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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Investigation of Fiber Waviness in a Thick Glass Composite Beam Using THz NDE

Fiber waviness in laminated composite material is introduced during manufacture because of uneven curing, resin shrinkage, or ply buckling caused by bending the composite lay-up into its final shape prior to curing. The resulting waviness has a detrimental effect on mechanical properties, therefore this condition is important to detect and characterize. Ultrasonic characterization methods are difficult to interpret because elastic wave propagation is highly dependent on ply orientation and material stresses. By comparison, the pulsed terahertz response of the composite is shown to provide clear indications of the fiber waviness. Pulsed Terahertz NDE is an electromagnetic inspection method that operates in the frequency range between 300 GHz and 3 THz. Its propagation is influenced by refractive index variations and interfaces. This work applies pulsed Terahertz NDE to the inspection of a thick composite beam with fiber waviness. The sample is a laminated glass composite material approximately 15mm thick with a 90-degree bend. Terahertz response from the planar section, away from the bend, is indicative of a homogeneous material with no major reflections from internal plies, while the multiple reflections at the bend area correspond to the fiber waviness. Results of these measurements are presented for the planar and bend areas.

Anastasi, Robert F.↗
NASA NTRS1998

Low-Loss NbTiN Films for THz SIS Mixer Tuning Circuits

Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride has long been considered a good candidate material, but typical NbN films suffer from high RF loss. To circumvent this problem we are currently investigating the RF loss in NbTiN films, a 15 K Tc compound superconductor, by incorporating them into quasi-optical slot antenna SIS devices.

Kooi, J. W.↗
NASA NTRS1992

All-solid-state radiometers for environmental studies to 700 GHz

We report results with an all-solid-state radiometer for measurements of the ClO molecule at 649 GHz. The project is part of a program to provide low-noise, low-weight, low-power radiometers for space operation, and special effort has been expended on the development of high-efficiency solid-state frequency multipliers and Schottky-barrier mixers with low local oscillator power requirements. The best measured system noise temperature was 1750 K with the mixer and preamplifier cooled to 77 K. The mixer diode was easily pumped into saturation, indicating that the design has excellent prospects of operating at higher frequencies - our present design goal being 1 THz. We comment on the principal design features of such systems and will report on stratospheric measurements performed with this system.

Zimmermann, Ralph↗
NASA NTRS1999

Low-Noise Submillimeter-Wave NbTiN Superconducting Tunnel Junction Mixers

We have developed a low-noise 850 GHz superconductor-insulator-superconductor (SIS) quasi-particle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of T(sub RX) = 260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2(delta)/h is approximately 1.2THz.

Kawamura, J.↗
NASA NTRS2007

Terahertz NDE Application for Corrosion Detection and Evaluation under Shuttle Tiles

Pulsed Terahertz NDE is being examined as a method to inspect for possible corrosion under Space Shuttle Tiles. Other methods such as ultrasonics, infrared, eddy current and microwave technologies have demonstrable shortcomings for tile NDE. This work applies Terahertz NDE, in the frequency range between 50 GHz and 1 THz, for the inspection of manufactured corrosion samples. The samples consist of induced corrosion spots that range in diameter (2.54 to 15.2 mm) and depth (0.036 to 0.787 mm) in an aluminum substrate material covered with tiles. Results of these measurements are presented for known corrosion flaws both covered and uncovered and for blind tests with unknown corrosion flaws covered with attached tiles. The Terahertz NDE system is shown to detect all artificially manufactured corrosion regions under a Shuttle tile with a depth greater than 0.13 mm.

