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Results for “Photonic integrated circuits”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A Dynamically-Reconfigurable Burst-Mode Link Using a Nanosecond Photonic Switch

Fast optical circuit switching has great potential to solve scaling issues with traditional packet-switch based networks and improve bandwidth and power efficiency in datacenter and high-performance computing applications. One difficultly in utilizing a fast optical switch is that the optical signal must be rapidly reacquired after each switching event so as to not significantly impact the overall throughput of the system. In this work we present a system-level integration of a nanosecond-scale $2 \times 2$ silicon photonic switch with a 25-Gbps burst-mode receiver that can lock in 31 ns. A novel FPGA-based control plane was used to generate test data, control the silicon photonic switch and burst-mode receiver, and measure bit errors at 12.5 and 20 Gbps. Error-free links (BER $< 10^{-12}$ ) with system-level reconfiguration times below 60 ns (at 20 Gbps) and 90 ns (at 12.5 Gbps) including bit- and frame-synchronization are demonstrated.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Demonstration of a MOT in a sub-millimeter membrane hole

Abstract We demonstrate the generation of a cold-atom ensemble within a sub-millimeter diameter hole in a transparent membrane, a so-called “membrane MOT”. With a sub-Doppler cooling process, the atoms trapped by the membrane MOT are cooled down to 10 $$\upmu$$ μ K. The atom number inside the unbridged/bridged membrane hole is about $$10^4$$ 10 4 to $$10^5$$ 10 5 , and the $$1/e^2$$ 1 / e 2 -diameter of the MOT cloud is about 180 $$\upmu$$ μ m for a 400 $$\upmu$$ μ m-diameter membrane hole. Such a membrane device can, in principle, efficiently load cold atoms into the evanescent-field optical trap generated by the suspended membrane waveguide for strong atom-light interaction and provide the capability of sufficient heat dissipation at the waveguide. This represents a key step toward the photonic atom trap integrated platform (ATIP).

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

On-chip frequency-bin quantum photonics

Abstract Frequency-bin encoding furnishes a compelling pathway for quantum information processing systems compatible with established lightwave infrastructures based on fiber-optic transmission and wavelength-division multiplexing. Yet although significant progress has been realized in proof-of-principle tabletop demonstrations, ranging from arbitrary single-qubit gates to controllable multiphoton interference, challenges in scaling frequency-bin processors to larger systems remain. In this Perspective, we highlight recent advances at the intersection of frequency-bin encoding and integrated photonics that are fundamentally transforming the outlook for scalable frequency-based quantum information. Focusing specifically on results on sources, state manipulation, and hyperentanglement, we envision a possible future in which on-chip frequency-bin circuits fulfill critical roles in quantum information processing, particularly in communications and networking.

electro-optic modulators↗
DOE OSTI2024

A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond

Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specific integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifiers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verified using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.

Fredenburg, Jeff↗
DOE OSTI2024

A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond Timing

Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specifc integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verifed using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.

Fredenburg, Jeff↗
DOE OSTI2021

Recent Advances in Vertically Aligned Nanocomposites with Tunable Optical Anisotropy: Fundamentals and Beyond

Developing reliable and tunable metamaterials is fundamental to next-generation optical-based nanodevices and computing schemes. In this review, an overview of recent progress made with a unique group of ceramic-based functional nanocomposites, i.e., vertically aligned nanocomposites (VANs), is presented, with the focus on the tunable anisotropic optical properties. Using a self-assembling bottom-up deposition method, the as-grown VANs present great promise in terms of structural flexibility and property tunability. Such broad tunability of functionalities is achieved through VAN designs, material selection, growth control, and strain coupling. The as-grown multi-phase VAN films also present enormous advantages, including wafer scale integration, epitaxial quality, sharp atomic interface, as well as designable materials and geometries. This review also covers the research directions with practical device potentials, such as multiplex sensing, high-temperature plasmonics, magneto-optical switching, as well as photonic circuits.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Fault localization in a microfabricated surface ion trap using diamond nitrogen-vacancy center magnetometry

Here, as quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred, with likely integrated photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared them to intentionally created faults, finding that the root cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Strong Photon‐Magnon Coupling Using a Lithographically Defined Organic Ferrimagnet

Abstract A cavity‐magnonic system composed of a superconducting microwave resonator coupled to a magnon mode hosted by the organic‐based ferrimagnet vanadium tetracyanoethylene (V[TCNE] x ) is demonstrated. This work is motivated by the challenge of scalably integrating a low‐damping magnetic system with planar superconducting circuits. V[TCNE] x has ultra‐low intrinsic damping, can be grown at low processing temperatures on arbitrary substrates, and can be patterned via electron beam lithography. The devices operate in the strong coupling regime, with a cooperativity exceeding 1000 for coupling between the Kittel mode and the resonator mode at T≈0.4 K, suitable for scalable quantum circuit integration. Higher‐order magnon modes are also observed with much narrower linewidths than the Kittel mode. This work paves the way for high‐cooperativity hybrid quantum devices in which magnonic circuits can be designed and fabricated as easily as electrical wires.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Strategies for on-chip digital data compression for X-ray pixel detectors

