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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Metal–Air Batteries: Will They Be the Future Electrochemical Energy Storage Device of Choice?
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Forty-two days in the SPA, building a stability parameter analyzer to probe degradation mechanisms in perovskite photovoltaic devices
Dunfield et al. discuss various options for satisfying the ISOS light stability series (ISOS-L-#) of tests, a homebuilt testing apparatus and software suite for such tests, and a case study.
Spectral survey of helium lines in a linear plasma device for use in HELIOS imaging
Fast visible cameras and a filterscope are used to examine the visible light emission from Oak Ridge National Laboratory’s Proto-MPEX. The filterscope has been configured to perform helium line ratio measurements using emission lines at 667.9, 728.1, and 706.5 nm. The measured lines should be mathematically inverted and the ratios compared to a collisional radiative model (CRM) to determine T{sub e} and n{sub e}. Increasing the number of measurement chords through the plasma improves the inversion calculation and subsequent T{sub e} and n{sub e} localization. For the filterscope, one spatial chord measurement requires three photomultiplier tubes (PMTs) connected to pellicle beam splitters. Multiple, fast visible cameras with narrowband filters are an alternate technique for performing these measurements with superior spatial resolution. Each camera contains millions of pixels; each pixel is analogous to one filterscope PMT. The data can then be inverted and the ratios compared to the CRM to determine 2-dimensional “images” of T{sub e} and n{sub e} in the plasma. An assessment is made in this paper of the candidate He I emission lines for an imaging technique.
Low-cost and low-topography fabrication of multilayer interconnections for microfluidic devices
Not provided.
Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices
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Resistive Memory Device Requirements for a Neural Algorithm Accelerator.
Abstract not provided.
Wafer-scale TaOx device variability and implications for neuromorphic computing applications.
Abstract not provided.
Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Devices with Heavy Ion and Neutron Irradiation.
Abstract not provided.
Wondering what to blame? Turn PV performance assessments into maintenance action items through the deployment of learning algorithms embedded in a Raspberry Pi device.
Abstract not provided.
IEC 61215 Qualification Tests vs Outdoor Performance using Module Level In Situ I-V Curve Tracing Devices.
Abstract not provided.
Diagnosis of Factors Impacting Yield in Multilayer Devices for Superconducting Electronics
The ability to localize defects in order to understand failure mechanisms in complex superconducting electronics circuits, while operating at low temperature, does not yet exist. Here, this work applies thermally-induced voltage alteration (TIVA), to a biased superconducting electronics (SCE) circuit at ambient temperature. TIVA is a commonly used, laser-based failure analysis technique developed for silicon-based microelectronics. The non-operational circuit consisted of an arithmetic logic unit (ALU) in a high-frequency test bed designed at HYPRES and fabricated by MIT Lincoln Laboratory using their SFQ5ee process. Localized TIVA signals were correlated with reflected light images at the surface, and these sites were further investigated by scanning electron microscopy imaging of focused ion-beam cross-sections. The areas investigated, where prominent TIVA signals were observed, showed seams in the Nb wiring layers at contacts to Josephson junctions or inductors and/or disrupted junction morphologies. Finally, these results suggest that the TIVA technique can be used at ambient temperature to diagnose fabrication defects that may cause low temperature circuit failure.
High Power-Density Photovoltaic Boost Converter and Inverter Using GaN and AlGaN Devices Housed in 3D Printed Packages.
Abstract not provided.
Scanning laser device for low energy characterization of cryogenic devices
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The shielded-cathode mode Gunn device - A proposed new mode of Gunn device operation
Shielded-cathode mode Gunn oscillators to eliminate constraints on operating frequency