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At least 163 records · Page 9

Fabrication of single-crystalline YFeO3 films with large antiferromagnetic domains

The antiferromagnetic orthoferrite YFeO3 possesses fascinating magnetic properties for spintronics, such as terahertz spin dynamics, ultrafast domain wall motion, and long magnon decay length. YFeO3 belongs to a special family of antiferromagnets that show an unusually strong non-trivial Kerr response due to its weak ferromagnetism. The highly stable antiferromagnetic domains without any spontaneous spin rotation transitions below the 645 K Néel temperature may be useful for nanoscale device applications. We report the successful fabrication of high-quality twinning-free (110)-oriented YFeO3 films by pulsed laser deposition. Detailed structural and magnetic characterization revealed that the crystal structure and magnetic properties of the YFeO3 films are comparable to bulk single crystals. We show that the spin rotation under high magnetic fields follows the two-sublattice approximation model. The film surface is atomically flat with step-terrace surface morphology. A longitudinal magneto-optic Kerr (MOKE) rotation of 10 mdeg was observed at room temperature, which is consistent with earlier reports on bulk single crystals. The in-plane anisotropy of the Kerr response corresponds to the obtained magnetic anisotropy from the SQUID measurement. The large MOKE signal enables the imaging of antiferromagnetic domains and their reversal. The domain size was found to be larger than 100 μm. These high-quality YFeO3 thin films facilitate the fabrication of antiferromagnetic spintronic devices and provide a convenient platform for studying various spin-related phenomena in thin films and at interfaces.

Physics↗

Epitaxial stabilization and oxygen vacancy control of EuNiO 3 thin films

Rare-earth nickelates exhibit valuable behavior for neuromorphic computing at low temperature: Building blocks for biologically inspired microelectronic neurons like electrically driven insulator–metal transitions (IMTs), negative differential resistance, and self-oscillations have been shown up to 230 K for SmNiO 3 and NdNiO 3 . EuNiO 3 raises the IMT far above room temperature (460 K) but high-quality thin films are challenging to synthesize. Here, we explore the epitaxial stabilization of EuNiO 3 using pulsed laser deposition. X-ray diffraction reciprocal space maps, x-ray absorption spectroscopy, and transmission electron microscopy show that higher growth temperature (800 °C) reduces oxygen vacancy concentrations in EuNiO 3 . Pseudomorphic EuNiO 3 is demonstrated on both SrLaAlO 4 and NdGaO 3 substrates, and LaNiO 3 buffer layers are incorporated to facilitate future vertical device fabrication. In contrast to bulk thermodynamic predictions, the greater oxidation and crystallinity at higher temperature we observe indicates that epitaxial substrates can stabilize EuNiO 3 at O 2 pressures less than 1 atm.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Low damping (111) oriented lithium aluminum ferrite thin films for spin wave applications

Spin wave-based spintronics are an alternative to conventional electronics due to their potential for efficient energy consumption, improved processing speed, and smaller device dimensions. Low damping magnetic insulators provide the medium for efficient propagation of spin waves for information transfer. Here, we have synthesized by pulsed laser deposition epitaxial spinel structure ferrite thin films of Li 0.5 (Al 1.0 Fe 1.5 )O 4 (LAFO) on (111)-oriented MgAl 2 O 4 that support isotropic magnon propagation in the film plane. Our ferromagnetic resonance measurements show low magnetic damping with a typical Gilbert damping parameter of α = 0.006 and weak-spin–orbit coupling with g = 2.02. These films have low effective magnetization, μ o M eff = 20 mT, similar to that of yttrium iron garnet, the gold standard of low loss magnetic insulators. Our findings show that LAFO is a good candidate as a spin wave medium since it can be grown at low temperatures in different crystal orientations.

Takana, Lerato [Stanford Univ., CA (United States)↗

Growth and characterization of La 0.67 Sr 0.33 MnO 3 /YBa 2 Cu 3 O 7- δ bilayers

Understanding the interplay of ferromagnets and superconductors requires high quality interfaces. To this end, we have fabricated heterostructures of the cuprate superconductor YBa2Cu3O7-δ (YBCO) with the metallic ferromagnet La0.67Sr0.33MnO3 (LSMO) via pulsed laser deposition on SrTiO3 (STO) (001) and (LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) (001) substrates. By varying the YBCO thickness from 1.7-13.6 nm while keeping the LSMO thickness at 12 nm, we have studied the interplay between ferromagnetism and superconductivity in the in-plane transport and magnetic properties of the bilayers. X-ray reflectivity data indicate the presence of a 2-3 nm thick interfacial layer between the LSMO and YBCO layers in all heterostructures. In-plane transport measurements exhibit suppression of the superconducting transition temperature from bulk YBCO values. Magnetometry measurements indicate high LSMO saturation magnetization values for samples grown on STO substrates and even higher (bulk-like) magnetization for bilayers grown on LSAT substrates. Together these results indicate that the interdiffused layer is largely attributed to a modified YBCO layer.

