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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Microsemi RTG4 Rev C Field Programmable Gate Array Single Event Effects (SEE) Heavy-Ion Test Report

The goal of this study was to perform an independent investigation of single event destructive and transient susceptibility of the Microsemi RTG4 device. The devices under test were the Microsemi RTG4 field programmable gate array (FPGA) Rev C. The devices under test will be referenced as the DUT or RTG4 Rev C throughout this document. The DUT was configured to have various test structures that are geared to measure specific potential susceptibilities of the device. DesignDevice susceptibility was determined by monitoring the DUT for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) was checked throughout heavy-ion testing by monitoring device current.

Field Programmable Gate Array (FPGA)↗
NASA NTRS2016

Analysis and Simulations of Space Radiation Induced Single Event Effects and Transients

Spacecraft electronic are affected by the space radiation environment. Among the different types of radiation effects that can affect spacecraft electronics is the single event transient (SET). The space environment is responsible for many of the single event transients which can upset the performance of the spacecraft avionics hardware. In this chapter we first explore the origins of single event transients, then explore the modeling of a single event transient in digital and analog circuit. The chapter also addresses the concept of crosstalk that could develop among digital circuits in the present of a SET event. The chapter also provides a discussion of SET hardening. We then provide a discussion concerning propagation of a single event transient event at the local, subsystem, and system level in a spacecraft using two different models, one of the models developed by the author, known as the state transition model. The final goal of the chapter is to provide a qualitatively methodology for assessing single event transients and its effects so that spacecraft avionics engineers can develop either hardware or software countermeasures in their designs. SET is not a form of electromagnetic interference (EMI) in its origin, but semantically SET is very similar to EMI because they are both caused a current source not previously accounted for. SET has the same effects as EMI and it can cause interference problems in electronic circuits via multiple coupling mechanisms similar to EMI, and therefore makes such circuits incompatible.

Perez, Reinaldo J.↗
NASA NTRS2004

Single Event Effects in Highly Scaled Devices for Space Applications

This paper discusses single-event upset (SEU) in memories and microprocessors that are the "drivers" of highly scaled commercial integrated circuits. Despite the decrease in critical charge that occurs for highly scaled CMOS devices, recent test data has shown that SEU rates are actually somewhat lower for scaled devices compared to older devices with larger feature size. Hard errors, which are increasingly important for memories, are discussed along with conventional soft errors. Functional errors in memories and microprocessors are particularly significant, and tend to dominate the response of highly scaled devices from an application standpoint. Predictions for future devices are made using the Semiconductor Industry Roadmap along with recent modeling and radiation test results.

microelectronics↗
NASA NTRS2011

Single-Event Effect (SEE) Survey of Advanced Reconfigurable Field Programmable Gate Arrays: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

The NEPP Reconfigurable Field-Programmable Gate Array (FPGA) task has been charged to evaluate reconfigurable FPGA technologies for use in space. Under this task, the Xilinx single-event-immune, reconfigurable FPGA (SIRF) XQR5VFX130 device was evaluated for SEE. Additionally, the Altera Stratix-IV and SiliconBlue iCE65 were screened for single-event latchup (SEL).

Xilinx Single-Event Effects (SEE) Test Consortium↗
DOE OSTI2018

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.

42 ENGINEERING↗
NASA NTRS2006

Single Event Effects Test Results for the Actel ProASIC Plus and Altera Stratix-II Field Programmable Gate Arrays

This work describes radiation testing of Actel's ProASIC Plus and Altera's Stratix-II FPGAs. The Actel Device Under Test (DUT) was a ProASIC Plus APA300-PQ208 nonvolatile, field reprogrammable device which is based on a 0.22micron flash-based LVCMOS technology. Limited investigation has taken place into flash based FPGA technologies, therefore this test served as a preliminary reference point for various SEE behaviors. The Altera DUT was a Stratix-II EP2S60F1020C4. Single Event Upset (SEU) and Single Event Latchup (SEL) were the focus of these studies. For the Actel, a latchup test was done at an effective LET of 75.0 MeV-sq cm/mg at room temperature, and no latchup was detected when irradiated to a total fluence of 1 x 10(exp 7) particles/sq cm. The Altera part was shown to latchup at room temperature.

heavy ions↗
NASA NTRS2021

Single-Event Effect Test Report Analog Devices LTC1604AIG#90117 ADC

This study is to characterize the destructive single-event latchup (SEL) susceptibility of the LTC1604AIG#90117 (LTC1604) analog/digital converter (ADC). The device was monitored for SEL current events on the power supplies during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. Testing was performed on September 11, 2021.

single-event latchup (SEL)↗
NASA NTRS2023

Single-Event Effect Testing of the Analog Devices AD8041ARZ Operational Amplifier

This study was undertaken to determine the single event transient distribution of a transimpedance amplifier configuration of the AD8041 Operational Amplifier. The AD8041 is made in a bipolar technology and the application of interest has a bipolar supply of ±5 V. The device was monitored for transient events on the output voltage during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory’s (LBNL) 88-inch Cyclotron.

Matthew B. Joplin↗
NASA NTRS1993

Single Event Effects on Space Radiation Hardened 64K SRAMS at Room temperature

The laser threshold linear Energy transfer for single event upsetscan be estimaed, even at room temperature, for space radiation hardened 64K SRAMs. The memories where independently developed to quality for the Qualified Manufacturer's List by IBM and Honeywell. The memory was so hard that high energy heavy ions generated by the Van de Graff could not determine the SEU threshold at room temperature. Use of pulsed Laser tests would meake it possible to forgo very expensive testing at ultra-high energy accelerators.

Space Radiation 64K SRAMS↗
NASA NTRS2015

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.

single event effects↗
NASA NTRS2023

Single-Event Effects Test Report Linux Operating System Configurations on TUL PYNQ-Z2

This study was undertaken to determine the single-event functional interrupt (SEFI) susceptibility on different Linux operating system configurations. The device-under-test (DUT) was the Xilinx Zynq-7020 SoC on the TUL PYNQ-Z2 board. The device was monitored for kernel panics or hangs, classified as SEFIs, to observe any differences in the SEFI cross sections between operating system configurations. The primary purpose of this experiment was to observe if the number of drivers installed in a Linux system affects its overall execution reliability.

Seth S Roffe↗
NASA NTRS2007

Initial Single Event Effects Testing of the Xilinx Virtex-4 Field Programmable Gate Array

We present initial results for the thin epitaxial Xilinx Virtex-4 Fie ld Programmable Gate Array (FPGA), and compare to previous results ob tained for the Virtex-II and Virtex-II Pro. The data presented was a cquired through a consortium based effort with the common goal of pr oviding the space community with data and mitigation methods for the use of Xilinx FPGAs in space.

single event effects↗
NASA NTRS2020

Medical Proton Test Facilities (MPTFs) Lessons Learned on the Unique Aspects for Single Event Effects (SEE) Testing of Electronics in the 200 MeV Regime

Ever since the closure of the Indiana University Cyclotron Facility (IUCF) in 2014, there has been an increasing use of medical proton therapy facilities (MPTF) for SEE testing with protons in the 200 MeV or greater regime. This talk covers some of the unique features and considerations for utilizing MPTFs including both logistical and technical aspects. This presentation provides an overview of lessons learned for SEE testing at MPTFs.

Medical Proton Test Facilities (MPTFs)↗