Search NASA⌕ Search

SEARCH · Search NASA

Results for “reverse current”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Why do airlines want and use thrust reversers? A compilation of airline industry responses to a survey regarding the use of thrust reversers on commercial transport airplanes

Although thrust reversers are used for only a fraction of the airplane operating time, their impact on nacelle design, weight, airplane cruise performance, and overall airplane operating and maintenance expenses is significant. Why then do the airlines want and use thrust reversers? In an effort to understand the airlines need for thrust reversers, a survey of the airline industry was made to determine why and under what situations thrust reversers are currently used or thought to be needed. The survey was intended to help establish the cost/benefits trades for the use of thrust reversers and airline opinion regarding alternative deceleration devices. A compilation and summary of the responses given to the survey questionnaire is presented.

Yetter, Jeffrey A.↗
DOE OSTI2025

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗
DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Emergent Inductance from Chiral Orbital Currents in a Bulk Ferrimagnet

Here, we report the discovery of a new form of inductance in the bulk ferrimagnet Mn 3 ⁢Si 2 ⁢Te 6 , which features strong spin-orbit coupling, large magnetic anisotropy, and pronounced magnetoelastic interactions. Below its Curie temperature (𝑇 𝐶 ≈ 78 K), Mn 3 ⁢Si 2 ⁢Te 6 hosts chiral orbital currents (COC) that circulate within the crystal lattice and give rise to collective electronic behavior [Control of chiral orbital currents in a colossal magnetoresistance material, Nature (London) 611, 467 (2022).]. By applying a magnetic field along the hard 𝑐 axis and driving the system with low-frequency currents, we uncover a giant inductive response up to millhenry scale, originating from first-order reconfigurations of COC domains. These domains act as coherent mesoscopic inductive elements that resist reversal upon current reduction, producing a large electromotive force and sharply increasing voltage. This emergent inductance defies classical models, occurs without superconductivity or engineered nanostructures, and opens a new frontier in orbital-based quantum functionality and device concepts.

complex materials↗
NASA NTRS1992

InGaAs/InGaAsP/InP strained-layer quantum well lasers at about 2 microns

The first successful operation of InGaAs strained layer quantum well (Sl-QW) injection lasers at about 2 microns is reported. The threshold current density and the external differential quantum efficiency of 5 microns wide and 800 microns long ridge waveguide lasers were 2.5 kA/sq cm and 6 percent, respectively. The devices had a reverse leakage current of less than 20 micro-A at -1 V indicating epitaxial layers with low defect density.

Forouhar, S.↗
NASA NTRS1988

Barrier height enhancement of InP-based n-Ga(0.47)In(0.53)As Schottky-barrier diodes grown by molecular beam epitaxy

Barrier height enhancement of an InP-based p(+)n-Ga(0.47)In(0.53)As Schottky diode grown by MBE has been demonstrated for infra-red photodetector applications. A barrier height of 0.35 eV for n-Ga(0.47)In(0.53)As Schottky barrier diodes, was increased to the effective barrier height of 0.55 eV, with a p(+)-Ga(0.47)In(0.53)As surface layer of 30 nm thick. The results show a reverse leakage current density of 0.0015 A/sq cm and a junction capacitance of 0.3 pF, which are comparable to those of p-Ga(0.47)In(0.53)As Schottky-barrier diodes at a reverse bias voltage of 5 V.

Kim, J. H.↗
DOE OSTI2025

Light-triggered electrochemical biosensor using singlet oxygen for self-powered operation and glucose detection

This study introduces a light-activated sensing strategy that integrates photosensitization with electrochemical detection. The sensor employs Eosin Y, a photosensitizer that generates singlet oxygen ( 1 O 2 ) via type II photosensitization. Immobilized within a thin polymer matrix on a carbon working electrode, Eosin Y produces 1 O 2 , under green light (520 nm) illumination, initiating a redox process that yields a measurable current. To incorporate biosensing capabilities and enable self-powered operation, this 1 O 2 – mediated process was coupled with glucose oxidase (GOx) to construct a fully operational glucose biosensor. The addition of glucose reverses the current flow by causing GOx to compete for electrons, with the resulting current magnitude correlating with glucose concentration providing a sensitive measure of glucose. The biosensor, as proof-of-principle, demonstrated excellent performance over a range of glucose concentrations (0–73 mM), achieving a detection limit (LOD) of 2.8 mM for steady state photocurrent under oxygen-saturated conditions. This platform leverages light and 1 O 2 as stimuli for tunable, on-demand signal control, offering a novel approach for adaptive, real-time biosensing technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements

