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Liu, D. C.

Publications and source records attributed to Liu, D. C..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Adhesion, friction and deformation of ion-beam-deposited boron nitride films

The tribological properties and mechanical strength of boron nitride films were investigated. The BN films were predominantly amorphous and nonstoichiometric and contained small amounts of oxides and carbides. It was found that the yield pressure at full plasticity, the critical load to fracture, and the shear strength of interfacial adhesive bonds (considered as adhesion) depended on the type of metallic substrate on which the BN was deposited. The harder the substrate, the greater the critical load and the adhesion. The yield pressures of the BN film were 12 GPa for the 440C stainless steel substrate, 4.1 GPa for the 304 stainless steel substrate, and 3.3 GPa for the titanium substrate.

Miyoshi, K.↗
NASA NTRS1986

Ellipsometric and optical study of amorphous hydrogenated carbon films

A low-frequency plasma deposition system was used to prepare amorphous hydrogenated carbon (a-C:H) films. The growth energy was varied by changing the power and/or pressure of the plasma. Ellipsometry and optical absorption were used to obtain the optical energy gap, the density of states, and the refractive index. Ion sputtering was used in conjunction with ellipsometry and Auger electron spectroscopy to get absolute sputtering rates. The plasma deposited a-C:H is amorphous with an optical energy gap of approximately 2.0-2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index, and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement with, and give a fine-tuned positive confirmation to, an existing conjecture on the nature of the a-C:H films (Kaplan et al., 1985).

Alterovitz, S. A.↗
NASA NTRS1985

'Diamondlike' carbon films - Optical absorption, dielectric properties, and hardness dependence on deposition parameters

An RF plasma deposition system was used to prepare amorphous 'diamondlike' carbon films. The source gases for the RF system include methane, ethylene, propane, and propylene, and the parameters varied were power, dc substrate bias, and postdeposition anneal temperature. Films were deposited on various substrates. The main diagnostics were optical absorption in the visible and in the infrared, admittance as a function of frequency, hardness, and Auger and ESCA spectroscopy. Band gap is found to depend strongly on RF power level and band gaps up to 2.7 eV and hardness up to 7 Mohs were found. There appears to be an inverse relationship between hardness and optical band gap.

Natarajan, V.↗
NASA NTRS1985

Plasma deposited hydrogenated carbon on GaAs and InP

The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

Warner, J. D.↗
NASA NTRS1985

Optical properties of hydrogenated amorphous carbon films grown from methane plasma

A 30 kHz ac glow discharge formed from methane gas was used to grow carbon films on InP substrates. Both the growth rate, and the realitive Ar ion sputtering rate at 3 keV varied monotonically with deposition power. Results from the N-15 nuclear reaction profile experiments indicated a slight drop in the hydrogen concentration as more energy was dissipated in the ac discharge. Values for the index of refraction and extinction coefficient ranged from 1.721 to 1.910 and 0 to -0.188, respectively. Optical bandgaps as high as 2.34 eV were determined.

Pouch, J. J.↗
NASA NTRS1985

Ellipsometric and optical study of some uncommon insulator films on 3-5 semiconductors

Optical properties of three types of insulating films that show promise in potential applications in the 3-4 semiconductor technology were evaluated, namely a-C:H, BN and CaF2. The plasma deposited a-C:H shows an amorphous behavior with optical energy gaps of approximately 2 to 2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement, and give a fine-tuned positive confirmation to an existing conjecture on the nature of a-C:H films (1). Ion beam deposited BN films show amorphous behavior with energy gap of 5 eV. These films are nonstoichiometric (B/N approximately 2) and have refractive index, density and/or hardness which are dependent on the deposition conditions. The epitaxially grown CaF2 on GaAs films have optical parameters equal to bulk, but evidence of damage was found in the GaAs at the interface.

Alterovitz, S. A.↗
NASA NTRS1985

Carbon films grown from plasma on III-V semiconductors

Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies.

