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A fast electron gun with subanosecond rise- and decay-times and 100 ma. peak beam current has been developed for delayed coincidence studies of atomic decays. The gun is fabricated from an inexpensive tetrode Nuvistor, involving only slight modification.
A fast electron gun with subnanosecond rise and decay times and 100 mA peak beam current has been developed for delayed coincidence studies of atomic decays. The gun is fabricated from an inexpensive tetrode nuvistor, only slightly modified. The electron gun system has been successfully used in a delayed concidence study of fast decays of ionized helium.
The effects of environmental humidity on the flow characteristics of PS304 feedstock have been investigated. Angular and spherical BaF2-CaF2 powder was fabricated by comminution and by atomization, respectively. The fluorides were added incrementally to the nichrome, chromia, and silver powders to produce PS304 feedstock. The powders were dried in a vacuum oven and cooled to a Tom temperature under dry nitrogen. The flow of the powder was studied from 2 to 100 percent relative humidity (RH) The results suggest that the feedstock flow is slightly degraded with increasing humidity below 66 percent RH and is more affected above 66 percent RH. There was no flow above 88 percent RH. Narrower particle size distributions of the angular fluorides allowed flow up to 95 percent RH. These results offer guidance that enhances the commercial potential for this material system.
Atomic Layer Deposition has been instrumental in providing a deposition method for multiple space flight applications. It is well known that ALD is a cost effective nanoadditive-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. Through the introduction of paired precursor gases, thin films can be deposited on a myriad of substrates from flat surfaces to those with significant topography. By providing atomic layer control, where single layers of atoms can be deposited, the fabrication of metal transparent films, precise nano-laminates, and coatings of nano-channels, pores and particles is achievable. The feasibility of this technology for NASA line of business applications range from thermal systems, optics, sensors, to environmental protection. An overview of this technology will be presented.
A key technology development driver in environmental control systems and next generation optics are discussed utilizing thin film development borrowed from the semiconductor industry. The optical and physical properties of spacecraft radiator coatings are dictated by orbital environmental conditions. For example, coatings must adequately dissipate charge buildup when orbital conditions, such as polar, geostationary or gravity neutral, result in surface charging. Current dissipation techniques include depositing a layer of ITO (indium tin oxide) on the radiator surface in a high temperature process. The application of these enhanced coatings must be such that the properties in question are tailored to mission-specific requirements. The multi-billion-dollar semiconductor industry has adopted Atomic Layer Deposition (ALD) for self-assembly and atomic-scale placement. ALD is a cost-effective nanoadditive-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. By using ALD, modification of these coatings can be accomplished during coating application preprocessing. The preprocessing is rendered directly on the coating dry pigment before binding. Through the introduction of paired precursor gases, thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, metals, powders, and other high aspect-ratio micro- and nano- structures. By providing atomic-level control, where single layers of atoms can be deposited, the fabrication of metal transparent films, precise nano-laminates, and coatings of nano-channels and pores is achievable. A method has been demonstrated for the ALD of In2O3 and films on a variety of substrates from Si(100) wafers, glass slides, and on Z93P pigments resulting in a direct spaceflight application. Results will be presented that verify the chemical composition of ALD pigments and charge dissipation properties when the pigment goes through its binding and coating process and we present early results of ALD for carbon nanotube formation and encapsulation.
A key technology development driver in environmental control systems and next generation optics are discussed utilizing thin film development borrowed from the semiconductor industry. The optical and physical properties of spacecraft radiator coatings are dictated by orbital environmental conditions. For example, coatings must adequately dissipate charge buildup when orbital conditions, such as polar, geostationary or gravity neutral, result in surface charging. Current dissipation techniques include depositing a layer of ITO (indium tin oxide) on the radiator surface in a high temperature process. The application of these enhanced coatings must be such that the properties in question are tailored to mission-specific requirements. The multi-billion-dollar semiconductor industry has adopted Atomic Layer Deposition (ALD) for self-assembly and atomic-scale placement. ALD is a cost-effective nanoadditive-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. By using ALD, modification of these coatings can be accomplished during coating application preprocessing. The preprocessing is rendered directly on the coating dry pigment before binding. Through the introduction of paired precursor gases, thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, metals, powders, and other high aspect-ratio micro- and nano- structures. By providing atomic-level control, where single layers of atoms can be deposited, the fabrication of metal transparent films, precise nano-laminates, and coatings of nano-channels and pores is achievable. A method has been demonstrated for the ALD of In2O3 and films on a variety of substrates from Si(100) wafers, glass slides, and on Z93P pigments resulting in a direct spaceflight application. Results will be presented that verify the chemical composition of ALD pigments and charge dissipation properties when the pigment goes through its binding and coating process and we present early results of ALD for carbon nanotube formation and encapsulation.