Abstract Memristive switching, a nonlinear current–voltage ( I – V ) characteristic, has seen a tremendous surge in interest as an approach to achieve implementation of synaptic functions. The memristive switching behavior of self‐assembled NiO nanocrystals is investigated via scanning probe microscopy, based on first‐order reversal curve current–voltage spectroscopy. Synaptic switching is clearly observed as a direct consequence of filament growth (i.e., gradually increased conductance) in the nanocrystals. A spatial dependency of the conduction in the nanocrystals suggests that there is a localization of the switching filament. The current understanding of this localization ignores features related to local lateral variation current, which can generate an excessive local heat and temperature such as electrical dissipation. The observation of low electrical dissipation at the edge of the nanocrystals shows that less energy is wasted as heat such that the bias applied can be utilized more efficiently to assist the nucleation of the filament and thus reduces the power consumption. Electrical power dissipation is also found to scale with nanocrystal height and has spatial dependence within the nanocrystals. The combination of synaptic switching and high density of the nanocrystals demonstrate that it is feasible to exploit them to create a basic architecture for neuromorphic memory devices.

Kurnia, Fran↗
NASA NTRS1992

Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum well lasers in 1.8 micron range

The first successful room-temperature pulsed operation is reported of InGaAs strained layer multiquantum well injection lasers grown by MOVPE on InP substrates in the 1.8 micron range. The threshold current density and the external differential quantum efficiency of the 10 micron wide ridge waveguide lasers were 2.5 kA/sq cm (cavity length = 1 mm) and 5 percent (cavity length = 400 microns), respectively. Broad-area lasers, 100 microns wide and 1 mm long, had a reverse leakage current of less than 10 microamps at -1 V indicating high quality of the epitaxial layers.

Forouhar, S.↗
NASA NTRS2012

Application of the NASCAP Spacecraft Simulation Tool to Investigate Electrodynamic Tether Current Collection in LEO

Recent interest in using electrodynamic tethers (EDTs) for orbital maneuvering in Low Earth Orbit (LEO) has prompted the development of the Marshall ElectroDynamic Tether Orbit Propagator (MEDTOP) model. The model is comprised of several modules which address various aspects of EDT propulsion, including calculation of state vectors using a standard orbit propagator (e.g., J2), an atmospheric drag model, realistic ionospheric and magnetic field models, space weather effects, and tether librations. The natural electromotive force (EMF) attained during a radially-aligned conductive tether results in electrons flowing down the tether and accumulating on the lower-altitude spacecraft. The energy that drives this EMF is sourced from the orbital energy of the system; thus, EDTs are often proposed as de-orbiting systems. However, when the current is reversed using satellite charged particle sources, then propulsion is possible. One of the most difficult challenges of the modeling effort is to ascertain the equivalent circuit between the spacecraft and the ionospheric plasma. The present study investigates the use of the NASA Charging Analyzer Program (NASCAP) to calculate currents to and from the tethered satellites and the ionospheric plasma. NASCAP is a sophisticated set of computational tools to model the surface charging of three-dimensional (3D) spacecraft surfaces in a time-varying space environment. The model's surface is tessellated into a collection of facets, and NASCAP calculates currents and potentials for each one. Additionally, NASCAP provides for the construction of one or more nested grids to calculate space potential and time-varying electric fields. This provides for the capability to track individual particles orbits, to model charged particle wakes, and to incorporate external charged particle sources. With this study, we have developed a model of calculating currents incident onto an electrodynamic tethered satellite system, and first results are shown here.

