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At least 145 records · Page 8

Silicon Micromachined Sensor for Broadband Vibration Analysis

The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

Gutierrez, Adolfo↗

The SMART Ground-based Remote Sensing for Terra/MODIS Validation

A ground-based remote sensing system - SMART (Surface Measurements for Atmospheric Radiative Transfer) - was deployed during both the SAFARI-2000 and the ARREX-1999 dry season campaigns. The measurement site is the Skukuza airport. The operation period for 1999 is from August 16 to September 10. The main instruments include shortwave (approximately 0.28-2.8 micrometers) and longwave (approximately 4-50 micrometers) broadband radiometers, a shadow-band radiometer, a micro-pulse lidar, and a microwave radiometer. We also did some measurements of solar spectral flux by using an ASD spectrometer. The operation period for 2000 is from August 15 to September 22. This time we added a few new features to the SMART system: a solar tracker for direct and diffuse components of solar fluxes; the scanning capability to the microwave radiometer; a whole sky camera for documenting the sky conditions every minute; and a mini-weather station for atmospheric pressure, temperature, humidity, wind speed/direction. A surface SSFR (Solar Spectral Flux Radiometer) from NASA Ames also joined us for the measurements. This is a unique data set with reasonably long observational period and high accuracy. The data show good correlation with the local weather patterns. We also see diurnal change and some special events, such as fierce fires nearby. To quantify the surface radiative forcing of biomass burning aerosols, many pyranometers, pyrgeometers, and pyrheliometers measure the global, direct, and diffuse irradiance at the surface. These fluxes combining with the collocated optical thickness retrievals from sun photometer (or shadow-band radiometer), the solar radiative forcing, proportional to delta F/delta tau, can be investigated. Integrated with measurements of other instruments at the site, these data sets will serve as "ground truth" for the satellite measurements and modeling.

Tsay, Si-Chee↗

Effects of CMAS Application on the Isothermal and Gradient Thermal Cycling Behavior of a Yb 2 Si 2 O 7 EBC

Environmental barrier coatings (EBCs) are critical to the continued advancement of gas turbine hot section materials technology. EBCs are required to protect Si-based ceramics such as silicon carbide fiber-reinforced silicon carbide (SiC/SiC) ceramic matrix composites (CMCs) from oxidation and corrosion in the combustion environment. One of the current challenges concerning EBC lifetime is the thermochemical reactions between calcium-magnesium-aluminosilicate (CMAS) deposits and the EBC that leads to changes in both composition and stress state. These changes can severely reduce the integrity of the EBC leading to crack formation, delamination, and spallation. Current techniques for evaluating CMAS in the laboratory rely on the pre-application of CMAS. Two commonly used application methods to deposit CMAS on EBC materials are tape-casting and air spray. In both methods, the CMAS is applied to the EBC surface at ambient temperature, and then subject to a heat treatment process for binder burnout. The purpose of this study is to compare the tape-cast and air spray methods on the CMAS corrosion of an ytterbium disilicate (Yb 2 Si 2 O 7 ) EBC subject to isothermal, and gradient thermal cycling. The results highlight if any differences exist in the CMAS infiltration kinetics between the two application methods.

Environmental barrier coatings (EBCs)↗

Si(Li) position sensitive detector

A position sensitive detector was made using the lithium diffused layer of a lithium-drifted-silicon detector as the uniform resistive layer. An expression is derived for estimating the resistance from the thickness of the lithium layer. Expressions for the noise and ballistic deficit for single differentiation-double integration pulse shaping are presented. Room temperature data for a 1 Mev proton beam on a 45 mm long detector shows that the linearity is better than .05% and that the position resolution is 1.06 + or - .05 mm.

Gigante, J. R.↗

MCNP Simulations of Measurement of Insulation Compaction in the Cryogenic Rocket Fuel Tanks at Kennedy Space Center by Fast/Thermal Neutron Techniques

