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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,585 records · Page 88
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Hybrid Mesoporous Carbon/Copper Ferrite Electrode for Asymmetric Supercapacitors

Asymmetric supercapacitors (ASCs) with two dissimilar electrodes are known to exhibit relatively moderate energy and power densities. If electrodes derived from earth-abundant materials or renewable resources such as lignocellulosic biomass (LCB) are used for fabrication, energy storage systems are expected to become less expensive and more sustainable. Hybrid electrode materials have advantages such as higher surface area, better chemical stability, and superior energy density. This study reports on the synthesis of a novel hybrid electrode material containing porous carbon (POC) and copper ferrite, which is designated as POC@Cu-ferrite, and its electrochemical performance in ASC configuration. Corn stover derived hydrochar is utilized for the sol–gel synthesis of POC@Cu-ferrite hybrid material using earth-abundant Cu and Fe-based precursors. This material is characterized using X-ray diffraction (XRD), Raman spectroscopy, Brunauer–Emmett–Teller (BET) surface area analyzer, and scanning and transmission electron microscopy (SEM/TEM). As-synthesized Cu-ferrite is found to contain 89.2% CuFe 2 O 4 and 10.8% Fe 2 O 3 , whereas other phases such as Fe 3 O 4 , CuFeO 2 , and CuO are observed for the POC@Cu-ferrite. BET-specific surface area (SSA) and pore volume of POC@Cu-ferrite are observed as 1068 m 2 /g and 0.72 cm 3 /g, respectively. POC@Cu-ferrite hybrid electrode is used with POC opposite electrode to fabricate ASC, which is tested using Gamry G-300 potentiostat/galvanostat/ZRA to obtain cyclic voltammetry (CV) profiles and galvanostatic charge–discharge (GCD) plots. ASC is also prepared using Cu-ferrite and POC materials and its specific capacitance and stability are compared with ASCs prepared with POC@Cu-ferrite and POC or graphene nanoplatelets (GNPs) electrodes. POC@Cu-ferrite hybrid electrode is found to be superior with a 2-fold higher capacitance and significant electrochemical stability over 100 GCD cycles as compared to the Cu-ferrite electrode.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Triple Layer Tungsten Trioxide, Graphene, and Polyaniline Composite Films for Combined Energy Storage and Electrochromic Applications

Different polyaniline (PANI)-based hybrid films were successfully prepared by electro-polymerizing aniline monomers onto pre-spin-coated indium tin oxide (ITO) glass slides with WO 3 , graphene, or WO 3 /graphene films. Comparing with pristine PANI, the shifts of the characteristic peaks of PANI-based nanocomposites in UV-visible absorption spectra (UV-vis) and Fourier transform infrared spectroscopy (FT-IR) indicate the chemical interaction between the PANI matrix and the nanofillers, which is also confirmed by the scanning electron microscope (SEM) images. Corresponding coloration efficiencies were obtained for the WO 3 /PANI (40.42 cm 2 C -1 ), graphene/PANI (78.64 cm 2 C -1 ), and WO 3 /graphene/PANI (67.47 cm 2 C -1 ) films, higher than that of the pristine PANI film (29.4 cm 2 C -1 ), suggesting positive effects of the introduced nanofillers on the electrochromic performance. The areal capacitances of the films were observed to increase following the order as bare WO 3 < WO 3 /graphene < pristine PANI < WO 3 /PANI < graphene/PANI < WO 3 /graphene/PANI films from both the cyclic voltammogram (CV) and galvanostatic charge-discharge (GCD) results. The enhanced energy storage and electrochromic performances of the PANI-based nanocomposite films can be attributed to the capacitance contributions of the introduced nanofillers, increased PANI amount, and the rougher morphology due to the embedment of the nanofillers into the PANI matrix. This extraordinary energy storage and electrochromic performances of the WO 3 /graphene/PANI film make it a promising candidate for combined electrochromic and energy storage applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Implementing Ordinary Differential Equation Solvers in Rust Programming Language for Modeling Vehicle Powertrain Systems: Preprint