Adams, Mitzi↗
NASA NTRS2006

Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.

Niedra, Janis M.↗
DOE OSTI2025

Improved Joint FHC+RHC Sterile Analysis with Nu-on-E Sample

The NOvA experiment measures neutrino oscillations in a nearly pure muon neutrino beam. The neutral current (NC) and the muon neutrino charged current (CC) interaction disappearance are studied to search for active-to-sterile neutrino oscillations. NOvA consists of two functionally identical detectors placed 14 mrad off-axis of Fermilab's NuMI beamline. The Near Detector (ND) is located 100 m underground on-site at Fermilab, while the Far Detector (FD) sits on the surface 810 km away at Ash River, Minnesota. The NuMI beam is capable of running in forward or reverse horn current modes, creating a predominantly neutrino or antineutrino beam, respectively. For this analysis, a simultaneous near and far detector joint fit approach was utilized. Systematic uncertainties constrain the ND while the statistical uncertainties constrain the FD. For the upcoming analysis, we plan on including a dedicated neutrino-on-electron elastic scattering sample. This interaction is advantageous as it is subject to minimal cross-section uncertainties, which will help reduce degeneracies between other uncertainty categories. This thesis presents the sterile neutrino oscillation sensitivity results using 27.2e+20 POT in FHC mode, 12.6e+20 in RHC mode.

Haejun, Stella Oh [Cincinnati U.]↗
DOE OSTI2025

NOvA Sterile Neutrino Search with Additional Systematic Constraints

The NOvA experiment measures neutrino oscillations in a nearly pure muon neutrino beam. The neutral current (NC) and the muon neutrino charged current (CC) interaction disappearance are studied to search for active-to-sterile neutrino oscillations. NOvA consists of two functionally identical detectors placed 14 mrad off-axis of the Fermi National Accelerator Laboratory's NuMI beamline. The Near Detector (ND) is located 100 meters underground on-site at Fermilab, while the Far Detector (FD) is situated on the surface 810 kilometers away at Ash River, Minnesota. The NuMI beam is capable of operating in either forward or reverse horn current modes, producing predominantly neutrino or antineutrino beams, respectively. For this analysis, a simultaneous near and far detector joint fit approach was utilized. Systematic uncertainties constrain the ND while the statistical uncertainties constrain the FD. In addition to the dual baseline approach, the neutrino-on-electron elastic scattering sample was included. This interaction is advantageous as it is subject to minimal cross-section uncertainties, which will help reduce degeneracies between other uncertainty categories. This thesis presents the sterile neutrino oscillation sensitivity results using 27.2e+20 POT in FHC mode, 12.6e+20 in RHC mode, with the nu-on-e sample of 13.6e+20 POT in FHC.

Oh, Haejun [Cincinnati U.]↗
DOE OSTI2023

Neutralization Short-Circuiting with Weak Electrolytes Erodes the Efficiency of Bipolar Membranes

Bipolar membranes (BPMs) are critical components of a variety of electrochemical energy technologies. Many electrochemical applications require the use of buffers to maintain stable, nonextreme pH environments, yet the impact of buffers or weak acids/bases on the electrochemical behavior of BPMs remains poorly understood. Here, our data for a cell containing weak electrolytes is consistent with internal pH gradients within the anion exchange membrane (AEM) or cation exchange membrane (CEM) component of the BPM that form via ionic short-circuiting processes at open-circuit. Short-circuiting results from the coupling of co-ion crossover and parasitic neutralization and leads to buffering of the bipolar interface. This phenomenon, which we term neutralization short-circuiting, serves to erode BPM efficiency by attenuating the open-circuit membrane voltage and introducing parasitic reverse bias currents associated with weak acid/base dissociation at the interface. These findings establish a mechanistic basis for the operation of BPM cells in the presence of weak acid/base electrolytes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Neutron reconstruction via blips in liquid argon time projection chambers

