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At least 163 records · Page 9

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NASA NTRS1986

Capacitor-type micrometeoroid detectors

The metal oxide semiconductor (MOS) capacitor micrometeroid detector consists of a thin dielectric capacitor fabricated on a silicon wafer. In operation, the device is charged to a voltage level sufficiently near breakdown that micrometeoroid impacts will cause dielectric deformation or heating and subsequent arc-over at the point of impact. Each detector is capable of recording multiple impacts because of the self-healing characteristics of the device. Support instrumentation requirements consist of a voltage source and pulse counters that monitor the pulse of recharging current following every impact. An investigation has been conducted in which 0.5 to 5 micron diameter carbonized iron spheres traveling at velocities of 4 to 10 Km/sec were impacted on to detectors with either a dielectric thickness of 0.4 or 1.0 micron. This study demonstrated that an ion microprobe tuned to sufficiently high resolution can detect Fe remaining on the detector after the impact. Furthermore, it is also possible to resolve Fe ion images free of mass interferences from Si, for example, giving its spatial distribution after impact. Specifically this technique has shown that significant amounts of impacting particles remain in the crater and near it which can be analyzed for isotopic content. Further testing and calibration could lead to quantitive analysis. This study has shown that the capacitor type micrometeroid detector is capable of not only time and flux measurements but can also be used for isotopic analysis.

Wortman, J. J.↗

NASA NTRS1989

Low-Inductance Capacitor For Low Temperatures

Planar capacitor made on epoxy/fiberglass printed-circuit board. Planar design and flat copper plates ensure low inductance and low series resistance. Planar construction minimized effects of thermal contraction, and epoxy/fiberglass substrate ensured high breakdown voltage. Design is simple, and this type of capacitor easy for any printed-circuit-board facility to fabricate. Design suitable for any small-capacitance, high-voltage capacitor, whether operating at low or high temperature.

Rhodes, David B.↗

NASA NTRS1991

Ferroelectric Memory Capacitors For Neural Networks

Thin-film ferroelectric capacitors proposed as nonvolatile analog memory devices. Intended primarily for use as synaptic connections in electronic neural networks. Connection strengths (synaptic weights) stored as nonlinear remanent polarizations of ferroelectric films. Ferroelectric memory and interrogation capacitors combined into memory devices in vertical or lateral configurations. Photoconductive layer modulated by light provides variable resistance to alter bias signal applied to memory capacitor. Features include nondestructive readout, simplicity, and resistance to ionizing radiation. Interrogated without destroying stored analog data. Also amenable to very-large-scale integration. Allows use of ac coupling, eliminating errors caused by dc offsets in amplifier circuits of neural networks.

Thakoor, Sarita↗

NASA NTRS1990

MIS capacitor studies on silicon carbide single crystals

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Kopanski, J. J.↗

NASA NTRS1991

Electrical characterization of glass, teflon, and tantalum capacitors at high temperatures

Dielectric materials and electrical components and devices employed in radiation fields and the space environment are often exposed to elevated temperatures among other things. Therefore, these systems must withstand the high temperature exposure while still providing good electrical and other functional properties. Experiments were carried out to evaluate glass, teflon, and tantalum capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature up to 200 C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. The DC leakage current measurements were also performed in a temperature range from 20 to 200 C. The obtained results are discussed and conclusions are made concerning the suitability of the capacitors investigated for high temperature applications.

Hammoud, A. N.↗

NASA NTRS1992

Electrical properties of teflon and ceramic capacitors at high temperatures

Space power systems and components are often required to operate efficiently and reliably in harsh environments where stresses, such as high temperature, are encountered. These systems must, therefore, withstand exposure to high temperature while still providing good electrical and other functional properties. Experiments were carried out to evaluate Teflon and ceramic capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature, up to 200 C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed in a temperature range from 25 to 200 C. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors studied for high temperature applications.

Hammoud, A. N.↗

NASA NTRS1991

Comparison of converter topologies for charging capacitors used in pulsed load applications

The authors present a qualitative comparison of different power converter topologies which may be utilized for charging capacitors in pulsed power applications requiring voltages greater than 1 kV. The operation of the converters in capacitor charging applications is described, and relevant advantages are presented. All of the converters except one may be classified in the high-frequency switching category. One of the benefits from high-frequency operation is a reduction in size and weight. The other converter discussed is a member of the command resonant changing category. The authors first describe a boost circuit which functions as a command resonant charging circuit and utilizes a single pulse of current to charge the capacitor. The discussion of high-frequency converters begins with the flyback and Ward converters. Then, the series, parallel, and series/parallel resonant converters are examined.