36 MATERIALS SCIENCE↗

Deciphering phase evolution in complex metal oxide thin films via high-throughput materials synthesis and characterization

Discovery of structure-property relationships in thin film alloys of complex metal oxides enabled by high-throughput materials synthesis and characterization facilities is demonstrated here with a case-study. In this study, thin films of binary transition metal oxides (Ti–Zn) are prepared by pulsed laser deposition with continuously varying Ti:Zn ratio, creating combinatorial samples for exploration of the properties of this material family. The atomic structure and electronic properties are probed by spatially resolved techniques including x-ray absorption near edge structures (XANES) and x-ray fluorescence (XRF) at the Ti and Zn K-edge, x-ray diffraction, and spectroscopic ellipsometry. The observed properties as a function of Ti:Zn ratio are resolved into mixtures of five distinguishable phases by deploying multivariate curve resolution analysis on the XANES spectral series, under constraints set by results from the other characterization techniques. First-principles computations based on density function theory connect the observed properties of each distinct phase with structural and spectral characteristics of crystalline polymorphs of Ti–Zn oxide. Continuous tuning of the optical absorption edge as a function of Ti:Zn ratio, including the unusual observation of negative optical bowing, exemplifies a functional property of the film correlated to the phase evolution.

36 MATERIALS SCIENCE↗

Revealing Phase Heterogeneity in Vertically Aligned Nanocomposites via Plan-View Electron Energy Loss Spectroscopy

Hydrogen utilization in clean energy technologies is challenged by limited storage and transport within materials, owing to the complex hydrogen kinetics at interfaces [1]. Understanding these interfacial mechanisms at the nanoscale is crucial for developing improved materials for hydrogen applications, particularly proton-conducting fuel cells (PCFCs). Vertically aligned nanocomposites (VANs) grown by pulsed laser deposition (PLD) offer a unique platform for investigating the interfacial effects on hydrogen transport due to their well-defined interfaces parallel to the direction of charge transport [2-4]. To investigate hydrogen transport, the two phases within the VANs were chosen as BaZr 0.9 Y 0.1 O 3-x (BZY), a known proton conductor, and Pr 0.1 Ce 0.9 O 2-x (PCO), a mixed ionic-electronic conductor [5]. This PCO-BZY VANs architecture allows the investigation of how the interface between a proton conductor and a mixed conductor influences hydrogen transport. However, because of the small size of hydrogen, it is difficult to discern the nature of its interactions with interfaces from bulk measurements at the macroscale, thus necessitating nanoscale measurements [6]. Electron energy loss spectroscopy (EELS) allows for nanometer-resolution probing of the local atomic structure and chemistry at the BZY/PCO interface. In this study, plan-view analysis of PCO-BZY VANs films was employed to characterize the structure and phase distribution of the VANs and investigate the interface between the nanostructures. The films were imaged using scanning electron microscopy (SEM) in the Hitachi S-4800 SEM, collecting secondary electron images using mixed upper and lower detectors. Then, plan-view transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) EELS were employed using a JEOL ARM300 microscope operated at 300kV with a Gatan K3 GIF Continuum detector to study the distribution of the BZY and PCO phases through the film. As a result, spectrum images were acquired at a dispersion of 0.18eV per channel and denoised afterward by principal component analysis (PCA) method.

Griffin, Elizabeth [Northwestern University, Evans↗

How Interface Evolution at the Nanoscale Dictates Protonic Ceramic Cell Behavior

Understanding the effects of heterointerfaces in nanodevices remains a challenge in interface engineering for systems applied in solid oxide fuel cells, catalysis, sensors, and memristors [1]. Previous studies have shown that the presence of interfaces in ceramic oxide nanodevices affects their impedance properties compared to bulk systems [2]. In this work, we analyze a thin-film model system designed to study the interfaces between representative electrode and electrolyte materials employed in protonic ceramic electrochemical cells for the reversible conversion of hydrogen o electricity. The investigated device features a 21-layer architecture that alternates between an electrode material PBSCF (PrBa 0.5 Sr 0.5 Co 1.5 Fe 0.5 O 5+ϵ ) and a proton-conducting electrolyte BZY (BaZr 0.8 Y 0.2 O 3-δ ), with uniform 20 nm thickness for each layer. Here, the device was fabricated using Pulsed Laser Deposition (PLD) and supported on a conductive Nb-doped STO (Nb-SrTiO 3 ) substrate.

