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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Athermal phonon collection efficiency in diamond crystals for low mass dark matter detection

Here, we explored the efficacy of lab-grown diamonds as potential target materials for the direct detection of sub-GeV dark matter (DM) using metallic magnetic calorimeters (MMCs). Diamond, with its excellent phononic properties and the low atomic mass of the constituent carbon, can play a crucial role in detecting low mass dark matter particles. The relatively long electron-hole pair lifetime inside the crystal may provide discrimination power between the DM-induced nuclear recoil events and the background-induced electron recoil events. Utilizing the fast response times of the MMCs and their unique geometric versatility, we deployed a novel methodology for quantifying phonon dynamics inside diamond crystals. We demonstrated that lab-grown diamond crystals fabricated via the chemical vapor deposition (CVD) technique can satisfy the stringent quality requirements for sub-GeV dark matter searches. The high-quality polycrystalline CVD diamond showed a superior athermal phonon collection efficiency compared to that of the reference sapphire crystal, and achieved energy resolution 62.7 eV at the 8.05 keV copper fluorescence line. With this energy resolution, we explored the low-energy range below 100 eV and confirmed the existence of so-called low-energy excess (LEE) reported by multiple cryogenic experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

High Efficiency Evaporated CdSeTe/CdTe Solar Cells With and Without MgZnO Buffer Layer

High efficiencies of ~19% CdTe solar cell devices were made using a thermal evaporation technique to deposit absorber layers of CdSe and CdTe. The absorber films were very high quality for a device fabrication, and with demonstrated high efficiency, it is a viable option to employ thermal evaporation in research and manufacturing. We also investigated four different interfaces scenarios of with and without MZO and CdSe in the device near front interface. The results clearly indicate that Se plays a key role in improving device performance, but the MZO is not necessarily required unless experiment goals demanded. Removing the MZO layer from the device structure and being able to use thermal evaporator for CdTe deposition will help with cost reduction in manufacturing.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2023

Synthesis and optical properties of phosphorus doped ZnO: X-ray absorption, X-ray emission, and X-ray excited optical luminescence studies

Abstract Over the past decades, zinc oxide semiconductor and its derivatives have been extensively developed because of its optoelectronic properties. Since ZnO is an intrinsic n-type semiconductor, how to synthesize high-quality p-type ZnO semiconductors and investigate their optoelectronic properties and local chemical structures are important and necessary. In this article, two studies of synthesizing both undoped and phosphorus-doped ZnO nanostructures by hydrothermal method and chemical vapor deposition (CVD) technique are presented. Scanning electron microscopy (SEM) and laboratory X-ray diffraction (XRD) are used to track the surface morphology and the crystalline structure of both undoped and phosphorus doped ZnO nanostructures, respectively. X-ray absorption near edge structures (XANES), X-ray emission spectroscopy (XES) and X-ray excited optical luminescence (XEOL) are also used to determine the local chemical information of both undoped and phosphorus-doped ZnO nano/microstructures such as local symmetry and optical properties. It is found that the phosphorus is successfully doped into the surface of ZnO and substituted the Zn. The phosphorus-doped ZnO products have better crystallinity and less oxygen vacancies on the surface. These two are correlated as one leads to the other. The XEOL results suggest that the average bandgap for undoped and phosphorus doped ZnO is the same, 3.24 eV. The second derivative of the absorption-emission spectra yields the fundamental bandgap for undoped ZnO and phosphorus-doped ZnO is 3.25 eV. The implication of this observation is discussed.

