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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2018

Improving the SMAP Level-4 Soil Moisture Product

The NASA Soil Moisture Active Passive (SMAP) mission generates, among other data sets, the Level 4 Soil Moisture (L4 SM) product. The L4 SM algorithm is based on the assimilation of SMAP radiometer brightness temperature observations into the NASA Catchment land surface model using a spatially distributed ensemble Kalman filter. The L4 SM data are published with a mean latency of approx. 2.5 days from the time of observation and provide global, three-hourly, 9 km resolution estimates of surface and root-zone soil moisture and related land surface states and fluxes. In 2018, the product was upgraded from Version 3 to Version 4. Underlying the new version is a revised modeling system that includes improved input parameter datasets for land cover, topography, and vegetation height that are based on recent, high quality space-borne remote sensing observations. Land cover inputs were updated to the GlobCover2009 product, which is based on satellite observations from the Medium Resolution Imaging Spectrometer. Topographic statistics now rely on observations from the Shuttle Radar Topography Mission. Finally, vegetation height inputs are derived from space-borne Lidar measurements. Additionally, SMAP Level-2 soil moisture retrievals and in situ soil moisture measurements were used to calibrate a particular Catchment model parameter that governs the recharge of soil moisture from the models root-zone excess reservoir into the surface excess reservoir. Specifically, the replenishment of soil moisture near the surface from below under non-equilibrium conditions was substantially reduced, which brings the models surface soil moisture more in line with the SMAP Level 2 and in situ soil moisture. Finally, the calibration of the assimilated SMAP brightness temperatures changed substantially from Version 3 to Version 4. Considerable effort went into the version upgrade, creating an expectation that the new version is improved over the old version. Indeed, some aspects of the new version are clearly better. However, other aspects are not, and on balance, the overall improvement is modest at best. In this presentation we summarize the skill of the new and old versions vs. independent in situ measurements and in terms of data assimilation diagnostics, including, for example, the statistics of the (soil moisture) analysis increments and the observation minus forecast (brightness temperatures) residuals. We share our experience with trying to improve to the L4 SM product and the lessons learned from the effort.

Reichle, Rolf↗
NASA NTRS1985

Evolution of Titan's coupled ocean-atmosphere system and interaction of ocean with bedrock

A recent model for the surface state of Titan proposes a liquid ethane-methane-molecular nitrogen layer of order one kilometer thick which because of stratospheric methane photolysis has become increasingly ethane-rich with time. The interaction of such an ocean with the underlying 'bedrock' of Titan (assumed to be water-ice or ammonia hydrate) and with the primarily nitrogen atmosphere is explored. It is concluded that although modest exchange of oceanic hydrocarbons with enclathrated methane in the bedrock can in principle occur, it is unlikely for reasonable regolith depths. The surprisingly high solubility of water-ice in liquid methane implies that topographic features on Titan of order 100 meters in height can be eroded away on a time scale of one-billion years. The large solubility difference of N2 in methane versus ethane implies that the ocean composition is a strong determinant of atmospheric pressure; a simple radiative model of the Titan atmosphere is employed to demonstrate that significant surface pressure and temperature changes can occur as the oceanic composition evolves with time.

Lunine, J. I.↗
NASA NTRS1973

Earth and Ocean Physics Applications Program /EOPAP/

Abbreviated description of the objectives, experiments, spacecraft, and required schedules of a proposed NASA program blending geophysics, oceanography, and space technology in order to facilitate the prediction of earthquakes, storm surges, tidal waves, and the condition of ocean surfaces. Relevant measurements from space will be carried out by LAGEOS, SAESATS-1, GEOPAUSE, GRAVSAT, and SEASATS-2 satellites contributing data on earth dynamics, sea surface states, satellite dynamics, and earth gravity. The development of suitable mathematical models for predicting events on earth on the basis of satellite data is considered.

Vonbun, F. O.↗
NASA NTRS1975

Effects of ionizing radiation on CCD's

The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.

Hartsell, G. A.↗
NASA NTRS1975

Surface structure and electronic properties of materials

A surface potential model is developed to explain dopant effects on chemical vapor deposition. Auger analysis of the interaction between allotropic forms of carbon and silicon films has shown Si-C formation for all forms by glassy carbon. LEED intensity measurements have been used to determine the mean square displacement of surface atoms of silicon single crystals, and electron loss spectroscopy has shown the effect of structure and impurities on surface states located within the band gap. A thin film of Al has been used to enhance film crystallinity at low temperature.

Siekhaus, W. J.↗
NASA NTRS1975

Electron and proton damage coefficients in low-resistivity silicon

The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.

Srour, J. R.↗
NASA NTRS1976

Fixed charge in Cr-metallized MOS capacitors

It is pointed out that the reported measurements are useful in a study of interface charge distributions. Measurements of surface-state density at the SiO2 interface given information concerning the effect of the layer thickness on the flat-band interface charge. Other measurements provide data for a determination of the silicon-silica flat-band interface charge, the metal-silica interface charge, and the difference in barrier energies at the interfaces. Measurements of Fowler-Nordheim currents as a function of oxide thickness can be used for the determination of charge distribution in the area next to the metal-silica interface. The investigation shows that the silicon-silica interface is independent of thickness down to thicknesses as low as 40 A.

Lewicki, G.↗
NASA NTRS1977

High efficiency thin-film GaAs solar cells

Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

Stirn, R. J.↗
NASA NTRS1977

Properties of TiO2 thin films and a study of the TiO2-GaAs interface

Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.

Chen, C. Y.↗
NASA NTRS1982

Studies of clusters in the gas phase and application to an understanding of transitions from gaseous to the surface and condensed state

Studies of the structure, stability, electronic properties, and formation kinetics of small clusters were reviewed which provide information useful in furthering understanding of nucleation processes, liquid state properties, and the nature of surfaces. Using mass spectrometric coupled with various high pressure ion clustering and Stark effect-molecular beam techniques, the details of the primary clustering steps leading to the nucleation of bulk liquid from the vapor were and obtained by direct observation results are presented.

Castleman, A. W., Jr.↗
NASA NTRS1982

The utilization of Nimbus-7 SMMR measurements to delineate rainfall over land

Based on previous theoretical calculations, an empirical statistical approach to use satellite multifrequency dual polarized passive microwave data to detect rainfall areas over land was initiated. The addition of information from a lower frequency channel (18.0 or 10.7 GHz) was shown to improve the discrimination of rain from wet ground achieved by using a single frequency dual polarized (37 GHz) channel alone. The algorithm was developed and independently tested using data from the Nimbus-7 Scanning Multichannel Microwave Radiometer. Horizontally and vertically polarized brightness temperature pairs at 37, 18, 10.7 GHz were sampled for raining areas over land (determined from ground base radar), wet ground areas (adjacent and upwind from rain areas determined from radar), and dry land regions (areas where rain had not fallen in a 24h period) over the central and eastern United States. Surface thermodynamic temperatures were both above and below 15 deg C.

Rogers, E.↗
NASA NTRS1985

Giant Planets and Their Satellites: Cosmochemistry, Evolution and Structure

The following topics were discussed: surface state of Titan; statistical mechanical treatment of clathrate hydrates; planetary dynamos; formation of the giant planets; the e-ring; Uranian satellites and atmosphere; 10 sulfur lakes; episodic tidal evolution; resurfacing of Ganymede; and the origin of the Moon.

Stevenson, D. J.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