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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS1985

Thermal stress cycling of GaAs solar cells

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Janousek, B. K.↗
NASA NTRS1986

A general numerical analysis program for the superconducting quasiparticle mixer

A user-oriented computer program SISCAP (SIS Computer Analysis Program) for analyzing SIS mixers is described. The program allows arbitrary impedance terminations to be specified at all LO harmonics and sideband frequencies. It is therefore able to treat a much more general class of SIS mixers than the widely used three-frequency analysis, for which the harmonics are assumed to be short-circuited. An additional program, GETCHI, provides the necessary input data to program SISCAP. The SISCAP program performs a nonlinear analysis to determine the SIS junction voltage waveform produced by the local oscillator. The quantum theory of mixing is used in its most general form, treating the large signal properties of the mixer in the time domain. A small signal linear analysis is then used to find the conversion loss and port impedances. The noise analysis includes thermal noise from the termination resistances and shot noise from the periodic LO current. Quantum noise is not considered. Many aspects of the program have been adequately verified and found accurate.

Hicks, R. G.↗
NASA NTRS1985

Heavy doping considerations and measurements in high-efficiency cells

Theoretical work on heavily doped silicon was described. Heavily doped polysilicon was used as a back-surface passivant replacing the usual back-surface field (BSF). Very good first results were achieved and there is the promise of a simple, low temperature deposition process. Short-circuit current-decay measurement methods were also covered.

Lindholm, F.↗
NASA NTRS1985

Amorphous-silicon module hot-spot testing

Hot spot heating occurs when cell short-circuit current is lower than string operating current. Amorphous cell hot spot are tested to develop the techniques required for performing reverse bias testing of amorphous cells. Also, to quantify the response of amorphous cells to reverse biasing. Guidelines are developed from testing for reducing hot spot susceptibility of amorphous modules and to develop a qualification test for hot spot testing of amorphous modules. It is concluded that amorphous cells undergo hot spot heating similarly to crystalline cells. Comparison of results obtained with submodules versus actual modules indicate heating levels lower in actual modules. Module design must address hot spot testing and hot spot qualification test conducted on modules showed no instabilities and minor cell erosion.

Gonzalez, C. C.↗
NASA NTRS1985

Dual-band microstrip antennas with monolithic reactive loading

The design and experimental measurement of a dual-band, monolithic microstrip antenna is presented. The structure utilises a short-circuited length of microstrip transmission line to provide reactive loading and, thereby, retains the low-profile characteristic of a normal microstrip patch radiator.

Davidson, S. E.↗
NASA NTRS1985

Generalized reciprocity theorem for semiconductor devices

A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.

Misiakos, K.↗
NASA NTRS1986

Dot junction solar cells

A design of solar cells with reduced junction area on the cell surface is investigated for reduction of saturation current and increase in open-circuit voltage. Equidiameter dot junctions distributed across the surface of the cell offer an efficient alternative, with variations in dot diameter and in the spacing between dots giving the required variations in the ratio of junction area to total surface area. A simplified analysis for short-circuit current and other cell parameters, which enables cell design optimization, is presented. Experimental solar-cell performance results, as functions of different area ratios, are presented and compared with the model. It is shown that saturation current reduction is possible for achieving efficiencies as high as 18 percent in flat-plate terrestrial applications.

Daud, T.↗
NASA NTRS1986

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Rohatgi, A.↗
NASA NTRS1987

Improving Solar Cells With Polycrystalline Silicon

In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.

Rohatgi, Ajeet↗
NASA NTRS1986

The role of oxygen in porous molybdenum electrodes for the alkali metal thermoelectric converter

A model for chemical reactions in porous molybdenum electrodes is presented which is based on thermochemical and kinetic data, known sodium-molybdenum-oxygen chemistry, X-ray diffraction analysis of molybdenum and molybdenum oxide electrodes, and the electrochemical behavior of the cell. Enhanced sodium transport through the electrode in its optimum performance state is found to be due to the high sodium ion conductivity of molten Na2MoO4 in the pores, and the electrical conduction to the molybdenum matrix by Na2Mo3O6. The decline of electrode performance is shown to be due to a combination of loss mechanisms for the Na-Mo-O compounds including reduction at short circuit, disproportionation of Na2Mo3O6 at open circuit, and the evaporation of Na2MoO4 at elevated temperature. It is suggested that operation of the cell at moderate voltage of about 0.5 V corresponding to maximum power may be a more stable condition for the porous electrode than open-circuit stand or short-circuit, where degradation reactions are heightened.

Williams, R. M.↗
NASA NTRS1985

Superstructures and multijunction cells for high efficiency energy conversion

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Wagner, M.↗
NASA NTRS1985

Performance of GaAs and silicon concentrator cells under 1 MeV electron irradiation

Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 1 MeV electrons at fluences up to 1 x 10 to the 15th electrons per square cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentrations were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4 mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS1985

Fabrication and analysis of dot junction silicon solar cells

A design of solar cells with reduced junction area on the cell surface is investigated for reduction of saturation current and increase in open-circuit voltage. Equidiameter dot junctions distributed across the surface of the cell offer an efficient alternative, with variations in dot diameter and in the spacing between dots giving the required variations in the ratio of junctions area to total surface area. A simplified analysis for short-circuit current and other cell parameters, which enables cell design optimization, is presented. Efficiencies beyond 18 percent are obtainable in flat-plate terrestrial applications. Experimental solar-cell performance results, as functions of different area ratios, and bulk doping are presented. It is shown that saturation current reduction and open-circuit voltage increase is obtained by reduced junction area.

Crotty, G. T.↗
NASA NTRS1986

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.↗
NASA NTRS1987

Further study of inversion layer MOS solar cells

A group of inversion layer MOS solar cells has been fabricated. The highest value of open-circuit voltage obtained for the cells is 0.568V. One of the cells has produced a short-circuit current of 79.6 mA and an open-circuit voltage of 0.54V. It is estimated that the actual area AMO efficiency of this cell is 6.6 percent with an assumed value of 0.75 for its fill factor. Efforts made for fabricating an IL/MOS cell with reasonable efficiencies are reported. Future work for 4 sq cm IL cells and 25 sq cm IL cells is discussed.

Ho, Fat Duen↗
NASA NTRS1986

Reliability of photovoltaic modules

In order to assess the reliability of photovoltaic modules, four categories of known array failure and degradation mechanisms are discussed, and target reliability allocations have been developed within each category based on the available technology and the life-cycle-cost requirements of future large-scale terrestrial applications. Cell-level failure mechanisms associated with open-circuiting or short-circuiting of individual solar cells generally arise from cell cracking or the fatigue of cell-to-cell interconnects. Power degradation mechanisms considered include gradual power loss in cells, light-induced effects, and module optical degradation. Module-level failure mechanisms and life-limiting wear-out mechanisms are also explored.

Ross, R. G., Jr.↗
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated pn junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0-micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, S. G.↗