Search NASA⌕ Search

SEARCH · Search NASA

Results for “Epitaxy growth”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Nucleation and growth of blue phase liquid crystals on chemically-patterned surfaces: a surface anchoring assisted blue phase correlation length

In condensed matter, the correlation length is an essential parameter which describes the distance over which a material maintains its structural properties. In liquid crystals, for the orientational order parameter this characteristic length is of the order of nanometers, while in solid crystals it can extend to macroscopic length scales. Here, we report the measurement of the correlation length, or persistence length, of the crystallographic orientation of blue phases (BPs)—chiral liquid crystals with long-range 3D-crystalline structures and submicron-sized lattice-parameters. These materials exhibit phase transformations that have been identified as the liquid analog of crystal-crystal martensitic transformations. In this work, we use liquid epitaxial growth to achieve spontaneous BP-crystal nucleation and subsequent growth. Specifically, we design patterned substrates made of a binary array of regions with different liquid crystal anchoring, which facilitate a uniform nucleation and growth of BP-crystals with (100)-lattice orientation and a simple cubic symmetry. Furthermore, our results indicate that this simple cubic BP, the so-called blue phase II (BPII), forms first on the patterned surface, thereby propagating the growth of domains in directions parallel or perpendicular to the patterned regions. These results are used to understand the emergence of a surface anchoring assisted BPII-correlation length, taken as the distance over which the BP preserves its lattice orientation, as a function of time and pattern characteristics. We found that BPII single crystals can be achieved on patterned regions whose lateral dimensions are equal to or larger than 10 μm, consistent with our measurements of the BPII-correlation length. This newly acquired understanding of the role of surfaces on the formation of BPs is then used to design processes that permit formation of macroscopically large mono-domain, single-crystal BPs by relying on significantly reduced patterned areas (only part of the area is patterned), a feature that could benefit the applications of this intriguing class of materials.

correlation length↗
DOE OSTI2024

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of $(0001)$-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {$10\bar{1}1$}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼10 9 cm −2 ) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼10 8 cm −2 ). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, in this work, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Crystallographic defects↗
DOE OSTI2024

High Temperature, Isothermal Growth Promotes Close Packing and Thermal Stability in DNA-Engineered Colloidal Crystals

Here, we report a strategy to accelerate the synthesis and increase the crystallinity of colloidal crystals engineered with DNA. Specifically, by holding the DNA-modified Au particle building blocks above the T m of the individual nanoparticle building blocks, but slightly below the T m of the anticipated colloidal crystal during the assembly process, crystallinity is increased, and enthalpically-favored phases with high degrees of facet registration are observed. We studied the utility of this approach with systems for which the commonly adopted slow-cooling approach yielded primarily amorphous aggregates. In particular, we used it to synthesize high-volume fraction colloidal crystals from large (80 nm) anisotropic nanoparticles (cubes and rhombic dodecahedra) with short (<14 nm) DNA designed to restrict the degrees of freedom for the DNA bonds and maintain the anisotropy of the particle building block. Small-angle X-ray scattering and electron microscopy studies show that the crystalline phases synthesized via this method are more thermally stable than their corresponding aggregate phases, likely due to an increased number of DNA-DNA bonds between particles. Crystal size tunability (between 0.5 and 15 µm edge lengths) and epitaxial growth were demonstrated using this strategy by modulating the NaCl concentration in tandem with previously synthesized colloidal crystal nuclei. Taken together, this isothermal strategy provides a route to deliberately crystallize a wide variety of anisotropic colloidal materials and expands the phase space accessible to nanoparticles modified with DNA.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Epitaxial Integration of Dirac Semimetals with Si(001)

Topological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconductor substrates will ultimately be required to maximize their technological reach. Here, epitaxial growth of the Dirac semimetal Cd3As2 on Si(001) is demonstrated through two routes. First, Cd3As2(112) epilayers are grown on Si(001) via an intermediate CdTe(111) buffer layer. Second, Cd3As2(112) is grown directly on Si(001). This work sets the foundation for integration of novel semimetal materials with existing CMOS technology.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm 2 ) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ$\cdot$cm 2 differential specific ON-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm 2 ) that is capable of 6.4-kV breakdown with a differential specific ON-resistance of 10.2 mΩ$\cdot$cm 2 , when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm 2 diode with a room temperature breakdown of 5.6 kV. In this work, these results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of <1×10 15 cm –3 and a carefully designed four-zone junction termination extension.

