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At least 163 records · Page 9
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NASA NTRS2010

Radiation Chemistry in Ammonia-Water Ices

We studied the effects of 100 keV proton irradiation on films of ammonia-water mixtures between 20 and 120 K. Irradiation destroys ammonia, leading to the formation and trapping of H2, N2 NO, and N2O, the formation of cavities containing radiolytic gases, and ejection of molecules by sputtering. Using infrared spectroscopy, we show that at all temperatures the destruction of ammonia is substantial, but at higher temperatures (120 K), it is nearly complete (approximately 97% destroyed) after a fluence of 10(exp 16) ions per square centimeter. Using mass spectroscopy and microbalance gravimetry, we measure the sputtering yield of our sample and the main components of the sputtered flux. We find that the sputtering yield depends on fluence. At low temperatures, the yield is very low initially and increases quadratically with fluence, while at 120 K the yield is constant and higher initially. The increase in the sputtering yield with fluence is explained by the formation and trapping of the ammonia decay products, N2 and H2 which are seen to be ejected from the ice at all temperatures.

Loeffler, M. J.↗
NASA NTRS2012

Optical and Scanning Electron Microscopy of the Materials International Space Station Experiment (MISSE) Spacecraft Silicone Experiment

Under a microscope, atomic oxygen (AO) exposed silicone surfaces are crazed and seen as "islands" separated by numerous crack lines, much analogous to mud-tile cracks. This research characterized and compared the degree of AO degradation of silicones by analyzing optical microscope images of samples exposed to low Earth orbit (LEO) AO as part of the Spacecraft Silicone Experiment. The Spacecraft Silicone Experiment consisted of eight DC 93-500 silicone samples exposed to eight different AO fluence levels (ranged from 1.46 to 8.43 10(exp 21) atoms/sq cm) during two different Materials International Space Station Experiment (MISSE) missions. Image analysis software was used to analyze images taken using a digital camera. To describe the morphological degradation of each AO exposed flight sample, three different parameters were selected and estimated: (1) average area of islands was determined and found to be in the 1000 to 3100 sq mm range; (2) total length of crack lines per unit area of the sample surface were determined and found to be in the range of 27 to 59 mm of crack length per sq mm of sample surface; and (3) the fraction of sample surface area that is occupied by crack lines was determined and found to be in the 25 to 56 percent range. In addition, average crack width can be estimated from crack length and crack area measurements and was calculated to be about 10 mm. Among the parameters studied, the fraction of sample surface area that is occupied by crack lines is believed to be most useful in characterizing the degree of silicone conversion to silicates by AO because its value steadily increases with increasing fluence over the entire fluence range. A series of SEM images from the eight samples exposed to different AO fluences suggest a complex sequence of surface stress due to surface shrinkage and crack formation, followed by re-distribution of stress and shrinking rate on the sample surface. Energy dispersive spectra (EDS) indicated that upon AO exposure, carbon content on the surface decreased relatively quickly at the beginning, to 32 percent of the pristine value for the least exposed sample in this set of experiments (1.46 10(exp 21) atoms/sq cm), but then decreased slowly, to 22 percent of the pristine value for the most exposed sample in this set of experiment (8.43 10(exp 21) atoms/sq cm). The oxygen content appears to increase at a slower rate. The least and most AO exposed samples were, respectively, 52 and 150 percent above the pristine values. The silicone samples with the greater AO exposure (7.75 10(exp 21) atoms/sq cm and higher) appear to have a surface layer which contains SiO2 with perhaps small amounts of unreacted silicone, CO and CO2 sealed inside.

Hung, Ching-cheh↗
NASA NTRS1972

Previous design restraints and radiation damage effects of low energy particles

Spacecraft design fluences and damage by low energy electrons and protons are summarized. For electron energies 5 MeV, the design fluence is 10 to the 11th power electrons/sq cm; for energies 5 MeV, the integral spectrum is assumed to go as 1/E sq. The design fluences for proton energies 30 MeV is 1.5 x 10 to the 9th power protons/sq cm; for energies 100 MeV, it is 5 x 10 to the 14th power protons/sq cm. The radioisotope thermoelectric generator gamma and neutron radiation constraints are listed. Damage due to electron energies 0.5 MeV and proton energies 10 MeV are summarized for effects on spacecraft thermal surfaces, reflective surfaces, and refractive materials. The high frequency noise figure for field effect transistors may increase markedly, and another effect is the buildup of charge on insulating surfaces, resulting in large electric fields.

