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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The gathering of surface potential profiles by computerized processing of electrocardiogram data is projected. These profiles are concerned with the detail of localized potentials on the human body and are obtained by voltages plotted against electrode positions with time as the variable held constant. Sample and hold circuits are considered for processing the multiplexed signal and to digitize and code it for the tape recorder.
Doubly to singly charged mercury ion ratios in electron bombardment ion thruster exhaust beams have been determined as functions of bombardment discharge potential, thrust beam current, thrust beam radial position, acceleration-deceleration voltage ratio, and propellant utilization fraction. A mathematical model for two-step ionization processes has been derived, and calculated ion ratios are compared to observed ratios. Production of Hg(++) appears to result primarily from sequential ionization of Hg(+) in the discharge. Experimental and analytical results are presented, and design, construction, and operation features of an electrostatic deflection ion time-of-flight analyzer for the determination of the above-mentioned ratios are reviewed.
A new process referred to as ion plating by induction heating (IPIH) is described, which combines the advantages of both ion plating and induction heating. The IPIH apparatus consists of the specimen (cathode) to be coated and the evaporation heating source, which is a ceramic crucible containing the metal to be heated. The specimen is an internal part of the high-voltage ceramic-metal vacuum feedthrough and is connected to the negative terminal of the high-voltage power supply, the positive terminal of the power supply being grounded. The plating conditions are the same as those most commonly used in industrial ion plating. A number of metals - such as nickel, iron, platinum - which were practically impossible to deposit by resistance heating evaporation can now be effectively evaporated and deposited to any desired thickness. Excellent adherence is observed for many metals deposited on various metal surfaces in thicknesses from 0.15 to 50 microns, regardless of the materials selected for coating and substrate.
We have measured the dispersion in phase velocity of a Nb-SiO(x)-Nb microstrip transmission line resonator over a frequency range from 50 GHz to 800 GHz. A submicron Nb/Al-AlO(x)/Nb Josephson junction was used as a voltage-controlled oscillator to excite the high order modes in the resonator. The same junction is used as a direct detector resulting in a series of step-like structures in the DC current-voltage characteristic at the position of each mode frequency. The transmission line is dispersionless up to about 500 GHz where the phase velocity begins to decrease. This is well below the gap frequency f(sub g) approx. equals 700 GHz. Results agree qualitatively with the expected theoretical behavior near f(sub g). This onset of dispersion and loss in Nb transmission lines will have a significant impact on the design of submillimeter wave RF circuits.
An accelerator system and method that utilize dust as the primary mass flux for generating thrust are provided. The accelerator system can include an accelerator capable of operating in a self-neutralizing mode and having a discharge chamber and at least one ionizer capable of charging dust particles. The system can also include a dust particle feeder that is capable of introducing the dust particles into the accelerator. By applying a pulsed positive and negative charge voltage to the accelerator, the charged dust particles can be accelerated thereby generating thrust and neutralizing the accelerator system.
An electrostatic levitation system is described, which can closely control the position of objects of appreciable size. A plurality of electrodes surround the desired position of an electrostatically charged object, the position of the objects is monitored, and the voltages applied to the electrodes are varied to hold the object at a desired position. In one system, the object is suspended above a plate-like electrode which has a concave upper face to urge the object toward the vertical axis of the curved plate. An upper electrode that is also curved can be positioned above the object, to assure curvature of the field at any height above the lower plate. In another system, four spherical electrodes are positioned at the points of a tetrahedron, and the voltages applied to the electrodes are varied in accordance with the object position as detected by two sensors.
Corona discharges arise due to ionization of air or gas subject to high electric fields. The free electrons and ions contained in these discharges interact with molecules of insulating materials, resulting in chemical changes and destroying the electrical insulating properties. The paper describes some results of measurements aimed at determining corona pulse waveforms, their repetition rate, and amplitude distribution during various randomly-sampled identical time periods of a 60-Hz high-voltage wave. Described are properties of positive and negative corona impulses generated from typical conductors at various test high voltages. A possible method for calculating the energies, densities, and electromagnetic interferences by making use of these results is suggested.
Two-stage temperature stabilized circuit using two transistors is described. Increase in temperature causes the base-to-emitter voltage of n-p-n transistor to become less positive whereas the base-to-emitter voltage of p-n-p transistor becomes less negative, so the temperature-induced variation in V sub 1 and V sub 2 cancel out.
A TWT collector has axially-positioned collector stages in which at least one of the stages includes a plurality of annularly-arranged stage segments. The collector enhances electron beam velocity sorting by facilitating a combination of (a) selecting axial electric field distributions with application of selected voltages to the axially-positioned collector stages and (b) selecting radial electric field distributions with application of selected voltages to the annularly-arranged stage segments.
Voltages across diametrically opposite contact pairs on the outer surface of superconducting Nb tubes are found to depend dramatically upon the spatial configuration of the voltage-measuring leads relative to the positions of the moving magnetic flux lines. Experiments have been conducted to study these voltages for different wall thicknesses and for a variety of arrangements of the leads when flux in the hole and the wall of the Nb tube is made to exit or enter, completely or partially, by applying heat at a narrow strip along its length. Using the critical-state concept, a model for the change of flux and the resulting electric fields in the Nb tube on application of a heat pulse is presented. The resulting time-dependent and time-integrated voltages are calculated in excellent quantitative agreement with the experimental results. These results show that the flux-flow voltages across two contact points on a superconductor arise from the generation of an induced electric field over a chosen path in the superconductor between the contact points and from a change of magnetic flux through the surface bounded by the measuring leads and the chosen path in the superconductor.