MCNP simulations have been run to evaluate the feasibility of using a combination of fast and thermal neutrons as a nondestructive method to measure of the compaction of the perlite insulation in the liquid hydrogen and oxygen cryogenic storage tanks at John F. Kennedy Space Center (KSC). Perlite is a feldspathic volcanic rock made up of the major elements Si, AI, Na, K and 0 along with some water. When heated it expands from four to twenty times its original volume which makes it very useful for thermal insulation. The cryogenic tanks at Kennedy Space Center are spherical with outer diameters of 69-70 feet and lined with a layer of expanded perlite with thicknesses on the order of 120 cm. There is evidence that some of the perlite has compacted over time since the tanks were built 1965, affecting the thermal properties and possibly also the structural integrity of the tanks. With commercially available portable neutron generators it is possible to produce simultaneously fluxes of neutrons in two energy ranges: fast (14 Me V) and thermal (25 me V). The two energy ranges produce complementary information. Fast neutrons produce gamma rays by inelastic scattering, which is sensitive to Fe and O. Thermal neutrons produce gamma rays by prompt gamma neutron activation (PGNA) and this is sensitive to Si, Al, Na, K and H. The compaction of the perlite can be measured by the change in gamma ray signal strength which is proportional to the atomic number densities of the constituent elements. The MCNP simulations were made to determine the magnitude of this change. The tank wall was approximated by a I-dimensional slab geometry with an 11/16" outer carbon steel wall, an inner stainless wall and 120 cm thick perlite zone. Runs were made for cases with expanded perlite, compacted perlite or with various void fractions. Runs were also made to simulate the effect of adding a moderator. Tallies were made for decay-time analysis from t=0 to 10 ms; total detected gamma-rays; detected gamma-rays from thermal neutron reactions d. detected gamma-rays from non-thermal neutron reactions and total detected gamma-rays as a function of depth into the annulus volume. These indicated a number of possible independent metrics of perlite compaction. For example the count rate for perlite elements increased from 3600 to 8500 cps for an increase in perlite density from 6 lbs/lcf to 16.5 lbs/cf. Thus the MCNP simulations have confirmed the feasibility of using neutron methods to map the compaction of perlite in the walls of the cryogenic tanks.

Livingston, R. A.↗

Heavy-lift vehicle-launched Space Station method and apparatus

Methods and apparatus are provided for a single heavylift launch to place a complete, operational space station on-orbit. A payload including the space station takes the place of a Shuttle Orbiter using the launch vehicle of the Shuttle Orbiter. The payload includes a forward shroud, a core module, a propulsion module, and a transition module between the core module and the propulsion module. The essential subsystems are pre-integrated and verified on Earth. The core module provides means for attaching international modules with minimum impact to the overall design. The space station includes six control moment gyros for selectably operating in either LVLH (local-vertical local-horizontal) or SI (solar inertial) flight modes.

Wade, Donald C.↗

Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

Raupp, Gregory B.↗

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗

Development and evaluation of integrated infrared arrays for astronomical applications

The status of a technology program to evaluate existing infrared detector arrays, and to develop improved ones for low background astronomical applications, is described. For applications such as the Shuttle Infrared Telescope Facility, arrays that cover as much of the 1-1000 micron range as possible are of interest. Low background test results for a 2 x 64 Si:Bi charge-injection-device, and 1 x 20 InSb charge-coupled-device arrays, are included. As a result of the present testing, improved, astronomy-optimized extrinsic silicon arrays in both linear and area formats are planned. Efforts to develop accumulation mode MOSFETs specifically for liquid helium temperatures, and cryogenic amplifier and multiplexer circuits, are discussed.

Mccreight, C. R.↗

High-Power AlGaAs Quantum-Well Lasers On Si Substrates

AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.

Kim, Jae-Hoon↗

Science Instruments for the Advanced X-Ray Astrophysics Facility (AXAF)

The AXAF program has undergone major changes since the Announcement of Opportunity was extended by NASA Headquarters in 1983. The Science Instruments (SI's) for AXAF have also experienced several design changes since they were competitively selected in 1985. Moreover, two separate complementary missions are now being baselined for AXAF; one is designated AXAF-I for imaging and will include the high precision Wolter type I optics, and the other is called AXAF-S for spectroscopy. The resulting less-costly AXAF will still be superior to any previous x-ray observatories. Both missions continue to be managed. AXAF-I contains two focal plane SI's, the High Resolution Camera (HRC), and the AXAF Charge-Coupled Device (CCD) imaging spectrometer (ACIS), as well as the High-Energy Transmission Grating Spectrometer (HETGS) and the Low-Energy Transmission Grating Spectrometer (LETGS). Optics/Cryogenics Division (BECD). AXAF-S features only one focal plane SI, the X-Ray Spectrometer (XRS). The grazing incidence mirrors for this mission are mainly to provide a large collecting area and to concentrate these x-ray photons onto the XRS detector. Precise focusing, although preferred, is of secondary importance. Nested conical foil mirrors are currently baselined; however, replicated imaging optics are being evaluated for collecting efficiency and cost. AXAF-S is scheduled to be launched in late 1999. It has been designated as an MSFC in-house project. In addition to overall management, MSFC is fully responsible for the design, development, integration, and test of the complete AXAF-S observatory, including the XRS which will be furnished by the Goddard Space Flight Center (GSFC). Together, AXAF-I and AXAF-S constitute the third of NASA's series of Great Observatories, joining the Hubble space telescope (HST) and the Gamma-Ray Observatory (GRO) which are already operational. The develop- ment, launch, and operation of the Space InfraRed Telescope Facility (SIRTF) will follow later to complete the Great Observatory series. This paper summarizes the impact these changes have had on the SI's.

