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At least 163 records · Page 9

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NASA NTRS1981

Giant glitches and pinned vorticity in the Vela and other pulsars

Previously unexamined regularities in the Vela pulsar timing data are noted, and explained by a theory of giant glitches in the Vela and other pulsars as the dynamic consequence of catastrophic unpinning events in the pinned crustal neutron superfluid. Postglitch behavior then results from the glitch-induced vortex creep. An implication of the theory is that the energy release in this glitch scenario need not appear instantaneously on the surface as heat.

Alpar, M. A.↗

NASA NTRS1984

Wire Retrieves Broken Pin

Safety wire retains pieces of broken tool. Retrieval wire running through shaft of tool used to pull pieces of tool out of hole, should tool break during use. Safety wire concept suitable for pins subject to deflection or breakage.

Burow, G. H.↗

NASA NTRS1984

Measuring Recessed Pins

Sleeve-and-rod-tool measures distances in blind locations. Developed for measuring small distance from top of pin to body holding it.

Kostas, C.↗

NASA NTRS1983

Stresses in a quasi-isotropic pin loaded connector using photoelasticity

Birefringent glass-epoxy and a numerical stress separation scheme are used to compute the stresses in the vicinity of a pin-loaded hole. The radial and circumferential stresses at the hole edge, and the net section and shear-out stresses are computed. The numerical and experimental results are compared with the computed stresses. The fixture used to load the connector is discussed and typical isochromatic and isoclinic fringe patterns are presented. The stress-separation scheme is briefly discussed.

Hyer, M. W.↗

NASA NTRS1984

Stresses in a quasi-isotropic pin-loaded connector using photoelasticity

Hyer, M. W.↗

NASA NTRS1984

Stresses in pin-loaded orthotropic plates using photoelasticity

The stresses in transparent glass-epoxy plates loaded by a steel pin through a hole were determined by photoelasticity. The stresses around the hole edge, across the net section, along the shear out line, and on the centerline below the hole for quasiisotropic, unidirectional, and angle ply plates are outlined. Stresses in an isotropic comparison specimen are also presented. Stress concentration factors for several locations around the plates are tabulated. The experimental apparatus and the experimental technique are discussed. The isochromatic and isoclinic fringe patterns for the four plates are shown. A description of the necessary photoelastic theory is appended.

Hyer, M. W.↗

NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗

NASA NTRS1985

Waveguide PIN junction electrooptic phase modulators Theoretical analysis and design criteria

Basic design equations for waveguide PIN heterojunction electrooptic phase modulators utilizing the linear electrooptic effect are derived, and criteria for optimum operation (in terms of obtainable phase shifts) are discussed. Although the numerical examples pertain to devices fabricated of the AlGaAs system on (100) substrates, the same method can be directly applied to modulators fabricated of other materials.

Marshall, W. K.↗

NASA NTRS1986

Finite-Element Fracture Analysis of Pins and Bolts

Stress intensities calculated in bending and tension. Finite-element stress-analysis method gives stress-intensity estimates for surface flaws on smooth and threaded round bars. Calculations done for purely tensile and purely bending loads. Results, presented in dimensionless form, useful for determining fatigue lives of bolts and pins.

Nord, K. J.↗

NASA NTRS1985

PIN photodiodes irradiated with 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Reft, C. S.↗

NASA NTRS1989

CdTe and ZnTe metal interface formation and Fermi-level pinning

Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.

Wahi, A. K.↗

NASA NTRS1990

Multi-Pinned-Phase Charge-Coupled Device

Multi-pinned-phase (MPP) technology allows charge-coupled device (CCD) to operate totally inverted during both integration and readout while maintaining other performance characteristics. MPP-CCD made with positive doping implants defining barrier phases. When all phases biased together into inversion, dark current reduced, and potential of charge-collecting wells is difference between potentials of barrier and collection phases. Advantages include complete elimination of residual image effects during integration and readout, low pixel nonuniformity, and increase in quantum efficiency in near infrared because higher operating temperatures used. More tolerant to ionizing radiation environments.

