In Situ Monitoring of H 2 -Induced Nonstoichiometry in Cu 2 O
Nonstoichiometry plays a pivotal role in the functioning of oxide materials, but it is challenging to measure the non-stoichiometric formation and the resulting charge redistribution around the point defects. Using ambient-pressure X-ray photoelectron spectroscopy and Auger electron spectroscopy to monitor the reduction of Cu 2 O in H 2 , we identify the formation of an intermediate, oxygen-deficient Cu 2 O phase and its progressive inward growth into the deeper region of the oxide. Complemented by DFT modeling, we show that the oxygen-deficient Cu 2 O formation occurs via molecular H 2 adsorption at the Cu 2 O surface, which results in the loss of lattice O from the formation of H 2 O molecules that desorb spontaneously from the oxide surface. The resulting oxy-gen-deficient Cu 2 O is a stable intermediate that persists before the Cu 2 O is fully reduced to metallic Cu. The O vacancy induced charge redistribution of the coordinating Cu atoms results in a satellite feature in Cu LMM, which can be used a fingerprint to identify the nonstoichiometry and local charge transfer in non-stoichiometric oxides.