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At least 163 records · Page 9

Spectrophotometric observations of comet P/Giacobini-Zinner

Spectroscopic observations of the Giacobini-Zinner comet were performed on March 20, June 20 and 21, September 11, and October 19, 1985. The September observations were performed at perihelion, exactly at the time of the International Cometary Explorer (ICE) encounter with the comet. The March and June observations were obtained with an intensified image dissector scanner (IIDS) on the 2.1-meter Kitt Peak telescope and the September and the October observations were obtained with a charge-coupled device (CCD) on the 4-meter Kitt Peak telescope. The nucleus spectra from these observations are presented.

Konno, I.↗

Tidal distortions in pairs of early-type galaxies

The authors are conducting an imaging survey of pairs of elliptical galaxies which has already produced interesting results. Some pairs present a common pattern of distortion interpreted in terms of tidal effects (Davoust and Prugniel, 1988; Prugniel et al., 1989). Other examples drawn from the literature (Borne and Hoessel, 1988; Colina and Perez-Fournon, 1990) share the same morphology. New cases and lists of the characteristics of 24 such systems. The authors' pairs are drawn from a sample of binary and multiple galaxies which has in turn been extracted from the CGCG, UGC (Nilson, 1973) and VV (Vorontsov-Velyaminov, 1959) catalogues. This sample includes that of Karachentsev (1972). It contains 1800 pairs, among which 700 are S - S or mixed morphology pairs. The authors are working on the remainder to produce a sample of close physical pairs of elliptical galaxies (they also include bulge dominated SO's since the morphological discrimination from ellipticals is often ambiguous, in particular for interacting galaxies). One of the interests of this work is to provide a sample selected on purely optical criteria, at variance with other works (e.g., Valentijn and Casertano, 1988). This will allow statistical studies of non-optical properties of these pairs (in particular radio emission). The authors have so far obtained charge-coupled device (CCD) images of 125 pairs with a 2m telescope and velocities' differences of 78 pairs were obtained using the 1.93 meter telescope of Observatoire de Haute Provence and from the literature. One is an optical pair (VV 190). Eighteen of our pairs present the morphological effect described in Davoust and Prugniel (1988): the external parts of each member are stretched in opposite senses in a direction rougly perpendicular to the pair axis. The proportion of 15 plus or minus 4 percent distorted pairs confirms previous estimates. Except for a few cases involving flattened galaxies with nearly aligned major axes which deserve careful detailed analysis (Prugniel, 1989), the apparent distortions do correspond to physical distortions. We have searched the literature for isophote maps showing this effect. In the survey of radio galaxies by Colina and Perez-Fournon (1990), 7 out of 20 pairs show this characteristic distortion.

Prugniel, Philippe↗

Luminescent barometry in wind tunnels

A flexible and relatively inexpensive method and apparatus are described for continuous pressure mapping of aerodynamic surfaces using photoluminescence and imaging techniques. Platinum octaethylporphyrin (PtOEP) has a phosphorescence known to be quenched by oxygen. When dissolved in a silicone matrix, PtOEP may be distributed over a surface as a thin, uniform film. When the film is irradiated with ultraviolet light, the luminescence intensity provides a readily detectable, qualitative surface flow visualization. Moreover, since the luminescence intensity is found to be inversely proportional to the partial pressure of oxygen, a quantitative measure of pressure change may be obtained using a silicon target vidicon or a charge-coupled device video sensor to measure intensity. Luminescent images are captured by a commercial frame buffer board. Images taken in wind tunnels during airflow are ratioed to images taken under ambient 'wind-off' conditions. The resulting intensity ratio information is converted to pressure using calibration curves of I0/I vs p/p0, where I0 is the intensity at ambient pressure p0 and I is the intensity at any other pressure p.

Kavandi, Janet↗

GaAs CCD readout for engineered bandgap detectors

GaAs and related heterostructure charge-coupled devices (CCDs) for detector array readout multiplexer applications are described. Features of resistive-gate CCDs are compared with capacitive-gate CCDs for this application. Design examples of GaAs CCD readouts for linear and two-dimensional detector arrays with different detection methods and signal coupling schemes are described. Recent progress in two-dimensional electron gas (2DEG) Al(0.3)Ga(0.7)As/GaAs resistive-gate CCDs is also presented. The 2DEG resistive-gate CCD conventional buried-channel GaAs CCD.