42 ENGINEERING↗
DOE OSTI2021

Atomic Structure of the Initial Nucleation Layer in Hexagonal Perovskite BaRuO 3 Thin Films

Hexagonal perovskites are an attractive family of materials due to their various polymorphs and rich structure–property relationships. BaRuO 3 (BRO) is a prototypical hexagonal perovskite, in which the electromagnetic properties are significantly modified depending on its lattice structure. Whereas thin-film synthesis would allow the study of the diverse properties of hexagonal perovskites by epitaxially stabilizing various metastable polymorphs, the epitaxial growth of hexagonal perovskites, especially at the initial growth stage, is yet to be addressed. In this study, it is shown that an intriguing nucleation behavior takes place during the initial stabilization of a hexagonal 9R BRO thin film deposited on a (111) SrTiO 3 (STO) substrate. It is found that a nanoscale strained layer composed of different RuO 6 octahedral stacking is initially formed at the interface followed by a relaxed single crystal 9R BRO thin film. Within the interface layer, hexagonal BRO is nucleated on the (111) STO substrate by both face- and corner-sharing octahedra. More interestingly, it is found that boundaries between differently stacked nucleation layers (heterostructural boundaries) facilitate strain relaxation, in addition to the formation of conventional misfit dislocations evolved from homostructural boundaries. The observations reveal an important underlying mechanism to understand the thin-film epitaxy and strain accommodation in hexagonal perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Solutions to Droop and the Green Gap by Novel Carrier Injection

Long-wavelength (green, yellow, red) visible light-emitting diodes (LEDs) have historically been inefficient compared to blue light-emitters in the III-nitrides. This is due to many factors, including poor material quality due to the low growth temperatures required for high Incomposition InGaN quantum wells (QWs), and the polar nature of the III-nitride crystal structure. Spontaneous and piezoelectric polarization in the III-nitrides causes enhanced quantum-confined Stark effect (QCSE), which spatially separates electrons and holes and reduces radiative recombination (ie: light output) from the devices. Polarization in the crystal also induces additional potential barriers that electrons and holes must cross over before entering the QWs where they can recombine to emit light. Both of these polarization effects worsen as emission wavelength increases, making blue III-nitride LEDs are the most efficient and red III-nitride LEDs the least efficient. The focus of this project has been solving the latter polarization-related issue through the implementation of V-defects in long wavelength LEDs. V-defects are morphological defects which are commonly observed in c-plane III-nitrides. They are observed as hexagonal pyramid-shaped depressions on the c-plane surface, with six semipolar sidewalls. They typically form at the apex of threading dislocations (TDs) under conditions of kinetically-limited growth and low growth-temperature. They were initially thought to be detrimental to LED performance and much early work focused on eliminating them entirely from III-nitride devices. However, over the past decade work has emerged that indicate that they can improve LED performance by allowing electrons and holes to bypass the polarization-induced barriers present in the c-plane and directly enter the QWs of an LED. This is due to the semipolar nature of the V-defect sidewall: these sidewalls are thin and lack the polarization-induced barriers which prevent carriers easily moving between layers. V-defects have since been determined to be an efficient avenue by which to inject electrons and holes into the c-plane QWs where they can recombine to emit light. Throughout this project we have explored lateral injection through a variety of methods: simulation (Task 2), epitaxial growth of V-defect and non-V-defect LEDs (Tasks 1, 3, 4, 5, 6), and advanced characterization methods (Task 7). All tasks have been completed. A description of each task completed follows from this section.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Scientific/Technical Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 µm or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

20KV↗
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower-voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 um or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV-class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Scan strategies in EBM-printed IN718 and the physics of bulk 3D microstructure development

