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Effect of dielectric and high-resistivity barriers on the superconducting transition temperature of thin films.
Thin films deposited onto substrates cooled to low temperatures investigated for transition temperature in structures of superconductor- dielectric-superconductor
Effects of ultrathin oxides in conducting MIS structures on GaAs
Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.
Development of Low Cost Contacts to Silicon Solar Cells
Commercial electroless Cu solutions were used. Satisfactory adhesion (and fairly good cell performance) resulted from the use of thin layers of barrier metals such as Au, Cr or Pd. In these tests, photoresist masks were used to contact silicon P-type slices with diffused N+ and alloyed P+ surfaces; and electrolytic Cu solution was used to build up the contact thickness to provide good cell behavior. In addition some cells with evaporated Cr-Cu contacts were also made (along with evaporated Ti-Pd-Ag contacts as controls), with the intention of subjecting cells to gradually increasing heat-treatments, to determine whether Cu causes the cells to be inherently unstable.
Photonitride passivating coating for IC's
Increased reliability and simplified fabrication result from postassembly preencapsulation passivation process. Photonitride reaction chamber receives silane, ammonia, and mercury from mixing manifold to form passivating coating on IC's. Photonitride layer is barrier to moisture and penetration by mobile ions, and helps to protect IC devices subjected to severe mechanical handling or circuit repair procedures. Process is compatible with variety of wire-bonded lead frame assemblies. Advantages over plasma and sputtering deposition processes are low deposition temperature and zero stray radiation and ion levels.
Schottky-Barrier Photocell With Intermediate Metal Layer
Device output and durability increased. Photosensitive GaAs Schottkybarrier device modified by addition of intermediate layer of refractory or alkaline earth metal. Photovoltaic cells and photosensors made with new design put out higher short-circuit currents and better able to withstand rigors of handling and connection to other circuit components.
Effect of hot electrons on the polar wind
A semikinetic model is used to describe the steady state collisionless flow of H(+), O(+), and electrons along diverging geomagnetic field lines in the high-latitude topside ionosphere. The effect that hot electron populations have on the polar wind is emphasized. Several such populations are considered, including the polar rain, polar showers, and polar squall. Hot electron densities and temperatures are calculated from the characteristic energy and flux measurements. The results indicate that the hot/cold electron temperature ratio varies from 10 to 10,000 and that the hot/cold electron density ratio varies from 0.001 to 0.1 at the baropause. For higher hot electron temperatures and a greater percentage of hot electrons, there is a discontinuity in the kinetic solution, which indicates the presence of a sharp transition corresponding to a contact surface between the hot and cold electrons. Along this surface, a double-layer potential barrier exists which reflects the cold ionospheric electrons and prevents their penetrations to higher altitudes.
A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots
Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.
NASA Tech Briefs, July 2008
Topics covered include: Torque Sensor Based on Tunnel-Diode Oscillator; Shaft-Angle Sensor Based on Tunnel-Diode Oscillator; Ground Facility for Vicarious Calibration of Skyborne Sensors; Optical Pressure-Temperature Sensor for a Combustion Chamber; Impact-Locator Sensor Panels; Low-Loss Waveguides for Terahertz Frequencies; MEMS/ECD Method for Making Bi(2-x)Sb(x)Te3 Thermoelectric Devices; Low-Temperature Supercapacitors; Making a Back-Illuminated Imager with Back-Side Contact and Alignment Markers; Compact, Single-Stage MMIC InP HEMT Amplifier; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Improved Sand-Compaction Method for Lost-Foam Metal Casting; Improved Probe for Evaluating Compaction of Mold Sand; Polymer-Based Composite Catholytes for Li Thin-Film Cells; Using ALD To Bond CNTs to Substrates and Matrices; Alternating-Composition Layered Ceramic Barrier Coatings; Variable-Structure Control of a Model Glider Airplane; Axial Halbach Magnetic Bearings; Compact, Non-Pneumatic Rock-Powder Samplers; Biochips Containing Arrays of Carbon-Nanotube Electrodes; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Neon as a Buffer Gas for a Mercury-Ion Clock; Miniature Incandescent Lamps as Fiber-Optic Light Sources; Bidirectional Pressure-Regulator System; and Prism Window for Optical Alignment. Single-Grid-Pair Fourier Telescope for Imaging in Hard-X Rays and gamma Rays Range-Gated Metrology with Compact Optical Head Lossless, Multi-Spectral Data Compressor for Improved Compression for Pushbroom-Typetruments.
