Search NASA⌕ Search

SEARCH · Search NASA

Results for “Y doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Carbon Nanotube Based Molecular Electronics

Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

Srivastava, Deepak↗
NASA NTRS2014

Valence State Partitioning of V between Pyroxene and Melt for Martian Melt Compositions Y 980459 and QUE 94201: The Effect of Pyroxene Composition and Crystal Structure

A spiked (with REE, V, Sc) martian basalt Y980459 composition was used to synthesize olivine, spinel, and pyroxene at 1200 C at 5 oxygen fugacities: IW-1, IW, IW+1, IW+2, and QFM. The high spike levels for REE were used for two specific reasons. First, we wanted to be able to analyze REE by both electron microprobe and ion probe. Second, we wanted the most important "Others" components, (i.e., those outside the pyroxene quadrilateral such as Al, Cr3+, Fe3+, REE3+, V3+, V4+, etc.) to be REE3+Mg (Si,Al)2O6. At the doped levels we used, the most important "Others" component is REE3+ in the M2 site coupled with Al in the tetrahedral site. The goal of this paper is to explain the significant increase in the value of D(sub V)(sup pyroxene/melt) with increased Wo content of the pyroxene. We compare augite (Wo approx. 33), pigeonite (Wo approx. 13) and orthopyroxene (Wo approx 3.8). We also show olivine for comparison. The crystal chemical factors which account for this remarkable increase of DV with Wo are twofold. First, with Ca in the M2 site (as in diopside, CaMgSi2O6) the site is large and 8-coordinated while Mg in the M2 site (as in enstatite, Mg2Si2O6) the site is smaller and 6- coordinated. Second, tetrahedral Al in the pyroxene chains provides charge balance and makes the M2 site larger and more compliant for the introduction of REE.

Papike, J. J.↗
DOE OSTI2025

Facet-Dependent Doping and Dopant-Dependent Faceting in Si-Doped GaAsSb Nanowires

Here, we correlate the spatial distributions of Si, Sb, and rotational twins in Si-doped GaAs 1-x Sb x nanowires. GaAs 1-x Sb x nanowires were grown epitaxially on Si(111) substrates by tuning process conditions to achieve repeated nucleation of rotational twins and growth along the [111]B direction; dilute Sb and Si fluxes were chosen to create a sufficient twin density to achieve high yield while avoiding growth of the wurtzite phase. While the impact of Si and Sb on twin density and nanowire growth rate has been previously reported, the facet-dependent incorporation of these species has not been established. Scanning transmission electron microscopy was used to confirm that Sb incorporates preferentially on the (111)B facets relative to {1 ̅1 ̅0} facets prior to nucleation of a rotational twin. With periodic twinning, this facet dependence leads to alternating regions of enriched and depleted Sb concentration attributed to a growth rate-dependent Sb-As-exchange mechanism. Atom probe tomography measurements establish that while Si doping is not perturbed by twinning on (111)B facets, Si and Sb concentrations are anti-correlated for growth on non-(111)B facets. Density functional theory calculations underpin a thermodynamic model that explains the observed anisotropies in dopant incorporation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tuning the Spin Transition and Carrier Type in Rare-Earth Cobaltates via Compositional Complexity

There is growing interest in material candidates with properties that can be engineered beyond traditional design limits. Compositionally complex oxides (CCO), often called high entropy oxides, are excellent candidates, wherein a lattice site shares more than four cations, forming single-phase solid solutions with unique properties. However, the nature of compositional complexity in dictating properties remains unclear, with characteristics that are difficult to calculate from first principles. Here, in this study, compositional complexity is demonstrated as a tunable parameter in a spin-transition oxide semiconductor La 1- x (Nd, Sm, Gd, Y) x/4 CoO 3 , by varying the population x of rare earth cations over 0.00≤ x≤ 0.80. Across the series, increasing complexity is revealed to systematically improve crystallinity, increase the amount of electron versus hole carriers, and tune the spin transition temperature and on-off ratio. At high a population (x = 0.8), Seebeck measurements indicate a crossover from hole-majority to electron-majority conduction without the introduction of conventional electron donors, and tunable complexity is proposed as new method to dope semiconductors. First principles calculations combined with angle resolved photoemission reveal an unconventional doping mechanism of lattice distortions leading to asymmetric hole localization over electrons. Thus, tunable complexity is demonstrated as a facile knob to improve crystallinity, tune electronic transitions, and to dope semiconductors beyond traditional means.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Molecular Origins of Temperature-Dependent X-ray Absorption in YAG:Dy

The absorption and emission of X-rays in dysprosium-doped yttrium aluminum garnet (YAG:Dy) has produced unexpected thermographic behavior, which is investigated using a combination of finite temperature ab initio molecular dynamic simulations, structural characterization, and electronic structure calculations of X-ray characteristics. Calculated average peak X-ray absorption spectra (XAS) from simulations between 300 and 600 K result in peak intensity loss due to thermalization effects, matching experimentally measured behavior of YAG:Dy. Here, investigation of atomic snapshots indicates structural factors that correlated with the X-ray behavior, with the first Y–O coordination sphere identified as the primary structural feature unique to high XAS intensity as calculated by radial and pair distribution functions.

