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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2014

Investigation of HZETRN 2010 as a Tool for Single Event Effect Qualification of Avionics Systems

NASA's future missions are focused on deep space for human exploration that do not provide a simple emergency return to Earth. In addition, the deep space environment contains a constant background Galactic Cosmic Ray (GCR) radiation exposure, as well as periodic Solar Particle Events (SPEs) that can produce intense amounts of radiation in a short amount of time. Given these conditions, it is important that the avionics systems for deep space human missions are not susceptible to Single Event Effects (SEE) that can occur from radiation interactions with electronic components. The typical process to minimizing SEE effects is through using heritage hardware and extensive testing programs that are very costly. Previous work by Koontz, et al. [1] utilized an analysis-based method for investigating electronic component susceptibility. In their paper, FLUKA, a Monte Carlo transport code, was used to calculate SEE and single event upset (SEU) rates. This code was then validated against in-flight data. In addition, CREME-96, a deterministic code, was also compared with FLUKA and in-flight data. However, FLUKA has a long run-time (on the order of days), and CREME-96 has not been updated in several years. This paper will investigate the use of HZETRN 2010, a deterministic transport code developed at NASA Langley Research Center, as another tool that can be used to analyze SEE and SEU rates. The benefits to using HZETRN over FLUKA and CREME-96 are that it has a very fast run time (on the order of minutes) and has been shown to be of similar accuracy as other deterministic and Monte Carlo codes when considering dose [2, 3, 4]. The 2010 version of HZETRN has updated its treatment of secondary neutrons and thus has improved its accuracy over previous versions. In this paper, the Linear Energy Transfer (LET) spectra are of interest rather than the total ionizing dose. Therefore, the LET spectra output from HZETRN 2010 will be compared with the FLUKA and in-flight data to validate HZETRN 2010 as a computational tool for SEE qualification by analysis. Furthermore, extrapolation of these data to interplanetary environments at 1 AU will be investigated to determine whether HZETRN 2010 can be used successfully and confidently for deep space mission analyses.

Rojdev, Kristina↗
NASA NTRS2012

Non Volatile Flash Memory Radiation Tests

Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

single event upset results↗
NASA NTRS2016

Goal Structuring Notation in a Radiation Hardening Assurance Case for COTS-Based Spacecraft

A systematic approach is presented to constructing a radiation assurance case using Goal Structuring Notation (GSN) for spacecraft containing COTS parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat in January 2017. A custom software language for development of a GSN assurance case is under development at Vanderbilt. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed.

Radiation Effects Modeling (REM)↗
NASA NTRS2016

Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk BiCMOS/DMOS technology. Since we do not know the number of overlayers used in the fabrication processes, linear energy transfer calculations are determined based on the top-surface incident ion species and kinetic energy.

Power MOSFET↗
NASA NTRS2003

TID, SEE and radiation induced failures in advanced flash memories

We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.

Scheick, Leif Z.↗
NASA NTRS2003

Neutron Particle Effects on a Quad-Redundant Flight Control Computer

This paper describes a single-event upset experiment performed at the Los Alamos National Laboratory. A closed-loop control system consisting of a Quad-Redundant Flight Control Computer (FCC) and a B737 simulator was operated while the FCC was exposed to a neutron beam. The purpose of this test was to analyze the effects of neutron bombardment on avionics control systems operating at altitudes where neutron strikes are probable. The neutron energy spectrum produced at the Los Alamos National Laboratory is similar in shape to the spectrum of atmospheric neutrons but much more intense. The higher intensity results in accelerated life tests that are representative of the actual neutron radiation that a FCC may receive over a period of years.

Eure, Kenneth↗
NASA NTRS1989

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

Buehler, M. G.↗
NASA NTRS1983

Modeling of single-event upset in bipolar integrated circuits

The results of work done on the quantitative characterization of single-event upset (SEU) in bipolar random-access memories (RAMs) have been obtained through computer simulation of SEU in RAM cells that contain circuit models for bipolar transistors. The models include current generators that emulate the charge collected from ion tracks. The computer simulation results are compared with test data obtained from a RAM in a bipolar microprocessor chip. This methodology is applicable to other bipolar integrated circuit constructions in addition to RAM cells.

Zoutendyk, J. A.↗
NASA NTRS1982

Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings

The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.

Long, D. M.↗
NASA NTRS2005

Virtex-II Pro PowerPC SEE Characterization Test Methods and Results

The Xilinx Vix-11 Pro is a platform FPGA that embeds multiple microprocessors within the fabric of an SRAM-based reprogrammable FPGA. The variety and quantity of resources provided by this family of devices make them very attractive for spaceflight applications. However,these devices will be susceptible to single event effects (SEE), which must be mitigated. Observations from prior testing of the Xilinx Virtex-II Pro suggest that the PowerPC core has significant vulnerability to SEES. However, these initial tests were not designed to exclusively target the functionality of the PowerPC, therefore making it difficult to distinguish processor upsets from fabric upsets. The main focus of this paper involves detailed SEE testing of the embedded PowerPC core. Due to the complexity of the PowerPC, various custom test applications, both static and dynamic, will be designed to isolate each Unit of the processor. Collective analysis of the test results will provide insight into the exact upset mechanism of the PowerPC. With this information, mitigations schemes can be developed and tested that address the specific susceptibilities of these devices. The test bed will be the Xilinx SEE Consortium Virtex-II Pro test board, which allows for configuration scrubbing, design triplication, and ease of data collection. Testing will be performed at the Indiana University Cyclotron Facility using protons of varying energy levels and fluencies. This paper will present the detailed test approach along with the results.