This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate JHEMT differs from all existing GaN FinFETs and tri-gate HEMTs, as they employ a Schottky or a metal-insulator-semiconductor (MIS) gate stack. A tri-gate GaN JHEMT is fabricated using p-type NiO with the gate metal forming an Ohmic contact to NiO. The device shows minimal hysteresis and a subthreshold slope of 63 ± 2 mV/decade with an on-off current ratio of 10 8 . Compared to the tri-gate MISHEMTs fabricated on the same wafer, the tri-gate JHEMTs exhibit higher threshold voltage (V TH ) and achieve positive V TH without the need for additional AlGaN recess. In addition, this tri-gate JHEMT with a fin width of 60 nm achieves a breakdown voltage (BV) > 1500 V (defined at the drain current of 1 μA/mm at zero gate bias) and maintains the high BV with the fin length scaled down to 200 nm. In comparison, the tri-gate MISHEMTs with narrower and longer fins show punch-through at high voltages. Moreover, when compared to planar enhancement mode HEMTs, tri-gate JHEMTs show significantly lower channel sheet resistance in the gate region. Finally, these results illustrate a stronger channel depletion and electrostatic control in the junction tri-gate compared to the MIS tri-gate and suggest great promise of the tri-gate GaN JHEMTs for both high-voltage power and low-voltage power/digital applications.
Flight tests have demonstrated the effectiveness of an array of hot-film sensors using constant voltage anemometry to determine shock position on a wing or aircraft surface at transonic speeds. Flights were conducted at the NASA Dryden Flight Research Center using the F-15B aircraft and Flight Test Fixture (FTF). A modified NACA 0021 airfoil was attached to the side of the FTF, and its upper surface was instrumented to correlate shock position with pressure and hot-film sensors. In the vicinity of the shock-induced pressure rise, test results consistently showed the presence of a minimum voltage in the hot-film anemometer outputs. Comparing these results with previous investigations indicate that hot-film anemometry can identify the location of the shock-induced boundary layer separation. The flow separation occurred slightly forward of the shock- induced pressure rise for a laminar boundary layer and slightly aft of the start of the pressure rise when the boundary layer was tripped near the airfoil leading edge. Both minimum mean output and phase reversal analyses were used to identify the shock location.
The author summarizes the results of theoretical studies of the interaction of an uninsulated, spherical, high voltage (10's of KV positive) probe with the ionospheric environment. The focus of this effort was the phenomenon of electron trapping and its implications for breakdown processes (collisional regime) and the current-voltage relationship governing current collection (collisionless regime) in space-based pulsed power systems with high voltage components exposed to space, e.g., the SPEAR I experiment.
A system for monitoring electrostatic charge buildup and electrostatic discharge (ESD) remotely comprises a plurality of electrostatic charge measurement units and a data acquisition device. Each electrostatic charge measurement unit includes a primary charge plate, a static sensor device, a secondary charge plate, and a shielded cable. The primary charge plate is positioned proximal to an object. The static sensor device includes an input sensor at which an electric voltage is measured and outputs an electronic signal whose level varies according to the measured electric voltage. The secondary charge plate is positioned in proximity to the input sensor of the static sensor device. The shielded cable includes an inner conductor electrically connected to the primary charge plate and the secondary charge plate and an outer conductor electrically connected to electrical ground. The data acquisition device receives the electronic signal from the static sensor device of each electrostatic charge measurement unit.
Nonlinear relationships among current, voltage, and length stored in electronic memory. Conceptual microprocessor-based control subsystem maintains constant length of welding arc in gas/tungsten arc-welding system, even when welding current varied. Uses feedback of current and voltage from welding arc. Directs motor to set position of torch according to previously measured relationships among current, voltage, and length of arc. Signal paths marked "calibration" or "welding" used during those processes only. Other signal paths used during both processes. Control subsystem added to existing manual or automatic welding system equipped with automatic voltage control.
This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.
This paper presents a novel grid-forming voltage control strategy for a battery energy storage system to maintain balanced three-phase output voltages when serving unbalanced loads. A stationary reference frame (αβ) based control scheme is proposed to regulate positive-sequence and negative-sequence voltages. Compared with the conventional rotating reference frame (dq) based control scheme, the proposed scheme shows better dynamic performance. Then, we analyze the system zero-sequence network and propose adding a grounding transformer to the Y/Yg connected output transformer to further reduce the voltage unbalance at the point of common coupling. The simulation results demonstrate the effective performance of the proposed voltage control scheme. Based on the results, the power-voltage unbalance curve is derived for different output transformer configurations to establish the relationship between the power unbalance limit and the voltage unbalance limit for microgrid power scheduling.
A phase detector for the three phase power factor controller (PFC) is described. The phase detector for each phase includes an operational amplifier which senses the current phase angle for that phase by sensing the voltage across the phase thyristor. Common mode rejection is achieved by providing positive feedback between the input and output of the voltage sensing operational amplifier. this feedback preferably comprises a resistor connected between the output and input of the operational amplifier. The novelty of the invention resides in providing positive feedback such that switching of the operational amplifier is synchronized with switching of the voltage across the thyristor. The invention provides a solution to problems associated with high common mode voltage and enables use of lower cost components than would be required by other approaches.