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Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.
Analysis of lunar particle size distribution data indicates that the surface material is composed of two populations. One population is caused by comminution from the impact of the larger-sized meteorites, while the other population is caused by the melting of fine material by the impact of smaller-sized meteorites. The results are referred to Mars, and it is shown that the Martian atmosphere would vaporize the smaller incoming meteorites and retard the incoming meteorites of intermediate and large size, causing comminution and stirring of the particulate layer. The combination of comminution and stirring would result in fine material being sorted out by the prevailing circulation of the Martian atmosphere and the material being transported to regions where it could be deposited. As a result, the Martian surface in regions of prevailing upward circulation is probably covered by either a rubble layer or by desert pavement; regions of prevailing downward circulation are probably covered by sand dunes.
A device for tuning a circuit includes a substrate, a transmission line on the substrate that includes first and second conductors coupled to a circuit to be tuned, and a movable short-circuit for varying the impedance the transmission line presents to the circuit to be tuned. The movable short-circuit includes a dielectric layer disposed atop the transmission line and a distributed shorting element in the form of a conductive member that is configured to be slid along at least a portion of the transmission line atop the dielectric layer. The conductive member is configured to span the first and second conductors of the transmission line and to define at least a first opening that spans the two conductors so that the conductive member includes first and second sections separated by the first opening. The first and second sections of the conductive member combine with the first and second conductors of the transmission line to form first and second low impedance sections of transmission line, and the opening combines with the first and second conductors of the transmission line and the dielectric layer to form a first high impedance section of transmission line intermediate the first and second low impedance sections. Each of the first low impedance section and the first high impedance section have a length along the transmission line of approximately one-quarter wavelength, thus providing a periodic variation of transmission line impedance. That enhances reflection of rf power.
Silicon carbide (SiC) composites are considered to be potential materials for future aircraft engine parts such as combustor liners. It is envisioned that on the hot side (inner surface) of the combustor liner, composites will have to withstand temperatures in excess of 1200 C for thousands of hours in oxidizing environments. This is a severe condition; however, an equally severe, if not more detrimental, condition exists on the cold side (outer surface) of the combustor liner. Here, the temperatures are expected to be on the order of 800 to 1000 C under high tensile stress because of thermal gradients and attachment of the combustor liner to the engine frame (the hot side will be under compressive stress, a less severe stress-state for ceramics). Since these composites are not oxides, they oxidize. The worst form of oxidation for strength reduction occurs at these intermediate temperatures, where the boron nitride (BN) interphase oxidizes first, which causes the formation of a glass layer that strongly bonds the fibers to the matrix. When the fibers strongly bond to the matrix or to one another, the composite loses toughness and strength and becomes brittle. To increase the intermediate temperature stress-rupture properties, researchers must modify the BN interphase. With the support of the Ultra-Efficient Engine Technology (UEET) Program, significant improvements were made as state-of-the-art SiC/SiC composites were developed during the Enabling Propulsion Materials (EPM) program. Three approaches were found to improve the intermediate-temperature stress-rupture properties: fiber-spreading, high-temperature silicon- (Si) doped boron nitride (BN), and outside-debonding BN.
The electromagnetic dispersion relation for two counterstreaming ion beams of arbitrary relative strength flowing parallel to a dc magnetic field is derived. The beams flow through a stationary electron background and the dispersion relation in the fluid approximation is unaffected by the electron thermal pressure. The dispersion relation is solved with a zero net current condition applied and the regions of instability in the k-U space (U is the relative velocity between the two ion beams) are presented. The parameters are then chosen to be applicable for parallel shocks. It was found that unstable waves with zero group velocity in the shock frame can exist near the leading edge of the shock for upstream Alfven Mach numbers greater than 5.5. It is suggested that this mechanism could generate sufficient turbulence within the shock layer to scatter the incoming ions and create the required dissipation for intermediate strength shocks.
Foam insulation nickel-plated with one less step. Changing tie-in layer from plasma-sprayed nickel to plasma-sprayed copper eliminates intermediate copper electroplating step previously required.
The negative gravitropic response in the grass leaf-sheath pulvinus is a consequence of cell elongation involving all cells except those of the uppermost region of the upper flank of an horizontally oriented pulvinus. The lowermost layer of cells elongate maximally, and the regions in between elongate to intermediate extents. The resulting curvatures of a responding pulvinus can be expressed mathematically by relating the angle of curvature (theta) to the original length (L0) and the maximal length of the lower surface (L1) and the diameter of the organ (D), using the equation, theta = (L1-L0)/D, where theta is in radians. The elongation response (S) of any individual cells within the pulvinus can be expressed by the equation, S = 0.5 - r cos theta, where r is the radius of the pulvinus and theta is in degrees. Microscopic measurement of cell lengths in different regions of the pulvinus supports the mathematical predictions. Indirect support is also obtained from the use of colchicine, coumarin, dichlorobenzonitrile (DCBN) and isopropyl N-chlorophenyl carbamate which exaggerate the inherent asymmetry during gravitropic response. Coumarin and DCBN also induce thickenings in the radial walls which appear first in the statenchyma, and later, in cells located towards the outer periphery of the pulvinus. The distribution patterns of these thickenings suggest that the asymmetric growth response of the pulvinus may be due to a differential and radial, centrifugal transport of growth promotors from the central statenchyma region.