Efficient and accurate ordinary differential equation (ODE) solvers are necessary for powertrain and vehicle dynamics modeling. However, current commercial ODE solvers can be financially prohibitive, leading to a need for accessible, effective, open-source ODE solvers designed for powertrain modeling. Rust is a compiled programming language that has the potential to be used for fast and easy-to-use powertrain models, given its exceptional computational performance, robust package ecosystem, and short time required for modelers to become proficient. However, of the three commonly used (>3,000 downloads) packages in Rust with ODE solver capabilities, only one has more than four numerical methods implemented, and none are designed specifically for modeling physical systems. Therefore, the goal of the Differential Equation System Solver (DESS) was to implement accurate ODE solvers in Rust designed for the component-based problems often seen in powertrain modeling. DESS is a text-based software package that provides a flexible framework for building and solving systems of ODEs. This allows DESS to be included as a dependency for automotive powertrain models that require a variety of solvers and solver configurations. Seven explicit ODE solver methods have been implemented in DESS: Euler’s, Heun’s, midpoint, Ralston’s, classic Runge-Kutta, Bogacki-Shampine, and Cash-Karp. These represent five fixed-step methods and two adaptive-step methods. This paper shows that the solver implementations increase accuracy and computational efficiency compared to Euler's method when modeling a system of three thermal masses in Rust. DESS also includes features designed for modeling component-based physical systems. Users can define relationships between nodes in their system, which the package then translates into a system of equations, leading to simpler and more intuitive code. In the case of a three-thermal-mass system, the user can specify node thermal properties (e.g., thermal capacitance), how nodes are interconnected, and thermal conductance between nodes rather than providing a system of equations. The core contribution from this work is an open-source, text-based Rust package with ODE solvers for automotive powertrain modeling to support cost-free, fast, and accurate simulation.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Advanced Frost Sensor for HVAC Applications

Frost is a common problem in heating, ventilation, and air conditioning (HVAC) systems that can degrade their efficiencies, leading to excessive electricity consumption. Appropriate defrosting is therefore essential for heat pumps and refrigeration systems. However, these systems typically run the defrost cycle based on a predetermined time interval, a method that does not accurately identify the amount of frost and thus consume excessive electricity. To substantially improve defrosting initiation and termination, this paper describes development of a smart sensor based on a capacitive sensing technique that can quantify frost accumulation and difference between frost, ice, and water. The reported sensor adopts interdigitated comb electrodes and can be updated to a potential multifunctional sensor array for the enhancing identification of frost, ice, and water with the integrated measurement of surface temperature, frost capacitance, and resistance. The proposed frost sensor is potentially expected to have widespread applications in HVAC systems, including heat pumps, refrigerators, and commercial refrigeration systems.

Gao, Zhiming↗
DOE OSTI2013

High Quality, Low Cost Ammonothermal Bulk GaN Substrates

Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 mu m/h and rates in the 10-30 mu m/h range are routinely observed for all orientations. These values are 5-100x larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 x 10(5)-5 x 10(6) cm(-2). Dislocation densities below 10(4) cm(-2) are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers. (C) 2013 The Japan Society of Applied Physics

Ehrentraut, D↗
NASA NTRS1965

Thin-film resistors used in functional electronic blocks

Vapor-deposited thin-film resistors replace diffused resistors in R-C tank circuits in a solid state electronic block. This allows an optimum parallel capacitance to be obtained for circuit applications requiring a high resistance and a low capacitance.

Source record↗
NASA NTRS1970

Constant-amplitude RC oscillator

Sinusoidal oscillator has a frequency determined by resistance-capacitance /RC/ values of two charge control devices and a constant-amplitude voltage independent of frequency and RC values. RC elements provide either voltage-control, resistance-control, or capacitance-control of the frequency.

Kerwin, W. J.↗
NASA NTRS1972

Method for measuring static Young's modulus of tungsten to 1900 K

An instrument system was developed and tested to measure static Young's modulus of elasticity of refractory metals in tension at temperatures to 1900 K. The extensometer uses capacitance displacement sensors for measuring total elongation of a specimen and incorporates a unique high-resolution remote zero-adjusting mechanism. Details of a method for calibrating capacitance displacement sensors at temperatures to 800 K are included. The system was built to adapt to a vacuum furnace on a tensile machine and was tested on unalloyed tungsten rod specimens. The test results show that the system can measure the modulus of tungsten to 1900 K to within a precision of + or - 5 percent. The uncertainty of the measurement is estimated to be of the same order as the precision.

Harrigill, W. T., Jr.↗
NASA NTRS1972

Design, processing, and testing of lsi arrays for space station

The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comprise computer simulations that accurately predict performance; aluminum-gate COS/MOS devices including a 256-bit RAM with current sensing; and a silicon-gate process that is being used in the construction of a 256-bit RAM with voltage sensing. The Si-gate process increases speed by reducing the overlap capacitance between gate and source-drain, thus reducing the crossover capacitance and allowing shorter interconnections. The design of a Si-gate RAM, which is pin-for-pin compatible with an RCA bulk silicon COS/MOS memory (type TA 5974), is discussed in full. The Integrated Circuit Tester (ICT) is limited to dc evaluation, but the diagnostics and data collecting are under computer control. The Silicon-on-Sapphire Memory Evaluator (SOS-ME, previously called SOS Memory Exerciser) measures power supply drain and performs a minimum number of tests to establish operation of the memory devices. The Macrodata MD-100 is a microprogrammable tester which has capabilities of extensive testing at speeds up to 5 MHz. Beam-lead technology was successfully integrated with SOS technology to make a simple device with beam leads. This device and the scribing are discussed.