Neutrons are important final-state particles in neutrino interactions, yet they are not considered or reconstructed in most current neutrino liquid argon time projection chamber (LArTPC) physics analyses. In this paper, we present a simulation-based proof-of-concept study of neutron reconstruction in a generic LArTPC detector. Leveraging isolated, MeV-scale energy deposits, or blips, from neutron inelastic scattering, and using realistic blip response from published experimental results, we demonstrate the capability to identify neutrons and to reconstruct the direction and energy of the final-state neutron system in sub-GeV neutrino interactions. We then explore how neutron-related blip attributes can be used to improve physics studies of neutrino interactions, such as enhancing neutrino-antineutrino separation in atmospheric neutrinos and reverse-horn-current beam neutrinos. This study provides an initial quantification of LArTPC neutron reconstruction capabilities, which we expect to improve with future advancements in blip reconstruction, identification, and classification algorithms, as well as the modeling of neutrons.

Morquecho, Miguel Hernandez [Univ. of Minnesota, M↗
DOE OSTI2024

Giant nonreciprocity of current-voltage characteristics of noncentrosymmetric superconductor–normal metal–superconductor junctions

Here we develop a theory of nonreciprocal current-voltage (I-U) characteristics in noncentrosymmetric superconductor-normal metal-superconductor junctions. We show that at small voltages the nonreciprocal features of the I-U characteristics can be expressed entirely in terms of the dependence of the nonreciprocal part of the quasiparticle density of states in the normal metal part of the junction on the order parameter phase difference chi across the junction. The amplitude of the nonreciprocity in this regime is proportional to the inelastic quasiparticle relaxation time $\tau_{in}$, and can be much larger than that in normal materials, where it is proportional to the elastic relaxation time $\tau_{el}$. At low bias the I-U characteristics possess additional symmetry not present in normal conductors; they remain invariant under simultaneous reversal of current, voltage, and the magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Mismatch losses in a PV system due to shortened strings

Numerous events may require intentional removal of one or more photovoltaic modules from a string, shortening the length of the string relative to others within the array, resulting in a string length mismatch. The impact of such a mismatch is not well understood either in measurable operational effects (voltage, current, power) or in the potential effects on long-term module health. It is impractical to solely approach this problem experimentally due to the size and complexity of arrays that may experience string length shortening. Here this work presents simulations, validated through limited field experiments on a two string array, providing a basis from which more complex arrays and scenarios may be explored. Refinement of the simulation achieves an overall error in IMPP for the nominal (S 1 ) and test strings (S 2 ) between the simulation and experimental values, through all test conditions, of +0.35 ± 1.46% and -0.36 ± 1.58% respectively. Shortening one of two strings by one module results in a power loss greater than the power contribution of the module alone (1.29 module equivalents); the impact increases through the maximum test case of a six module mismatch with a power loss equivalent to more than 11 modules. The impact of using string-end blocking diodes is presented with an emphasis at the array maximum power point and at open circuit. Implications are discussed for arrays of higher complexity.

14 SOLAR ENERGY↗
DOE OSTI2020

Carbon quantum dots interfacial modified graphene/silicon Schottky barrier solar cell

The two-dimensional thin film, as an effective interface modification layer to improve the power conversion efficiency (PCE) of graphene/silicon (Gr/Si) heterojunction solar cells has attracted extensive attention recently. However, the complicated manufacturing process and specialized equipment requirements impede its broad application. Herein, carbon quantum dots (CQDs) fabricated under the mild reaction condition was first time used to modify Gr/Si devices interface structure. The effects of CQDs size distributions and coating thickness on J-V characteristics and the energy band structure of Gr/CQDs/Si solar cells were systematically analyzed. The findings indicate that the PCE of resulting Gr/CQDs/Si solar cells could reach 9.97% when the thickness and sizes of CQDs interlayer are ~26 nm and 4–7 nm, without any chemical doping, which is 6.8-times PCE than that of virgin Gr/Si solar cells. The CQDs interlayer serves as both an electron blocking layer and hole transport layer to reduce the carrier recombination, leading to a lower reverse saturation current as well as a larger VOC then improved the device performance. The enhanced PCE shows that the CQDs species have the potential applications in a cost-effective photovoltaic device.

14 SOLAR ENERGY↗