Proton radiation damage in bulk n-GaAs

Liu, D. C.; Blue, J. W.; Flood, D. J.; Stanchina, W. E.

NASA NTRS · 19810009042

Proton radiation damage in bulk n-GaAs

Liu, D. C.·Blue, J. W.·Flood, D. J.·Stanchina, W. E.

Abstract

Bulk samples of Te-doped n-type GaAs were irradiated using 10 MeV to 24 MeV protons to fluences between 2 x 10 to the 11th power protons/sq cm and 2 x 10 to the 14th power protons/sq cm. Majority carrier electrical effects were measured using the vanderPauw techniques and it was observed that radiation damage was minimal at the 10 to the 11th power proton/sq cm fluence. For the higher fluences, carrier removal was proportional to Delta E/Delta x for the protons indicating ionization interactions between the protons and atoms. Thermal annealing was observed at 155 C.

Keep this discovery

Explore connections, maps & timelines

BibTeX RIS

Liu, D. C., Blue, J. W., Flood, D. J., Stanchina, W. E.. 1980-01-01. Proton radiation damage in bulk n-GaAs. https://ntrs.nasa.gov/citations/19810009042

Cite the original work for its findings. Save a collection to share your selection of sources.