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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Piezoresistance and hole transport in beryllium-doped silicon.

The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Littlejohn, M. A.↗
NASA NTRS1972

Investigation of the plastic fracture of high strength steels

An investigation of the plastic fracture process to improve tensile strength in high strength steels is presented. Two generic types of steels are considered: a quenched and tempered grade and a maraging grade, in order to compare two different matrix microstructures. Each type of steel was studied in commercial grade purity and in special melted high purity form, low in residual and impurity elements. The specific alloys dealt with include AISI 4340 and 18 Ni, 200 grade maraging steel, both heat treated to the same yield strength level of approximately 200 ksi.

Cox, T. B.↗
NASA NTRS1974

Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Robertson, J. B.↗
NASA NTRS1983

Cathode degradation and erosion in high pressure arc discharges

The various processes which control cathode erosion and degradation were identified and evaluated. A direct current arc discharge was established between electrodes in a pressure-controlled gas flow environment. The cathode holder was designed for easy testing of various cathode materials. The anode was a water cooled copper collector electrode. The arc was powered by a dc power supply with current and voltage regulated cross-over control. Nitrogen and argon were used as propellants and the materials used were two percent thoriated tungsten, barium oxide impregnated porous tungsten, pure tungsten and lanthanum hexaboride. The configurations used were cylindrical solid rods, wire bundles supported by hollow molybdenum tubes, cylindrical hollow tubes, and hollow cathodes of the type used in ion thrusters. The results of the mass loss tests in nitrogen indicated that pure tungsten eroded at a rate more than 10 times faster than the rates of the impregnated tungsten materials. It was found that oxygen impurities of less than 0.5 percent in the nitrogen increased the mass loss rate by a factor of 4 over high purity nitrogen. At power levels less than 1 kW, cathode size and current level did not significantly affect the mass loss rate. The hollow cathode was found to be operable in argon and in nitrogen only at pressures below 400 and 200 torr, respectively.

Hardy, T. L.↗
NASA NTRS1984

Cathode degradation and erosion in high pressure arc discharges

The various processes which control cathode erosion and degradation were identified and evaluated. A direct current arc discharge was established between electrodes in a pressure-controlled gas flow environment. The cathode holder was designed for easy testing of various cathode materials. The anode was a water cooled copper collector electrode. The arc was powered by a dc power supply with current and voltage regulated cross-over control. Nitrogen and argon were used as propellants and the materials used were two percent thoriated tungsten, barium oxide impregnated porous tungsten, pure tungsten and lanthanum hexaboride. The configurations used were cylindrical solid rods, wire bundles supported by hollow molybdenum tubes, cylindrical hollow tubes, and hollow cathodes of the type used in ion thrusters. The results of the mass loss tests in nitrogen indicated that pure tungsten eroded at a rate more than 10 times faster than the rates of the impregnated tungsten materials. It was found that oxygen impurities of less than 0.5 percent in the nitrogen increased the mass loss rate by a factor of 4 over high purity nitrogen. At power levels less than 1 kW, cathode size and current level did not significantly affect the mass loss rate. The hollow cathode was found to be operable in argon and in nitrogen only at pressures below 400 and 200 torr, respectively.

Hardy, T. L.↗
NASA NTRSDate not supplied

Real Time Nitrogen Monitoring and Quality Control System for NASA Astromaterials Collection