Here, the continued desire for X-ray pixel detectors with higher frame rates will stress the ability of application-specific integrated circuit (ASIC) designers to provide sufficient off-chip bandwidth to reach continuous frame rates in the 1 MHz regime. To move from the current 10 kHz to the 1 MHz frame rate regime, ASIC designers will continue to pack as many power-hungry high-speed transceivers at the periphery of the ASIC as possible. In this paper, however, we present new strategies to make the most efficient use of the off-chip bandwidth by utilizing data compression schemes for X-ray photon-counting and charge-integrating pixel detectors. In particular, we describe a novel in-pixel compression scheme that converts from analog to digital converter units to encoded photon counts near the photon Poisson noise level and achieves a compression ratio of >1.5x independent of the dataset. In addition, we describe a simple yet efficient zero-suppression compression scheme called "zeromask" (ZM) located at the ASIC's edge before streaming data off the ASIC chip. ZM achieves average compression ratios of >4x, >7x, and >8x for high-energy X-ray diffraction, ptychography, and X-ray photon correlation spectroscopy datasets, respectively. We present the conceptual designs, register-transfer level block diagrams, and the physical ASIC implementation of these compression schemes in 65 nm CMOS. When combined, these two digital compression schemes could increase the effective off-chip bandwidth by a factor of 6-12x.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Multicycle flash sintering of cubic Y 2 O 3 -stabilized ZrO 2 : An in situ energy dispersive synchrotron x-ray diffraction study with high temporal resolution

The current induced unit cell volume changes, (111) Bragg peak full width at half maximum (FWHM) and its integrated intensity in 8 % Y 2 O 3 stabilized ZrO 2 (8 %YSZ) solid state electrolyte was monitored during a triple-flash sintering experiment by in situ energy dispersive x-ray diffraction using a polychromatic synchrotron probe (max, photon energy 200 keV) with 2 second temporal resolution. The first spontaneous singularity in the unit cell volume (+0.54 %) was observed at 899 °C under 15 V/mm applied field intensity, which was associated with 13 mA/mm 2 current draw and an increase in density to 97 %. Following anelastic relaxation of the unit cell volume under open circuit conditions, the same applied field was applied twice in a row which resulted in additional induced singularities at 925 °C (+0.48 %) and 944 °C (+0.42 %). A floating baseline, which was above the thermal expansion baseline, was observed from 833 to 969 °C and was attributed to Joule heating. In conclusion, the singularity at 899 °C is associated with a sharp change in (111) FWHM and a 34 % decrease in integrated peak area that was attributed to changes in the distribution of oxygen vacancies and the changes in their concentration as induced by the applied field in the spontaneous transient stage of flash sintering.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Light-field control of real and virtual charge carriers

We report light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone, it is referred to as virtual, whereas the population that remains excited is called real. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption, but photocurrent generation may stem from real as well as virtual charge carriers. However, a link between the generation of the carrier types and their importance for observables of technological relevance is missing. Here we show that real and virtual charge carriers can be excited and disentangled in the optical generation of currents in a gold–graphene–gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, whereas virtual carriers generate a polarization response read out at the gold–graphene interfaces. On the basis of these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type of carrier will markedly increase the integrated-circuit design space and bring petahertz signal processing closer to reality.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Final Report for Grant

This is the final report for this project. The major objectives were to develop full models and standard cells of CMOS silicon photomultipliers (SiPM) for neutron detection applications. Specifically, the research seeks to replace photomultiplier tubes, used in neutron detection applications, with SiPMs containing integrated readout electronics fabricated in standard CMOS processes. The detectors improve on the detection efficiency, readout speed, resolution (sensitivity), and spatial resolution of current systems. In particular, this work involved collaboration with the instrument and detector group at ORNL who build detectors based on discrete commercially available PMTs and SiPMs. The SiPM detectors developed in this work are based on Perimeter Gated Single Photon Avalanche Diodes (PGSPAD). These devices have tunable breakdown voltage which affects other performance characteristics of the detectors. The ability of the detectors to have integrated readout and tune the noise floor and dynamic range in addition to offering a method for non-uniformity compensation in a compact form significantly impacts the imaging research field and includes the nuclear sciences field, circuits and systems field in addition to varied fields such as geography and biology/medicine.