Pouch, J. J.↗
NASA NTRS1984

Effect of Interfacial characteristics of metal clad polymeric substrates on electrical high frequency interconnection performance

Etched metallic conductor lines on metal clad polymeric substrates are used for electronic component interconnections. Significant signal losses are observed for microstrip conductor lines used for interconnecting high frequency devices. At these frequencies, the electronic signal travels closer to the metal-polymer interface due to the skin effect. Copper-teflon interfaces were characterized by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to determine the interfacial properties. Data relating roughness of the copper film to signal losses was compared to theory. Films used to enhance adhesion are found, to contribute to these losses.

Bhasin, K. B.↗
NASA NTRS1984

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Anzic, G.↗
NASA NTRS1984

Plasma deposited diamondlike carbon on GaAs and InP

The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cls XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

Warner, J. D.↗
NASA NTRS1984

Optical and interfacial electronic properties of diamond-like carbon films

Hard, semitransparent carbon films were prepared on oriented polished crystal wafers of silicon, indium phosphide and gallium arsenide, as well as on KBr and quartz. Properties of the films were determined using IR and visible absorption spectrocopy, ellipsometry, conductance-capacitance spectroscopy and alpha particle-proton recoil spectroscopy. Preparation techniques include RF plasma decomposition of methane (and other hydrocarbons), ion beam sputtering, and dual-ion-beam sputter deposition. Optical energy band gaps as large as 2.7 eV and extinction coefficients lower than 0.1 at long wavelengths are found. Electronic state densities at the interface with silicon as low as 10 to the 10th states/eV sq cm per were found.

Woollam, J. A.↗
NASA NTRS1983

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented highlighting the advantages of distributed amplifier approach compared to the conventional single power source designs.

Anzic, G.↗
NASA NTRS1980

NASA Global Atmospheric Sampling Program (GASP) data report for tape VL0014

The data currently available from GASP, including flight routes and dates, instrumentation, data processing procedures, and data tape specifications are described. Measurements of atmospheric ozone, cabin ozine, carbon monoxide, water vapor, particles, clouds, condensation nuclei, filter samples and related meteorological and flight information obtained during 562 flights of aircraft N533PA, N4711U, N655PA, and VH-EBE from October 3, 1977 through January 5, 1978 are reported. Data representing tropopause pressures obtained from time and space interpolation of National Meteorological Center archived data for the dates of the flights are included.

Briehl, D.↗
NASA NTRS1980

Proton radiation damage in bulk n-GaAs

Bulk samples of Te-doped n-type GaAs were irradiated using 10 MeV to 24 MeV protons to fluences between 2 x 10 to the 11th power protons/sq cm and 2 x 10 to the 14th power protons/sq cm. Majority carrier electrical effects were measured using the vanderPauw techniques and it was observed that radiation damage was minimal at the 10 to the 11th power proton/sq cm fluence. For the higher fluences, carrier removal was proportional to Delta E/Delta x for the protons indicating ionization interactions between the protons and atoms. Thermal annealing was observed at 155 C.

Liu, D. C.↗
NASA NTRS1972

Gadolinium-hydrogen ion exchange of zirconium phosphate

The Gd(+3)/H(+) ion exchange on a commercial zirconium phosphate ion exchanger was investigated in chloride, sulfate, and phosphate solutions of Gd(+3) at gadolinium concentrations of 0.001 to 1 millimole per cc and in the pH range of 0 to 3.5. Relatively low Gd(+3) capacities, in the range of 0.01 to 0.1 millimole per g of ion exchanger were found at room temperature. A significant difference in Gd(+3) sorption was observed, depending on whether the ion exchanger was converted from initial conditions of greater or lesser Gd(+3) sorption than the specific final conditions. Correlations were found between decrease in Gd(+3) capacity and loss of exchanger phosphate groups due to hydrolysis during washing and between increase in capacity and treatment with H3PO4. Fitting of the experimental data to ideal ion exchange equilibrium expressions indicated that each Gd(+3) ion is sorbed on only one site of the ion exchanger. The selectivity quotient was determined to be 2.5 + or - 0.4 at room temperature on gadolinium desorption in chloride solutions.

Liu, D. C.↗