Manned spacecraft venturing beyond the Earth’s Van Allen Belts will be subjected to high levels of radiation from both energetic particles emanating from the sun and from galactic atomic events, such as supernovae. The metal shell of a spacecraft offers some protection from gamma radiation and high energy particles originating from both the sun and cosmic sources. The interaction of these high energy particles and radiation with the spacecraft hull create secondary radiation and neutrons, additional hazards for astronauts and electronic systems. Shielding of neutrons is the most challenging of the high energy radiation, since neutrons have zero charge and are least affected by electrical fields, magnetic fields, and atomic forces. Previous studies showed that polyethylene is an effective neutron shielding material, due to its high hydrogen content. High energy neutrons are slowed to thermal neutrons through multiple collisions with the hydrogen atoms, increasing the effectiveness of neutron capture by boron-10 atoms. This study discusses the fabrication and testing of polyvinyl alcohol (PVOH) samples as a neutron shielding material, with comparison to medium density polyethylene (MDPE) composite samples to be used for neutron shielding for spacecraft. PVOH, an aqueous polymer, was chosen for hydrogen content and for enabling the use of organic reinforcement such as cellulose for secondary structural composites. OLTARIS (On-Line Tool for the Assessment of Radiation in Space) was used for radiation shielding simulation and compared with experimental data. Modeling indicates that the most effective shielding from radiation was in an aluminum layer backed by a polymer layer, either MDPE or PVOH. Cross-linked PVOH was also included in the OLTARIS modeling. All 3 polymer cases showed shielding improvement over aluminum alone, with similar dose equivalent reduction for galactic cosmic radiation(GCR)and for radiation from a solar particle event (SPE). Fourier Transform Infrared (FTIR) Spectroscopy was used to confirm the cross-linking in the PVOH sample and to determine the uniformity through the thickness. PVOH, cross-linked PVOH, and MDPE samples were tested for neutron shielding effectiveness using a 1 curie Americium-Beryllium neutron source. Test results indicated the most shielding in the cross-linked PVOH, followed by the pristine PVOH, and MDPE. Neutron testing suggests that polyvinyl alcohol is a good alternative to polyethylene for neutron shielding. The neutron shielding materials, PVOH and cross-linked PVOH developed under this research will enable the safe operation of spacecraft beyond the Earth’s protective Van Allen Radiation Belts. It will be crucial for NASA’s manned missions to the Moon or Mars to protect the health of astronauts and equipment from the harmful effects of excessive radiation.
A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.
Constructing single atom catalysts with fine-tuned coordination environments can be a promising strategy to achieve satisfactory catalytic performance. Herein, via a simple calcination temperature-control strategy, CeO 2 supported Pt single atom catalysts with precisely controlled coordination environments are successfully fabricated. The joint experimental and theoretical analysis reveals that the Pt single atoms on Pt 1 /CeO 2 prepared at 550 °C (Pt/CeO 2 -550) are mainly located at the edge sites of CeO 2 with a Pt–O coordination number of ca. 5, while those prepared at 800 °C (Pt/CeO 2 -800) are predominantly located at distorted Ce substitution sites on CeO 2 terrace with a Pt–O coordination number of ca. 4. Pt/CeO 2 -550 and Pt/CeO 2 -800 with different Pt 1 -CeO 2 coordination environments exhibit a reversal of activity trend in CO oxidation and NH 3 oxidation due to their different privileges in reactants activation and H 2 O desorption, suggesting that the catalytic performance of Pt single atom catalysts in different target reactions can be maximized by optimizing their local coordination structures.
Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.
