Effects of irradiation with protons on the electrical properties of Bi sub 2 Te sub 3.
Proton irradiation effect on Hall coefficient, resistivity and magnetoresitance of p-type bismuth telluride single crystals
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Proton irradiation effect on Hall coefficient, resistivity and magnetoresitance of p-type bismuth telluride single crystals
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Measuring instrument for amorphous and polycrystalline materials resistivity and Seebeck coefficient as function of temperature and pressure
Hall coefficient and resistivity in undoped heteroepitaxial GaAs on aluminum oxide films grown by trimethylgallium arsine process
Measurement of low-field and high-field resistivity in amorphous Ge in both the planar and transverse directions on the same samples, whose thickness ranged from 0.4 to 4 microns. No anisotropy was found, suggesting that the voids recently described by Galeener (1971) may not play a significant role in these transport processes.
Polymer films about 150 A thick, deposited on glass substrates by electron bombardment of tetramethyltetraphenyltrisiloxane, were studied, after being sandwiched between evaporated aluminum electrodes, the top one semitransparent. The capacitance, conductance, and photoconductance of the sandwiches were measured at room temperature as a function of the electron bombarding current which formed the polymer. The polymer thickness was obtained independently from Christy's (1960) empirical formula for the rate of formation. The obtained results indicate that, with increasing bombarding current, the polymer undergoes an increase in both crosslinking bonds and dangling bonds. Exposure to air drastically reduces the density of dangling bonds, but does not affect the crosslinking.
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In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.
The reliability and quality assurance system and procedures used in developing test equipment for the Lunar Experiment projects are described. The subjects discussed include the following: (1) documentation control, (2) design review, (3) parts and materials selection, (4) material procurement, (5) inspection procedures, (6) qualification and special testing, and failure modes and effects analysis.
It was found that the dielectric constant and loss tangent of lunar soil samples in the range from 100 Hz to 1 MHz are not strongly dependent on frequency provided care is taken to avoid exposure of the sample to atmospheric air containing moisture. The loss tangent value obtained is lower by nearly a factor 10 than any previously reported value. The measurement data imply that the surface layers of the moon are probably extremely transparent to radiowaves.
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The particle size distribution of eleven surface fines samples collected by Apollo 15 and 16 was determined by the method of measuring the sedimentation rate in a column of water. The fact that the grain size distribution in the core samples shows significant differences within a few centimeters variation of depth is important for the understanding of the surface transportation processes which are responsible for the deposition of thin layers of different physical and/or chemical origin. The variation with density of the absorption length is plotted, and results would indicate that for the case of meter wavelength radar waves, reflections from depths of more than 100 meters generally contribute significantly to the radar echoes obtained.
The scope of the project is reported to study the infrared absorption of water and the magnetic properties of the iron in tektites. Subsequently, the work was expanded to include the other properties of tektites and lunar materials. When the lunar samples became available, the emphasis of the research shifted from tektites to lunar samples.
A complete unified discussion of the electromagnetic response of a plane stratified structure is reported. A detailed and comprehensive analysis of the theoretical parts of the electromagnetic is given. The numerical problem of computing numbers of the electromagnetic field strengths is discussed. It is shown that the analysis of the conductive media is not very far removed from the theoretical analysis and the numerical difficulties are not as accute as for the low-loss problem. For Vol. 1, see N75-15570; for Vol. 2 see N75-15571.
Dielectric permittivity, loss tangent, and direct current conductivity of solid sample 70215,14 were measured at temperatures ranging from 100 to 373 K and vacuums of .01 to .1 microtorr; alternating current measurements were made in the 30 Hz to 100 kHz frequency range. It is concluded that dc conductivity undergoes a three order-of-magnitude change between lunar day and lunar night. The assumption is made that strong k' increments at the lower frequencies are partially induced by electrode and dc conductivity effects. Corrections were applied to the experimental data; corrected results suggest relaxation processes occurring at frequencies below 1 kHz.
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