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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

High work function MoO2 back contacts for improved solar cell performance

Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.

Antunez, Priscilla D.↗
DOE OSTI2024

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Cadmium telluride (CdTe) solar cells represent a commercially successful photovoltaic technology, with an annual production capacity approaching 20 GW. However, improving the open-circuit voltage (V OC ) remains challenging. This study aims to deepen the understanding of charge carrier recombination in CdTe solar cells and to explore alternative dynamical characterization methods that address the limitations found in conventionally used time-resolved photoluminescence for CdTe solar cells. Transient photovoltage and transient photocurrent techniques are utilized to investigate charge carrier dynamics under conditions resembling real-world solar cell operation. The results reveal that an effective nonradiative recombination lifetime of 580 ns dominates the charge dynamics at VOC values below 850 mV. Above this threshold, radiative recombination becomes significant, with a radiative recombination coefficient of 1.1 × 10 −9 cm 3 s −1 . Additionally, the stationary charge carrier density at 1 sun is determined to be around 1 × 10 14 cm −3 . By accurately determining both radiative and nonradiative recombination, this work provides a comprehensive understanding of carrier dynamics in high-performing CdTe devices and paves the way for improving the V OC and performance of CdTe solar cells.

CdTe solar cells↗
DOE OSTI2025

Laser Ablation for Low-Cost Multijunction III-V Solar Cell Mesa Isolations

Eliminating photolithography from solar cell processing is a significant opportunity for cost reduction for III-V solar cells. In this work, we test femtosecond laser ablation and scribing as an alternative to contact photolithography and wet chemical etching for mesa isolation, when processing multijunction cells. We demonstrate that upright multijunction solar cells isolated by using the laser as a scribe to cleave through the substrate had virtually no performance loss when compared to a baseline cell processed with photolithography. By contrast, cells isolated by laser ablating through the active layers have performance losses that cannot be fully eliminated with post-processing etches. This demonstration of photolithography-free mesa isolation with no performance losses is promising for less expensive III-V manufacturing.

14 SOLAR ENERGY↗
DOE OSTI2021

Compensated Contacts for Three-Terminal Transistor Solar Cells

The heterojunction bipolar transistor solar cell (HBTSC) is an alternative to conventional double-junction solar cells that combines the advantages of three-terminal architectures with a compact design. A critical part of the HBTSC fabrication is the implementation of the middle contact, the one associated to the base layer in the transistor structure, because this layer can be damaged by the diffusion of metallic species during contact annealing. As a solution we propose to implement a "compensated contact", that is, to leave a thin (< 200 nm) portion of emitter or collector between the base layer and the contact metals and compensate its doping during contact annealing. Using an Au/Zn/Au metal structure to compensate a 150 nm thick portion of the collector, we obtain a specific contact resistance ~8 10-4 ..omega.. cm2. This value is fairly invariant for annealing temperatures between 400 and 460 degrees C and annealing times between 2 and 5 minutes, and it does not improve by adding Pd to the metallic stack. Optimizing the compensated contact technology opens the path to the realization of III-V-material-based HBTSCs with open-circuit voltages and fill factors comparable to those of conventional multijunction architectures.

contact resistance↗
DOE OSTI2024

Wire-based metallization for solar cells

Approaches for fabricating wire-based metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal wires. Each metal wire of the plurality of metal wires is parallel along a first direction to form a one-dimensional layout of a metallization layer for the solar cell.

Sewell, Richard Hamilton↗
DOE OSTI2024

Lithography-Free Mesa Isolation of III–V Solar Cells Through Laser Ablation

Eliminating photolithography from solar cell processing is a significant opportunity for cost reduction for III-V solar cells. Here, in this work, we explore femtosecond laser ablation as an alternative to contact photolithography and wet chemical etching for mesa isolation. We demonstrate both GaAs and GaInP solar cells mesa-isolated by femtosecond laser ablation with minimal to no loss in solar cell performance. We show the best results with a 400 fs UV pulsed laser and a short clean-up etch that also serves as a contact layer removal etch.

14 SOLAR ENERGY↗
DOE OSTI2022

Techno-economic analysis of the use of atomic layer deposited transition metal oxides in silicon heterojunction solar cells

The industry for producing silicon solar cells and modules has grown remarkably over the past decades, with more than a 100-fold reduction in price over the past 45?years. The main solar cell fabrication technology has shifted over that time and is currently dominated by the passivated emitter and rear cell (PERC). Other technologies are expected to increase in market share, including tunnel-oxide passivated contact (TOPCon) and heterojunction technology (HJT). In this paper, we examine the cost potential for using atomic layer deposition (ALD) to form transition metal oxide (TMO) layers (MoO x , TiO x and aluminium-doped zinc oxide [AZO]) to use as lower cost alternatives of the p-doped, n-doped and indium tin oxide (ITO) layers, respectively, the layers normally used in HJT solar cells. Using a bottom-up cost and uncertainty model with equipment cost data and process experience in the lab, we find that the production cost of these variations will likely be lower per wafer than standard HJT, with the main cost drivers being the cost of the ALD precursors at high-volume production. We then considered what efficiency is required for these sequences to be cost effective in $/W and discuss whether these targets are technically feasible. This work motivates further work in developing these ALD TMO processes to increase their efficiency towards their theoretical limits to take advantage of the processing cost advantage.

