Search NASA⌕ Search

SEARCH · Search NASA

Results for “integrated silicon photonics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

On-chip pulse shaping of entangled photons

The miniaturization of optical systems via integrated photonics is critical to the ultimate scalability and performance of photonic quantum processors, yet many longstanding optical signal processing capabilities—such as Fourier-transform pulse shaping—remain unrealized on chip. In this work, we demonstrate on-chip spectral shaping of entangled photons using a multichannel microring-resonator-based silicon photonic pulse shaper. Achieving line-by-line phase control on a 3 GHz grid for two frequency-bin-entangled qudits, the pulse shaper's fine spectral resolution enables control of nanosecond-scale temporal features, which are observed by direct coincidence detection of biphoton correlation functions that show excellent agreement with theory. This work marks a demonstration of biphoton pulse shaping using an integrated spectral shaper and holds significant promise for applications in photonic quantum information processing.

Entanglement manipulation↗
DOE OSTI2025

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗
DOE OSTI2021

Multi-energy reconstructions, central electron temperature measurements, and early detection of the birth and growth of runaway electrons using a versatile soft x-ray pinhole camera at MST

A multi-energy soft x-ray pinhole camera has been designed, built, and deployed at the Madison Symmetric Torus to aid the study of particle and thermal transport, as well as MHD stability physics. This novel imaging diagnostic technique employs a pixelated x-ray detector in which the lower energy threshold for photon detection can be adjusted independently on each pixel. The detector of choice is a PILATUS3 100 K with a 450 μm thick silicon sensor and nearly 100 000 pixels sensitive to photon energies between 1.6 and 30 keV. An ensemble of cubic spline smoothing functions has been applied to the line-integrated data for each time-frame and energy-range, obtaining a reduced standard-deviation when compared to that dominated by photon-noise. The multi-energy local emissivity profiles are obtained from a 1D matrix-based Abel-inversion procedure. Central values of Te can be obtained by modeling the slope of the continuum radiation from ratios of the inverted radial emissivity profiles over multiple energy ranges with no a priori assumptions of plasma profiles, magnetic field reconstruction constraints, high-density limitations, or need of shot-to-shot reproducibility. In tokamak plasmas, a novel application has recently been tested for early detection, 1D imaging, and study of the birth, exponential growth, and saturation of runaway electrons at energies comparable to 100 × Te,0; thus, early results are also presented.

Delgado-Aparicio, L. F. (ORCID:0000000167394380)↗
DOE OSTI2024

Förster Resonance Energy Transfer and Enhanced Emission in Cs 4 PbBr 6 Nanocrystals Encapsulated in Silicon Nano-Sheets for Perovskite Light Emitting Diode Applications

Encapsulating Cs 4 PbBr 6 quantum dots in silicon nano-sheets not only stabilizes the halide perovskite, but also takes advantage of the nano-sheet for a compatible integration with the traditional silicon semiconductor. Here, we report the preparation of un-passivated Cs 4 PbBr 6 ellipsoidal nanocrystals and pseudo-spherical quantum dots in silicon nano-sheets and their enhanced photoluminescence (PL). For a sample with low concentrations of quantum dots in silicon nano-sheets, the emission from Cs 4 PbBr 6 pseudo-spherical quantum dots is quenched and is dominated with Pb 2+ ion/silicene emission, which is very stable during the whole measurement period. For a high concentration of Cs 4 PbBr 6 ellipsoidal nanocrystals in silicon nano-sheets, we have observed Förster resonance energy transfer with up to 87% efficiency through the oscillation of two PL peaks when UV excitation switches between on and off, using recorded video and PL lifetime measurements. In an area of a non-uniform sample containing both ellipsoidal nanocrystals and pseudo-spherical quantum dots, where Pb 2+ ion/silicene emissions, broadband emissions from quantum dots, and bandgap edge emissions (515 nm) appear, the 515 nm peak intensity increases five times over 30 min of UV excitation, probably due to a photon recycling effect. This irradiated sample has been stable for one year of ambient storage. Cs 4 PbBr 6 quantum dots encapsulated in silicon nano-sheets can lead to applications of halide perovskite light emitting diodes (PeLEDs) and integration with traditional semiconductor materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

