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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Effects of evaporation rate and oxygen pressure on characteristics of silicon oxide films, and angular reflectance of metals determined by optical constants
Shock contraction of silicon oxide powders in converging cylindrical wave, and effects of compression
Analyzing the remains of Space Shuttle Columbia has proven technically beneficial years after the vehicle breakup. This investigation focused on charred deposits on fragments of Columbia overhead windowpanes. Results were unexpected relative to the engineering understanding of material performance in a reentry environment. The TEM analysis demonstrated that the oxides of aluminum and titanium mixed with silicon oxides to preserve a history of thermal conditions to which portions of the vehicle were exposed. The presence of Ti during the beginning of the deposition process, along with the thermodynamic phase precipitation upon cool down, indicate that temperatures well above the Ti melt point were experienced. The stratified observations implied that additional exothermic reaction, expectedly metal combustion of a Ti structure, had to be present for oxide formation. Results are significant for aerospace vehicles where thermal protection system (TPS) breaches cause substructures to be in direct path with the reentry plasma. 1
Analyzing laser-produced plasmas in a controlled oxygen-containing environment provides insight into the formation and evolution of molecular species through gas-phase oxidation. This study explores the role of ambient pressure and oxygen availability in forming SiO molecular species in laser ablation plumes. The self-emission emanating during the reactive ablation of Si targets was characterized by optical emission spectroscopy and optical time-of-flight techniques. Our results showed that the SiO species formation was greatly influenced by both the ambient pressure and oxygen availability. The intensity and the persistence of SiO emission bands are lower at higher oxygen concentrations, indicating they are depopulated by the formation of more complex silicon oxides. The oxygen partial pressure effects on plume chemistry showed that SiO formation is favored even with a minimal oxygen concentration in the environment.
There is little literature characterizing the temperature-dependent thermo-optic coefficient (TOC) for low pressure chemical vapor deposition (LPCVD) silicon nitride or plasma enhanced chemical vapor deposition (PECVD) silicon dioxide at temperatures above 300 K. In this study, we characterize these material TOC’s from approximately 300-460 K, yielding values of (2.51 ± 0.08) · 10 −5 K −1 for silicon nitride and (5.67 ± 0.53) · 10 −6 K −1 for silicon oxide at room temperature (300 K). We use a simplified experimental setup and apply an analytical technique to account for thermal expansion during the extraction process. We also show that the waveguide geometry and method used to determine the resonant wavelength have a substantial impact on the precision of our results, a fact which can be used to improve the precision of numerous ring resonator index sensing experiments.
Silicon oxides (SiO x ) have been considered as promising alternatives to pure Si in high energy anodes in lithium-ion batteries (LIBs) due to their improved cycling stability. However, their fundamental lithiation mechanism has not yet been systematically investigated, and potential collateral downsides remain unclear. In this work, we report on the role of oxygen in lithiation/delithiation and solid electrolyte interphase (SEI) formation processes in SiO x thin film model electrodes with different oxygen contents. Here, we show that the SiO x anodes with higher oxygen content experience smaller volume change and form a thinner and more stable SEI, both of which are beneficial for cycling stability. However, these SiO x anodes also show an irreversible lithiation at around 0.7 V attributed to the reduction of Si oxides, leading to lower first cycle coulombic efficiency that is undesirable for practical applications. Overall, these results offer a balanced perspective on the advantages and disadvantages that oxygen brings to Si-based anodes in LIBs.
In January 1998 during, the STS-89 mission, an eight section Russian solar array panel was retrieved after more than ten years exposure to the orbital space environment on the Russian space station Mir. Two darkened handrail samples from the Russian solar array have been evaluated for contamination: a section of a white paint covered rigid handrail and a section of woven fabric over-wrapped around a flexible handhold. The handrail samples were evaluated using optical microscopy (OM), field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS). Optical properties were also obtained. Microscopy has shown the discolored areas to have thick layers of contaminant that has crazed and spalled off in regions. Energy dispersive spectroscopy revealed that the brown contaminant is composed of oxidized silicon. No silicon was present on the unexposed fabric over-wrap, and very small amounts were present in the white paint. Therefore, the contaminant layer on both samples is attributed to silicone contamination from other spacecraft materials that have been oxidized by atomic oxygen while in orbit. A significant source of the silicone contamination appears to be from the solar array itself.
Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. In conclusion, these results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.
Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transistors
Manganese and silicon effects on oxidation and scale mechanisms of Co-Cr alloys, using thermogravimetric, metallographic and microprobe techniques
SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.
Deal and Grove’s formulation is applied to model the oxidation of the silicon bond coat in environmental barrier coatings. The approach is similar to the author’s previous study, except now the oxidant is assumed to flow through the coating as oxygen ions via vacancies on the oxygen sublattice. The use of an “effective permeability” of the oxidant in the coating is required under the vacancy diffusion assumption. It is found that the linear-parabolic growth equation from Deal and Grove, , is still applicable for the oxidation of the silicon bond coat, but the equation for the parameter A must be modified to account for the coating. The expression for B is the same as that obtained by Deal and Grove and thus is unaffected by the presence of a coating. The modified expression for A is a linear function of the coating thickness and includes the ratio of the oxidant permeability in the oxide to its effective permeability in the coating.
Fabrication and testing of large area metal oxide silicon capacitors for micrometeoroid counting in space
The electron-beam technique for evaporating a dielectric material onto solar cells is investigated. A process has been developed which will provide a highly transparent, low stress, 2 mil thick cover capable of withstanding conventional space type qualification tests including humidity, thermal shock, and thermal cycling. The covers have demonstrated the ability to withstand 10 to the 15th power 1 MeV electrons and UV irradiation with minor darkening. Investigation of the cell AR coating has produced a space qualifiable titanium oxide coating which will give an additional 6% current output over similar silicon oxide coated cells when covered by glass.
Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.
A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate.
A protective tin oxide layer formed by atomic-layer deposition limits surface recombination at n-Si surfaces and produces ∼620 mV of photovoltage on planar n-Si photoanodes. The layer conformally coats structures such as Si microcone arrays.