dos Santos, Gabriel T. [Northwestern University, E↗

Electronic reconstruction in confined SrRuO 3 monolayers

Here, we report the observation of an electronic reconstruction in dimensionally controlled ruthenate heterostructures synthesized by pulsed laser deposition. High structural and electronic quality of superlattices comprised of a single SrRuO 3 layer inter-spaced with varying thicknesses of insulating SrTiO 3 layers was verified by reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, reciprocal space mapping, and x-ray absorption spectroscopy. X-ray absorption spectroscopy evidences a confinement-driven evolution of the Ru electronic configuration from the 𝑑 5 $\underline{L}$ to the 𝑑 4 state. Significant increases of the spin-orbit coupling are observed in connection with the configuration changes supporting recent works identifying large enhancement of the magnetic anisotropy. The growth of high quality two-dimensional confined ruthenate layers under precisely controlled environments highlights the potential to directly manipulate interlayer coupling and selectively perturb the electronic state in ruthenates in analogy to superconducting Sr 2 ⁢RuO 4 .

36 MATERIALS SCIENCE↗

Structure-property relationships and mobility optimization in sputtered La-doped BaSn O 3 films: Toward 100cm 2 V -1 s -1

he wide band gap semiconducting perovskite BaSnO 3 is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO 3 thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO 3 thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba 0.98 La 0.02 SnO 3 films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm 2 V –1 s –1 is achieved in vacuum-annealed GdScO 3 (110)/BaSnO 3 (120 nm)/Ba 0.98 La 0.02 SnO 3 (200 nm) heterostructures, as well as 92 cm 2 V –1 s –1 on unbuffered substrates and 87 2 V –1 s –1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped BaSnO 3 films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.

36 MATERIALS SCIENCE↗

First- and second-order magnetic anisotropy and damping of europium iron garnet under high strain

Understanding and tailoring static and dynamic properties of magnetic insulator thin films is important for spintronic device applications. Here, we grow atomically flat epitaxial europium iron garnet (EuIG) thin films by pulsed laser deposition on (111)-oriented garnet substrates with a range of lattice parameters. By controlling the lattice mismatch between EuIG and the substrates, we tune the strain in EuIG films from the compressive to the tensile regime, which is characterized by x-ray diffraction. Using ferromagnetic resonance (FMR), we find that, in addition to the first-order perpendicular magnetic anisotropy which depends linearly on the strain, there is a significant second-order one that has a quadratic strain dependence. Inhomogeneous linewidth of the FMR increases notably with increasing strain, while the Gilbert damping parameter remains nearly constant (≈ 2 × 10 –2 ). Finally, these results provide valuable insight into the spin dynamics in ferrimagnetic insulators and useful guidance for material synthesis and engineering of next-generation spintronics applications.

36 MATERIALS SCIENCE↗

Mid-Infrared Nonlinear Frequency Conversion Using Monolithic Barium Titanate on Silicon-on-Insulator

In this work, efficient nonlinear frequency conversion in the mid-infrared (mid-IR) region was demonstrated by a barium titanate (BTO) on a silicon-on-insulator (SOI) substrate. The BTO thin film was epitaxially grown by pulsed-laser deposition (PLD). The tensorial second order optical nonlinearity and the ferroelectric domain property of the BTO were characterized by the polarimetric mid-IR second harmonic generation (SHG) measurements. Azimuthal-dependent polarized SHG was modeled at different combinations of the nonlinear coefficient $d_{ij}$ and the domain fraction factor $ΔD^Y/ΔD^X$. Strong SHG intensity was experimentally observed over a broad spectrum at λ = 3.1 μm - 3.7 μm. A characteristic linear dependence between the SHG signal and the square of the pumping laser intensity was observed. The monolithic integration between the epitaxial BTO and the Si provides a compact platform for efficient on-chip light generation and quantum photonic technologies.

25 ENERGY STORAGE↗

Utilizing TiO 2 amorphous precursors for polymorph selection: An in situ TEM study of phase formation and kinetics

Selective synthesis of metastable polymorphs requires a fundamental understanding of the complex energy landscapes in which these phases form. Recently, the development of in situ high temperature and controlled atmosphere transmission electron microscopy has enabled the direct observation of nucleation, growth, and phase transformations with near atomic resolution. In this work, we directly observe the crystallization behavior of amorphous TiO 2 thin films grown under different pulsed laser deposition conditions and quantify the mechanisms behind metastable crystalline polymorph stabilization. Films deposited at 10 mTorr chamber oxygen pressure crystallize into nanocrystalline Anatase at 325 degrees C, whereas films deposited at 2 mTorr crystallize into significantly larger needle-like grains of Brookite and Anatase at 270 degrees C. Increasing film deposition rate by a factor of 4 results in a 10x increase in the crystalline growth front velocity as well as a decrease in crystallization temperature from 270 degrees C to 225 degrees C. Engineering the amorphous precursor state through deposition conditions therefore provides routes to microstructure control and the accessibility of higher energy metastable phases.