Three-dimensional (3D) characterization provides opportunities for understanding processing-structure relationships in additively manufactured (AM) materials. Bulk samples of Inconel 718 were fabricated via electron beam melting (EBM) in order to study microstructural development as a function of energy input and beam scan strategy. TriBeam tomography of bulk Inconel 718 microstructures built under steady-state growth conditions reveals the sensitivity of microstructure formation and evolution to machine process parameters. Here, samples manufactured using a narrow range of energy input per unit build area result in varied grain morphologies and crystallographic textures. Using TRUCHAS, a thermal simulation software, the thermal history of bulk scan strategies was predicted, and combined with a calibrated microstructure-processing map to accurately predict bulk grain morphologies. The solidification parameters and the 3D measured nucleation density are used to predict the transition between columnar and equiaxed grain morphologies, providing a process map to guide AM parameter choices to locally control as-printed microstructure. A two-dimensional metric for characterizing bulk grain morphology was also found to agree well with predictions from the process map calibrated by 3D data. Combined with 3D tomography and thermal modelling, the physics of structure development were understood at a new level of detail with respect to the competing processes of grain nucleation and epitaxial growth.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Epitaxial (Al x Ga 1-x-y In y ) 2 O 3 Alloys Lattice Matched to Monoclinic Ga 2 O 3 Substrates

We have epitaxially stabilized a series of monoclinic (Al x Ga 1-x-y In y ) 2 O 3 alloys by careful choice of molecular beam epitaxy growth conditions, which balance alloy growth with suboxide desorption. The films are pseudomorphic to (010) β-Ga 2 O 3 substrates at thicknesses up to 150 nm with compositions ranging from (Al 0.01 Ga 0.83 In 0.16 ) 2 O 3 to (Al 0.24 Ga 0.75 In 0.03 ) 2 O 3 . The absorption edge shifts from approximately 4.62-5.14 eV with coincidently increasing Al and decreasing In mole fractions. J-V measurements reveal an increase in resistivity over four orders of magnitude with a maximum value of 4.2 x 10 5 Ω-cm for (Al 0.17 Ga 0.76 In 0.07 ) 2 O 3 , which has nearly identical lattice parameters (both in-plane and out-of-plane) to the underlying β-Ga 2 O 3 . Scanning transmission electron microscopy of this sample reveals a mostly uniform and single crystalline film, though we identify areas of non-uniform In incorporation and some γ-phase inclusions. This work demonstrates the feasibility of thick layers lattice-matched to β-Ga 2 O 3 with increased bandgap compared to phase-separation limited (Al,Ga) 2 O 3 . These alloys can enable higher bandgap epitaxial dielectrics and high sheet charge density transistors by increasing the conduction band offset with respect to β-Ga 2 O 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation

Systems of spins engineered with tunable density and reduced dimensionality enable a number of advancements in quantum sensing and simulation. Defects in diamond, such as nitrogen-vacancy (NV) centers and substitutional nitrogen (P1 centers), are particularly promising solid-state platforms to explore. However, the ability to controllably create coherent, two-dimensional spin systems and characterize their properties, such as density, depth confinement, and coherence, is an outstanding materials challenge. We present a refined approach to engineer dense (≳1 ppm ∙ nm), 2D nitrogen, and NV layers in diamond using delta-doping during plasma-enhanced chemical vapor deposition epitaxial growth. We employ both traditional materials techniques, e.g., secondary ion mass spectrometry, alongside NV spin decoherence-based measurements to characterize the density and dimensionality of the P1 and NV layers. We find P1 densities of 5–10 ppm ∙ nm, NV densities between 1 and 3.5 ppm ∙ nm tuned via electron irradiation dosage, and depth confinement of the spin layer down to 1.6 nm. We also observe high (up to 0.74) ratios of NV to P1 centers and reproducibly long NV coherence times, dominated by dipolar interactions with the engineered P1 and NV spin baths.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Hybrid Molecular Beam Epitaxy for Single-Crystalline Oxide Membranes with Binary Oxide Sacrificial Layers

The advancement in thin-film exfoliation for synthesizing oxide membranes has led to possibilities for creating artificially assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing for their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess an intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques such as molecular beam epitaxy (MBE). This is where easy-to-grow binary alkaline-earth-metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of the single-crystalline perovskite SrTiO 3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba 1–x Ca x O films, employing a hybrid MBE method. Our results highlight the rapid (≤5 min) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution X-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate single-crystalline STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding the research and application possibilities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

V‐Groove Si Nanopatterning for the Direct Epitaxy of Orientation‐Patterned III–V Nonlinear Optical Crystals

