusion Monte Carlo (DMC) and density functional theory (DFT) calculations, we examine the structural stability and interlayer binding properties of PtSe 2 . Our DMC study reveals that AA and AB-r bilayer stacking modes are nearly degenerate, highlighting the significant role of interlayer hybridization in offsetting the energy cost due to larger interlayer separations in the AB-r mode. Additionally, our DMC-benchmarked DFT calculations with the r 2 SCAN+rVV10 functional uncover pronounced stacking polymorphism in few-layer PtSe 2 , driven by degenerate AA and AB-r interfaces, which leads to substantial band gap variations across different stacking configurations. This polymorphism, along with selenium vacancies, influences a layer-dependent metal-insulator transition observed in few-layer PtSe 2 . Our findings emphasize the importance of both van der Waals interactions and interlayer hybridization in determining the phase stability and electronic properties of PtSe 2 , advancing our understanding of its fundamental properties and refining theoretical models for practical applications in nanoelectronic devices.

Electronic materials↗
DOE OSTI2024

Real-space visualization of a defect-mediated charge density wave transition

Here, we study the coupled charge density wave (CDW) and insulator-to-metal transitions in the 2D quantum material 1T-TaS 2 . By applying in situ cryogenic 4D scanning transmission electron microscopy with in situ electrical resistance measurements, we directly visualize the CDW transition and establish that the transition is mediated by basal dislocations (stacking solitons). We find that dislocations can both nucleate and pin the transition and locally alter the transition temperature T c by nearly ~75 K. This finding was enabled by the application of unsupervised machine learning to cluster five-dimensional, terabyte scale datasets, which demonstrate a one-to-one correlation between resistance—a global property—and local CDW domain-dislocation dynamics, thereby linking the material microstructure to device properties. This work represents a major step toward defect-engineering of quantum materials, which will become increasingly important as we aim to utilize such materials in real devices.

4D-STEM↗