The Nitrogen system is a vital utility supporting the curation office within NASA's Astromaterials Re-search and Exploration Science (ARES) Division at the Johnson Space center (JSC). Since the Apollo samples were returned in 1969. It has played an essential role in preserving NASA’s astromaterial collections (now nine collections) by maintaining contamination-free, controlled environments required for long term curation and advanced scientific research. To meet the stringent purity requirements for contamination control, high purity modified Grade C Liquid Nitrogen (LN2) is delivered weekly by an industrial gas vendor to a 15,000-gallon tank located outside at NASA JSC near the ARES facility. This nitrogen is vital for creating an inert atmosphere to store the collection in, ensuring they are continuously shielded from contaminants and alterations through a constant N2purge. For most of the past 65 years deliveries of LN2 have required a CoA (Certificate of Analysis) prior to delivery. If those were not available, then LN2 deliver were sent to third-party laboratories for verification, creating an operational bottleneck and quality gap. To address this challenge and maintain rigorous quality control, NASA JSC Infrastructure and Astromaterials Acquisition & Curation Office initiated the development of an on-site Analytical Gas Sampling (AGS) Laboratory. Designed to streamline quality verification if a CoA unavailable, the AGS lab was constructed by a subcontractor in Newton, NJ. After a successful factory acceptance test conducted by the NASA ARES Infrastructure team, the lab was trans-ported to NASA JSC, where it was anchored and integrated into the site’s nitrogen pressure system using stainless steel, oxygen-cleaned tubing. The ARES nitrogen system was modified to provide parallel flows to the AGS lab for quality control and to the astromaterials collection labs for maintaining an inert environment. The AGS lab features two operational modes: (1)Primary: Gaseous Nitrogen (GN2) Quality Monitoring –The AGS system continuously samples the site’s GN2 supply every 15 minutes to ensure compliance with required purity levels. (2) Secondary: LN2 Quality Verification when a comprehensive CoA is not available, a cryogenic vaporizer converts LN2 to GN2, which is then analyzed for impurities: H₂, Ar, O₂, CO, CO₂, H₂O, and total hydrocarbons (THC). By significantly enhancing on-site analytical capabilities, the AGS lab eliminates reliance on external testing, ensures uninterrupted quality monitoring of the nitrogen pressure system, and reinforces NASA’s commitment to preserving pristine astromaterials under the highest standards of curation and research integrity.

glove box↗
NASA NTRS1984

New electron trap in p-type Czochralski silicon

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Mao, B.-Y.↗
NASA NTRS1992

Numerical studies of convective transport associated with crystal growth in mirrogravity

Information on numerical studies of convective transport associated with crystal growth in microgravity is given in viewgraph form. Inferences drawn from the research are that protein crystals seem to grow at much larger relative supersaturations than small molecule crystals; growth rate is limited by attachment kinetics more than by transport; attachment kinetics are apparently influenced by convective flows, although the mechanism is uncertain; acceleration levels required to achieve D/L growth within Space Station Freedom specifications may not be achievable on manned vehicles; and D/L transport can help minimize incorporation of impurities, but growth cessation cannot be explained.

Ramachandran, N.↗
NASA NTRS1997

Strain Aging Behavior in NiAl Microalloyed with Interstitial and Substitutional Solutes

Dynamic strain aging has been investigated in polycrystalline NiAl alloys containing combined additions of interstitial and substitutional impurities. The results indicate that strain aging can be enhanced in polycrystalline alloys containing concentrations of silicon or iron in excess of 0.15 at.% in addition to conventional levels of carbon. This co-doping leads to very dramatic strain aging events, comparable to those typically observed in single crystals. This effect will be discussed with respect to conventional theories of strain aging.

Weaver, M. L.↗
NASA NTRS2014

Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

Hoenk, Michael E.↗
NASA NTRS1984

Generation-recombination noise in extrinsic photoconductive detectors

A theory of generation-recombination noise is presented and applied to the analysis of the performance limitations of extrinsic photoconductive detectors. The theory takes account both of the photoinduced generation of carriers and of thermal generation that is due to the finite temperature of the detector. Explicit formulas are derived that relate the detector response time, responsivity, and noise equivalent power to the material properties of the photoconductor (such as the presence of compensating impurities) and to the detector's operating conditions, such as its temperature and the presence of background radiation. The detector's performance is shown to degrade at high background levels because of saturation effects.