42 ENGINEERING↗
DOE OSTI2022

Coherent Coupling of Two Remote Magnonic Resonators Mediated by Superconducting Circuits

We demonstrate microwave-mediated distant magnon-magnon coupling on a superconducting circuit platform, incorporating chip-mounted single-crystal Y 3 Fe 5 O 12 (YIG) spheres. Coherent level repulsion and dissipative level attraction between the magnon modes of the two YIG spheres are demonstrated. The former is mediated by cavity photons of a superconducting resonator, and the latter is mediated by propagating photons of a coplanar waveguide. Overall, our results open new avenues toward exploring integrated hybrid magnonic networks for coherent information processing on a quantum-compatible superconducting platform.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Quantum Engineering With Hybrid Magnonic Systems and Materials (Invited Paper)

Quantum technology has made tremendous strides over the past two decades with remarkable advances in materials engineering, circuit design and dynamic operation. In particular, the integration of different quantum modules has benefited from hybrid quantum systems, which provide an important pathway for harnessing the different natural advantages of complementary quantum systems and for engineering new functionalities. This review focuses on the current frontiers with respect to utilizing magnetic excitations or magnons for novel quantum functionality. Magnons are the fundamental excitations of magnetically ordered solid-state materials and provide great tunability and exibility for interacting with various quantum modules for integration in diverse quantum systems. The concomitant rich variety of physics and material selections enable exploration of novel quantum phenomena in materials science and engineering. In addition, the relative ease of generating strong coupling and forming hybrid dynamic systems with other excitations makes hybrid magnonics a unique platform for quantum engineering. We start our discussion with circuit-based hybrid magnonic systems, which are coupled with microwave photons and acoustic phonons. Subsequently, we are focusing on the recent progress of magnon-magnon coupling within confined magnetic systems. Next we highlight new opportunities for understanding the interactions between magnons and nitrogen-vacancy centers for quantum sensing and implementing quantum interconnects. Lastly, we focus on the spin excitations and magnon spectra of novel quantum materials investigated with advanced optical characterization.

42 ENGINEERING↗
DOE OSTI2026

Characterization of Digital Silicon Photomultipliers

Digital Silicon photomultipliers (Digital SiPMs) have become an increasingly viable option for single-photon detection due to their compact size and precise timing and resolution. The following work characterizes the noise performance of a diSiPM designed and tested in-house at Fermilab. The SiPM consists of a 26x32 array of single-photon avalanche diode (SPAD) cells. Through the implementation of a shift register masking circuit, individual SPAD cells can be enabled and disabled at will, allowing for precise detection measurements of single columns (accumulator channels) and cells. The provided circuit design operates on voltage clock pulses and collects data on clock edges allowing for precise tuning of the data collection process by varying the clock frequency, pulse width, and integration period.

Shoemaker, Oliver [U. Chicago (main)]↗
DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Cryogenic hybrid magnonic circuits based on spalled YIG thin films

Yttrium iron garnet (YIG) magnonics has garnered significant research interest because of the unique properties of magnons (quasiparticles of collective spin excitation) for signal processing. In particular, hybrid systems based on YIG magnonics show great promise for quantum information science due to their broad frequency tunability and strong compatibility with other platforms. However, their broad applications have been severely constrained by substantial microwave loss in the gadolinium gallium garnet (GGG) substrate at cryogenic temperatures. In this study, we demonstrate that YIG thin films can be spalled from YIG/GGG samples. Our approach is validated by measuring hybrid devices comprising superconducting resonators and spalled YIG films, which exhibit anti-crossing features that indicate strong coupling between magnons and microwave photons. Such new capability of separating YIG thin films from GGG substrates via spalling and the integrated superconductor-YIG devices represent a significant advancement for integrated magnonic devices, paving the way for advanced magnon-based coherent information processing.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-performance photonic transformers for DC voltage conversion

Abstract Direct current (DC) converters play an essential role in electronic circuits. Conventional high-efficiency DC voltage converters, especially step-up type, rely on switching operation, where energy is periodically stored within and released from inductors and/or capacitors connected in a variety of circuit topologies. Since these energy storage components, especially inductors, are fundamentally difficult to scale down, miniaturization of switching converters proves challenging. Furthermore, the resulting switching currents produce significant electromagnetic noise. To overcome the limitations of switching converters, photonic transformers, where voltage conversion is achieved through light emission and detection processes, have been demonstrated. However, the demonstrated efficiency is significantly below that of the switching converter. Here we perform a detailed balance analysis and show that with a monolithically integrated design that enables efficient photon transport, the photonic transformer can operate with a near-unity conversion efficiency and high voltage conversion ratio. We validate the theory with a transformer constructed with off-the-shelf discrete components. Our experiment showcases near noiseless operation and a voltage conversion ratio that is significantly higher than obtained in previous photonic transformers. Our findings point to the possibility of a high-performance optical solution to miniaturizing DC power converters and improving the electromagnetic compatibility and quality of electrical power.

42 ENGINEERING↗