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We demonstrate manipulation of the narrowband biphoton temporal correlation function using a GHz-resolution 6-channel silicon photonic spectral shaper, followed by direct detection using commercial detectors.
Neuromorphic computing takes inspiration from the brain to create energy-efficient hardware for information processing, capable of highly sophisticated tasks. Systems built with standard electronics achieve gains in speed and energy by mimicking the distributed topology of the brain. Scaling-up such systems and improving their energy usage, speed and performance by several orders of magnitude requires a revolution in hardware. Here, we discuss how including more physics in the algorithms and nanoscale materials used for data processing could have a major impact in the field of neuromorphic computing. We review striking results that leverage physics to enhance the computing capabilities of artificial neural networks, using resistive switching materials, photonics, spintronics and other technologies. We discuss the paths that could lead these approaches to maturity, towards low-power, miniaturized chips that could infer and learn in real time.
Abstract The extreme miniaturization of a cold-atom interferometer accelerometer requires the development of novel technologies and architectures for the interferometer subsystems. Here, we describe several component technologies and a laser system architecture to enable a path to such miniaturization. We developed a custom, compact titanium vacuum package containing a microfabricated grating chip for a tetrahedral grating magneto-optical trap (GMOT) using a single cooling beam. In addition, we designed a multi-channel photonic-integrated-circuit-compatible laser system implemented with a single seed laser and single sideband modulators in a time-multiplexed manner, reducing the number of optical channels connected to the sensor head. In a compact sensor head containing the vacuum package, sub-Doppler cooling in the GMOT produces 15 μK temperatures, and the GMOT can operate at a 20 Hz data rate. We validated the atomic coherence with Ramsey interferometry using microwave spectroscopy, then demonstrated a light-pulse atom interferometer in a gravimeter configuration for a 10 Hz measurement data rate and T = 0–4.5 ms interrogation time, resulting in Δ g / g = 2.0 × 10 −6 . This work represents a significant step towards deployable cold-atom inertial sensors under large amplitude motional dynamics.
Abstract Over the past few years, extensive work on optical neural networks has been investigated in hopes of achieving orders of magnitude improvement in energy efficiency and compute density via all-optical matrix-vector multiplication. However, these solutions are limited by a lack of high-speed power power-efficient phase tuners, on-chip non-volatile memory, and a proper material platform that can heterogeneously integrate all the necessary components needed onto a single chip. We address these issues by demonstrating embedded multi-layer HfO 2 /Al 2 O 3 memristors with III-V/Si photonics which facilitate non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers, and (de-)interleaver filters. The Mach-Zehnder optical memristor exhibits non-volatile optical phase shifts > π with ~33 dB signal extinction while consuming 0 electrical power consumption. We demonstrate 6 non-volatile states each capable of 4 Gbps modulation. (De-) interleaver filters were demonstrated to exhibit memristive non-volatile passband transformation with full set/reset states. Time duration tests were performed on all devices and indicated non-volatility up to 24 hours and beyond. We demonstrate non-volatile III-V/Si optical memristors with large electric-field driven phase shifts and reconfigurable filters with true 0 static power consumption. As a result, co-integrated photonic memristors offer a pathway for in-memory optical computing and large-scale non-volatile photonic circuits.
Deterministic coupling between photonic nodes in a quantum network is an essential step toward implementing various quantum technologies. The omnidirectionality of free-standing emitters, however, makes this coupling highly inefficient, in particular if the distant nodes are coupled via low numerical aperture (NA) channels such as optical fibers. This limitation requires placing quantum emitters in nanoantennas that can direct the photons into the channels with very high efficiency. Moreover, to be able to scale such technologies to a large number of channels, the placing of the emitters should be deterministic. In this work, we present a method for directly locating single free-standing quantum emitters with high spatial accuracy at the center of highly directional bullseye metal–dielectric nanoantennas. We further employ non-blinking, high quantum yield colloidal quantum dots for on-demand single-photon emission that is uncompromised by instabilities or non-radiative exciton recombination processes. Taken together, this approach results in a record-high collection efficiency of 85% of the single photons into a low NA of 0.5, setting the stage for efficient coupling between on-chip, room temperature nanoantenna-emitter devices and a fiber or a remote free-space node without the need for additional optics.