Actoprobe LLC reports on the results of its DOE SBIR Phase II/IIA project on the development of Atomic Force Microscope Active Optical Probe for Single-Molecule Imaging and Time-Resolved Optical Spectroscopy. While chemistry science and technology greatly benefit from Atomic Force Microscopy in surface characterization, time-resolved chemical imaging on the single-molecule level lags far behind. Current scanning probe microscopy only obtains information about mechanical but not optical/chemical properties. To address this problem, the Actoprobe LLC research team has proposed a novel class of Atomic Force Microscopy probes, Ultra-Fast Pulsed Active Atomic Force Microscopy Optical Probes (UFP AAOPs), that will allow ultrafast time-resolved optical and chemical imaging at the nanoscale. As envisioned, these unique optical probes will perform the functions of conventional Atomic Force Microscopy probes and, in addition, will simultaneously provide chemical information about molecular scale interactions. This innovation is accomplished by integrating an ultrafast pulsed Quantum Dot laser source into an Atomic Force Microscopy probe. This report describes our progress with the fabrication of an ultrafast micrometer-size semiconductor laser, based on “artificial atoms” - Quantum Dots, integrated with an Atomic Force Microscopy probe. In this Phase II/IIA project, we have demonstrated the feasibility of the UFP AAOP concept by fabricating a first prototype of the UFP AAOP. The excellent performance of the probe has been proven in terms of AFM and optical spatial resolution through rigorous tests. The UFP AAOP provides pulses with less than 4 ps duration and higher than 11 GHz repetition rate, and spatial resolution better than 300 nm at 1240 nm wavelength. Technically, it is possible to reduce the pulse width to less than 1 ps and to improve lateral resolution to ~ 0.5 nm, which implies the potential capability for the probe to characterize chemical compounds with single-molecule resolution. The UFP AAOP fabrication procedure has been developed for wafer-scale production of multiple devices, with the yield of the process estimated to be lower than 1% with the limited fabrication capabilities and equipment available for use in the research project. However, using high-volume production tools and special GaAs processing equipment, the yield can be significantly improved, theoretically to ~ 50%. Finally, economic feasibility and scale-up manufacturing potential were analyzed for UFP AAOP and found to be very promising. In summary, the Actoprobe team has successfully demonstrated the feasibility of the UFP AAOP concept.
Here, we demonstrate atomic magnetometry using a metasurface polarizing beamsplitter fabricated on a silicon-on-sapphire (SOS) platform. The metasurface splits a beam that is near-resonant with the rubidium atoms (795 nm) into orthogonal linear polarizations, enabling the measurement of magnetically sensitive circular birefringence in rubidium vapor through balanced polarimetry. We incorporated the metasurface into an atomic magnetometer based on nonlinear magneto-optical rotation and measured subnanotesla sensitivity, which is limited by low-frequency technical noise and transmission loss through the metasurface. To our knowledge, this work represents the first demonstration of SOS nanophotonics for atom-based sensing and paves the way for highly integrated, miniaturized atomic sensors with enhanced sensitivity and portability.
Abstract Single atoms of platinum group metals on CeO 2 represent a potential approach to lower precious metal requirements for automobile exhaust treatment catalysts. Here we show the dynamic evolution of two types of single-atom Pt (Pt 1 ) on CeO 2 , i.e., adsorbed Pt 1 in Pt/CeO 2 and square planar Pt 1 in Pt AT CeO 2 , fabricated at 500 °C and by atom-trapping method at 800 °C, respectively. Adsorbed Pt 1 in Pt/CeO 2 is mobile with the in situ formation of few-atom Pt clusters during CO oxidation, contributing to high reactivity with near-zero reaction order in CO. In contrast, square planar Pt 1 in Pt AT CeO 2 is strongly anchored to the support during CO oxidation leading to relatively low reactivity with a positive reaction order in CO. Reduction of both Pt/CeO 2 and Pt AT CeO 2 in CO transforms Pt 1 to Pt nanoparticles. However, both catalysts retain the memory of their initial Pt 1 state after reoxidative treatments, which illustrates the importance of the initial single-atom structure in practical applications.