Orientation‐patterned (OP) III–V semiconductors—used as quasi‐phase‐matched crystals for nonlinear optics applications—are typically epitaxially grown on expensive III–V substrates using a complex process requiring three separate epitaxy steps. In this work, a method is demonstrated for growing orientation‐patterned III–V crystals on Si substrates through V‐groove nanopatterning and a single epitaxial growth. V‐groove Si allows for suppression of random antiphase domain formation that is typical of III–V growth on (001)‐oriented Si through the use of (111)‐faceted trenches patterned on (001)‐oriented Si substrates. By alternating the directions of the V‐groove trenches between [110] and [10], antiphase boundaries can be selectively induced at the boundaries between the two directions of trenches due to the difference in symmetry between the III–V material and Si. This approach allows for a greatly simplified process for growing OP‐III‐Vs and more broadly is a new, robust approach for precisely patterning antiphase boundaries of arbitrary shape and length scales down to 50 nm.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Superconducting (Ba,K)Fe 2 As 2 epitaxial films on single and bicrystal SrTiO 3 substrates

The realization of single crystal and bicrystal films of superconducting materials is of great interest because they allow the investigation of the intragrain performance as well as the understanding of potential limitations in the grain boundary transparency. For many years, the realization of a high-quality (Ba,K)Fe 2 As 2 film has been challenging. Here, the realization of (Ba,K)Fe 2 As 2 epitaxial thin films on single crystal SrTiO 3 (001) and [001]-tilt-type SrTiO 3 bicrystal substrates with high superconducting properties is demonstrated. The epitaxial growth of (Ba,K)Fe 2 As 2 was enabled by implementing an undoped BaFe 2 As 2 buffer layer between the SrTiO 3 substrate and (Ba,K)Fe 2 As 2 film. The film exhibits a high T c of 38.0 K and an extremely high J c of 14.3 MA/cm 2 at 4.2 K. Artificial grain boundaries of (Ba,K)Fe 2 As 2 were also successfully achieved on bicrystals with misorientation angles up to 36.8° by the same preparation methods. The artificial grain boundaries exhibited an identical T c of 38.0 K and an excellent transfer of the grain orientation from the bicrystal substrates with high crystallinity comparable to that of the high-quality Ba(Fe,Co) 2 As 2 films. Furthermore, this enables the investigation of the intrinsic (Ba,K)Fe 2 As 2 grain boundary nature, which will clarify its potential for superconducting applications, like Josephson junctions, wires, and magnets.

(Ba,K)Fe2As2↗
DOE OSTI2023

Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V Devices

In this work, we apply the morphology control of hydride vapor phase epitaxial (HVPE) growth to planarize faceted, non-planar substrates. Controlled spalling is a promising high-throughput substrate reuse technology that could reduce substrate costs for III-V devices; however, the spalling fracture for (100)-oriented GaAs substrates produces a regularly corrugated surface of facets that are 5-20 um in height. We discuss how to planarize these surfaces using only a few minutes of HVPE growth and how to minimize the impact on throughput when integrating faceted wafers into a potential manufacturing process at scale.

epitaxy↗
DOE OSTI2022

Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. Here, in this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m -1 K -1 for 25.5–133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron–phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron–phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Freestanding BaTiO 3 ‐Au Vertically Aligned Nanocomposite toward Flexible Multi‐Sensing Platform

Abstract Flexible and wearable sensors show enormous potential for personalized healthcare devices by real‐time monitoring of an individual's health. Typically, a single functional material is selected for one sensor to sense a particular physical signal while multiple materials will be selected for multi‐mode sensing. Vertically aligned nanocomposites (VANs) have recently demonstrated various material combinations and novel coupled multifunctionalities that are hard to achieve in any single‐phase material alone, including multiphase multiferroics, magneto‐optic coupling, and strong magnetic and optical anisotropy. Integrating these novel VANs into wearable sensors shows enormous potential in multi‐mode sensing owing to their multifunctional nature. In this work, the transfer of VANs onto polydimethylsiloxane as a novel flexible chemical and pressure sensor is demonstrated. For this demonstration, the classical BaTiO 3 ‐Au VAN with combined plasmonic and piezoelectric properties is used to demonstrate a multi‐sensing mechanism. A thin water‐soluble buffer of Sr 3 Al 2 O 6 serves as a buffer layer for the epitaxial growth and transfer process. The electrical output based on the piezoelectric responses and identifying 4‐mercaptobenzoic acid by surface‐enhanced Raman spectroscopy reveal great potential for free‐standing VANs in a wearable multifunctional sensing platform.

Tsai, Benson Kunhung [School of Materials Engineer↗