It is possible to use a Delay Tolerant Network (DTN) to transport data and/or commanding from one end-point to another end-point where DTN is not used. This implies that at least one or the other end-point is sending and receiving as a non-DTN node. It also implies that at least one intermediate node prior to the non-DTN node has a Convergence Layer Adapter (CLA) or application which supports appropriate protocols. This is the basic concept of Rationale, Scenarios, and Requirements for DTN in Space, section 4.2.2.6.3: An application on the last hop relay node may extract TeleCommands(TCs) from an immediate or delayed TC file and radiate them as TCs to their destination (typically orbiter to lander); Rationale: Such an application could be used to support low-level commanding in case the destination spacecraft’s network layer is not functioning properly.
Recent experiments have shown that, in rough-wall turbulent boundary layers, drag varies systematically with the spanwise aspect ratio lambda(z) (span/height) of roughness elements. In this paper, the effect of lambda(z) on turbulence structure has been examined. Based on lambda(z), the roughness in a transversely grooved surface with lambda(z) much greater than 1 is the opposite extreme of model plant canopies with lambda(z) much less than 1, studied in wind tunnels, whereas sandgrain is an intermediate type. Second-, third-, and fourth-order turbulence moments have been measured in turbulent boundary layers over transversely grooved and smooth surfaces and compared with available turbulence structure measurements over other types of surfaces. The near-wall turbulence structure is found to vary with lambda(z). The instantaneous motions involved in the flux of shear stress near the wall in smooth and transversely grooved surfaces are opposite in sign to those in three-dimensional roughness. The former is explained in terms of hairpin vortices alone, while the latter group is modeled to have an additional vortex (the so-called necklace vortex which straddles a three-dimensional roughness element near its base).
Communications between systems is often initially represented at a single, high level of abstraction, a link between components. During design evolution it is usually necessary to elaborate the interface model, defining it from several different, related viewpoints and levels of abstraction. This paper presents a pattern to model such multi-layered interface architectures simply and efficiently, in a way that supports expression of technical complexity, interfaces and behavior, and analysis of complexity. Each viewpoint and layer of abstraction has its own properties and behaviors. System elements are logically connected both horizontally along the communication path, and vertically across the different layers of protocols. The performance of upper layers depends on the performance of lower layers, yet the implementation of lower layers is intentionally opaque to upper layers. Upper layers are hidden from lower layers except as sources and sinks of data. The system elements may not be linked directly at each horizontal layer but only via a communication path, and end-to-end communications may depend on intermediate components that are hidden from them, but may need to be shown in certain views and analyzed for certain purposes. This architectural model pattern uses methods described in ISO 42010, Recommended Practice for Architectural Description of Software-intensive Systems and CCSDS 311.0-M-1, Reference Architecture for Space Data Systems (RASDS). A set of useful viewpoints and views are presented, along with the associated modeling representations, stakeholders and concerns. These viewpoints, views, and concerns then inform the modeling pattern. This pattern permits viewing the system from several different perspectives and at different layers of abstraction. An external viewpoint treats the systems of interest as black boxes and focuses on the applications view, another view exposes the details of the connections and other components between the black boxes. An internal view focuses on the implementation within the systems of interest, either showing external interface bindings and specific standards that define the communication stack profile or at the level of internal behavior. Orthogonally, a horizontal view isolates a single layer and a vertical viewpoint shows all layers at a single interface point between the systems of interest. Each of these views can in turn be described from both behavioral and structural viewpoints.
Using urea and cyanamide, the two condensing agents considered to have been present on the primitive earth, uridine diphosphate glucose (UDPG), cytidine diphosphate choline (CDP-choline), glucose-1-phosphate (G1P), and glucose-6-phosphate (G6P) were synthesized under simulated prebiotic conditions. The reaction products were separated and identified using paper chromatography, thin layer chromatography, enzymatic analyses, and ion-pair reverse-phase high performance liquid chromatography. The possibility of nonenzymatic synthesis of metabolic intermediates on the primitive earth from simple precursors was thus demonstrated.
Examples of an interplanetary and the bow shock illustrate the small relative size of the electrostatic layer relative to the scale of the magnetic fluctuations in quasi-parallel shocks. While both examples are supercritical, the interplanetary example is marginally so, showing a thickness in absolute and convected ion larmor radii units that is thicker (approximately 13 U/omega sub ci) than at the bow shock (approximately omega sub ci). The fluid speed changes abruptly in the quasi-parallel shock on this shorter scale. The increase in electron and ion random energies also is clearly seen on this shorter scale. In the interplanetary example the scale of the electric layer is certainly less than 1/60th that of the up or downstreams magnetic fluctuations. The thickness of the earth's bow shock deceleration layer is dramatically narrower than any domain of upstream waves as controlled by reflected, intermediate, or diffuse ions.