Lile, W. R.↗
NASA NTRS1972

Optical interferometry study of film formation in lubrication of sliding and/or rolling contacts

Seventeen fluids of widely varying physical properties and molecular structure were chosen for study. Film thickness and traction were measured simultaneously in point contacts by interferometry, from which a new theory of traction was proposed. Film thickness was measured in line contacts by interferometry and electrical capacitance to establish correlation between these two methods. An interferometric method for the absolute determination of refractive index in the contact zone was developed and applied to point contact fluid entrapments. Electrical capacitance was used to study the thickness and properties of the soft surface film which sometimes forms near a metal-fluid interface.

Stejskal, E. O.↗
NASA NTRS1973

Double time lag combustion instability model for bipropellant rocket engines

A bipropellant stability model is presented in which feed system inertance and capacitance are treated along with injection pressure drop and distinctly different propellant time lags. The model is essentially an extension of Crocco's and Cheng's monopropellant model to the bipropellant case assuming that the feed system inertance and capacitance along with the resistance are located at the injector. The neutral stability boundaries are computed in terms of these parameters to demonstrate the interaction among them.

Liu, C. K.↗
NASA NTRS1974

Surface-state spectra from thick-oxide MOS tunnel junctions

The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.

Ma, T. P.↗
NASA NTRS1975

An optimized output stage for MOS integrated circuits

An output device for optimizing propagation delay and minimizing chip area is described. An optimum means of tapering the output stages to minimize propagation delay is determined. The minimum delay is a function of the capacitive load to node ratio, the number of output stages, and the interstage propagation delay. The effects on area are also presented. A figure of merit which is a function of area and propagation time is defined which is of use in designing output stages. An optimum exists which can be considered the best compromise between further decreasing propagation delay and increasing chip area. Data are also presented which allow a designer to determine the minimum chip area once the capacitive load and the maximum allowable delay are known.

Lin, H. C.↗
NASA NTRS1976

IGFET/SOI fabrication method

Technique increases switching speeds, shortens channel length, reduces parasitic capacitance and gate overlap, and minimizes gate-to-channel capacitance. The p and n sections may be reversed, allowing fabrication of complementary devices.

Feltner, W. R.↗
NASA NTRS1976

Experimental investigation of a double-diffused MOS structure

Self-aligned polysilicon gate technology was applied to double-diffused MOS (DMOS) construction in a manner that retains processing simplicity and effectively eliminates parasitic overlap capacitance because of the self-aligning feature. Depletion mode load devices with the same dimensions as the DMOS transistors were integrated. The ratioless feature results in smaller dimension load devices, allowing for higher density integration with no increase in the processing complexity of standard MOS technology. A number of inverters connected as ring oscillators were used as a vehicle to test the performance and to verify the anticipated benefits. The propagation time-power dissipation product and process related parameters were measured and evaluated. This report includes (1) details of the process; (2) test data and design details for the DMOS transistor, the load device, the inverter, the ring oscillator, and a shift register with a novel tapered geometry for the output stages; and (3) an analytical treatment of the effect of the distributed silicon gate resistance and capacitance on the speed of DMOS transistors.

Lin, H. C.↗
NASA NTRS1977

Engine Hydraulic Stability

An analytical injector model was developed specifically to analyze combustion instability coupling between the injector hydraulics and the combustion process. This digital computer dynamic injector model will, for any imposed chamber of inlet pressure profile with a frequency ranging from 100 to 3000 Hz (minimum) accurately predict/calculate the instantaneous injector flowrates. The injector system is described in terms of which flow segments enter and leave each pressure node. For each flow segment, a resistance, line lengths, and areas are required as inputs (the line lengths and areas are used in determining inertance). For each pressure node, volume and acoustic velocity are required as inputs (volume and acoustic velocity determine capacitance). The geometric criteria for determining inertances of flow segments and capacitance of pressure nodes was set. Also, a technique was developed for analytically determining time averaged steady-state pressure drops and flowrates for every flow segment in an injector when such data is not known. These pressure drops and flowrates are then used in determining the linearized flow resistance for each line segment of flow.

Kesselring, R. C.↗
NASA NTRS1980

Measuring charge nonuniformity in MOS devices

Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.

Maserjian, J.↗
NASA NTRS1967

Dynamic capacitor having a peripherally driven element and system incorporating the same

A capacitor in which one plate or electrode element is vibratable to achieve a variation in capacitance is described. The capacitor includes two spaced stationary elements. The third element is supported at its center and in the form of a thin diaphragm which is vibrated at its inherent mechanical resonant frequency to achieve a corresponding variation in capacitance between one of the stationary elements and the vibrating diaphragm.

Goldstein, C. S.↗