14 SOLAR ENERGY↗
DOE OSTI2021

Perovskite Solar Cells Go Bifacial—Mutual Benefits for Efficiency and Durability

Bifacial solar cells hold the potential to achieve a higher power output per unit area than conventional monofacial devices without significantly increasing manufacturing costs. However, efficient bifacial designs are challenging to implement in inorganic thin-film solar cells because of their short carrier lifetimes and high rear surface recombination. The emergence of perovskite photovoltaic (PV) technology creates a golden opportunity to realize efficient bifacial thin-film solar cells, owing to their outstanding optoelectronic properties and unique features of device physics. More importantly, transparent conducting oxide electrodes can prevent electrode corrosion by halide ions, mitigating one major instability issue of the perovskite devices. Here, the theory of bifacial PV devices is summarized and the advantages of bifacial perovskite solar cells, such as high power output, enhanced device durability, and low economic and environmental costs, are reviewed. The limitations and challenges for bifacial perovskite solar cells are also discussed. Lastly, the awareness of bifacial solar cells as a feasible commercialization pathway of perovskite PV for mainstream solar power generation and building-integrated PV is advocated and future research directions are suggested.

14 SOLAR ENERGY↗
DOE OSTI2024

Contactless Production Testing of Silicon Solar Cells

Critical cost reductions in silicon solar cells are made by minimizing silver usage in their metal contacts. The reason why is both clear and unavoidable—silver is not only expensive, but also a potential limiting resource for scale-up (the PV industry alone used 10.3 % of the global silver supply in 2020 [1]). The result is solar cells with vanishing electrical contact area that are extremely difficult to test prior to module manufacture, when they must be sorted for quality to maximize power output and reliability of the subsequent modules. This project developed a new measurement instrument that enables the transition to solar cells with very low silver content, including cell designs with both minimal busbars and no busbars at all to electrically contact. The resulting instrument at project completion demonstrated the ability to sort cells with comparable—or better—results than existing technology. Compared to existing cell-test instruments, the new tool has minimal contacting requirements, which lowers the maintenance costs and use of consumable parts. We demonstrated innovative, yet pragmatic, solutions for reporting a comprehensive set of measurement results useful for both cell sorting (going forward in the line for module manufacture) and process control (looking backward in the line to identify cell manufacturing issues from wafer to cell-test). In addition to the traditional current-voltage characterization at cell test—short circuit current, open-circuit voltage, power, efficiency and fill factor—the new tool maintains all the advanced parameter characterization of our existing product line such as a substrate doping measurement, carrier recombination (lifetime) analysis, and surface recombination analysis.

14 SOLAR ENERGY↗
DOE OSTI2024

A Comparison of CdS and Zn(O,S) Buffer Layers in (Ag,Cu)(In,Ga)Se2 Solar Cells

Cu(In,Ga)Se 2 -based solar cells typically use a C dS buffer layer, even though its relatively low bandgap causes parasitic absorption. While alternatives to CdS have been explored in other studies, limited results have been shown for Ag-alloyed CIGS (ACIGS). In this study, ACIGS solar cells with both CdS and Zn(O,S) buffer layers were fabricated and compared for solar cell performance. The Zn(O,S) buffer slightly improved J sc through reduced absorption, although surface optimization is necessary. The Zn(O,S) ACIGS also had improved FF through reduced series resistance and ideality factor, which could be improved further through optimization. However, the Voc in the Zn(O,S) samples was reduced, likely due to increased bulk and front interface recombination. This study shows the promise of Zn(O,S) as a buffer layer in ACIGS solar cells and suggests pathways for further improvement.

absorption↗
DOE OSTI2021

Effect of Dopant Compensation on the Conductivity of the Intrinsic poly-Si Isolation Region in Passivated IBC Silicon Solar Cells

The performance of IBC solar cells depends on the ability of this region to electrically isolate the doped fingers so that shunting does not occur and reduce the cell fill factor. We report on simulations which model the region between the p- and n-type poly-Si fingers of interdigitated back contact (IBC) solar cells as a series of resistors extending from one doped finger to the other. We demonstrate that the existence of a well compensated region between the doped fingers is enough to prevent shunting and loss of cell performance, despite contamination of dopants from the opposing dopant fingers. We show through these simulations that a net doping concentration below ~1018 cm-3 will enable a high resistivity and identify the conditions under which this highly resistive region forms despite imperfect finger edges. Additionally, we apply this analysis to tails measured by time-of-flight secondary ion mass spectrometry and confirm this hypothesis for our experimentally measured tails.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2025

Deuterium-substituted cations enhance perovskite solar cell efficiency and stability