3D Hybrid Plasmonic Framework with Au Nanopillars Embedded in Nitride Multilayers Integrated on Si

Integration of nanoscale photonic and plasmonic components on Si substrates is a critical step toward Si-based integrated nanophotonic devices. Herein, a set of unique complex 3D metamaterials with intercalated nanolayered and nanopillar structures with tunable plasmonic and optical properties on Si substrates is designed. More specifically, the 3D metamaterials combine metal (Au) nanopillars and alternating metal-nitride (Au-TiN and Au-TaN) nanolayers, epitaxially grown on Si substrates. The ultrafine Au nanopillars ( d ≈ 3 nm) continuously grow throughout all the nanolayers with high epitaxial quality. Novel optical properties, such as highly anisotropic optical property, high absorbance covering the entire visible spectrum regime, and hyperbolic property in the visible regime, are demonstrated. Furthermore, a waveguide based on a silicon nitride (Si 3 N 4 ) ridge with a multilayer structure is successfully fabricated. The demonstration of 3D nanoscale metamaterial design integrated on Si opens up a new route toward tunable metamaterials nanostructure designs with versatile material selection for various optical components in Si integrated photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Surface plasmon-cavity hybrid state and its graphene modulation at THz frequencies

Fabry–Pérot (F–P) cavity and metal hole array are classic photonic devices. Integrating F–P cavity with holey metal typically enhances interfacial reflection and dampens wave transmission. In this work, a hybrid bound surface state is found within rectangular metal holes on a silicon substrate by merging an extraordinary optical transmission (EOT) mode and a high-order F–P cavity mode both spatially and spectrally. Transmission, Q-factor, and bandwidth can be enhanced significantly with respect to the classical EOT and F–P interference by simply sweeping the cavity length. This state can provide EOT properties and ten times broader EOT bandwidth well below the effective plasma frequency of the periodic metal holes, where the metal holes typically show evanescent properties and do not support EOT in theory. Furthermore, a large modulation range of 25 % and 39 % is demonstrated with various graphene patterns for the transmittance of this hybrid state at 500 and 582 GHz, respectively.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Phototransistors For Long-Wavelength Infrared

Phototransistors of proposed new type used to detect photons having wavelengths of 8 to 150 micrometers. Detection based on impurity-to-continuum transitions. Integrated-circuit imaging arrays of such phototransistors useful in infrared remote sensing. Device of this type silicon, germanium, or silicon/germanium phototransistor in which junction between collector and base lightly doped with impurities.

Borenstain, Shmuel I.↗
NASA NTRS1990

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗
DOE OSTI2023

Heterogeneous integration of an electro-optical platform

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Kodigala, Ashok↗
NASA NTRS1995

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗
DOE OSTI2021

Self-Isolated Raman Lasing with a Chiral Dielectric Metasurface

The light sources that power photonic networks are small and scalable, but they also require the incorporation of optical isolators that allow light to pass in one direction only, protecting the light source from damaging backreflections. Unfortunately, the size and complex integration of optical isolators makes small-scale and densely integrated photonic networks infeasible. Here, we overcome this limitation by designing a single device that operates both as a coherent light source and as its own optical isolator. Our design relies on high-quality-factor dielectric metasurfaces that exhibit intrinsic chirality. By carefully manipulating the geometry of the constituent silicon metaatoms, we design three-dimensionally chiral modes that act as optical spin-dependent filters. Using spin-polarized Raman scattering together with our chiral metacavity, we demonstrate Raman lasing in the forward direction, while the lasing action is suppressed by over an order of magnitude for reflected light. Our high-$\textit{Q}$ chiral metasurface design presents a new approach toward compactly isolating integrated light sources by directly tailoring the emission properties of the light source itself.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2014

HgCdTe e-APD Detector Arrays with Single Photon Sensitivity for Space Lidar Applications

