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Single Event Upset Response of 12L FinFET Digital Circuits.
Abstract not provided.
Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits.
Abstract not provided.
Influence of Silicon Thinning on Upset Response of 28-nm SRAMs
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Scaling Factors for Single Event Upsets with High Error Counts
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Proton upsets in LSI memories in space
Two types of large scale integrated dynamic random access memory devices were tested and found to be subject to soft errors when exposed to protons incident at energies between 18 and 130 MeV. These errors are shown to differ significantly from those induced in the same devices by alphas from an Am-241 source. There is considerable variation among devices in their sensitivity to proton-induced soft errors, even among devices of the same type. For protons incident at 130 MeV, the soft error cross sections measured in these experiments varied from 10 to the -8th to 10 to the -6th sq cm/proton. For individual devices, however, the soft error cross section consistently increased with beam energy from 18-130 MeV. Analysis indicates that the soft errors induced by energetic protons result from spallation interactions between the incident protons and the nuclei of the atoms comprising the device. Because energetic protons are the most numerous of both the galactic and solar cosmic rays and form the inner radiation belt, proton-induced soft errors have potentially serious implications for many electronic systems flown in space.
Transient upsets in microprocessor controllers
The modeling and analysis of transient faults in microprocessor based controllers are discussed. Such controllers typically consist of a microprocessor, read only memory storing and application program, random access memory for data storage, and input/output devices for external communications. The effects of transient faults on the performance of the controller are reviewed. An instruction level perspective of performance is taken which is the basis of a useful high level program state description of the microprocessor controller. A transition matrix is defined which determines the controller's response to transient fault arrivals.
Upset susceptibility study employing circuit analysis and digital simulation
This paper describes an approach to predicting the susceptibility of digital systems to signal disturbances. Electrical disturbances on a digital system's input and output lines can be induced by activities and conditions including static electricity, lightning discharge, Electromagnetic Interference (EMI) and Electromagnetic Pulsation (EMP). The electrical signal disturbances employed for the susceptibility study were limited to nondestructive levels, i.e., the system does not sustain partial or total physical damage and reset and/or reload will bring the system to an operational status. The front-end transition from the electrical disturbances to the equivalent digital signals was accomplished by computer-aided circuit analysis. The Super-Sceptre (system for circuit evaluation of transient radiation effects) Program was used. Gate models were developed according to manufacturers' performance specifications and parameters resulting from construction processes characteristic of the technology. Digital simulation at the gate and functional level was employed to determine the impact of the abnormal signals on system performance and to study the propagation characteristics of these signals through the system architecture. Example results are included for an Intel 8080 processor configuration.
Analysis of the nature and cause of turbulence upset using airline flight records
The development and application of methods for determining aircraft motions and related winds, using data normally recorded during airline flight operations, are described. The methods are being developed, in cooperation with the National Transportation Safety Board, to aid in the analysis and understanding of circumstances associated with aircraft accidents or incidents. Data from a recent DC-10 encounter with severe, high-altitude turbulence are used to illustrate the methods. The analysis of this encounter shows the turbulence to be a series of equally spaced horizontal swirls known as 'cat's eyes' vortices. The use of flight-data analysis methods to identify this type of turbulence phenomenon is presented for the first time.
Upset susceptibility study employing circuit analysis and digital simulation
An approach to predict the susceptibility of digital systems to signal disturbances is described. Electrical disturbances on a digital system's input and output lines can be induced by activities and conditions including static electricity, lightning discharge, electromagnetic interference (EMI), and electromagnetic pulsation (EMP). The electrical signal disturbances employed for the susceptibility study were limited to nondestructive levels, i.e., the system does not sustain partial or total physical damage and reset and/or reload brings the system to an operational status. The front-end transition from the electrical disturbances to the equivalent digital signals was accomplished by computer-aided circuit analysis. The super-sceptre (system for circuit evaluation of transient radiation effects) programs was used. Gate models were developed according to manufacturers' performance specifications and parameters resulting from construction processes characteristic of the technology. Digital simulation at the gate and functional level was employed to determine the impact of the abnormal signals on system performance and to study the propagation characteristics of these signals through the system architecture. Example results are included for an Intel 8080 processor configuration.
The solar flare heavy ion environment for single-event upsets - A summary of observations over the last solar cycle, 1973-1983
A summary of observations of the flux of 25 to 400 MeV/nucleon heavy ions from solar flares is presented covering the period from late 1973 to early 1984. Distributions of flare occurrence frequency versus fluence, energy spectra, and composition are presented for the 30 events observed during this period, to quantify the variability of the heavy ion environment. A comparison of these data to a model environment suggests some refinements to the model. LET spectra based on the worst case flare observed are presented to illustrate the significance of the flare ion distribution and the importance of accurate shielding estimates.
The Single Event Upset (SEU) response to 590 MeV protons
The presence of high-energy protons in cosmic rays, solar flares, and trapped radiation belts around Jupiter poses a threat to the Galileo project. Results of a test of 10 device types (including 1K RAM, 4-bit microP sequencer, 4-bit slice, 9-bit data register, 4-bit shift register, octal flip-flop, and 4-bit counter) exposed to 590 MeV protons at the Swiss Institute of Nuclear Research are presented to clarify the picture of SEU response to the high-energy proton environment of Jupiter. It is concluded that the data obtained should remove the concern that nuclear reaction products generated by protons external to the device can cause significant alteration in the device SEU response. The data also show only modest increases in SEU cross section as proton energies are increased up to the upper limits of energy for both the terrestrial and Jovian trapped proton belts.
Effects of cosmic rays on single event upsets
The efforts at establishing a research program in space radiation effects are discussed. The research program has served as the basis for training several graduate students in an area of research that is of importance to NASA. In addition, technical support was provided for the Single Event Facility Group at Brookhaven National Laboratory.
Experimental evidence for a new single-event upset (SEU) mode in a CMOS SRAM obtained from model verification
Modeling of SEU has been done in a CMOS static RAM containing 1-micron-channel-length transistors fabricated from a p-well epilayer process using both circuit-simulation and numerical-simulation techniques. The modeling results have been experimentally verified with the aid of heavy-ion beams obtained from a three-stage tandem van de Graaff accelerator. Experimental evidence for a novel SEU mode in an ON n-channel device is presented.
Single-event upset (SEU) in a DRAM with on-chip error correction
Results are given of SEU measurements on 256K dynamic RAMs with on-chip error correction. They are claimed to be the first ever reported. A (12/8) Hamming error-correcting code was incorporated in the layout. Physical separation of the bits in each code word was used to guard against multiple bits being disrupted in any given word. Significant reduction in observed errors is reported.
Single event upset (SEU) testing at JPL
It is believed that the increase in SEUs with more modern devices may have serious consequences for future space missions. The physics behind an SEU is discussed as well as SEU test philosophy and equipment, and testing results. It is concluded that the problem may be ameliorated by careful device selection and the use of redundancy or error correction.