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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Hunt, W. D.↗
NASA NTRS2013

Fabrication of Nanovoid-Imbedded Bismuth Telluride with Low Dimensional System

A new fabrication method for nanovoids-imbedded bismuth telluride (Bi--Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi--Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.

Chu, Sang-Hyon↗
NASA NTRS1988

Sensor technology

The objective is to provide necessary expertise and technology to advance space remote sensing of terrestrial, planetary, and galactic phenomena through the use of electromagnetic and electro-optic properties of gas, liquid, and solid state materials technology. The Sensor Technology Program is divided into two subprograms: a base research and development part and a Civil Space Technology Initiative (CSTI) part. The base research and development consists of research on artificially grown materials such as quantum well and superlattice structure with the potential for new and efficient means for detecting electromagnetic phenomena. Research is also being done on materials and concepts for detector components and devices for measuring high energy phenomena such as UV, X-, and gamma rays that are required observables in astrophysis and solar physics missions. The CSTI program is more mission driven and is balanced among four major disciplines: detector sensors; submillimeter wave sensors; LIDAR/DIAL sensors; and cooler technology.

Sokoloski, Martin M.↗
NASA NTRS1990

Multi-Quantum-Well Spatial Light Modulators On Si Substrates

Proposed new class of two-dimensional spatial light modulators (SLM's) based on fabrication of multi-quantum-well (MQW) structures (e.g. of AlGaAs and InGaAs) on silicon substrates. Concept makes two-dimensional SLM arrays by taking advantage of mature technology of silicon charge-coupled devices (CCD's). Features include short response times, high resolution, and low switching energies.

Cutts, James A.↗
NASA NTRS1989

Optically addressed spatial light modulators by MBE-grown nipi MQW structures

Promising approaches for achieving optically addressed spatial light modulators (O-SLMs) are investigated based on combining nipi and multiple quantum well structures. Theoretical aspects of photooptic effects achievable in such structures are treated. Test structures are grown by molecular beam epitaxy using two material systems. (In,Ga)As/GaAs and (Al,Ga)As/GaAs. Experiments show large optically controlled modulation of the absorption coefficient in the quantum well layers, a log power dependence on the control signal, millisecond and shorter time response, and generally predictable behavior. The results are encouraging for several different O-SLM device structures proposed.

Maserjian, Joseph↗
NASA NTRS1991

Optically addressed asymmetric Fabry-Perot modulator

A low power, high contrast optically addressed modulator, operating with normal incidence, has been fabricated. Optically controlled reflection modulation is achieved through optically induced absorption modulation in a periodically delta-doped InGaAs/GaAs multiple quantum well structure inserted in an integrated asymmetric Fabry-Perot resonator. A contrast ratio over 60:1 was measured using a spectrally matched low power InGaAs/GaAs quantum well laser to generate the write (control) signal. The insertion loss for the normally off modulator is 4.6 dB at the highest write signal power (30 mW) used. The device lends itself to the fabrication of arrays for optically addressed spatial light modulation.

Larsson, A.↗
NASA NTRS1995

In(x)Ga(1-x)As/GaAs Quantum-Well Infrared Photodetectors

Choice of materials for present quantum-well infrared photodetectors (QWIPs) affected principally by two considerations. One was that in comparison with GaAs, In(x)Ga(1-x)As is potentially superior quantum-well material because of its stronger absorption of infrared radiation. Other consideration was that in comparison with Al(x)Ga(1-x)As, which is usual barrier material in older devices, GaAs potentially superior barrier material because it exhibits superior transport properties (lower scattering and higher mobility of charge carriers). GaAs is well material in older devices and barrier material in present devices.

Gunapala, Sarath D.↗
NASA NTRS2005

Doping-Induced Interband Gain in InAs/AlSb Quantum Wells

A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, which causes spatial separation of electrons and holes, thereby leading to weak interband dipole matrix elements. In the doping schemes studied, an interior sublayer of each AlSb layer was doped at various total areal densities up to 5 X 10(exp 12) / square cm. It was found that (1) proper doping converts the InAs layer from a barrier to a well for holes, thereby converting the heterostructure from type II to type I; (2) the resultant dipole matrix elements and interband gains are comparable to those of typical type-I heterostructures; and (3) dipole moments and optical gain increase with the doping level. Optical gains in the transverse magnetic mode can be almost ten times those of other semiconductor material systems in devices used to generate medium-wavelength infrared (MWIR) radiation. Hence, doped InAs/AlSb QWs could be the basis of an alternative material system for devices to generate MWIR radiation.