Anastasi, Robert F.↗
NASA NTRS2006

Terahertz NDE for Metallic Surface Roughness Evaluation

Metallic surface roughness in a nominally smooth surface is a potential indication of material degradation or damage. When the surface is coated or covered with an opaque dielectric material, such as paint or insulation, then inspecting for surface changes becomes almost impossible. Terahertz NDE is a method capable of penetrating the coating and inspecting the metallic surface. The terahertz frequency regime is between 100 GHz and 10 THz and has a free space wavelength of 300 micrometers at 1 THz. Pulsed terahertz radiation, can be generated and detected using optical excitation of biased semiconductors with femtosecond laser pulses. The resulting time domain signal is 320 picoseconds in duration. In this application, samples are inspected with a commercial terahertz NDE system that scans the sample and generates a set of time-domain signals that are a function of the backscatter from the metallic surface. Post processing is then performed in the time and frequency domains to generate C-scan type images that show scattering effects due to surface non-uniformity.

Madaras, Eric I.↗
NASA NTRS1988

Frequency measurement of the J = 1-0 rotational transition of HD

The frequency of the astronomically important J = 1-0 rotational transition of HD at 2.7 THz (90/cm) has been measured with tunable FIR radiation with an accuracy of 150 kHz. This frequency is now known to sufficient accuracy for use in future astrophysical heterodyne observations of HD in planetary atmospheres (reported by Bezard et al., 1986) and in the interstellar medium (reported by Bussoletti et al., 1975).

Evenson, K. M.↗
NASA NTRS2001

Micromachined TWTs for THz Radiation Sources

The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.

Booske, John H.↗
NASA NTRS2017

Development of 3-5 THz Harmonic Mixer

There is a high need for 2 THz room temperaturedirect-detectorsharmonic-mixers to characterize THz opticalsources, phase lock THz-QCLs as LO sources for multi-pixelreceivers, and realize absolute frequency calibration sources forapplications in astrophysics, earth science, and remote sensing.Thus, we have developed a WM-52 (WR0.22) harmonic mixerfor the 3-5 THz operation. The design, fabrication and assemblyof the THz mixer are discussed.

Microwave Devices↗
NASA NTRS2001

Embedded Coplanar Strips Traveling-Wave Photomixers

The electric field distribution in photomixers with electrodes deposited on the surface has already been calculated. It was shown that the strength of the electric field diminishes rapidly with depth. It was argued that the resulting reduction of the effective interaction volume of the device lowers the optical-to-heterodyne conversion. In this paper, we will present the results of our investigation on the influence of the electrode placement on the performance of photomixers. We have fabricated and measured traveling-wave photomixer devices which have both embedded and surface electrodes - the nominal spacing between the electrodes was 2 micrometers. Devices were made using either low-temperature-grown (LTG)-GaAs or ErAs:GaAs as the photoconductive material. The dark current, photocurrent, and radio frequency (RF) emission were measured at nominally 1 THz. The experimental data show a surprising difference in the behavior of ErAs:GaAs devices when the electrodes are embedded. A factor of two increase in RF radiation is observed for electric fields < 20 kV/cm. No such improvement was observed for the LTG-GaAs devices. We argue that the distinctive behavior of the two photoconductive materials is due to differences in the crystal structure - LTG-GaAs is isotropic, while ErAs:GaAs is uniaxial. We find that the carrier mobility in-plane (parallel) to the ErAs layers in the ErAs:GaAs superlattice is larger than orthogonal to these layers. The data indicate that carrier velocity overshoot is responsible for the excess radiation produced for the embedded electrode ErAs:GaAs devices.

Wyss, R. A.↗
NASA NTRS2010

Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers

The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.