Carrier Dynamics in Quantum Dot Structures with Different Interdot Spacings
The time of carrier transfer into a dot decreases with increasing dot density as well as with photoexcited carrier denstiy and temperature. It is suggested that potential barriers at the barrier, wetting layer and quantum dot interfaces hinder the carrier capture in low-density quantum dot structures.
GaAs Schottky barrier photo-responsive device and method of fabrication
A gallium arsenide photo-responsive device is provided with an intermediate, transparent layer of a refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer and a noble metal Schottky barrier layer. The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer is formed to cover the epitaxial layer, and the transparent metal layer followed by the noble metal layer are deposited upon the oxide layer. An interdigitated ohmic contact is then formed upon the noble metal layer.
Effect of an Opaque Reflecting Layer on the Thermal Behavior of a Thermal Barrier Coating
A parametric study using a two-flux approximation of the radiative transfer equation was performed to examine the effects of an opaque reflective layer on the thermal behavior of a typical semitransparent thermal barrier coating on an opaque substrate. Some ceramic materials are semitransparent in the wavelength ranges where thermal radiation is important. Even with an opaque layer on each side of the semitransparent thermal barrier coating, scattering and absorption can have an effect on the heat transfer. In this work, a thermal barrier coating that is semitransparent up to a wavelength of 5 micrometers is considered. Above 5 micrometers wavelength, the thermal barrier coating is opaque. The absorption and scattering coefficient of the thermal barrier was varied. The thermal behavior of the thermal barrier coating with an opaque reflective layer is compared to a thermal barrier coating without the reflective layer. For a thicker thermal barrier coating with lower convective loading, which would be typical of a combustor liner, a reflective layer can significantly decrease the temperature in the thermal barrier coating and substrate if the scattering is weak or moderate and for strong scattering if the absorption is large. The layer without the reflective coating can be about as effective as the layer with the reflective coating if the absorption is small and the scattering strong. For low absorption, some temperatures in the thermal barrier coating system can be slightly higher with the reflective layer. For a thin thermal barrier coating with high convective loading, which would be typical of a blade or vane that sees the hot sections of the combustor, the reflective layer is not as effective. The reflective layer reduces the surface temperature of the reflective layer for all conditions considered. For weak and moderate scattering, the temperature of the TBC-substrate interface is reduced but for strong scattering, the temperature of the substrate is increased slightly.
Modeling of the Influence of Thermally Grown Oxide (TGO) Layers on the Driving Forces in Environmental Barrier Coating Systems
Environmental barrier coatings (EBC) are an enabling technology for the successful application of ceramic matrix composites (CMCs) in air-breathing gas turbine engines. EBCs are susceptible to several failure modes including oxidation/delamination, recession, chemical attack and dissolution, thermomechanical degradation, erosion, and foreign object impact damage in a combustion environment. Spallation of environmental barrier coating (EBC), induced by a thermally grown oxide (TGO) layer, is a key EBC failure mode. The TGO layer, resulting from steam oxidation, grows either from a silicon bond coat layer (if present) or from a silicon carbide (SiC) based substrate itself. The TGO layer evolves (i.e., thickness increases with time) as water vapor and oxygen gradually diffuse through the EBC, and the EBC spalls off once the TGO layer reaches some critical thickness. The critical thickness of the TGO layer for failure is in the range of 20-30 microns, with the actual value depending upon exposure temperature, microstructure, etc. Current work at NASA Glenn Research Center, under the Transformative Tools and Technology (TTT) subproject is aimed at addressing associated failure modes in EBC systems and developing robust analysis tools to aid in the design/analysis of these systems. The objective of the current work is to conduct a sensitivity study to examine the influence of uniformly and non-uniformly grown oxide layers on the associated driving forces leading to spallation of the EBC when subjected to isothermal loading. The effect of damage in the TGO layer on the resulting stress states is also assessed both in uniform and non-uniform TGO layers.