Song, J.-I.↗

Effects of transistor geometry on CCD output sensitivity

This paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate.

Kim, H.↗

Integrated optics in an electrically scanned imaging Fourier transform spectrometer

An efficient, lightweight and stable, Fourier transform spectrometer was developed. The mechanical slide mechanism needed to create a path difference was eliminated by the use of retro-reflecting mirrors in a monolithic interferometer assembly in which the mirrors are not at 90 degrees to the propagation vector of the radiation, but rather at a small angle. The resulting plane wave fronts create a double-sided inteferogram of the source irradiance distribution which is detected by a charge-coupled device image sensor array. The position of each CCD pixel in the array is an indication of the path difference between the two retro-reflecting mirrors in the monolithic optical structure. The Fourier transform of the signals generated by the image sensor provide the spectral irradiance distribution of the source. For imaging, the interferometer assembly scans the source of irradiation by moving the entire instrument, such as would occur if it was fixedly mounted to a moving platform, i.e., a spacecraft. During scanning, the entrace slot to the monolithic optical structure sends different pixels to corresponding interferograms detected by adjacent columns of pixels of the image sensor.

Breckinridge, James B.↗

Charge Trap Analysis in a SENSEI Skipper-CCD: Understanding Low-Energy Backgrounds in Rare-Event Searches

Skipper Charge-Coupled Devices (Skipper-CCDs) are ultra-low-threshold detectors capable of detecting energy deposits in silicon at the eV scale. Increasingly used in rare-event searches, one of the major challenges in these experiments is mitigating low-energy backgrounds. In this work, we present results on trap characterization in a silicon Skipper-CCD produced in the same fabrication run as the SENSEI experiment at SNOLAB. Lattice defects contribute to backgrounds in rare-event searches through single-electron charge trapping. To investigate this, we employ the charge-pumping technique at different temperatures to identify dipoles produced by traps in the CCD channel. We fully characterize a fraction of these traps and use this information to extrapolate their contribution to the single-electron background in SENSEI. We find that this subpopulation of traps does not contribute significantly but more work is needed to assess the impact of the traps that can not be characterized.

Brusco, Agustin [Buenos Aires U.]↗

MAS-CCD: New technique for measuring low-level charge content based on the multiple amplifier architecture

Low-noise detectors are a key technology for the next generation of astronomical instruments aimed at spectroscopy of faint objects and the search for exoplanets. In this context, the multiple-amplifier sensing charge-coupled device (MAS-CCD) emerges as a promising technology for future scientific instruments. A critical parameter affecting the performance of these devices is spurious charge, produced by the clocking of the gates. Its measurement is typically challenging with existing methods. In practice, the optimization of this parameter often relies on empirical procedures that require significant time and careful consideration of the trade-off with full-well capacity. In this work, we present a new technique to estimate spurious charge based on covariance analysis of the output amplifiers of the MAS-CCD, which measures the same charge packet in different amplifiers at different times. The method enables fast and precise measurements of spurious charge under operating conditions where conventional approaches are difficult to apply. We develop the theoretical framework of the method and validate the model through simulations. The results demonstrate the feasibility of this approach and suggest that it could serve as a basis for reliable large-scale characterization of sensor performance.

Gamero, Miqueas E. [Buenos Aires, CONICET; Fermila↗

Characterization of Spurious Charge in SENSEI Skipper-CCDs

Skipper Charge-Coupled Devices (Skipper-CCDs) are a leading technology in the search for sub-GeV dark matter and coherent elastic neutrino-nucleus scattering. A key background for rare-event searches with these detectors arises from "spurious charge" -- single-electron events generated when charges are transferred through the active region to the serial register, and across the serial register to the readout stage. We present a characterization of spurious charge in both the active region and the serial register of SENSEI Skipper-CCDs, and show that, in a well-shielded low-background environment, the dominant contribution originates in the serial register during Skipper readout, when horizontal clocks are held at constant voltage between pixel transfers. Motivated by this finding, we develop a "tri-level" clocking scheme in which the held-low phase is raised to an intermediate voltage during readout to suppress trap-mediated charge generation. Using the SENSEI detector near the MINOS cavern, we measure a serial-register single-electron density of $(2.9 \pm 0.1) \times 10^{-5}$ electrons/pixel/image under standard SENSEI readout conditions, reduced to $(4.0 \pm 0.4) \times 10^{-6}$ electrons/pixel/image with tri-level clocking -- a factor of $\sim$7 improvement. This technique offers a promising path to lower backgrounds in current and future Skipper-CCD experiments.