A multi-element HgCdTe electron initiated avalanche photodiode (e-APD) array has been developed for space lidar applications. The detector array was fabricated with 4.3-μm cutoff HgCdTe which covered a spectral response from 0.4 to 4.3 μm. We have characterized a 4x4 detector array with 80 μm square elements and an integrated custom cryogenic silicon read-out integrated circuit (ROIC). The device operated at 77K inside a small closed-cycle Dewar. Measurements showed a unity gain quantum efficiency of about 90% at 1.55 μm. The bulk dark current of the HgCdTe e-APD at 77K was less than 50,000 input referred electrons/s at 12 V APD bias where the APD gain was 620 and the measured noise equivalent power (NEP) was 0.4 fW/Hz1/2. The electrical bandwidth of the ROIC was about 6 MHz, which was chosen to match the laser pulse width of our CO2 lidar. Even with the relatively low bandwidth, the high APD gain and low dark current enabled the device to detect single photon events. Because the APD was biased below the break-down voltage, the detector output was linear with the input optical signal and there was no dead-time and afterpulsing. A new series of HgCdTe e-APDs are being developed with a much wider bandwidth ROIC and higher gain HgCdTe e-APD array, which is expected to give a much better performance in linear mode photon counting applications.

HgCdTe↗
DOE OSTI2024

Scalable Nanoimprint Manufacturing of Functional Multilayer Metasurface Devices

Optical metasurfaces, consisting of subwavelength-scale meta-atom arrays, hold great promise of overcoming the fundamental limitations of conventional optics. Due to their structural complexity, metasurfaces usually require high-resolution yet slow and expensive fabrication processes. Here, using a metasurface polarimetric imaging device as an example, the photonic structures and the Nanoimprint lithography (NIL) processes are designed, creating two separate NIL molds over a patterning area of > 20 mm2 with designed Moiré alignment markers by electron-beam writing, and further subsequently integrate silicon and aluminum metasurface structures on a chip. Uniquely, the silicon and aluminum metasurfaces are fabricated by using the nanolithography and 3D pattern-transfer capabilities of NIL, respectively, achieving nanometer-scale linewidth uniformity, sub-200 nm translational overlay accuracy, and <0.017 rotational alignment error while significantly reducing fabrication complexity and surface roughness. Here, the micro-sized multilayer metasurfaces have high circular polarization extinction ratios as large as ≈20 and ≈80 in blue and red wavelengths. Further, the metasurface chip-integrated CMOS imager demonstrates high accuracy in broad-band, full Stokes parameter analysis in the visible wavelength ranges and single-shot polarimetric imaging. This novel, NIL-based, multilayered nanomanufacturing approach is applicable to the scalable production of large-area functional structures for ultra-compact optic, electronic, and quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Temperature Mapping of Stacked Silicon Dies from X-Ray-Diffraction Intensities

Increasing power densities in integrated circuits have led to an increased prevalence of thermal hotspots in integrated circuits. Tracking these thermal hotspots is imperative to prevent circuit failures. In three- dimensional (3D) integrated circuits, conventional surface techniques like infrared thermometry are unable to measure the 3D temperature distribution, and optical and magnetic resonance techniques are difficult to apply due to the presence of metals and large current densities. X-rays offer a high penetration depth and can be used to probe 3D structures. We report a method utilizing the temperature dependence of x-ray-diffraction intensity via the Debye-Waller factor to simultaneously map the temperature of individual silicon dies in a stack. Here, utilizing beamline 1-ID-E at the Advanced Photon Source (Argonne), we demonstrate, for each individual silicon die, a temperature resolution of 3 K, a spatial resolution of 100 × 400 μm 2 , and a temporal resolution of 20 s. Utilizing a sufficiently high-intensity laboratory source, e.g., from a liquid-anode source, this method can be scaled down to laboratories for noninvasive temperature mapping of 3D integrated circuits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Scalable photonic integrated circuits for high-fidelity light control

Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of optical control systems that can manipulate the light field with high fidelity at wavelengths relevant for AMO applications. These systems are characterized by criteria: (C1) operation at a design wavelength of choice in the visible (VIS) or near-infrared (IR) spectrum, (C2) a scalable platform that can support large channel counts, (C3) high-intensity modulation extinction and (C4) repeatability compatible with low gate errors, and (C5) fast switching times. Here, we provide a pathway to address these challenges by introducing an atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology. Based on a complementary metal–oxide–semiconductor fabrication process, this atom-control PIC (APIC) technology can meet system requirements (C1)–(C5). As a proof of concept, we demonstrate a 16-channel silicon-nitride-based APIC with (5.8±0.4)ns response times and >30dB extinction ratio at a wavelength of 780 nm.