Petrick, David↗
NASA NTRS2008

Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM s state is shown to be based upon the resistive path from the p+-sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are then predicted and compared to recent SRAM test data.

Black, J. D.↗
NASA NTRS2002

REE radiation fault model: a tool for organizing and communication radiation test data and construction COTS based spacebourne computing systems

The growth in data rates of instruments on future NASA spacecraft continues to outstrip the improvement in communications bandwidth and processing capabilities of radiation-hardened computers. Sophisticated autonomous operations strategies will further increase the processing workload. Given the reductions in spacecraft size and available power, standard radiation hardened computing systems alone will not be able to address the requirements of future missions. The REE project was intended to overcome this obstacle by developing a COTS- based supercomputer suitable for use as a science and autonomy data processor in most space environments. This development required a detailed knowledge of system behavior in the presence of Single Event Effect (SEE) induced faults so that mitigation strategies could be designed to recover system level reliability while maintaining the COTS throughput advantage. The REE project has developed a suite of tools and a methodology for predicting SEU induced transient fault rates in a range of natural space environments from ground-based radiation testing of component parts. In this paper we provide an overview of this methodology and tool set with a concentration on the radiation fault model and its use in the REE system development methodology. Using test data reported elsewhere in this and other conferences, we predict upset rates for a particular COTS single board computer configuration in several space environments.

Radiation Effects Modeling COTS computers REE SEU ↗
NASA NTRS2024

EdgeCortix SAKURA-I Machine-Learning, PCIe Accelerator SEE Heavy Ion Test Report

To enable autonomy in space, machine-learning and computer vision applications become invaluable for sensor processing. However, these algorithms are computationally complex and unfeasible for many embedded central processing units (CPUs) and usually require external coprocessors, such as graphics processing units (GPUs) or accelerators specific to the application, including application specific integrated circuits (ASICs). In power-constrained systems, GPUs tend to consume more power than is acceptable (>40W), so lower-power accelerators have shown promise to provide the performance needed under spacecraft constraints. For radiation engineers, developing methodologies that can properly test CPUs, GPUs, and accelerators, and enable comparisons between them remains a necessary complication to solve as the devices become more complex. The methodology in this test aims to be a start in developing a baseline single-event effect (SEE) test for client-device machine learning accelerators. This category of devices do not host their own operating system. This testing campaign is a continuation of a previous 200 MeV proton test performed in January 2024. This report covers two heavy ion tests of the SAKURA-I card: one in April 2024, and one in June 2024. Additional data was needed after the April test due to ion-range issues experienced at higher linear-energy transfers (LETs). These range issues are described in more detail in Section 8. This experiment characterizes SEEs and data error susceptibility of the EdgeCortix SAKURA-I machine-learning accelerator under heavy ions. The device was monitored for single event upsets (SEUs) and single event functional interrupts (SEFIs) at the Lawrence Berkeley National Laboratory’s 88-inch cyclotron. The SAKURA-I board accelerates machine-learning inference applications on a host computer through a PCIex16 connection. For the purposes of devising an end to end automated analysis workflow for this experiment, the YOLO-V5 and SSD300 objection-detection models, and the ResNet-50, EfficientNet, and MobileNetV2 image classification models were used as a representative suite of analytical machine-learning models.

Seth S Roffe↗
NASA NTRS2005

Radiation Mitigation and Power Optimization Design Tools for Reconfigurable Hardware in Orbit

The Reconfigurable Hardware in Orbit (RHinO)project is focused on creating a set of design tools that facilitate and automate design techniques for reconfigurable computing in space, using SRAM-based field-programmable-gate-array (FPGA) technology. In the second year of the project, design tools that leverage an established FPGA design environment have been created to visualize and analyze an FPGA circuit for radiation weaknesses and power inefficiencies. For radiation, a single event Upset (SEU) emulator, persistence analysis tool, and a half-latch removal tool for Xilinx/Virtex-II devices have been created. Research is underway on a persistence mitigation tool and multiple bit upsets (MBU) studies. For power, synthesis level dynamic power visualization and analysis tools have been completed. Power optimization tools are under development and preliminary test results are positive.

French, Matthew↗
NASA NTRS2021

SEE Test Report for Texas Instruments TLV5618 2.7-V to 5.5-V Low-Power Dual 12-Bit Digital-to-Analog Converter with Power Down

The primary purpose of this testing was to characterize the Texas Instruments TLV5618 12-bit digital-to-analog converter (DAC) for single-event latchup (SEL) susceptibility. These data will be used to assess the SEL risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the DAC to single-event transients (SET), single-event upsets (SEU), and other nondestructive SEE.

Raymond Ladbury↗