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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Bend ductility of columbium alloys WC3015 and Cb752.

Bend angles for columbium-base alloys, WC3015 and Cb752, at temperatures between -300 F and +500 F are reported. WC3015 exhibited a bend transition temperature well below -100 F, but was severely embrittled by silicide coatings. Cb 752 exhibited a bend transition temperature below -300 F, and the silicide coating application did not influence bend angle of the substrate. However, coating failure on both alloys was observed at less than 60 deg bend, even at 500 F. The effect of electron beam welding and gas tungsten-arc welding on the properties of WC3015 and Cb752 are also reported. Both techniques are shown to produce a marked reduction in the bend angle of WC3015. Unlike WC3015, ductility is restored in Cb752 after a suitable postweld anneal. Microstructural and hardness tests results for both alloys are reported and discussed.

Tavassoli, A. A.↗
NASA NTRS1971

Degradation and reuse of radiative thermal protection system materials for the space shuttle

Three silicide coated columbium alloys and two cobalt alloys were subjected to identical simulated reentry profiling exposures in both static (controlled vacuum leak) and dynamic (hypersonic plasma shear) environments. Primary emphasis in the columbium alloy evaluation was on the Cb752 and C129Y alloys with a lesser amount on FS85. Commercial silicide coatings of the R512E and VH109 formulations were used. The coated specimens were intentionally defected to provide the types of coating flaws that are expected in service. Temperatures were profiled up to peak temperatures of either 2350 F or 2500 F for 15 minutes in each cycle.

Bartlett, E. S.↗
NASA NTRS1973

Outer skin protection of columbium Thermal Protection System (TPS) panels

A coated columbium alloy material system 0.04 centimeter thick was developed which provides for increased reliability to the load bearing character of the system in the event of physical damage to and loss of the exterior protective coating. The increased reliability to the load bearing columbium alloy (FS-85) was achieved by interposing an oxidation resistant columbium alloy (B-1) between the FS-85 alloy and a fused slurry silicide coating. The B-1 alloy was applied as a cladding to the FS-85 and the composite was fused slurry silicide coated. Results of material evaluation testing included cyclic oxidation testing of specimens with intentional coating defects, tensile testing of several material combinations exposed to reentry profile conditions, and emittance testing after cycling of up to 100 simulated reentries. The clad material, which was shown to provide greater reliability than unclad materials, holds significant promise for use in the thermal protection system of hypersonic reentry vehicles.

Culp, J. D.↗
NASA NTRS1974

Development and fabrication of improved Schottky power diodes, phases I and II

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Cordes, L. F.↗
NASA NTRS1975

Exploratory study on microanalysis of thin films by backscattering techniques

Solid phase epitaxial growth of Si layers was studied by backscattering spectrometry for controllable electrical characteristics. Samples were fabricated by vacuum deposition on a thin layer of Sb before deposition of the amorphous Si layer. Analysis of the resulting SPEG layer showed that Sb was present in the SPEG layer of Si. The characteristic of the SPEG layer against the Si substrate was rectifying. A scanning microprobe picture of a cleaved sample established the presence of a depletion region more than 1 micron below the surface. Hall effect data indicated that the SPEG layer was n-type, with average free carrier concentration of about 10 to the 19th power cm/3 and average electron mobility of about 40 sq cm/Vs. SPEG with Pd silicide or Ni silicide transport layers showed fast initial transient growth regimes with slower growth in the steady state regimes.

Mayer, J. W.↗
NASA NTRS1975

Development and fabrication of improved Schottky power diodes

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Cordes, L. F.↗
NASA NTRS1976

Interaction of metal layers with polycrystalline Si

Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

Nakamura, K.↗
NASA NTRS1977

Friction and wear properties of three hard refractory coatings applied by radiofrequency sputtering

The adherence, friction, and wear properties of thin hard refractory compound coatings applied to 440C bearing steel by radiofrequency sputtering were investigated. Friction and wear tests were done with nonconforming pin on disk specimens. The compounds examined were chromium carbide, molybdenum silicide, and titanium carbide. The adherence, friction, and wear were markedly improved by the application of a bias voltage to the bearing steel substrate during coating deposition. Analysis by X-ray photoelectron spectroscopy indicated that the improvement may be due to a reduction in impurities in bias deposited coatings. A fivefold reduction in oxygen concentration in MoSi2 coating by biasing was noted. Chromium carbide was not effective as an antiwear coating. Molybdenum silicide provided some reduction in both friction and wear. Titanium carbide exhibited excellent friction and antiwear properties at light loads. Plastic flow and transfer of the coating material onto the pin specimen appears to be important in achieving low friction and wear.