Chemistry↗
DOE OSTI2021

Growth and Development of Quantum Materials

Topological insulators (TIs) display a new state of quantum matter, which is broadly known as quantum materials. The TIs have a unique property of being an insulator as a bulk property and having conducting surface states, which are symmetry-protected Dirac Fermions and well isolated from the bulk valence and conduction bands. Ideally, these topological surface states and bulk electronic states should act independently. The degree to which they intermix depends on the crystalline quality, composition and defects present in the material. These materials thus demand very high-quality crystals to observe the desired quantum properties. We proposed growth of high-quality single crystals and thin films to enhance the ability to fabricate devices with unique performance attributes. Two separate approaches will be made to make the thin films, one is exfoliation of 2D monolayer from the grown single crystals and the second is thin films grown by pulsed laser deposition. Both techniques will subsequently allow for fabrication of meso structures using a Focused Ion Beam technique.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of Performance Degradation Mechanisms in Low-Cost High Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Characterization and mitigating performance limiting defects in Silicon (Si) PV is one of key areas to be addressed to improve PV hardware costs and energy yield in order to lower the levelized cost of energy (LCOE) of installed PV cost to $0.02/kWh. As Si PV cells efficiencies have surpassed 22% and approaching 23%, the recombination at the metal contacts have become the focus point to be addressed. Passivated contact technologies—having a heterojunction with a band-gap larger than silicon between the metal and silicon—have emerged as a great potential for future highand ultrahigh-efficiency solar cells, as it concurrently reduces recombination and increases carrier selectivity, by incorporating thin films within the contact structure. Passivated contact Si solar cell technologies use a wide variety of tunnel layers—playing a crucial role to passivate metal contacts and tunnel charge carriers—including stoichiometric silicon oxide (SiO 2 ) grown by thermal oxidation and Low-Pressure Chemical Vapor Deposition (LPCVD) technique and silicon oxide (SiO x ) by hot nitric acid. However, thorough investigations on understanding the failure and performance degradation mechanisms associated with tunnel layers are still limited to date. Unlocking those degradation characteristics in crucial tunnel layers could improve the reliability and energy yield of passivated contact Si solar cells. Besides, the technique of growing aforementioned tunneling layers are low throughput, and requires high temperature processes and/or a vacuum environment. In this project, we investigated the performance degradation mechanisms of a low-cost high-throughput ozonated oxide (DI-O 3 ) tunnel layer for the passivated contact Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2021

Method of fabricating photosensitive devices with reduced process-temperature budget

A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.

Kay, Randolph R.↗
DOE OSTI2021

Characterizing The Internal Morphology of Transition Regions in Large-Scale Extrusion Deposition Additive Manufacturing

A dual-hopper feed system that was developed for the Big Area Additive Manufacturing (BAAM) system allows for transitioning between different materials while maintaining continuous deposition. This technique creates a step-change in material feedstock by switching the pellet feeding system to alternate which hopper is currently supplying material, allowing for multi-material construction. The step-change in feedstock material produces a transition region that is characterized by a compositional gradient and blended internal morphology. Initial cross-sectional imaging of the transition region revealed a non-homogenous blend of materials with distinct domains of each material, likely due to incomplete mixing within the screw. This study used a carbon fiber reinforced acrylonitrile butadiene styrene (CF-ABS) and an unfilled ABS to characterize the internal structure and to correlate it to mechanical performance by tracking microhardness across cross-sections of the transition region.

Brackett, James↗
DOE OSTI2025

Investigation of residual stress distribution in wire-arc directed energy deposited refractory molybdenum alloy utilizing numerical thermo-mechanical analysis and neutron diffraction method

Directed energy deposition (DED), a metal additive manufacturing (AM) technique, offers higher deposition rates and energy efficiency, making it suitable for fabricating components from refractory molybdenum alloys, such as molybdenum-titanium-zirconium (TZM). However, large thermal gradients and non-equilibrium thermal cycles in DED could generate high residual stress in the component, potentially deteriorating quality and performance. Thus, this study aims to investigate residual stress generation and its distribution in wire-arc DED of TZM thin-wall, utilizing thermo-mechanical analysis and high-fidelity neutron diffraction (ND) method. Two interpass temperatures (50°C and 200°C) have been considered to investigate their impact on residual stress formation. During experiments, in-situ thermal data has been recorded using thermocouples, which have been utilized for calibrating the thermal model. Thermocouple data shows a good agreement with the simulation results, having a difference of less than 10 %. Post-deposition part deformation has been observed, which is measured using a coordinate measuring machine, showing maximum values of 0.93 mm and 0.78 mm for interpass temperatures of 50°C and 200°C, respectively. Numerical predictions of distortion deviated by less than 15% from the experimental results. ND measurement and simulation results indicate that residual stress magnitude and evolution vary across the TZM deposits, revealing microstructural anisotropy in both conditions. Notably, lower interpass temperatures resulted in higher residual stresses, confirmed by experimental and simulation data. Further, this study demonstrated that an integrated experimental and thermo-mechanical analysis can potentially reveal the temperature history, part deformation, and residual stress formation in wire-arc DED TZM alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Mechanical and chemical properties of PVD and cold spray Cr-coatings on Zircaloy-4