Nelms, R. M.↗

NASA NTRS1992

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors comprising a ferroelectric film sandwiched between electrodes for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode. The anneal is done so as to form the interface between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550 to 600 C for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the nonswitching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the nonswitching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗

NASA NTRS1994

Automated System Tests Ferroelectric Capacitors

Polarization-switching parameters measured under computer control. Ferroelectric-capacitor-testing system applies voltage pulses and measures responses of ferroelectric capacitor to determine write; "time dependence of polarization," polarization-retention and fatigue characteristics of capacitor. Highly integrated setup quite flexible, versatile, and interactive, and allows convenient computer storage and analysis of data.

Lakata, Mark↗

NASA NTRS1993

Limiting factors for carbon based chemical double layer capacitors

The Chemical Double Layer (CDL) capacitor improves energy storage density dramatically when compared with conventional electrolytic capacitors. When compared to batteries, the CDL Capacitor is much less energy dense; however, the power density is orders of magnitude better. As a result, CDL-battery combinations present an interesting pulse power system with many potential applications. Due to the nature of the CDL it is inherently a low voltage device. The applications of the CDL can be tailored to auxiliary energy and burst mode storages which require fast charge/discharge cycles. Typical of the applications envisioned are power system backup, directed energy weapons concepts, electric automobiles, and electric actuators. In this paper, we will discuss some of the general characteristics of carbon-based CDL technology describing the structure, performance parameters, and methods of construction. Further, analytical and experimental results which define the state of the art are presented and described in terms of impact on applications.

Rose, M. Frank↗

NASA NTRS1996

Low Temperature Characterization of Ceramic and Film Power Capacitors

Among the key requirements for advanced electronic systems is the ability to withstand harsh environments while maintaining reliable and efficient operation. Exposures to low temperature as well as high temperature constitute such stresses. Applications where low temperatures are encountered include deep space missions, medical imaging equipment, and cryogenic instrumentation. Efforts were taken to design and develop power capacitors capable of wide temperature operation. In this work, ceramic and film power capacitors were developed and characterized as a function of temperature from 20 C to -185 C in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The manuscript presents the results that indicate good operational characteristic behavior and stability of the components tested at low temperatures.

Hammoud, Ahmad↗

NASA NTRS1998

Evaluation of Capacitors at Cryogenic Temperatures for Space Applications

Advanced electronic systems designed for use in planetary exploration missions must operate efficiently and reliably under the extreme cold temperatures of deep space environment. In addition, spacecraft power electronics capable of cold temperature operation will greatly simplify the thermal management system by eliminating the need for heating units and associated equipment and thereby reduce the size and weight of the overall power system. In this study, film, mica, solid tantalum and electric double layer capacitors were evaluated as a function of temperature from room to liquid nitrogen in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for low temperature applications.

Patterson, Richard L.↗

NASA NTRS1999

TAL Performance and Mission Analysis in a CDL Capacitor Powered Direct-Drive Configuration

The goals of this research are (1) to prove the concept feasibility of a direct-drive electric propulsion system, and (2) to evaluate the performance and characteristics of a Russian TAL (Thruster with Anode Layer) operating in a long-pulse mode, powered by a capacitor-based power source developed at Space Power Institute. The TAL, designated D-55, is characterized by an external acceleration zone and is powered by a unique chemical double layer (CDL) capacitor bank with a capacitance of 4 F at a charge voltage of 400 V. Performance testing of this power supply on the TAL was conducted at NASA Lewis Research Center in Cleveland, OH. Direct thrust measurements of the TAL were obtained at CDL power levels ranging from 450 to 1750 W. The specific impulse encompassed a range from 1150 s to 2200 s, yielding thruster system efficiencies between 50 and 60%. Preliminary mission analysis of the CDL direct-drive concept and other electric propulsion options was performed for the ORACLE spacecraft in 6am/6pm and 12am/12pm, 300 km sun-synchronous orbits. The direct-drive option was competitive with the other systems by increasing available net mass between 5 and 42% and reducing two-year system wet mass between 18 and 63%. Overall, the electric propulsion power requirements for the satellite solar array were reduced between 57 and 91% depending oil the orbit evaluated The direct-drive, CDL capacitor-based concept in electric propulsion thus promises to be a highly-efficient, viable alternative for satellite operations in specific near-Earth missions.