Brainard, W. A.↗
NASA NTRS1978

Metallization of Large Silicon Wafers

A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

Pryor, R. A.↗
NASA NTRS1980

XPS study of the chemical structure of the nickel/silicon interface

The chemical nature of the Ni/Si, Ni/Ni2Si, and Si/Ni2Si interfaces is studied using X-ray photoelectron spectroscopy. Two approaches are employed: (1) the Ni/silicide and Si/silicide interfaces are examined by dynamically monitoring the advancing reaction front during in situ growth and (2) as-deposited Ni/Si interfacial properties are analyzed by sequential evaporating monolayer Ni films on Si. These experiments show that the Ni/Ni2Si interface consists of a Ni-rich silicide phase, while the Si/Ni2Si interface has a transitional region that is correspondingly Si-rich silicide.

Grunthaner, P. J.↗
NASA NTRS1982

Silicon dendritic web material

The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

Meier, D. L.↗
NASA NTRS1982

Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems

Via a systematic study of the correlation between the core and valence level X-ray photoemission spectra, the nature of the chemical bonding and charge redistribution for bulk transition metal silicides has been examined. Particular emphasis is placed on Pt2Si and PtSi. It is observed that the strength of the metal (d)-silicon (p) interaction increases in the order Ni2Si, Pd2Si, Pt2Si. It is also observed that both the metal and silicon core lines shift to higher binding energy as the silicides are formed. The notion of charge redistribution for metallic bonds is invoked to explain these data.

Grunthaner, P. J.↗
NASA NTRS1984

Electronic and chemical structure of metal-silicon interfaces

This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

Grunthaner, P. J.↗
NASA NTRS1984

Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

Zhu, M. F.↗
NASA NTRS1990

Method of forming three-dimensional semiconductor structures

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of three-dimensional, exemplary electronic devices are disclosed.

Fathauer, Robert W.↗
NASA NTRS1991

Si/IrSi3 Schottky-Barrier Infrared Detectors

Si/IrSi or Si/IrSi3 Schottky-barrier detector fabricated by stoichiometric codeposition of Ir and Si on p Si substrate. Includes p+ substrate contact, silicide electrode, and n Si guard ring, which suppresses leakage around periphery of silicide electrode. Part of continuing effort to develop imaging arrays of Schottky-barrier detectors operating at far-infrared wavelengths.

Lin, True-Lon↗
NASA NTRS1992

Advanced liquid rockets

A program to substitute iridium coated rhenium for silicide coated niobium in thrust chamber fabrications is reviewed. The life limiting phenomena in each of these material systems is also reviewed. Coating cracking and spalling is not a problem with iridium-coated rhenium as in silicide-coated niobium. Use of the new material system enables an 800 K increase in thruster operating temperature from around 1700 K for niobium to 2500 K for rhenium. Specific impulse iridium-coated rhenium rockets is nominally 20 seconds higher than comparable niobium rockets in the 22 N class and nominally 10 seconds higher in the 440 N class.

Schneider, Steven J.↗
NASA NTRS1991

Ballistic-carrier spectroscopy of the CoSi2/Si interface

Ballistic-electron-emission microscopy and related ballistic-hole and carrier-scattering spectroscopies were used to investigate carrier transport in the epitaxial CoSi2/Si system. An unexpected degree of variation in interface transmission was observed despite the high crystal quality of the epitaxial silicide layer. Furthermore, clear evidence of the CoSi2 band structure was observed, which has a dramatic effect on interface transport. The major effect of the silicide band structure is to increase the interfacial barrier to electron transmission to a value in excess of the Schottky barrier height.

Kaiser, W. J.↗