Short-range He-Xe interaction from molecular-beam scattering
Explore the source record for details and available documents.
Amdur, I.↗
SEARCH · Search NASA
Results for “MOLECULAR BEAM”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Molecular beam generator
Vacuum deposition generator has nozzle and aperature designed especially for beams of heavy organic molecules. Deposition rates are from 6 to 15 angstroms per minute.
Richmond, R. G.↗
Short-range interactions for SF6 and CF4 with He and Ar from molecular-beam scattering
Explore the source record for details and available documents.
Amdur, I.↗
Orbiting molecular-beam laboratory
The composition of the atmosphere within the planned orbital envelope of the Space Shuttle and the velocity necessary to maintain a stable orbit within that envelope provide unique conditions for forming a high-purity, moderate energy beam (about 5 eV) of atomic oxygen. At 500 km, for example, atomic oxygen comprises approximately 90% of the atmosphere. Since the mean thermal speed of the ambient atomic oxygen is substantially less than the orbital speed, a high-purity beam can be generated by sweeping through the gas with a series of beam-forming truncated conical shells. Characteristics of the beam, including energy distribution, flux, and purity variation with orbital altitude and methods for lowering the mean energy, are presented. Gas-surface interaction experiments that have been proposed for this laboratory are also discussed.
Outlaw, R. A.↗
Molecular beam facility for studying mass spectrometer performance
An apparatus which produces neutral gas beams in the velocity range from thermal to 6 km/s makes possible studies simulating the motion of instruments through tenuous atmospheres. Use of the apparatus in studying the response of an open-source mass spectrometer is examined. Experiments performed include responses when the instrument is in a normal mode of operation, when the ion source potentials are adjusted to reject striking gas particles, when the beam is restricted so that portions of the ion source are struck, and when the beam strikes at angles other than normal incidence. Results indicate specular radiation of particles out of the source and stagnation ratios close to unity for normal operation. Retarding potential studies dropped the sensitivity by a factor of about 10, and as angles of attack are varied, the effect was found to depend upon beam velocity and the way the ions are initially accelerated.
Ballenthin, J. O.↗
Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms
Explore the source record for details and available documents.
Lewis, B. F.↗
Low-loss optical waveguides made with molecular beam epitaxial In(0.012)Ga(0.988)As and In(0.2)Ga(0.8)As-GaAs superlattices
Low-loss optical guiding in In-doped GaAs is demonstrated for the first time. Ridge waveguides are made with single In(0.012)Ga(0.988)As ternary layers and In(0.2)Ga(0.8)As-GaAs superlattices. Attenuation constants of about 1.3 dB/cm are measured and the principal loss mechanism is identified to be scattering at the ridge walls. It is expected that improved fabrication techniques will lead to guides with attenuation less than or equal to 0.5 dB/cm.
Das, U.↗
Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures
The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.
Radulescu, D. C.↗
Measuring Incorporation Of Arsenic In Molecular-Beam Expitaxy
Changes in surface layers cause oscillations in RHEED measurements. Specular RHEED Beam intensity measured before, during, and after deposition of seven to eight monomolecular layers of gallium during 1.5 seconds. Arsenic pressure was 1.7x10 to the negative seventh power torr (2.3x10 to the negative fifth power Pa) throughout measurements.
Lewis, Blair F.↗
Molecular-beam epitaxy of CrSi2 on Si(111)
The growth of CrSi2 on Si(111) in a commercial MBE system with a base pressure in the low 10 to the -11th torr range is reported. CrSi2 layers grown on Si(111) exhibit a strong tendency to form islands. Two particular epitaxial relationships are identified. Thick (210 nm) layers have been grown by four different techniques, with best results obtained by codepositing Cr and Si at elevated temperature. The grain size is observed to increase with substrate temperature, reaching 1-2 microns in a layer deposited at 825 C.
Fathauer, R. W.↗
Barrier height enhancement of InP-based n-Ga(0.47)In(0.53)As Schottky-barrier diodes grown by molecular beam epitaxy
Barrier height enhancement of an InP-based p(+)n-Ga(0.47)In(0.53)As Schottky diode grown by MBE has been demonstrated for infra-red photodetector applications. A barrier height of 0.35 eV for n-Ga(0.47)In(0.53)As Schottky barrier diodes, was increased to the effective barrier height of 0.55 eV, with a p(+)-Ga(0.47)In(0.53)As surface layer of 30 nm thick. The results show a reverse leakage current density of 0.0015 A/sq cm and a junction capacitance of 0.3 pF, which are comparable to those of p-Ga(0.47)In(0.53)As Schottky-barrier diodes at a reverse bias voltage of 5 V.
Kim, J. H.↗
Characterization of GaAlAs optical waveguide heterostructures grown by molecular beam epitaxy
Multiple-layer GaAlAs optical waveguide heterostructures have been grown by MBE. These samples were designed to operate at 840 nm with negligible coupling of guided light to the absorbing GaAs substrate. The Al concentration was 13 percent for the guiding layer and was 16 percent for the cladding layers. The process for growing waveguide layers was calibrated primarily by high-energy electron diffraction, with the optical quality confirmed by photoluminescence measurements. Channel waveguide structures having widths of 5 microns were etched in a low-pressure magnetically confined multipolar plasma reactor. The resulting waveguide structures were characterized by Raman spectroscopy, ellipsometry, AES, and optical-waveguide loss measurements.
Radens, C. J.↗
Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy
The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by an Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.
Fathauer, R. W.↗
Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy
Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated.
Fathauer, R. W.↗
Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si
The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.
Lao, Pudong↗
Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy
The preparation of hydrogen-terminated silicon surfaces for use as starting substrates for low-temperature MBE growth is examined in detail. The procedure involves the ex situ removal under nitrogen of residual oxide from a silicon substrate using a spin-clean with HF in ethanol, followed by the in situ low-temperature desorption (150 C) of physisorbed etch residues. The critical steps and the chemical basis for these steps are examined using X-ray photoelectron spectroscopy. Impurity residues at the epilayer-substrate interface following subsequent homoepitaxial growth are studied using AES, SIMS and TEM. Finally, scanning tunneling microscopy is used to examine the effect of cleaning methods on substrate morphology.
Grunthaner, P. J.↗
Energetics of molecular-beam epitaxy models
The removal energies of constituent atoms from various unreconstructed semiconductor surfaces are calculated using a Green function method. An efficient difference-equation approach within the second-neighbor tight-binding model is employed. For a compound AB, binding energies for the A and B atoms on the (111), (-1 -1 -1), (100), and (110) surfaces are calculated. Analyses are made of the energy to remove an atom from the nearly full surface and from the nearly empty surface. Results are presented for Si, GaAs, CdTe, and HgTe; and the surface sublimation energies are found to depend on surface coverage and do not display a simple linear relationship to the number of bonds broken, as is often assumed in modeling growth by MBE.
Krishnamurthy, Srinivasan↗
Theoretical studies of a molecular beam generator
The following is a proposed baseline model that is being developed for the simulation of hydrodynamic generator, which can be converted at a later date to magnetohydrodynamic MHD thruster by adding the necessary electric and magnetic fields. The following development will include the electric and magnetic terms, however, the initial computer program will not include these terms. The analysis that follows is a one species, single temperature model constructed over a domain that is defined by an enclosed region.
Heinbockel, John H.↗