Hrbud, Ivana↗

NASA NTRS2001

Apparatus and Method for Generating Thrust Using a Two Dimensional, Asymmetrical Capacitor Module

A capacitor module system is provided for creating a thrust force. The system includes a capacitor module provided with a first conductive element having a cylindrical geometry. The first conductive element can be a hollow cylinder or a solid cylinder. The capacitor module also includes a second conductive element axially spaced from the first conductive element and of smaller axial extent. The second conductive element can be a flat disk, a dome, or a conductive tip at the end of a dielectric rod. A dielectric element is disposed between the first conductive element and the second conductive element. The system also includes a high voltage source having first and second terminals connected respectively to the first and second conductive elements. The high voltage source applies a high voltage to the conductive elements of sufficient value to create a thrust force on the module inducing movement thereof.

Jonathan W Campbell↗

NASA NTRS2003

MB C220 Centering System Capacitor Fire

A detailed analysis of the MB C220 Centering System Capacitor Fire is presented. The topics include: 1) Description of Incident/Mishap; 2) System Block Diagram; 3) Fault Tree Analysis; 4) Inspection and Repair of Cabinet; 5) Discussions with GSFC Experts; 6) Electrical Measurements of Capacitors; 7) Other Research; 8) Discussions with Capacitor Manufacturers; 9) Findings/Root Cause; and 10) Recommendations. This paper is in viewgraph form.

Worth, Daniel B.↗

NASA NTRS2004

Cylindrical Asymmetrical Capacitor Devices for Space Applications

An asymmetrical capacitor system is provided which creates a thrust force. The system is adapted for use in space applications and includes a capacitor device provided with a first conductive element and a second conductive element axially spaced from the first conductive element and of smaller axial extent. A shroud supplied with gas surrounds the capacitor device. The second conductive element can be a wire ring or mesh mounted on dielectric support posts affixed to a dielectric member which separates the conductive elements or a wire or mesh annulus surrounding a barrel-shaped dielectric member on which the h t element is also mounted. A high voltage source is connected across the conductive elements and applies a high voltage to the conductive elements of sufficient value to create a thrust force on the system inducing movement thereof.

Jonathan W Campbell↗

NASA NTRS2003

Response of Solid He-4 to External Stress: Interdigital Capacitor Solid Level Detector and Optical Interferometer

Two experiments are being conducted to observe the liquid/solid interface of He-4 near 1 K. Interesting instabilities are expected to occur when the solid is non-hydrostatically stressed. (1)A compact interdigital capacitor is used as a level detector to observe solid He-4 to which stresses are applied externally. The capacitor consists of 38 interlaced 50 m wide and 3.8 mm long gold films separated by 50 m and deposited onto a 5 mm by 5 mm sapphire substrate. The capacitor is placed on one flat end wall of a cylindrical chamber (xx mm diameter and xx mm long). The solid is grown to a known height and a stress is applied by a tubular PZT along the cylindrical axis. The observed small change in height of the solid at the wall is linearly proportional to the applied stress. The solid height decreases under compressive stress but does not change under tensile stress. The response of the solid on compressive stress is consistent with the expected quadratic dependence on strain. (2)Interferometric techniques are being developed for observing the solid He-4 surface profile. A laser light source is brought into the low temperature region via single mode optical fiber. The interference pattern is transmitted back out of the low temperature apparatus via optical fiber bundle. The solid He-4 growth chamber will be equipped with two PZT's such that stress can be applied from orthogonal directions. Orthogonally applied stress is expected to induce surface instability with island-like deformation on a grid pattern. Apparatus design and progress of its construction are described.

Fay, J.↗

NASA NTRS2005

Practical Active Capacitor Filter

A method and apparatus is described that filters an electrical signal. The filtering uses a capacitor multiplier circuit where the capacitor multiplier circuit uses at least one amplifier circuit and at least one capacitor. A filtered electrical signal results from a direct connection from an output of the at least one amplifier circuit.

Shuler, Robert L., Jr.↗