Atomic layer-by-layer molecular beam epitaxy (ALL-MBE) is a sophisticated technique to synthesize high-temperature superconductor (HTS) materials. ALL-MBE produces single-crystal HTS films with atomically smooth surfaces and interfaces, as well as precise multilayer heterostructures engineered down to a single atomic layer level. This enables the fabrication of tunnel junctions, nanowires, nanorings, and other HTS devices of interest. Our group has focused on ALL-MBE synthesis and materials science of La 2–x Sr x CuO 4 (LSCO), a representative HTS cuprate. In the past two decades, we have synthesized over three thousand LSCO thin films and characterized them by a range of analytical techniques. Here, we present in full detail a systematic process for the synthesis and engineering of atomically perfect LSCO films. The procedure includes the preparation of substrates, calibration of the elemental sources, the recipe for ALL growth of LSCO films without any secondary-phase precipitates, post-growth annealing of the films, and ex situ film characterization. This report should aid replication and dissemination of this technique of synthesizing single-crystal LSCO films for basic research as well as for HTS electronic applications.
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The growth of the information era economy is driving the pursuit of advanced materials for microelectronics, spurred by exploration into “Beyond CMOS” and “More than Moore” paradigms. Atomically thin 2D materials, such as transition metal dichalcogenides (TMDCs), show great potential for next-generation microelectronics due to their properties and defect engineering capabilities. This perspective delves into atomic precision processing (APP) techniques like atomic layer deposition (ALD), epitaxy, atomic layer etching (ALE), and atomic precision advanced manufacturing (APAM) for the fabrication and modification of 2D materials, essential for future semiconductor devices. Additive APP methods like ALD and epitaxy provide precise control over composition, crystallinity, and thickness at the atomic scale, facilitating high-performance device integration. Subtractive APP techniques, such as ALE, focus on atomic-scale etching control for 2D material functionality and manufacturing. In APAM, modification techniques aim at atomic-scale defect control, offering tailored device functions and improved performance. Achieving optimal performance and energy efficiency in 2D material-based microelectronics requires a comprehensive approach encompassing fundamental understanding, process modeling, and high-throughput metrology. Finally, the outlook for APP in 2D materials is promising, with ongoing developments poised to impact manufacturing and fundamental materials science. Integration with advanced metrology and codesign frameworks will accelerate the realization of next-generation microelectronics enabled by 2D materials.
Pushered single shell (PSS) has emerged as an alternative platform of implosion to ease the stability issue at the ablation front. The design consists of a thin inner Be layer, a 50% Cr:Be plateau region, an S-curve gradient, a low Cr (1.5%) tamper layer, and followed by a pure Be outer layer. General Atomics has developed a way to fabricate the higher-Z Cr to lower-Z Be gradients on glow discharge polymer mandrels with a designed S-shape profile for optimal implosion stability using magnetron sputtering. Microstructure analysis of the gradient coating indicated that at lower Cr concentration a short order or amorphous structure was formed. Here, these fabricated PSS capsules were subsequently built into capsule fill tube assemblies, verified to be leak tight at both ambient and cryogenic conditions, and delivered to Lawrence Livermore National Laboratory for the shots. The capsule thermal stability was demonstrated by invariable Cr profiles before and after pyrolysis. However, cracking at inner Cr layers was observed, which has been attributed to thermal stress.
Heteroepitaxy on colloidal semiconductor nanocrystals is an essential strategy for manipulating their optoelectronic functionalities. However, their practical synthesis typically leads to scattered and unexpected outcomes due to the intervention of multiple reaction pathways associated with complicated side products of reactants. Here, the heteroepitaxy mechanism of zinc chalcogenide initiated on indium phosphide (InP) colloidal nanocrystals is elucidated using the precursors, zinc carboxylate and trialkylphosphine selenide. The high magnetic receptivity of 77 Se and the characteristic longitudinal optical phonon mode of ZnSe allowed for monitoring the sequence of epilayer formation at the molecular level. The investigation revealed the sterically hindered acyloxytrialkylphosphonium and diacyloxytrialkylphosphorane to be main intermediates in the surface reaction, which retards the metal ion adsorption by a large steric hindrance. The transformation of adsorbates to the crystalline epilayer was disturbed by surface oxides. Raman scattering disclosed the pathway of secondary surface oxidation triggered by carboxylate ligands migrated from zinc carboxylate. The surface-initiated heteroepitaxy protocol is proposed to fabricate core/shell heterostructured nanocrystals with atomic-scale uniformity of epilayers. Despite the large lattice mismatch of ZnS to InP, we realised a uniform and interface defect-free ZnS epilayer (~0.3 nm thickness) on InP nanocrystals, as evidenced by a high photoluminescence quantum yield of 97.3%.