In this paper, accident-tolerant fuel (ATF) cladding materials aim to improve fuel reliability and safety during accident scenarios in water-cooled reactors. These ATF cladding should also perform comparable or better than the current zirconium alloy cladding under reactor normal operating conditions. Surface-modified Zircaloy-4 was produced by depositing a protective coating of chromium by two different coating techniques, Physical Vapor Deposition (PVD) and Cold Spray (CS). The coating thickness, structure, composition, and mechanical properties of the coated Zircaloy were assessed with advanced materials characterization techniques. Results showed a strengthening effect of the Cr-coating, along with ~83% higher hardness compared to that of the Zircaloy-4 substrate. Surface topography and surface chemistry of the Cr-coated Zircaloy-4 were assessed with contact profilometry, atomic force microscopy, contact angle goniometry, and X-ray photoelectron spectroscopy. Deposited Cr-coating significantly improved surface wettability compared to the substrate Zircaloy-4. The formation of surface oxides on the coatings by prolonged exposure to ambient air showed a further increase in the hydrophobic behavior. Surface parameters and surface chemistry after flow boiling critical heat flux tests, conducted at atmospheric pressure, evidenced a slight increase in surface roughness with notable changes in wettability associated with the formation of surface oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Characterization of Nb films with varying RRR values at low temperatures [Poster]

Superconducting properties of Nb in microwave fields vary significantly with lattice defects and impurity content, where sub-at.% impurity level can reduce or increase microwave surface resistance by an order of magnitude. In this study, we studied the microwave properties of Nb films, deposited by different PVD techniques, at low microwave fields correlating microwave properties at dilution fridge temperatures with material properties characterized with surface science techniques. We are studying the microwave properties of Nb films, deposited by different PVD techniques, at low microwave fields and low temperatures. The first Nb film, deposited onto an elliptical niobium cavity by HiPIMS technique at CERN, was tested at low temperatures. The first results show that film performance was similar to that of the bulk niobium cavities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

A tutorial on the micro-trench technique for incident ion angle, material erosion, and impurity deposition measurements at plasma-facing surfaces

The micro-trench method is a new technique to measure polar and azimuthal incident ion angles, material erosion, and impurity deposition at plasma-facing surfaces, and has been applied in the DIII-D divertor. This article gives a tutorial of the micro-trench technique consisting of six steps: (1) micro-trench fabrication, (2) pre-exposure measurement of the fabricated micro-trench geometry, (3) tracer material deposition, (4) plasma exposure, (5) post-exposure observation of the tracer material, and (6) post-exposure measurement of the micro-trench geometry. Two criteria need to be satisfied to apply the micro-trench method successfully: (i) uniform impurity deposition on the micro-trench floor, and (ii) erosion dominated by the physical sputtering induced by the impinging ions. Furthermore, when those two criteria are satisfied, post-exposure analysis of the impurity deposition patterns on the micro-trench floor may be used to determine the polar and azimuthal incident ion directions (mean values of the ion angle directions), erosion rate, and impurity deposition rate during plasma exposure without computational interpretation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Intentional Uranium Tagging for Material Provenance and Pathway Forensics (LA19-Intentional-Forensics-NDD3Bb) (Annual Report for FY21)

This report describes the outcomes of the third and final year of a project to research the feasibility of tagging uranium materials, especially nuclear fuels. The experimental focus remained on metallic uranium forms under prospective surface and bulk tagging scenarios. Overall, the results showed that the tags could be successfully imparted and characterized in both as-built and degraded conditions. This was in line with expectations coming into this project, indicating promise for both surface and bulk tagging of metallic forms of uranium. Multiple surface tagging techniques and detection strategies were explored in FY21, with an emphasis on improving tag quality, readability, and detection in the field. Non-radioactive materials were used as a testbed. Selective deposition via laser beam was determined to be successful in imparting a readable titanium deposit on a stainless steel base plate, and can be read with high resolution characterization techniques (e.g., scanning electron microscopy) and field capable tools (e.g., eddy current testing). Other deposition techniques, such as selective deposition via electron beam and photoluminescent tags, were explored in FY21, and while success for these techniques would be dependent on additional work, these techniques showed potential for surface tagging applications. To survey bulk taggant elements for bulk uranium metal, 16 tagging elements were spread among 18 depleted uranium castings (4 baseline, 3 mix, 1 dilution, and 10 recycle). Most of these were made and characterized in FY21. Taggant acceptability was based upon manufacturability, detectability, and persistence from the standpoint of two detection options: bulk chemical analysis (for “chemical taggants”) and microstructural analysis (for “second phase taggants”). Taggant detection in both up-front manufacturing and in the face of “degradations” such as dilution, mixing, and recycling was generally good. Two independent laboratories carried out chemical analysis on most of the castings, and often at several locations within a casting, and the results are discussed. Scanning electron microscopy+EDS microanalysis revealed the second phases mostly contained the expected tagging elements. The shapes and 2 spatial distributions of these micron-sized carbides, oxides, and intermetallic particles offers opportunities for further science-based investigation and tagging optimization. Overall, V and Co currently appear as the best choices for chemical taggants while Al, Ti, Mn, Co, Pd, and Tb all look good as second phase taggants. The other elements considered here – Sc, Ni, Ge, Nb, Ce, Ta, W, Ir, and Au – while not being ruled out, require more study to become viable options. It is of special note that in the recycling study only one of the 12 elements fell out of detection even after 10 meltings, demonstrating their persistence. An Appendix tabulates all chemical analysis results to enable more quantitative and statistical studies of detection opportunities and limitations, as a part of a related project.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of Codeposition on Methylammonium Iodide Degradation during Vapor Transport Deposition