Trainor, J. H.↗
NASA NTRS1972

Irradiation effects on 17-7 PH stainless steel, A-201 carbon steel, and titanium-6-percent-aluminum-4-percent-vanadium alloy

Irradiation effects on three materials from the NASA Plum Brook Reactor Surveillance Program were determined. An increase of 105 K in the nil-ductility temperature for A-201 steel was observed at a fluence of approximately 3.1 x 10 to the 18th power neutrons/sq cm (neutron energy E sub n greater than 1.0 MeV). Only minor changes in the mechanical properties of 17-7 PH stainless steel were observed up to a fluence of 2 x 10 to the 21st power neutrons/sq cm (E sub n greater than 1.0 MeV). The titanium-6-percent-aluminum-4-percent-vanadium alloy maintained its notch toughness up to a fluence of 1 x 10 to the 21st power neutrons/sq cm (E sub n greater than 1.0 MeV).

Hasse, R. A.↗
NASA NTRS1973

Effects of proton irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

The 1 ohm-cm and 10 ohm-cm silicon solar cells were exposed to 1.0 MeV protons at a fixed flux of 10 to the 9th power P/sq cm-sec and fluences of 10 to the 10th power, 10 to the 11th power, 10 to the 12th power and 3 X 10 to the 12th power P/sq cm. I-V curves of the cells were made at room temperature, 65 C and 165 C after each irradiation. A value of 139.5 mw/sq cm was taken as AMO incident energy rate per unit area. Degradation occurred for both uncovered 1 ohm-cm and 10 ohm-cm cells. Efficiencies are generally higher than those of comparable U.S. cells tested earlier. Damage (loss in maximum power efficiency) with proton fluence is somewhat higher for 10 ohm-cm cells, measured at the three temperatures, for fluences above 2 X 10 to the 11th power P/sq cm. Cell efficiency, as expected, changes drastically with temperature.

Nicoletta, C. A.↗
NASA NTRS1973

Apollo 16 neutron stratigraphy.

The Apollo 16 soils have the largest low-energy neutron fluences yet observed in lunar samples. Variations in the isotopic ratios Gd-158/Gd-157 and Sm-150/Sm-149 (up to 1.9 and 2.0%, respectively) indicate that the low-energy neutron fluence in the Apollo 16 drill stem increases with depth throughout the section sampled. Such a variation implies that accretion has been the dominant regolith 'gardening' process at this location. The data may be fit by a model of continuous accretion of pre-irradiated material or by models involving as few as two slabs of material in which the first slab could have been deposited as long as 1 b.y. ago. The ratio of the number of neutrons captured per atom by Sm to the number captured per atom by Gd is lower than in previously measured lunar samples, which implies a lower energy neutron spectrum at this site. The variation of this ratio with chemical composition is qualitatively similar to that predicted by Lingenfelter et al. (1972). Variations are observed in the ratio Gd-152/Gd-160 which are fluence-correlated and probably result from neutron capture by Eu-151.

Russ, G. P., III↗
NASA NTRS1974

Energetic solar proton versus terrestrially trapped proton fluxes for the active years 1977 - 1983

Ratios of solar to trapped proton fluences were computed for circular-orbit, geocentric space missions to be flown during the active phase of the next solar cycle (1977-1983). The ratios are presented as functions of orbit altitude and inclination, mission duration, proton energy threshold, and the chance the mission planner is willing to take that the actually encountered solar proton fluence will exceed the design fluence provided by the statistical solar proton model. It is shown that the ratio is most sensitively dependent on orbit altitude and inclination, with trapped protons dominant for low inclination, low and mid altitude orbits and for high inclination, mid altitude orbits. Conversely, solar protons are dominant for high inclination, low altitude orbits, and for low and high inclination, high altitude orbits.

King, J. H.↗
NASA NTRS1973

Temperature dependence of damage coefficient in electron irradiated solar cells

Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.