36 MATERIALS SCIENCE↗

Orientation microscopy–assisted grain boundary analysis for protonic ceramic cell electrolytes

Abstract Grain boundaries in protonic ceramic cell (PCC) electrolytes hinder proton transport, reducing interfacial conductivity. In multicomponent PCC electrolytes, the inclusion of sintering aids further accentuates the complexity of grain boundaries. In this study, we synthesize nanocrystalline BaCe 0.4 Zr 0.4 Y 0.1 Yb 0.1 O 3− δ thin films via pulsed laser deposition and analyze their grain boundary character distributions using orientation data collected by precession electron diffraction technique. The results reveal an anisotropic distribution of grain boundary characters, with notably high populations of 180°‐tilt and twist grain boundaries. These findings provide critical insights into identifying the predominant grain boundaries in this PCC electrolyte material, assessing the vast five‐dimensional grain boundary space.

Patel, Sooraj [School of Aerospace and Mechanical ↗

Harnessing Chemical Short‐Range Disorder to Improve Lithium Retention in Epitaxial LLTO Solid‐Electrolyte Thin Films

Lithium lanthanum titanate Li 3x La 2/3-x TiO 3 (LLTO) is a promising perovskite-based solid-state electrolyte for next-generation lithium-ion batteries, but controlling crystallinity and Li stoichiometry in thin-film form is challenging because high growth temperatures are required to achieve good crystallinity while Li remains strongly volatile. Here, we systematically investigate the effect of substrate temperature on epitaxial LLTO thin films grown by pulsed laser deposition. We identify a narrow growth window (750–800°C) in which LLTO films grow as c-axis oriented with atomically flat surfaces. Lower growth temperatures (<750°C) stabilize laterally extended, chemically disordered stripe domains that coexist with ordered LLTO regions, whereas higher temperatures (≥825°C) suppress these defects but promote island morphologies and Al/Ti interdiffusion. While spectroscopy measurements show that Ti remains in the 4+ oxidation state and Li is globally deficient for all films, our depth-resolved time-of-flight secondary ion mass spectrometry studies reveal that the 700°C film retains the highest Li content across its thickness. These results clarify how growth temperature controls crystallinity, chemical short-range disorder, and Li retention, and highlight moderate growth temperatures (∼700°C) as a route to mitigate Li loss in epitaxial solid-electrolyte films.

chemical short-range disorder↗

Boron carbide films with reduced nodular defect density deposited by full-face erosion radio-frequency magnetron sputtering

Boron carbide coatings deposited by sputtering with conventional planar magnetrons exhibit nodular growth defects. Here, we demonstrate that the density of nodular defects in B 4 C films can be greatly reduced by using a full-face-erosion magnetron source that achieves a more uniform target erosion by sweeping the confining magnetic field over the target surface. Here, we systematically study properties of B 4 C films deposited on substrates with different tilt angles and demonstrate deposition of ultrathick films with compressive residual stress below 200MPa.

36 MATERIALS SCIENCE↗

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ~20-nm-thin films consisting of an amorphous HfO x host matrix interspersed with ~2-nm-wide, ~5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥10 4 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing–dependent plasticity. The presented concept unlocks additional design variables for RS devices.

36 MATERIALS SCIENCE↗

Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation

Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning of those properties has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due to the difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO3 thin films have been synthesized by reactive pulsed-laser deposition in a nitrogen growth atmosphere. The enhanced hybridization between titanium and nitrogen induces a large ferroelectric polarization of 70 μC/cm2 and high Curie temperature of ~1213 K, which are ~2.8 times larger and ~810 K higher than in bulk BaTiO3, respectively. These results suggest great potential for anion-substituted perovskite oxides in producing emergent functionalities and device applications.

Wang, Tao↗

Room-temperature high-purity single-photon emission from carbon-doped boron nitride thin films

Hexagonal boron nitride (h-BN) has emerged as a promising platform for generating room temperature single photons exhibiting high brightness and spin-photon entanglement. However, improving emitter purity, stability, and scalability remains a challenge for quantum technologies. Here, we demonstrate highly pure and stable single-photon emitters (SPEs) in h-BN by directly growing carbon-doped, centimeter-scale h-BN thin films using the pulsed laser deposition (PLD) method. These SPEs exhibit room temperature operation with polarized emission, achieving a g (2) (0) value of 0.015, which is among the lowest reported for room temperature SPEs and the lowest achieved for h-BN SPEs. It also exhibits high brightness (~0.5 million counts per second), remarkable stability during continuous operation (>15 min), and a Debye-Waller factor of 45%. First-principles calculations reveal unique carbon defects responsible for these properties, enabled by PLD’s low-temperature synthesis and in situ doping. Our results demonstrate an effective method for large-scale production of high-purity, stable SPEs in h-BN, enabling robust quantum optical sources for various quantum applications.

36 MATERIALS SCIENCE↗