Carl E Winkler↗

Pioneer Venus Sounder Probe Solar Flux Radiometer

The Solar Flux Radiometer aboard the Pioneer Venus Sounder Probe operated successfully during its descent through the atmosphere of Venus. The instrument measured atmospheric radiance over the spectral range from 400 to 1800 nm as a function of altitude. Elevation and azimuthal measurements on the radiation field were made with five optical channels. Twelve filtered Si and Ge photovoltaic detectors were maintained near 30 C with a phase-change material. The detector output currents were processed with logarithmic transimpedance converters and digitized with an 11-bit A/D converter. Atmospheric sampling in both elevation and azimuth was done according to a Gaussian integration scheme. The serial output data averaged 20 bits/sec, including housekeeping (sync, spin period, sample timing and mode). The data were used to determine the deposition of solar energy in the atmosphere of Venus between 67 km and the surface along with upward and downward fluxes and radiances with an altitude resolution of several hundred meters. The results allow for more accurate modeling of the radiation balance of the atmosphere than previously possible.

Tomasko, M. G.↗

Optical radiation measurements II; Proceedings of the Meeting, Orlando, FL, Mar. 27, 28, 1989

The present conference discusses topics in the characterization of imaging radiometers, laboratory instrumentation, field and spacecraft instrumentation, and quantum and thermal standard detectors. Attention is given to UV radiometric imaging, dual-color radiometer imagery, a novel diode-array radiometer, a novel reference spectrophotometer, radiance calibration of spherical integrators, instrumentation for measurement of spectral goniometric reflectance, and a real-time IR background discrimination radiometer. Also discussed are a multichannel radiometer for atmosphere optical property measurements, the UV spectroradiometric output of a turbojet, characterizations of the Earth Radiation Budget Experiment scanning radiometers, total-radiation thermometry, future directions in Si photodiode self-calibration, and radiometric quality Ge photodiodes.

Palmer, James M.↗

SEP solar array Shuttle flight experiment

An experiment to verify the operational performance of a full-scale Solar Electric Propulsion (SEP) solar array is described. Scheduled to fly on the Shuttle in 1983, the array will be deployed from the bay for ten orbits, with dynamic excitation to test the structural integrity being furnished by the Orbiter verniers; thermal, electrical, and sun orientation characteristics will be monitored, in addition to safety, reliability, and cost effective performance. The blanket, with aluminum and glass as solar cell mass simulators, is 4 by 32 m, with panels (each 0.38 by 4 m) hinged together; two live Si cell panels will be included. The panels are bonded to stiffened graphite-epoxy ribs and are storable in a box in the bay. The wing support structure is detailed, noting the option of releasing the wing into space by use of the Remote Manipulator System if the wing cannot be refolded. Procedures and equipment for monitoring the array behavior are outlined, and comprise both analog data and TV recording for later playback and analysis. The array wing experiment will also aid in developing measurement techniques for large structure dynamics in space.

Elms, R. V., Jr.↗

Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

Shing, Y. H.↗

Laboratory characterization of direct readout Si:Sb and Si:Ga infrared detector arrays

Highlights of recent results obtained at Ames Research Center in performance evaluations of infrared detector arrays are presented. Antimony- and gallium-doped silicon direct readout 58x62 element hybrid devices from Ames' ongoing detector technology development program are described. The observed characteristics meet most of the performance goals specified by the Space Infrared Telescope Facility (SIRTF) instrument teams and compare favorably with the best performance reported for discrete non-integrating extrinsic silicon detectors. Initial results of radiation environment testing are reported, and non-ideal behavior demonstrated by these test devices is discussed.

Mckelvey, Mark E.↗

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI2 and II-IV-V2 semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI2 and II-IV-V2 compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice-matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V2 compounds and group IV elements are realized, II-IV-V2 alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