Brukilacchio, T. J.↗
NASA NTRS2005

Nickel Base Superalloy Turbine Disk

A low solvus, high refractory alloy having unusually versatile processing mechanical property capabilities for advanced disks and rotors in gas turbine engines. The nickel base superalloy has a composition consisting essentially of, in weight percent, 3.0-4.0 N, 0.02-0.04 B, 0.02-0.05 C, 12.0-14.0 Cr, 19.0-22.0 Co, 2.0-3.5 Mo, greater than 1.0 to 2.1 Nb, 1.3 to 2.1 Ta,3.04.OTi,4.1 to 5.0 W, 0.03-0.06 Zr, and balance essentially Ni and incidental impurities. The superalloy combines ease of processing with high temperature capabilities to be suitable for use in various turbine engine disk, impeller, and shaft applications. The Co and Cr levels of the superalloy can provide low solvus temperature for high processing versatility. The W, Mo, Ta, and Nb refractory element levels of the superalloy can provide sustained strength, creep, and dwell crack growth resistance at high temperatures.

Gabb, Timothy P.↗
NASA NTRS1981

Fuel quality/processing study. Volume 4: On site processing studies

Fuel treated at the turbine and the turbine exhaust gas processed at the turbine site are studied. Fuel treatments protect the turbine from contaminants or impurities either in the upgrading fuel as produced or picked up by the fuel during normal transportation. Exhaust gas treatments provide for the reduction of NOx and SOx to environmentally acceptable levels. The impact of fuel quality upon turbine maintenance and deterioration is considered. On site costs include not only the fuel treatment costs as such, but also incremental costs incurred by the turbine operator if a turbine fuel of low quality is not acceptably upgraded.

Jones, G. E., Jr.↗
NASA NTRS1986

Impurity effects in silicon for high efficiency solar cells

Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

Hopkins, R. H.↗
NASA NTRS1996

Electronic Characterization of Defects in Narrow Gap Semiconductors-Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide

We have used a Green's function technique to calculate the energy levels and formation energy of deep defects in the narrow gap semiconductors mercury cadmium telluride (MCT), mercury zinc telluride (MZT) and mercury zinc selenide (MZS). The formation energy is calculated from the difference between the total energy with an impurity cluster and the total energy for the perfect crystal. Substitutional (including antisite), interstitial (self and foreign), and vacancy deep defects are considered. Relaxation effects are calculated (with molecular dynamics). By use of a pseudopotential, we generalize the ideal vacancy model so as to be able to consider relaxation for vacancies. Different charge states are considered and the charged state energy shift (as computed by a modified Haldane-Anderson model) can be twice that due to relaxation. Different charged states for vacancies were not calculated to have much effect on the formation energy. For all cases we find deep defects in the energy gap only for cation site s-like orbitals or anion site p-like orbitals, and for the substitutional case only the latter are appreciably effected by relaxation. For most cases for MCT, MZT, MZS, we consider x (the concentration of Cd or Zn) in the range appropriate for a band gap of 0.1 eV. For defect energy levels, the absolute accuracy of our results is limited, but the precision is good, and hence chemical trends are accurately predicted. For the same reason, defect formation energies are more accurately predicted than energy level position. We attempt, in Appendix B, to calculate vacancy formation energies using relatively simple chemical bonding ideas due to Harrison. However, these results are only marginally accurate for estimating vacancy binding energies. Appendix C lists all written reports and publications produced for the grant. We include abstracts and a complete paper that summarizes our work which is not yet available.

Patterson, James D.↗
NASA NTRS1985

Oxygen and carbon impurities and related defects in silicon

Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

Pearce, C. W.↗
NASA NTRS1986

Effects of impurities on silicon solar-cell performance

Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

Hopkins, R. H.↗
NASA NTRS1983

A potential-energy scaling model to simulate the initial stages of thin-film growth

A solid on solid (SOS) Monte Carlo computer simulation employing a potential energy scaling technique was used to model the initial stages of thin film growth. The model monitors variations in the vertical interaction potential that occur due to the arrival or departure of selected adatoms or impurities at all sites in the 400 sq. ft. array. Boltzmann ordered statistics are used to simulate fluctuations in vibrational energy at each site in the array, and the resulting site energy is compared with threshold levels of possible atomic events. In addition to adsorption, desorption, and surface migration, adatom incorporation and diffusion of a substrate atom to the surface are also included. The lateral interaction of nearest, second nearest, and third nearest neighbors is also considered. A series of computer experiments are conducted to illustrate the behavior of the model.

Heinbockel, J. H.↗