Dielectric laser accelerators (DLAs) hold great promise for producing economic and compact on-chip radiation sources. On-chip DLAs benefit from fabrication capabilities of the silicon industry and from breakthroughs in silicon-photonic nanostructures to enhance the interaction between particles and laser fields. Seemingly unrelated recent advances in the quantum interactions of electrons and light have raised interest in the underlying classical-quantum correspondence principle at the foundations of electron acceleration. Here, we present the observation of the underlying quantum nature of DLAs: observing quantized peaks in the electron-energy spectra. Our findings demonstrate quasi-phase-matching between an electron wave function and a light wave, which also demonstrates the role of the quantum wave function in the inverse Smith-Purcell effect. We harness the capabilities of an ultrafast transmission electron microscope (UTEM) to maintain a long electron-light interaction length extending over hundreds of periods of the laser pulse, mediated by a silicon-photonic nanograting DLA. The UTEM is shown as a new platform for characterization of future DLA concepts. The results raise fundamental questions regarding the role of quantum mechanics in DLA design, and more generally about the prospects of manipulating particles’ quantum wave functions in accelerator physics.
Abstract Silicon photonic index sensors have received significant attention for label-free bio and gas-sensing applications, offering cost-effective and scalable solutions. Here, we introduce an ultra-compact silicon photonic refractive index sensor that leverages zero-crosstalk singularity responses enabled by subwavelength gratings. The subwavelength gratings are precisely engineered to achieve an anisotropic perturbation-led zero-crosstalk, resulting in a single transmission dip singularity in the spectrum that is independent of device length. The sensor is optimized for the transverse magnetic mode operation, where the subwavelength gratings are arranged perpendicular to the propagation direction to support a leaky-like mode and maximize the evanescent field interaction with the analyte space. Experimental results demonstrate a high wavelength sensitivity of − 410 nm/RIU and an intensity sensitivity of 395 dB/RIU, with a compact device footprint of approximately 82.8 μm 2 . Distinct from other resonant and interferometric sensors, our approach provides an FSR-free single-dip spectral response on a small device footprint, overcoming common challenges faced by traditional sensors, such as signal/phase ambiguity, sensitivity fading, limited detection range, and the necessity for large device footprints. This makes our sensor ideal for simplified intensity interrogation. The proposed sensor holds promise for a range of on-chip refractive index sensing applications, from gas to biochemical detection, representing a significant step towards efficient and miniaturized photonic sensing solutions. Graphical Abstract
Intrinsic Josephson junctions in high-temperature superconductor Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) are known for their capability to emit high-power terahertz photons with widely tunable frequencies. Hotspots, as inhomogeneous temperature distributions across the junctions, are believed to play a critical role in synchronizing the gauge-invariant phase difference among the junctions, so as to achieve coherent strong emission. In this paper, we demonstrate an on-chip in situ sensing technique that can characterize hotspot distributions on BSCCO. This is achieved by fabricating a series of micro-nanosized "sensor" junctions on top of an "emitter" junction and measuring the critical current on the sensors versus the bias current applied to the emitter. Furthermore, this fully electronic on-chip design can enable efficient close-loop control of hotspots in BSCCO junctions and significantly enhance the functionality of superconducting terahertz emitters.
Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies.
Floquet engineering uses time-periodic electromagnetic fields to modify the electronic properties of quantum materials via the creation of Floquet-Bloch states. These photon-dressed states inherit features from both the material and the driving field, enabling the exploration and control of quantum phenomena in light-matter hybrid systems. In non-centrosymmetric materials, shift currents can arise from the quantum geometric properties of electronic wavefunctions. However, shift currents from Floquet-Bloch states remain experimentally unexplored. Here, we employ an on-chip optoelectronic circuit to detect intrinsic terahertz emission from Floquet-Bloch states in T d -WTe 2 under intense optical driving. We observe strong edge-localized terahertz emission that scales linearly with the driving field, consistent with the theoretical prediction for shift currents generated by Floquet-Bloch states. The results advance our understanding of strongly driven quantum materials and provide insights for developing efficient, bias-free terahertz sources for future optoelectronic technologies.
TimePix3 is a 65k hybrid pixel readout chip with simultaneous Time-of-Arrival (ToA) and Time-over-Threshold (ToT) recording in each pixel*. The chip operates without a trigger signal with a sparse readout where only pixels containing events are read out. The flexible architecture allows 40 MHits/s/cm² readout throughput, using simultaneous readout and acquisition by sharing readout logic with transport logic of superpixel matrix formed using 2x4 structure. The chip ToA records 1.5625 ns time resolution. The X-ray and charged particle events are counted directly. However, indirect neutron counts use 6Li fission in a scintillator matrix, such as ZnS(Ag). The fission space-charge region is limited to 5-9 um. A photon from scintillator material excites a photocathode electron, which is further multiplied in dual-stack MCP. The neutron count event is a cluster of electron events at the chip. We report on the EPICS areaDetector** ADTimePix3 driver that controls Serval*** using json commands. The driver directs data to storage and to a real-time processing pipeline and configures the chip. The time-stamped data are stored in raw .tpx3 file format and passed through a socket where the clustering software identifies individual neutron events. The conventional 2D images are available as images for each exposure frame, and a preview is useful for sample alignment. The areaDetector driver allows integration of time-enhanced capabilities of this detector into SNS beamlines controls and unprecedented time resolution.
Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically manipulated for quantum information processing. Here, we integrate MoS 2 monolayers with achiral silicon disk array metasurfaces to enhance and control valley-specific absorption and emission. Through the coupling to the metasurface electric and magnetic Mie modes, the intensity and lifetime of the emission of neutral excitons, trions, and defect bound excitons can be enhanced and shortened, respectively, while the spectral shape can be modified. Additionally, the degree of polarization (DOP) of exciton and trion emission from the valley can be symmetrically enhanced at 100 K. The DOP increase is attributed to both the metasurface-enhanced chiral absorption of light and the metasurface-enhanced exciton emission from the Purcell effect. Finally, combining Si-compatible photonic design with large-scale 2D materials integration, our work makes an important step toward on-chip valleytronic applications approaching room-temperature operation.
Silicon nitride is used for its low optical loss and high thermal stability, making it a suitable platform for visible-light applications in integrated photonic devices. However, its application has been limited due to inefficient light emission, a problem addressed by integrating various types of light emitters onto the platform. In particular, the integration of solution-processable colloidal nanocrystals (NCs) as optical gain materials onto the silicon nitride platform is a promising route but requires a more solid theoretical footing. By leveraging 2D surface-emitting photonic crystal structures combined with NCs, we effectively confine and manipulate light to achieve lasing from green to red. Building on this, we model the light–matter interactions of the low index contrast NC/nitride platform, validated by extensive experimental validations through Fourier imaging techniques, revealing the full photonic band structure and showing clear mode congestion. Finally, these comprehensive studies confirm the potential of hybrid NC-based structures for fully integrated on-chip laser applications and indicate routes for further improvement.
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As computational density for high-performance computing and big-data services continues to scale, performance scalability of next generation computing systems is becoming increasingly constrained by limitations in memory access, power dissipation and chip packaging. The processor-memory communication bottleneck, a major challenge in current multicore processors due to limited pin-out and power budget, presents a detrimental scaling barrier to data-intensive computing. A consortium team of small businesses and leading researchers that includes experts from photonics processor-memory architecture, III/V photonic laser design/fabrication, silicon photonics design/fabrication, photonics packaging and assembly, and FPGA-based high-performance memory controller IP development – to collaboratively develop a commercialization path for a Photonic Memory Controller Module (P-MCM).
Hybrid dynamic systems have recently gained interest with respect to both fundamental physics and device applications, particularly with their potential for coherent information processing. In this work, we will focus on the recent rapid developments of magnon-based hybrid systems, which seek to combine magnonic excitations with diverse excitations for transformative applications in devices, circuits, and information processing. Key to their promising potentials is that magnons are highly tunable excitations and can be easily engineered to couple with various dynamic media and platforms. The capability of reaching strong coupling with many different excitations has positioned magnons well for studying solid-state coherent dynamics and exploiting unique functionality. In addition, with their gigahertz frequency bandwidth and the ease of fabrication and miniaturization, magnonic devices and systems can be conveniently integrated into microwave circuits for mimicking a broad range of device concepts that have been applied in microwave electronics, photonics, and quantum information. We will discuss a few potential directions for advancing magnon hybrid systems, including on-chip geometry, novel coherent magnonic functionality, and coherent transduction between different platforms. As a future outlook, we will discuss the opportunities and challenges of magnonic hybrid systems for their applications in quantum information and magnonic logic.
Thin film lithium niobate (LN) is bringing renewed potential to the realm of integrated photonics. Its strong quadratic and cubic nonlinearities as well as wide transparency window are ideal for realizing on-chip self-referenced soliton microcombs. However, broadband Kerr cavity soliton generation in LN thin films remains challenging due to limited dispersion control and competition from strong stimulated Raman scattering (SRS). Here, we demonstrate the generation of soliton microcombs in LN thin films featuring broad spectral spans up to 4/5 octaves with the emission of dual dispersion waves (2/3 octaves apart) and sub-terahertz repetition rates (down to 335 GHz) by suppressing strong SRS. Numerical simulations based on coupled-mode equations that incorporate Raman effects further elucidate the soliton dynamics in this highly Raman-active material system.
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide materials due to their large optical bandgap. Furthermore, we demonstrate a MoTe 2 -based photodetector featuring strong photoresponse (responsivity = 0.5 A/W -1 ) operating at 1550 nm in silicon photonics enabled by strain engineering the 2D material. Non-planarized waveguide structures show a locally-induced bandgap change of 0.2 eV inside MoTe 2 , resulting in large photo-response, in an otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this photodetector shows a ~100X improved dark current, enabling an efficient noise equivalent power of 90 pW/Hz -0.5 . Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.