Menssen, Adrian J.↗
DOE OSTI2025

Enhanced biochemical sensing with high- Q transmission resonances in free-standing membrane metasurfaces

Optical metasurfaces provide solutions to label-free biochemical sensing by localizing light resonantly beyond the diffraction limit, thereby selectively enhancing light–matter interactions for improved analytical performance. However, high-Q resonances in metasurfaces are usually achieved in the reflection mode, which impedes metasurface integration into compact imaging systems. Here, we demonstrate a metasurface platform for advanced biochemical sensing based on the physics of the bound states in the continuum (BIC) and electromagnetically induced transparency (EIT) modes, which arise when two interfering resonances from a periodic pattern of tilted elliptic holes overlap both spectrally and spatially, creating a narrow transparency window in the mid-infrared spectrum. We experimentally measure these resonant peaks observed in transmission mode (Q ~ 734 at λ ~ 8.8 µm) in free-standing silicon membranes and confirm their tunability through geometric scaling. We also demonstrate the strong coupling of the BIC-EIT modes with a thinly coated PMMA film on the metasurface, characterized by a large Rabi splitting (32 cm -1 ) and biosensing of protein monolayers in transmission mode. Our new photonic platform can facilitate the integration of metasurface biochemical sensors into compact and monolithic optical systems while being compatible with scalable manufacturing, thereby clearing the way for on-site biochemical sensing in everyday applications.

Rosas, Samir [Univ. of Wisconsin, Madison, WI (Uni↗
DOE OSTI2024

Performance of the CMS electromagnetic calorimeter in pp collisions at √$_{s}$ = 13 TeV

The operation and performance of the Compact Muon Solenoid(CMS) electromagnetic calorimeter (ECAL) are presented, based ondata collected in pp collisions at√$_{s}$ =13 TeV at the CERN LHC, in the years from 2015 to 2018(LHC Run 2), corresponding to an integrated luminosity of151 fb$^{-1}$. The CMS ECAL is a scintillating lead-tungstatecrystal calorimeter, with a silicon strip preshower detector in theforward region that provides precise measurements of the energy andthe time-of-arrival of electrons and photons. The successfuloperation of the ECAL is crucial for a broad range of physics goals,ranging from observing the Higgs boson and measuring its properties,to other standard model measurements and searches for newphenomena. Precise calibration, alignment, and monitoring of theECAL response are important ingredients to achieve these goals. Toface the challenges posed by the higher luminosity, whichcharacterized the operation of the LHC in Run 2, the proceduresestablished during the 2011–2012 run of the LHC have been revisitedand new methods have been developed for the energy measurement andfor the ECAL calibration. The energy resolution of the calorimeter,for electrons from Z boson decays reaching theECAL without significant loss of energy by bremsstrahlung, wasbetter than 1.8%, 3.0%, and 4.5% in the |η| intervals[0.0,0.8], [0.8,1.5], [1.5, 2.5], respectively. This resultingperformance is similar to that achieved during Run 1 in 2011–2012,in spite of the more severe running conditions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Miniaturized integrated spectrometer using a silicon ring-grating design

We introduce and experimentally demonstrate a miniaturized integrated spectrometer operating over a broad bandwidth in the short-wavelength infrared (SWIR) spectrum that combines an add-drop ring resonator narrow band filter with a distributed Bragg reflector (DBR) based broadband filter realized in a silicon photonic platform. The contra-directional coupling DBR filter in this design consists of a pair of waveguide sidewall gratings that act as a broadband filter (i.e., 3.9 nm). The re-directed beam is then fed into the ring resonator which functions as a narrowband filter (i.e., 0.121 nm). In this scheme the free spectral range (FSR) limitation of the ring resonator is overcome by using the DBR as a filter to isolate a single ring resonance line. The overall design of the spectrometer is further simplified by simultaneously tuning both components through the thermo-optic effect. Moreover, several ring-grating spectrometer cells with different central wavelengths can be stacked in cascade in order to cover a broader spectrum bandwidth. This can be done by centering each unit cell on a different center wavelength such that the maximum range of one-unit cell corresponds to the minimum range of the next unit cell. This configuration enables high spectral resolution over a large spectral bandwidth and high extinction ratio (ER), making it suitable for a wide variety of applications.

42 ENGINEERING↗