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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8

Application of adaptive structures in the design of space structures

Future requirements for large precision structures will require a new structural design approach called Adaptive Structures: a system whose geometric and inherent structural characteristics can be changed beneficially to meet the mission requirements either through remote commands or automatically in response to external stimulations. The performance requirements and a ground validation test program for structural designs can be established by the use of Adaptive Structures. The potential value of incorporating Adaptive Structures into the structural design will be described with current analytical and experimental developments.

Wada, Ben K.

Development of deployable structures for large space platforms. Volume 2: Design development

Design evolution, test article design, test article mass properties, and structural analysis of deployable platform systems are discussed. Orbit transfer vehicle (OTV) hangar development, OTV hangar concept selection, and manned module development are discussed. Deployable platform systems requirements, material data base, technology development needs, concept selection and deployable volume enclosures are also discussed.

Greenberg, H. S.

Gas Sensor Test Chip

A new test chip is being developed to characterize conducting polymers used in gas sensors. The chip, a seven-layer cofired alumina substrate with gold electrodes, contains 11 comb and U- bend test structures. These structures are designed to measure the sheet resistance, conduction anisotropy, and peripheral conduction of spin-coated films that are not subsequently patterned.

conducting polymers gas sensors test chipnd periph

Superlattice barrier varactors

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Raman, C.

Dynamics and control of large space structures

An attempt is made to gather data useful to investigators in the fields of large space structure dynamics and control modeling, design and testing. Attention is given to structural dynamics and its relationship to such allied engineering fields as flutter analysis, as well as to problems in the prediction of atmospheric density at orbital altitude. The first challenge posed by large space structure control is the design of control systems with natural frequencies above several major structural frequencies. The establishment of a sufficiently accurate structural model, plant excitation, and shape maintenance, are noted to be additional problems.

Nurre, G. S.

Design, fabrication and test of a lightweight shell structure, phase 3

Progress is reported in the construction of lightweight orthogrid shells. Graphite/epoxy panels are being used in the fabrication. The shell structure is diagramed in detail. Panel laminates, and panel stiffener flanges are described while illustrations delineate panel assembly procedures.

Source record

Space shuttle orbiter windshield system design and test

The development and testing of primary structural elements that are necessary to design a windshield system for the space shuttle orbiter are summarized. The elements include the outer (heat shield) panes, the inner pressure panes, the seals for both panes, and components of both window frames. One test article representing a pressure pane, including frames and seals, was tested under two sets of conditions. One set represented 100 mission cycles with temperature and pressure typical of those exerted on the innermost pane of the three-pane window system, and the second set represented 100 mission cycles with temperature and pressure typical of those exerted on a middle pane. A second test article representing an outer (heat sheild) pane was tested to conditions of 120 entry cycles, which equates to 100 entry cycles plus sufficient fatigue on the pane to account for 100 boost cycles. All elements of the design survived the test conditions in good condition. Window system for the shuttle orbiter vehicle.

Hayashida, K.

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, B.

Thermal-structural test facilities at NASA Dryden

The National Aero-Space Plane (NASP) has renewed interest in hypersonic flight and hot-structures technology development for both the airframe and engine. The NASA Dryden Thermostructures Research Facility is a unique national facility that was designed to conduct thermal-mechanical tests on aircraft and aircraft components by simulating the flight thermal environment in the laboratory. The layout of the facility is presented, which includes descriptions of the high-bay test area, the instrumentation laboratories, the mechanical loading systems, and the state-of-the-art closed-loop thermal control system. The hot-structures test capability of the facility is emphasized by the Mach-3 thermal simulation conducted on the YF-12 airplane. The Liquid-Hydrogen Structural Test Facility, which is presently in the design phase, will provide the capability of thermally testing structures containing hydrogen.