Ab initio molecular dynamics↗
NASA NTRS1987

P/N InP homojunction solar cells by LPE and MOCVD techniques

P/N InP homojunction solar cells have been prepared by using both liquid phase epitaxy (LPE) and metallorganic chemical vapor deposition (MOCVD) growth techniques. A heavily doped p-In sub 0.53Ga sub 0.47As contacting layer was incorporated into the cell structure to improve the fill factor and to eliminate surface spiking at the front surface. The best conversion efficiencies (total area) obtained under AM 1 illumination are 14.2 percent for a LPE cell and 15.4 percent for a MOCVD cell.

Choi, K. Y.↗
NASA NTRS1984

Ohmic Versus Rectifying Contacts of Au to N-gaas by Ion Sputtering

Results of investigations of argon ion sputtering of heavily doped n-GaAs are compared with those obtained from studies of Au/low doping density n-GaAs contacts. The Au contact on Si-doped GaAs was nearly ohmic when the surface contamination (carbon and oxides) was reduced prior to deposition by chemical cleaning. However, when ion sputtering was used in situ to clean the surface, rectifying contact was produced whose barrier height varied with the energy of the sputtering ion. It was found that ion sputtering of GaAs doped to more than 3 x 10 to the 18th power/cu may be used to change ohmic contact to rectifying contacts. The barrier height may be changed by changing the ion energy. The behavior results from the sputter creation of deep level acceptor states at the GaAs surface. Annealing after sputtering can restore the contact to nearly an ohmic character.

Wang, Y. X.↗
NASA NTRS1975

Electron and proton damage coefficients in low-resistivity silicon

The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.

Srour, J. R.↗
NASA NTRS1986

Evaluation of a Si:Ga direct readout array

Preliminary results from the Hughes 58 x 62 gallium-doped silicon infrared array are presented. The device functioned predictably and repeatedly at the low temperatures for the Space Infrared Telescope Facility (SIRTF). Power dissipation was reduced to acceptable levels while still maintaining the device speed. The infrared response was excellent and the degree of anomalous effects was compatible to conventional photoconductors.

Lamb, G. M.↗
NASA NTRS1982

Ceramic thermal barrier coatings for gas turbine engines

The results of studies concerning the high temperature corrosion resistance of ZrO2-Y2O3, ZrO2-MgO, and Ca2SiO4 plasma-sprayed coatings, which may be used as gas turbine engine thermal barriers, are reported. The coatings were evaluated in atmospheric burner rig and pressurized passage tests, using GT No. 2 fuel in pure form and with sodium, sulfur and vanadium corrosive impurities doping. It is found that, while the coatings performed well in both pressurized passage and burner rig tests with pure fuel chemical reactions between the ceramic coatings and combustion gases/condensates resulted in coating degradation with impure fuels. Chemical reactions between the ceramic coatings and vanadium compounds played a critical role in coating degradation.

Bratton, R. J.↗
DOE OSTI2024

Designing multicomponent hydrides with potential high T c superconductivity

While hydrogen-rich materials have been demonstrated to exhibit high T c superconductivity at high pressures, there is an ongoing search for ternary, quaternary, and more chemically complex hydrides that achieve such high critical temperatures at much lower pressures. First-principles searches are impeded by the computational complexity of solving the Eliashberg equations for large, complex crystal structures. Here, we adopt a simplified approach using electronic indicators previously established to be correlated with superconductivity in hydrides. This is used to study complex hydride structures, which are predicted to exhibit promisingly high critical temperatures for superconductivity. In particular, we propose three classes of hydrides inspired by the Fm$\overline{3}$ m RH 3 structures that exhibit strong hydrogen network connectivity, as defined through the electron localization function. The first class [RH 11 X 3 Y] is based on a Pm$\overline{3}$m structure showing moderately high T c , where the T c estimate from electronic properties is compared with direct Eliashberg calculations and found to be surprisingly accurate. The second class of structures [(RH 11 ) 2 X 6 YZ] improves on this with promisingly high density of states with dominant hydrogen character at the Fermi energy, typically enhancing T c . The third class [(R 1 H 11 )(R 2 H 11 )X 6 YZ] improves the strong hydrogen network connectivity by introducing anisotropy in the hydrogen network through a specific doping pattern. These design principles and associated model structures provide flexibility to optimize both T c and the structural stability of complex hydrides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Enhanced boron doping for diamond growth in cylindrical CVD reactors using a Faraday cage