Emittance and absorptance of NASA ceramic thermal barrier coating system
Spectral emittance measurements were made on a two-layer ceramic thermal barrier coating system consisting of a metal substrate, a NiCrAly bond coating and a yttria-stabilized zirconia ceramic coating. Spectral emittance data were obtained for the coating system at temperatures of 300 to 1590 K, ceramic thickness of zero to 0.076 centimeter, and wavelengths of 0.4 to 14.6 micrometers. The data were transformed into total hemispherical emittance values and correlated with respect to ceramic coating thickness and temperature using multiple regression curve fitting techniques. The results show that the ceramic thermal barrier coating system is highly reflective and significantly reduces radiation heat loads on cooled gas turbine engine components. Calculation of the radiant heat transfer within the nonisothermal, translucent ceramic coating material shows that the gas-side ceramic coating surface temperature can be used in heat transfer analysis of radiation heat loads on the coating system.
Summary of NASA research on thermal-barrier coatings
This paper summarizes the work conducted at the NASA Lewis Research Center to evolve and evaluate a two-layer, thermal-barrier coating system. A durable, two-layer, plasma-sprayed coating consisting of a ceramic layer over a metallic layer was developed that has the potential of insulating hot engine parts and thereby reducing metal temperatures and coolant flow requirements and/or permitting use of less costly and complex cooling configurations and materials. The investigations evaluated the reflective and insulative capability, microstructure, and durability of several coating materials on flat metal specimens, a combustor liner, and turbine vanes and blades. In addition, the effect on the aerodynamic performance of a coated turbine vane was measured. The tests were conducted in furnaces, cascades, hot-gas rigs, an engine combustor, and a research turbojet engine. Included also are summaries of current research related to the coating and potential applications for the coating.
Theory of tunneling between two-dimensional electron layers driven by spin pumping: Adiabatic regime and beyond
Tunneling spectroscopy between parallel two-dimensional (2D) electronic systems provides a powerful method to probe the underlying electronic properties by measuring tunneling conductance. Here, in this work, we present a theoretical framework for spin transport in 2D-to-2D tunneling systems, driven by spin pumping. This theory applies to a vertical heterostructure where two layers of metallic 2D electron systems are separated by an insulating barrier, with one layer exchange coupled to a magnetic layer driven at resonance. Utilizing a nonperturbative Floquet-Keldysh formalism, we derive general expressions for the tunneling spin and charge currents across a broad range of driving frequencies, extending beyond the traditional adiabatic pumping regime. At low frequencies, we obtain analytical results that recover the known behaviors in the adiabatic regime. However, at higher frequencies, our numerical findings reveal significant deviations in the dependence of spin and charge currents on both frequency and precession angle. This work offers fresh insights into the role of magnetization dynamics in tunneling transport, opening up new avenues for exploring nonadiabatic spin pumping phenomena.
Cracking the code of multi-layer films to promote circularity in single-use plastic packaging
Multi-layer film packaging (MLF) revolutionized food preservation by combining diverse material layers to optimize barrier properties, mechanical strength, and shelf-life. These materials are essential for transporting perishables across various climates and allow for access to fresh goods in “food deserts”, but they pose significant recycling challenges due to their structural complexity. This perspective examines key structure-property relationships governing barrier performance and highlights innovations in material design. We explore how machine learning can predict performance metrics and propose recyclable alternatives, integrating data-driven approaches with material science insights. By challenging the status quo of MLF design, we advocate for circularity in food packaging, inspiring innovation at the intersection of sustainability, material science, and artificial intelligence.
Synthesis pathways to thin films of stable layered nitrides
Controlled synthesis of metastable materials away from equilibrium is of interest in materials chemistry. Thin-film deposition methods with rapid condensation of vapour precursors can readily synthesize metastable phases but often struggle to yield the thermodynamic ground state. Growing thermodynamically stable structures using kinetically limited synthesis methods is important for practical applications in electronics and energy conversion. Here, in this study, we reveal a synthesis pathway to thermodynamically stable, ordered layered ternary nitride materials, and discuss why disordered metastable intermediate phases tend to form. We show that starting from elemental vapour precursors leads to a 3D long-range-disordered MgMoN 2 thin-film metastable intermediate structure, with a layered short-range order that has a low-energy transformation barrier to the layered 2D-like stable structure. This synthesis approach is extended to ScTaN 2 , MgWN 2 and MgTa 2 N 3 , and may lead to the synthesis of other layered nitride thin films with unique semiconducting and quantum properties.