Deangelis, V. Michael

A historical perspective of the YF-12A thermal loads and structures program

Around 1970, the Y-F-12A loads and structures efforts focused on numerous technological issues that needed defining with regard to aircraft that incorporate hot structures in the design. Laboratory structural heating test technology with infrared systems was largely created during this program. The program demonstrated the ability to duplicate the complex flight temperatures of an advanced supersonic airplane in a ground-based laboratory. The ability to heat and load an advanced operational aircraft in a laboratory at high temperatures and return it to flight status without adverse effects was demonstrated. The technology associated with measuring loads with strain gages on a hot structure was demonstrated with a thermal calibration concept. The results demonstrated that the thermal stresses were significant although the airplane was designed to reduce thermal stresses. Considerable modeling detail was required to predict the heat transfer and the corresponding structural characteristics. The overall YF-12A research effort was particularly productive, and a great deal of flight, laboratory, test and computational data were produced and cross-correlated.

Jenkins, Jerald M.

Design, analysis, and testing of a reusable wingbox for ballistic evaluation of composite structures

Future fighter aircraft will continue to be subjected to severe mechanical loading and ballistic impact. In the past aircraft primary wing structure was constructed predominantly with aluminum, but with increasing aircraft performance the need for more structurally efficient materials is necessary. In an attempt to achieve structural efficiency requirements, aircraft designers have begun using an increasing amount of composite materials. Composite materials were indicated to have a low level of ballistic tolerance in some applications. Composite materials possess the characteristic of structural tailoring, which was utilized to demonstrate that survivability can be designed into a structure. The combat flight environment subjects fighter aircraft wing structures to the effects of combined loading during ballistic impact. These loads were previously demonstrated independently, i.e., the application of structural load, hydrodynamic ram damage, and the effects of airflow. The objective was to design a reusable test fixture for the ballistic evaluation of advanced composite structures under all the effects of combined loading. The fixture that was developed provides a test bed that can completely simulate the flight environment of a generic fighter aircraft wing, but can be used for an indefinite number and variety of tests. It is intended that this fixture will provide a standardized method of ballistically evaluating an advanced composite primary wing structure. This fixture will be used to accomplish the development of designs and/or advanced concepts that lead to a survivable composite wing structure.

Baron, W. G.

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Spitzer, M. B.

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.

DC-10 composite vertical stabilizer ground test program

A review of the structural configuration and ground test program is presented. Particular emphasis is placed on the testing of a full-scale stub box test subcomponent and full span ground test unit. The stub box subcomponent was tested in an environmental chamber under ambient, cold/wet, and hot/wet conditions. The test program included design limit static loads, fatigue spectrum loading to approximately two service lifetimes (with and without damage), design limit damage tolerance tests, and a final residual strength test to a structural failure. The first full-scale ground test unit was tested under ambient conditions. The test unit was to have undergone static, fatigue, and damage tolerance tests but a premature structural failure occurred at design limit load during the third limit load test. A failure theory was developed which explains the similarity in types of failure and the large load discrepancy at failure between the two test articles. The theory attributes both failures to high stress concentrations at the edge of the lower rear spar access opening. A second full-scale ground test unit has been modified to incorporate the various changes resulting from the premature failure. The article has been assembled and is active in the test program.

Palmer, J. M., Jr.

Artemis Internal Science Team Update: Artemis Science Flight Operations

The Artemis Internal Science Team (AIST) is positioned across NASA to provide crossmission Science leadership across the Agency and Artemis. To prepare for the next generation of planetary surface exploration-based extravehicular activities (EVAs), we draw heavily from experience with Apollo, SkyLab, Space Shuttle, International Space Station (ISS), and analog tests to design the structure by which science will be integrated in the Plan, Train, and Fly phases of Artemis missions. AIST members have been working for years to integrate science into the Artemis flight operations structure, most notably through a tight collaboration with the NASA JSC Flight Operations Directorate (FOD). This abstract describes several examples of this integration, including Structure of RealTime Science Integration, the development of the EVA Science Officer Flight Controller Position, the development and testing of the Science Evaluation Room, and the development of Training for Artemis Science Teams.

K E Young