Faith, T. J.↗
NASA NTRS1975

Energetic solar proton vs terrestrially trapped proton fluxes

The relative importance of solar and trapped proton fluxes in the consideration of shielding requirements for geocentric space missions is analyzed. Using models of these particles, their fluences encountered by spacecraft in circular orbits are computed as functions of orbital altitude and inclination, mission duration, threshold energy (10 to 100 MeV), and risk factor (for solar protons only), and ratios of solar-to-trapped fluences are derived. It is shown that solar protons predominate for low-altitude polar and very high-altitude missions, while trapped protons predominate for missions at low and medium altitudes and low inclinations. It is recommended that if the ratio of solar-to-trapped protons falls between 0.1 and 10, both fluences should be considered in planning shielding systems.

King, J. H.↗
NASA NTRS1975

A search for solar flare positrons

The detection of solar gamma-ray line emission and observations of the isotopes H2, H-3, and He-3 in solar cosmic rays provide direct evidence for the occurrence of high energy nuclear reactions in solar flare events. Appreciable numbers of other reaction products, including positrons with energies near about 1 MeV, should also be produced in such events. We have searched for positrons in the 0.16-1.6 MeV energy interval during 5 H-3 rich solar particle events. Based on calculations of positron and He-3 production at the sun, and using a simplified model of interplanetary propagation, we might expect comparable fluences of positrons and He-3 to be observed. Summing over these 5 events, we find the 0.16 to 1.6 MeV positron fluence to be a maximum of about 10% of the He-3 fluence with more tnan 1 MeV/nuc. This suggests that other processes, such as preferential trapping by the solar magnetic field, may be important.

Mewaldt, R. A.↗
NASA NTRS1977

The effect of oxidation-expanded defects upon MOS parameters

Implantation of Ne ions was chosen as a means of introducing a uniformly distributed quantitatively controllable and reproducible amount of microdefects at the silicon surface. Each wafer was ion-implanted on one half of its surface, the other half remaining as a control. Seven implant fluences from 1 trillion to 5 by 10 to the 14th power Ne ions/sq cm were used. The fluences, as well as the concentrations of defects expanded by the subsequent gate oxidation, were correlated with seven different MOS parameters. For implant fluences of 10 to the 14th power per sq cm and above, increasing stacking-fault densities were found. The oxide defect density associated with time-dependent breakdown increased significantly with Ne dose. The presence of oxidation-expanded defects drastically increases the surface-generation velocity and decreases the bulk lifetime. Slight increases in flatband voltage and surface-state density occurred only for the wafers having the greatest defect concentrations. Oxidation of a P-containing damaged silicon surface results in a greater pileup of P at the surface than occurs for the oxidation of a similar but undamaged surface. It appears that the expanding defects restrain the diffusion of P inward from the surface.

Prussin, S.↗
NASA NTRS1980

Proton radiation damage in bulk n-GaAs

Bulk samples of Te-doped n-type GaAs were irradiated using 10 MeV to 24 MeV protons to fluences between 2 x 10 to the 11th power protons/sq cm and 2 x 10 to the 14th power protons/sq cm. Majority carrier electrical effects were measured using the vanderPauw techniques and it was observed that radiation damage was minimal at the 10 to the 11th power proton/sq cm fluence. For the higher fluences, carrier removal was proportional to Delta E/Delta x for the protons indicating ionization interactions between the protons and atoms. Thermal annealing was observed at 155 C.

Liu, D. C.↗
NASA NTRS1982

Radiation damage

The radiation damage workshop considered a variety of topics among which were the need for equivalent electron fluences in gallium arsenide, the possibility of 15 percent end-of-life efficiencies for silicon, increasing radiation resistance in gallium arsenide, annealing of radiation damage and the need for radiation damage studies in cascade cells. The workshop members agreed that a high priority should be assigned to obtaining equivalent electron fluences for gallium arsenide cells. It was suggested that 1 MeV would be a reasonable electron energy for this purpose. Special care should be given to proton irradiations particularly for energies below 1 MeV. In addition, omnidirectional rather than normal incidence protons should be used. It was also agreed that there was a need for obtaining damage coefficients in gallium arsenide. In silicon, there is a requirement for additional flight data, especially in proton dominated orbits. These data are needed to further check the accuracy of the 1 MeV equivalence fluences.