Kolokolov, K. I.↗
NASA NTRS1984

Review of solar fuel-producing quantum conversion processes

The status and potential of fuel-producing solar photochemical processes are discussed. Research focused on splitting water to produce dihydrogen and is at a relatively early stage of development. Current emphasis is primarily directed toward understanding the basic chemistry underlying such quantum conversion processes. Theoretical analyses by various investigators predict a limiting thermodynamic efficiency of 31% for devices with a single photosystem operating with unfocused sunlight at 300 K. When non-idealities are included, it appears unlikely that actual devices will have efficiencies greater than 12 to 15%. Observed efficiencies are well below theoretical limits. Cyclic homogeneous photochemical processes for splitting water have efficiencies considerably less than 1%. Efficiency can be significantly increased by addition of a sacrificial reagent; however, such systems are no longer cyclic and it is doubtful that they would be economical on a commercial scale. The observed efficiencies for photoelectrochemical processes are also low but such systems appear more promising than homogeneous photochemical systems. Operating and systems options, including operation at elevated temperature and hybrid and coupled quantum-thermal conversion processes, are also considered.

Peterson, D. B.↗
NASA NTRS1995

Reliability assessment of multiple quantum well avalanche photodiodes

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Yun, Ilgu↗
NASA NTRS1989

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗
NASA NTRS1995

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

Bolometer Mixers↗
NASA NTRS1991

International Symposium on Space Terahertz Technology, 1st, University of Michigan, Ann Arbor, Mar. 5, 6, 1990, Proceedings

Problems, proposed solutions, and recent results related to the development of solid-state oscillators, detectors, mixers, diode multipliers, and antennas at THz frequencies are addressed. Individual topics considered include: submillimeter heterodyne remote sensing of upper atmospheric gases, planar dipole array antenna with an elliptical lens, twin slot antenna structures integrated with microbolometer detectors for 94-GHz imaging. Also discussed are: quantum-well and quantum-barrier diodes for generating submillimeter wave power, planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths, GaAs Schottky barrier varactor diodes for submillimeter wavelength power generation, planar doped barrier devices for subharmonic mixers.

Ulaby, Fawwaz↗
NASA NTRS1992

Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

Larsson, Anders G.↗
NASA NTRS2004

Novel Biomedical Devices Utilizing Light-Emitting Nanostructures

As part of the NASA project, we are investigating the formation, properties, and performance of QD heterostructures, to be incorporated into a novel biomedical device for detecting bacteria and/or viruses in fluids on board space vehicles. We are presently synthesizing the epitaxial quantum dot structures using molecular beam epitaxy. We recently developed a method for controlling the arrangement of QDs, based upon a combination of buffer layer growth and controlled annealing sequences. This method is promising for producing arrangements of QDs with a locally well-controlled distribution of sizes. In the future, we plan to explore selective pre-patterning of the starting surface using focused ion-beam nanopatterning, which will enable us to precisely tune the compositions, sizes, and placement of the QDs, in order laterally tune the emission and detection wavelengths of QD based devices.

Goldman, Rachel S.↗
NASA NTRS1989

Monolithic III-V/Silicon Spatial Light Modulator

Current techniques for growth of device-quality GaAs on silicon substrates enables fabrication of silicon-based version of photodiode-coupled spatial light modulator. Monolithic photodiode-coupled light-modulator array constructed on silicon substrate by growing InAs/GaAs multiple-quantum-wells over silicon PIN diode layer. Intermediate GaAs buffer layer confines attice-misfit dislocations to vicinity of silicon. Use of silicon makes available wider range of auxiliary on-chip signal-processing circuitry for coding and decoding of data, addition or subtraction of brightness levels, spatial reformatting, and rescaling.

Maserjian, Joseph↗
NASA NTRS2016

First Demonstration of Single-Mode Distributed Feedback Type-I GaSb Cascade Diode Laser Emitting near 2.9 µm

We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 µm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.

type-I↗
NASA NTRS1985

New formalism for two-photon quantum optics. I - Quadrature phases and squeezed states. II - Mathematical foundation and compact notation

A new formalism for analyzing two-photon devices, such as parametric amplifiers and phase-conjugate mirrors, is proposed in part I, focusing on the properties and the significance of the quadrature-phase amplitudes and two-mode squeezed states. Time-stationary quasi-probability noise is also detailed for the case of Gaussian noise, and uncertainty principles for the quadrature-phase amplitudes are outlined, as well as some important properties of the two-mode states. Part II establishes a mathematical foundation for the formalism, with introduction of a vector notation for compact representation of two-mode properties. Fundamental unitary operators and special quantum states are also examined with an emphasis on the two-mode squeezed states. The results are applied to a previously studied degenerate limit (epsilon = 0).

Caves, C. M.↗