Janesick, James R.↗

NASA NTRS1989

Open pinned-phase CCD technology

A novel CCD technology, open pinned-phase (OPP) technology, is presented. Particular attention is given to the design and process features of an OPP-CCD that unite multi- and virtual-phase technologies. It is found that the OPP/CCD will produce a modest short-wavelength QE and excellent charge collection efficiency characteristics which are similar to those of the virtual-phase CCD. However, expensive processes related to thinning, backside accumulation, and packaging are not required in the present case.

Janesick, James↗

NASA NTRS1990

Proton radiation effects on multi-pinned-phased CCDs

Three Tektronix 1024 x 1024 multi-pinned-phased (MPP) charge coupled devices were irradiated with protons to obtain data on CCD performance degradation in a proton radiation environment. The devices were irradiated with a spectrum of energies up to 120 MeV, simulating the total radiation dose of a long-term space experiment. Basic parameters such as charge transfer efficiency, dark current, noise, and full well were measured before and after irradiation. A test was also performed to determine the effectiveness of various thicknesses of tantalum shielding in protecting the CCD from damage. Dark current increase and CTE degradation were the most noticeable effects of proton radiation. This paper will present the objectives, test data, and conclusions of the proton testing, and will identify future testing to be performed.

Murata-Seawalt, D.↗

NASA NTRS1992

Open-Pinned-Phase Charge-Coupled Device

Acceptable quantum efficiency obtained without back illumination and back-side thinning. NEW CCD technology referred to as "open-pinned-phase" (OPP) invented to unite best attributes of multiphase and virtual-phase technologies. Delivers high front-side sensitivity in conjunction with ultralow-signal-level performance.

Janesick, James R.↗

NASA NTRS1992

Channelized-Coplanar-Waveguide PIN-Diode Switches

Three positive/intrinsic/negative (PIN-diode) reflective CPW (coplanar waveguide) switches demonstrated. First includes series-mounted diode to bridge gap in center strip conductor of CPW. Second includes pair of diodes to short center strip conductor to ground planes. Third includes diode to switch between band-pass filter and notch filter. Isolation exceeds 20 dB, while insertion loss is less than 1 dB.

Ponchak, G. E.↗

NASA NTRS1992

Magnetically Operated Holding Plate And Ball-Lock Pin

Magnetically operated holding plate and ball-locking-pin mechanism part of object attached to, or detached from second object. Mechanism includes tubular housing inserted in hole in second object. Plunger moves inside tube forcing balls to protrude from sides. Balls prevent tube from sliding out of second object. Simpler, less expensive than motorized latches; suitable for robotics applications.

Monford, Leo G., Jr.↗

NASA NTRS1992

Stress concentrations for straight-shank and countersunk holes in plates subjected to tension, bending, and pin loading

A three dimensional stress concentration analysis was conducted on straight shank and countersunk (rivet) holes in a large plate subjected to various loading conditions. Three dimensional finite element analysis were performed with 20 node isoparametric elements. The plate material was assumed to be linear elastic and isotropic, with a Poisson ratio of 0.3. Stress concentration along the bore of the hole were computed for several ratios of hole radius to plate thickness (0.1 to 2.5) and ratios of countersink depth to plate thickness (0.25 to 1). The countersink angles were varied from 80 to 100 degrees in some typical cases, but the angle was held constant at 100 degrees for most cases. For straight shank holes, three types of loading were considered: remote tension, remote bending, and wedge loading in the hole. Results for remote tension and wedge loading were used to estimate stress concentration for simulated rivet in pin loading. For countersunk holes only remote tension and bending were considered. Based on the finite element results, stress concentration equations were developed. Whenever possible, the present results were compared with other numerical solutions and experimental results from the literature.

Shivakumar, K. N.↗