Wu, Yikai [YITP, Stony Brook; SUNY, Stony Brook]↗

In situ cryogenic characterization of proton damage in thick p-channel skipper CCDs

Skipper charge-coupled devices (CCDs) are an offshoot of standard silicon pixel detectors and are capable of performing repeated non-destructive charge measurements, enabling deeply sub-electron readout noise. This capability has opened the door to single-photon counting from the near-infrared ($\sim$1.1 $μ$m) to the soft X-ray (several keV), making these devices strong candidates for future astronomical instruments operating in the photon-starved limit. Furthermore, the p-channel architecture used to fabricate Skipper CCDs on n-type silicon has been demonstrated to have an increased hardness to the intense radiation environment of space. Building upon previous irradiation campaigns on room-temperature sensors, here we describe the first radiation-hardness tests of p-channel skipper CCDs at their cryogenic operating temperatures. We assess the performance of the floating-gate output stage and global CCD parameters (charge transfer inefficiency, dark current, hot pixels, and charge traps). We find that these devices maintain excellent performance after displacement damage doses equivalent to ${\sim}$10 years at the Earth/Sun L2 Lagrange point, demonstrating for the first time that these sensors remain radiation-hard in realistic deep-space thermal and radiation environments.

Roach, Brandon M. [Chicago U., KICP] (ORCID:000000↗

Solid state television camera

The design, fabrication, and tests of a solid state television camera using a new charge-coupled imaging device are reported. An RCA charge-coupled device arranged in a 512 by 320 format and directly compatible with EIA format standards was the sensor selected. This is a three-phase, sealed surface-channel array that has 163,840 sensor elements, which employs a vertical frame transfer system for image readout. Included are test results of the complete camera system, circuit description and changes to such circuits as a result of integration and test, maintenance and operation section, recommendations to improve the camera system, and a complete set of electrical and mechanical drawing sketches.

Source record↗

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗

Charge-coupled differential amplifier

Device solves problem of differential voltage gain in sampled-data metal-oxide semiconductor, producing gain at any frequency compatible with CCD operation, with low noise, low power, good linearity, and high stability.

Hewes, C. R.↗

Development of a Shuttle Infrared Telescope Facility /SIRTF/ fine guidance sensor

Fine guidance technology development for the Shuttle Infrared Telescope Facility (SIRTF) centers upon the use of a single multiple-star-tracking sensor to provide the position information necessary to produce three-axis attitude control signals for precision payload pointing. The effort described in this paper is concerned with the development of a fine guidance sensor that employs a high-density charge-coupled imaging device for producing position information signals by using star fields. Multiple star position information produces three-axis position error signals that are used to update inertial reference gyros. The sensor employs advanced position interpolation algorithms to enhance field-of-view resolution and to correct for optical aberrations inherent in spatially chopped star images resulting from the telescope's movable secondary mirror. Operation of the sensor is under the control of a high-performance microcomputer that provides both autonomy and flexibility in a guidance application.

Salomon, P. M.↗

Improved Charge-Coupled Imager For X Rays

Device proposed to improve imaging of x rays. Features thin layer of oxide in virtual phase to increase quantum efficiency and depletion layer nearly as thick as epitaxial silicon layer to increase resolution. Applications include imaging spectrometers for x-ray astronomy, investigations of plasmas, and x-ray crystallography.

Wadsworth, Mark↗

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗

Cooled slow-scan performance of a 512 by 320 element charge-coupled imager

A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan conditions to evaluate the device's performance under a variety of long integration and slow scan readout conditions. Operation in a low blooming mode of operation enables the sensor to be exposed with portions of the image heavily overexposed, without those areas spreading into adjacent picture areas. Device design, layout, and operating mode are described, and presents experimental results, including displayed images taken under cooled slow scan operation, are reported.

Rodgers, R. L., III↗