Halide perovskite solar cells with mixed-cation compositions often face instabilities under continuous illumination due to the deprotonation of methylammonium (CH 3 NH 3 + , MA + ) cations. Here, to address this, we systematically evaluate the partial and complete deuteration of MA + cations. This approach inhibits deprotonation and degradation, reduces the formation energy of the perovskite phase, improves grain growth, passivates defects, and restrains ion migration. As a result, perovskite solar cells incorporating this deuteration strategy achieve exceptional performance, including a high fill factor (FF) of 82.6% and a power conversion efficiency (PCE) of 25.6%. Their modules with a device area of 56 cm 2 demonstrate remarkable stability, maintaining over 93.7% of their initial PCE after 1,000 h at the maximum power point under continuous illumination at 40°C. This novel deuteration strategy presents a promising approach to enhance both the efficiency and stability of perovskite solar cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Unraveling the Photovoltaic, Mechanical, and Microstructural Properties and Their Correlations in Simple Poly(3‐pentylthiophene) Solar Cells

Abstract The power conversion efficiency of polythiophene organic solar cells is constantly refreshed. Despite the renewed device efficiency, very few efforts have been devoted to understanding how the type of electron acceptor alters the photovoltaic and mechanical properties of these low‐cost solar cells. Herein, the authors conduct a thorough investigation of photovoltaic and mechanical characteristics of a simple yet less‐explored polythiophene, namely poly(3‐pentylthiophene) (P3PT), in three different types of organic solar cells, where ZY‐4Cl, PC 71 BM, and N2200 are employed as three representative acceptors, respectively. Compared with the reference poly(3‐hexylthiophene) (P3HT)‐based solar cells, P3PT‐based devices, all perform more efficiently. Particularly, the P3PT:ZY‐4Cl blend exhibits the highest efficiency (ca. 10%) among the six combinations and outperforms the prior top‐performance system P3HT:ZY‐4Cl. Furthermore, the blend films based on N2200 exhibit a high crack‐onset strain of ∼38% on average, which is approximately 15‐ and 17‐times higher than those of ZY‐4Cl and PC 71 BM, respectively. The microstructural origins for the above difference are well elucidated by detailed grazing incidence X‐ray scattering and microscopy analysis. This work not only underlines the potential of P3PT in prolific solar cell research but also demonstrates the superior tensile properties of polythiophene‐based all‐polymer blends for the preparation of stretchable solar cells.

Polymer Science↗
DOE OSTI2024

Evaluating the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

A bifacial silicon heterojunction solar cell demands approximately 210 mg usage of silver paste (9 busbars, 24.5%, bifacial, M6 size wafer). Copper is an excellent alternative to silver: 100x cheaper, similar elecvtrical resistivities, and 1000x more abundant. Successful demonstration of large area selective emitter PERC solar cells using Cu fire-through paste with FF approximately 75% and approximately 19%. Paste chemistry results in oxide-based Cu diffusion barrier, leading to good reliability of the devices: 1000h DHT giving a 3.5% efficiency drop. The additional series resistance still needs to be lowered. Printed and fired cell performance is governed mostly by pFF, especially J02 ; same for DHT degradation. Further improvement in printing and firing optimization for lower series resistance and higher FF.

Ag↗
DOE OSTI2020

Sputtered p-Type Cu x Zn 1– x S Back Contact to CdTe Solar Cells

As thin-film cadmium telluride (CdTe) solar cells gain prominence, one particular challenge is optimizing contacts and their interfaces to transfer charge without losses in efficiency. Back contact recombination is still significant and will prevent CdTe solar technology from reaching its full potential in device efficiency, and transparent back contacts have not been developed for bifacial solar technology or multijunction solar cells. To address these challenges, here we investigate sputtered Cu x Zn 1– x S as a p-type semi-transparent back contact material to thin-film polycrystalline CdTe solar cells at Cu concentrations x = 0.30, 0.45, and 0.60. This material is selected for its high hole conductivity (160–2120 S cm –1 ), wide optical band gap (2.25–2.75 eV), and variable ionization potential (approximately 6–7 eV) that can be aligned to that of CdTe. We report that without device optimization, CdTe solar cells with these Cu x Zn 1– x S back contacts perform as well as control cells with standard ZnTe:Cu back contacts. We observe no reduction in external quantum efficiency, low contact barrier heights of approximately 0.3 eV, and carrier lifetimes on par with those of baseline CdTe. These cells are relatively stable over one year in air, with V OC and efficiency of the x = 0.30 cell decreasing by only 1 and 3%, respectively. Using scanning electron microscopy and scanning transmission electron microscopy to investigate the Cu x Zn 1– x S/CdTe interface, we demonstrate that the Cu x Zn 1– x S layer segregates into a bilayer of Cu-Te-S and Zn-Cd-S, and thermodynamic reaction calculations support these findings. Despite its bilayer formation, the back contact still functions well. This investigation explains some of the physical mechanisms governing the device stack, inspires future work to understand interfacial chemistry and charge transfer, and elicits optimization to achieve higher-efficiency CdTe cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Effect of Surface Texture on Pinhole Formation in SiO x -Based Passivated Contacts for High-Performance Silicon Solar Cells

High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiO x layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiO x layer, the charge carriers can cross this layer by tunneling (<2 nm SiO x thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiO x layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiO x contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiO x layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiO x layer. Our results show that the pinholes in the SiO x layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

14 SOLAR ENERGY↗