Weinberg, I.↗
NASA NTRS1984

Two probable optical flashes from gamma-ray bursters

Two images on archival photographic plates which are most likely records of optical flashes from gamma-ray bursters (GRBs) were examined. One of these images appears on a 1901 plate in the field of the 5 Nov. 1979 GRB, while the other is in the field of the 13 Jan. 1979 GRB on a plate exposed in 1944. The 1901 optical transient image is circular in shape, while all normal star images are trailed by 8 in. No optical transients are found in a control region which is 34.3 times larger than the GRB error regions examined. Independent limits on the optical flash rate from the sky yield a probability of less than 0.0001 that any one of the optical transients is due to a background flash. A total exposure of 2.7 years was examined for GRB flashes at known GRB locations on the Harvard plates and a total of three GRB flashes were seen, that the average recurrence time scale for optical flashes is roughly one year. The optical fluence of these optical flashes was measured. For the three currently known GRB optical flashes, the ratio of gamma-ray fluence (from a modern burst) to the optical fluence (from a archival burst) were measured to be 800, 900, and 900.

Schaefer, B. E.↗
NASA NTRS1984

Two probable optical flashes from gamma-ray bursters

Two images on archival photographic plates which are most likely records of optical flashes from gamma-ray bursters (GRBs) were examined. One of these images appears on a 1901 plate in the field of the Nov. 5, 1979 GRB, while the other is in the field of the Jan. 13, 1979 GRB on a plate exposed in 1944. The 1901 optical transient image is circular in shape, while all normal star images are trailed by 8 in. No optical transients are found in a control region which is 34.3 times larger than the GRB error regions examined. Independent limits on the optical flash rate from the sky yield a probability of less than 0.0001 that any one of the optical transients is due to a background flash. A total exposure of 2.7 years was examined for GRB flashes at known GRB locations on the Harvard plates and a total of three GRB flashes were seen, that the average recurrence time scale for optical flashes is roughly one year. The optical fluence of these optical flashes was measured. For the three currently known GRB optical flashes, the ratio of gamma-ray fluence (from a modern burst) to the optical fluence (from a archival burst) were measured to be 800, 900, and 900.

Schaefer, B. E.↗
NASA NTRS1985

Burst annealing of electron damage in silicon solar cells

A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space.

Day, A. C.↗
NASA NTRS1985

Photon radiation effects on CdS/CuInSe2 thin film solar cells

The unknown tolerance of CuInSe2 cells to proton irradiation, was tested. It was shown that CdS/CuInSe2 solar cells have an inherent tolerance to irradiation by 1 MeV electrons up to at least 2 x 10 to the 16th power electrons/sq cm. Eleven, unencapsulated, 1 sq cm cells deposited on alumina substrates were irradiated with 1 MeV protons at normal incidence. The cells were exposed to six fluences ranging from 2.5 x 10 to the 10th power protons/sq cm to 5.0 x 10 to the 13th power protons/sq cm. After each interval of exposure, the cells were removed from the radiation chamber to undergo current/voltage characterization. It is shown that none of the cells electrical characteristics exhibited any degradation up to and including a fluence of 1 x 10 to the 11th power protons/sq cm. At fluences greater than this, the damage to the CuInSe2 cells V sub oc and fill factor (FF) was more severe than that exhibited by the Isc. The CuInSe2 cells proved to be approximately a factor of 50 more resistant to 1 MeV proton irradiation than silicon or gallium arsenide cells. Annealing of a CuInSe2 cell at 225 deg C for 6 minutes restored it to within 95% of its initial efficiency.

Dursch, H.↗
NASA NTRS1986

Optical reprocessing of gamma-ray bursts

One model for the optical flashes associated with three cosmic gamma-ray burst sources invokes the reprocessing of some of the gamma-radiation emitted by a hypothesized collapsed object in the surface layers of a nearby companion star. This model was investigated by carrying out detail, fully hydrodynamical calculations of such reprocessing in the surface layers of very low mass stars. It is found that, at most, 7 percent of the gamma-ray fluence incident on the companion star is reprocessed into the blue band; the time scale for this reprocessing is typically 100 s, which is long compared to the duration of the gamma-ray burst itself. Using this result, it is shown that there is marginal agreement between the observed and calculated ratios of gamma-ray fluence to optical fluence at earth.

Melia, F.↗