Lin, Robert H.↗
NASA NTRS2012

Multicolor Detectors for Ultrasensitive Long-Wave Imaging Cameras

A document describes a zeptobolometer for ultrasensitive, long-wavelength sensors. GSFC is developing pixels based on the zeptobolometer design that sense three THz wavelengths simultaneously. Two innovations are described in the document: (1) a quasiparticle (QO) filter arrangement that enables a compact multicolor spectrum at the focal plane, and (2) a THz antenna readout by up to three bolometers. The innovations enable high efficiency by greatly reducing high, frequency-dependent microstrip losses, and pixel compactness by eliminating the need for bulky filters in the focal plane. The zeptobolometer is a small TES bolometer, on the scale of a few microns, which can be readily coupled through an impedance-matching resistor to a metal or dielectric antenna. The bolometer is voltage-biased in its superconducting transition, allowing the use of superconducting RF multiplexers to read out large arrays. The antenna is geometrically tapped at three locations so as to efficiently couple radiation of three distinct wavelengths to the individual TESs. The transition edge hot electrons in metals offer a simple, compact arrangement for antenna readout, which can be crucial in the THz where line losses at high frequencies can be substantial. A metallic grill filter acts as a high-pass filter and directs the low-frequency components to a location where they will be absorbed. The absorption spectrum shows that three well-separated THz bands are feasible. The filters can be made from high-purity dielectrics such as float zone silicon or sapphire.

Brown, Ari↗
NASA NTRS2002

Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

Kolokolov, K.↗
NASA NTRS1989

30 Hz-linewidth, diode-laser-pumped, Nd:GGG nonplanar ring oscillators by active frequency stabilisation

A heterodyne linewidth of less than 30 Hz for the beatnote between the outputs of two 282 THz Nd:GGG nonplanar ring oscillators (NPROs) is reported. The lasers were independently locked to adjacent axial modes of a high-finesse interferometer. The remnant frequency noise appears to be dominated by free spectral range fluctuations in the reference interferometer rather than by residual laser noise.

Day, T.↗
NASA NTRS2022

A Sub-THz CMOS Molecular Clock with 20 ppt Stability at 10,000 s Based on A Dual-Loop Spectroscopic Detection and Digital Frequency Error Integration

This paper presents a dual-loop chip-scale molecular clock (CSMC), which enhances the Allan Deviation performance by combining high signal-to-noise ratio of using fundamental mode and long-term stability of using higher order modes in derivative molecular absorption spectroscopy. In addition, digital frequency-error integration is adopted in the frequency-locked loop to provide an infinite open-loop DC gain, which fully suppresses any frequency drift caused by the temperature-sensitive crystal oscillator. This new generation CSMC is implemented in 65-nm CMOS, and achieves 20 ppt (part-per-trillion) Allan Deviation at 10,000 s averaging time with 71-mW power consumption.

Han, Ruonan↗
NASA NTRS1988

Study of optical output couplers for submillimeter wavelength backward-wave oscillators (BWO's)

The machining of slow wave structures for high frequency backward-wave oscillators (BWO) is extremely difficult beyond 1 THz. Recently a microfabrication technique using photolithography and ion-beam assisted etching has been used to construct a prototype BWO operating at 200 to 265 GHz. The output coupler for such tubes remains a problem. Waveguides do not exist or are very lossy at the frequencies of interest (300 to 2000 GHz). This paper discusses several scaled experiments of optical output couplers for submillimeter BWOs. Various designs of planar antennas (Vivaldi horns) and lens-feed systems (Hyperhemispherical lens) were constructed and tested between 20 and 100 GHz using a spectrum analyzer. The lens system was also tested at 337 GHz using a CO2 pumped FIR laser.

Cook, Jerry D.↗
NASA NTRS2004

THz semiconductor-based front-end receiver technology for space applications

Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

Schottky diode multipliers↗
NASA NTRS2013

A 294 GHz 0.47m W Caterpillar amplifier based transmitter in 65 nm CMOS for THz data-links

A fully integrated CMOS THz transmitter for short range data-links is presented which provides 0.47 mW of output power to 294 GHz. The output frequency is derived from a 147 GHz on-chip LO and fully differential caterpillar power amplifier combined with a transformer coupled frequency doubler. The transmitter is integrated with an on-chip dipole antenna for use in THz communication systems and consumes a total of 258 mW.

Chang, Mau-Chung Frank↗