Vapor transport deposition (VTD) is one manufacturing-compatible technique for large-scale deposition of perovskite films. However, to date, little understanding has been given to degradation products formed by perovskites grown under vacuum. Here, we use methylammonium iodide (MAI) as an example organic precursor to identify degradation patterns through both the sublimation process and transport through a zone with temperatures much higher than MAI can thermodynamically survive. We show that degradation due to sublimation effects MAI powders and subsequent integration into methylammonium lead iodide (MAPbI3) films differently than degradation solely due to material transport through a very high-temperature zone. Additionally, we categorize common post-deposition treatments by their influence on the degradation products seen in MAPbI3 films. Furthermore, with these results we give recommendations for VTD reactor design and the feasibility of co-deposition as a film growth technique.

14 SOLAR ENERGY↗
DOE OSTI2023

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Molybdenum disulfide (MoS 2 ) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>10 10 ), immunity to short-channel effects, and unique switching characteristics. MoS 2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS 2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS 2 using the direct vapor phase sulfurization of MoO 3 . The samples grown on Si/SiO 2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS 2 layers. The MoS 2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS 2 suitable for optoelectronic application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Pulse shape discrimination technique for diffuse supernova neutrino background search with JUNO

Pulse shape discrimination (PSD) is widely used in particle and nuclear physics. Specifically in liquid scintillator detectors, PSD facilitates the classification of different particle types based on their energy deposition patterns. This technique is particularly valuable for studies of the diffuse supernova neutrino background (DSNB), nucleon decay, and dark matter searches. This paper presents a detailed investigation of the PSD technique, applied in the DSNB search performed with the Jiangmen Underground Neutrino Observatory (JUNO). Instead of using conventional cut-and-count methods, we employ methods based on boosted decision trees and neural networks and compare their capability to distinguish the DSNB signals from the atmospheric neutrino neutral-current background events. The two methods demonstrate comparable performance, resulting in a 50–80% improvement in signal efficiency compared to a previous study performed for JUNO (An et al. [JUNO] in J Phys G 43(3):030401, 2016). Moreover, we study the dependence of the PSD performance on the visible energy and final state composition of the events and find a significant dependence on the presence/absence of 11 C. Finally, we evaluate the impact of the detector effects (photon propagation, PMT dark noise, and waveform reconstruction) on the PSD performance.

FOS: Physical sciences↗
DOE OSTI2020

Correlating dynamic microstructure to observed color in electrophoretic displays via in situ small-angle x-ray scattering

Electrophoretic deposition (EPD) is an industrially relevant and scalable technique used to form particle deposits from colloidal suspensions. Highly concentrated particle suspensions generally prevent real-time in situ microscopy observations which limit the characterization of EPD films to ex situ, or postprocessed, laboratory techniques. For dynamic systems, such as tunable amorphous photonic crystals (APCs), only reversible deposits are formed during the EPD process. Since reversible deposits cannot be characterized with standard ex situ methods, the particle-particle and particle-field interactions that govern the displayed color and crystallinity of these systems are not well understood. In this paper, we present in situ small-angle x-ray scattering and UV-Vis techniques for measuring both the structural and optical response of an APC under applied electric fields. Furthermore, we also develop a computational model based on colloidal interactions to explain the observed change in the interparticle spacing of APCs due to the applied electric field which correlates to displayed color. Ultimately, this work provides a new in situ characterization method that could be expanded for other dynamic, tunable colloidal systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach

The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS 2 and WSe 2 ) on Si/SiO 2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process–structure–performance relationships. Finally, this growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.

2D electronics↗