The Thermal Protection System (TPS) for the Shuttle/Centaur had to provide fail-safe thermal protection during prelaunch, launch ascent, and on-orbit operations as well as during potential abort where the Shuttle and Centaur would return to earth. The TPS selected used a helium-purged polyimide foam beneath three radiation shields for the liquid hydrogen (LH2) tank and radiation shields only for the liquid oxygen (LO2) tank (three shields on the tank sidewall and four on the aft bulkhead). An evacuated common intermediate bulkhead separated the two tanks. The LH2 tank had one 1.9-cm thick layer of foam on the forward bulkhead and two layers on the larger area side-wall. Full scale tests of the flight vehicle in a simulated Shuttle cargo bay, that was purged with gaseous nitrogen, gave total prelaunch heating rates of 25.9 kW and 12.9 kW for LH2 and LO2 tanks, respectively. Calorimeter tests on a representative LH2 tank sidewall TPS sample indicated that the measured unit heating rate would rapidly decrease from the prelaunch rate of 300 W/sq m to a desired rate of less than 4 W/sq m once on-orbit.
III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.
A class of solutions to a model of forced oscillations in a rotating stratified atmospheric layer is derived and analyzed. The basic model is found to reduce to a boundary value problem with a second-order linear partial differential equation of the hyperbolic type for this range of forcing frequencies. The forced solutions are shown to exhibit resonances with the normal modes of oscillation of the layer. The characteristics of the resonant modes are analyzed in terms of mean tropospheric values of temperature, temperature lapse, wind speed, horizontal and vertical wind shears, latitude, and the frequency and horizontal wavelength of the forcing mechanism. These solutions are compared with solutions to the model for a different (subinertial) range of forcing frequencies. This comparison leads to an elliptic boundary value problem. The solutions in that case do not exhibit the same type of resonance and generally decay away from the region of forcing.
Modifications of BN-based coatings that are used as interfacial layers between the fibers and matrices of SiCfiber/SiC-matrix composite materials have been investigated to improve the thermomechanical properties of these materials. Such interfacial coating layers, which are also known as interphases (not to be confused with interphase in the biological sense), contribute to strength and fracture toughness of a fiber/matrix composite material by providing for limited amounts of fiber/matrix debonding and sliding to absorb some of the energy that would otherwise contribute to the propagation of cracks. Heretofore, the debonding and sliding have been of a type called inside debonding because they have taken place predominantly on the inside surfaces of the BN layers that is, at the interfaces between the SiC fibers and the interphases. The modifications cause the debonding and sliding to include more of a type, called outside debonding, that takes place at the outside surfaces of the BN layers that is, at the interfaces between the interphases and the matrix (see figure). One of the expected advantages of outside debonding is that unlike in inside debonding, the interphases would remain on the crack-bridging fibers. The interphases thus remaining should afford additional protection against oxidation at high temperature and should delay undesired fiber/fiber fusion and embrittlement of the composite material. A secondary benefit of outside debonding is that the interphase/matrix interfaces could be made more compliant than are the fiber/interphase interfaces, which necessarily incorporate the roughness of the SiC fibers. By properly engineering BN interphase layers to favor outside debonding, it should be possible, not only to delay embrittlement at intermediate temperatures, but also to reduce the effective interfacial shear strength and increase the failure strain and toughness of the composite material. Two techniques have been proposed and partially experimentally verified as candidate means to promote outside debonding in state-of-the-art SiC/SiC composites.
It is pointed out that for the past several years, one school of IC designers has used a simplified set of nMOS geometric design rules (GDR) which is 'portable', in that it can be used by many different nMOS manufacturers. The present investigation is concerned with a preliminary set of design rules for bulk CMOS which has been verified for simple test structures. The GDR are defined in terms of Caltech Intermediate Form (CIF), which is a geometry-description language that defines simple geometrical objects in layers. The layers are abstractions of physical mask layers. The design rules do not presume the existence of any particular design methodology. Attention is given to p-well and n-well CMOS processes, bulk CMOS and CMOS-SOS, CMOS geometric rules, and a description of the advantages of CMOS technology.
A bulk composition for Mars is derived to a pressure-dependent mineralogy. The density distribution of the present model is compared with density distributions derived from the global gravity field. It is argued that the uppermost Martian mantle is likely to be dominated by olivine and orthopyroxene, as is the earth's upper mantle, although the Martian mantle has a lower MgO/(MgO + FeO) ratio (0.74 vs 0.89). The olivine-peridotite layer extends to a depth of 900 to 1100 km where the transition to silicate spinel begins. Calculations of the high-pressure liquidus and solidus temperatures indicate that for the case of a molten core the minimum temperature at the core-mantle boundary is about 2000 K, whereas for the case of a solid core the maximum temperature is about 1800 K. Summation of the masses in the various layers of Mars yields a value of 0.353 for the dimensionless moment of inertia, which is intermediate between the generally accepted value of 0.365 and the value of 0.345 predicated on a nonaxisymmetric distribution of mass about the Tharsis plateau.