We report on the use of 3D-printed titanium Faraday cages in a cylindrical resonant cavity CVD reactor for the growth of heavily boron-doped single-crystalline superconducting diamond. We show that the cage enhances boron doping uniformity and provides control of the doping efficiency and growth rate by varying the distance between the plasma and the diamond surface. Using finite element modelling, we demonstrate that the Faraday cage focuses the electric field at the top of the cage whilst also suppressing the electric field inside the cage, thereby pinning the plasma at a fixed height above the sample. This eliminates plasma “hot spots” at the edges of the sample and creates a more uniform plasma electron and hydrogen radical distribution over the sample, resulting in a more uniform boron incorporation.

Boron doped diamond↗
NASA NTRS2003

Microgyroscope with Vibrating Post as Rotation Transducer

The figure depicts a micromachined silicon vibratory gyroscope that senses rotation about its z axis. The rotation-sensitive vibratory element is a post oriented (when at equilibrium) along the z axis and suspended at its base by thin, flexible silicon bands oriented along the x and y axes, respectively. Unlike in the vibratory microgyroscopes described in the immediately preceding article ["Cloverleaf Vibratory Microgyroscope With Integrated Post" (NPO-20688)] and other previous articles in NASA Tech Briefs, the rotation-sensitive vibratory element does not include a cloverleaf-shaped structure that lies (when at equilibrium) in the x-y plane. As in the cases of the previously reported vibratory microgyroscopes, vibrations of the rotation-sensitive vibratory element are excited electrostatically, the vibrations are measured by use of capacitive proximity sensors, and the rate of rotation along the axis of sensitivity is deduced from the effect of the Coriolis force upon the vibrations. To create electrodes for electrostatic excitation and capacitive sensing of vibrations, portions of the facing surfaces of the post and of the four stationary members that surround the post are rendered electrically conductive; this can be accomplished by either depositing metal films or else doping the silicon in the affected areas.

Tang, Tony K.↗
NASA NTRS1986

Transit time and charge storage measurements in heavily doped emitters

A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

Neugroschel, A.↗
DOE OSTI2024

Tuning Exciton Emission via Ferroelectric Polarization at a Heterogeneous Interface between a Monolayer Transition Metal Dichalcogenide and a Perovskite Oxide Membrane

Here we demonstrate the integration of a thin BaTiO 3 (BTO) membrane with monolayer MoSe 2 in a dual gate device that enables in-situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D materials has been challenging. Released functional oxide membranes offer a solution for 2D/3D integration via stacking. 2D TMD excitons can serve as a local probe of the ferroelectric polarization in BTO at a heterogeneous interface. Using photoluminescence (PL) of MoSe 2 excitons to optically readout the doping level, we find that the relative population of charge carriers in MoSe 2 depends sensitively on the ferroelectric polarization. This finding points to a promising avenue for future-generations versatile sensing devices with high sensitivity, fast read-out, and diverse applicability for advanced signal processing.

42 ENGINEERING↗
NASA NTRS1986

The 20 GHz spacecraft IMPATT solid state transmitter

The engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency range is described. This effort involved a multitude of disciplines including IMPATT device development, circulator design, multiple-diode circuit design, and amplifier integration and test. The objective was to develop a transmitter amplifier demonstrating the feasibility of providing an efficient, reliable, lightweight solid-state transmitter to be flown on a 30 to 20 GHz communication demonstration satellite. The work was done under contract from NASA/Lewis Research Center for a period of three years. The result was the development of a GaAs IMPACT diode amplifier capable of an 11-W CW output power and a 2-dB bandwidth of 300 MHz. GaAs IMPATT diodes incorporating diamond heatsink and double-Read doping profile capable of 5.3-W CW oscillator output power and 15.5% efficiency were developed. Up to 19% efficiency was also observed for an output power level of 4.4 W. High performance circulators with a 0.2 dB inserting loss and bandwidth of 5 GHz have also been developed. These represent a significant advance in both device and power combiner circuit technologies in K-band frequencies.

Best, T.↗