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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

Hwang, Helen H.↗
NASA NTRS2003

A Dry-Etch Process for Low Temperature Superconducting Transition Edge Sensors for Far Infrared Bolometer Arrays

The next generation of ultra-low power bolometer arrays, with applications in far infrared imaging, spectroscopy and polarimetry, utilizes a superconducting bilayer as the sensing element to enable SQUID multiplexed readout. Superconducting transition edge sensors (TES s) are being produced with dual metal systems of superconductinghormal bilayers. The transition temperature (Tc) is tuned by altering the relative thickness of the superconductor with respect to the normal layer. We are currently investigating MoAu and MoCu bilayers. We have developed a dry-etching process for MoAu TES s with integrated molybdenum leads, and are working on adapting the process to MoCu. Dry etching has the advantage over wet etching in the MoAu system in that one can achieve a high degree of selectivity, greater than 10, using argon ME, or argon ion milling, for patterning gold on molybdenum. Molybdenum leads are subsequently patterned using fluorine plasma.. The dry-etch technique results in a smooth, featureless TES with sharp sidewalls, no undercutting of the Mo beneath the normal metal, and Mo leads with high critical current. The effects of individual processing parameters on the characteristics of the transition will be reported.

Allen, Christine A.↗
NASA NTRS2011

Cryo-Etched Black Silicon for Use as Optical Black

Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

Yee, Karl Y.↗
DOE OSTI2022

Molecular layer etching

A method of etching an organic or hybrid inorganic/organic material. The method etches molecular layer deposition coatings. An etching cycle comprises a first half reaction exposing the coating to a precursor. A second half reaction exposes a second precursor, removing or etching a portion of the coating.

Young, Matthias John↗
DOE OSTI2020

Sapphire advanced mitigation process: wet etch to expose sub-surface damage and increase laser damage resistance and mechanical strength

In this study, a novel, to the best of our knowledge, method of wet chemical etching of sapphire workpieces (such as optics, wafers, windows, and cones), called the sapphire advanced mitigation process (or sapphire AMP), has been developed that exposes sub-surface mechanical damage created during the optical fabrication process and significantly enhances the surface laser damage resistance (> 2×) and mechanical strength (up to ~ 2.6×). Sapphire AMP involves first treating the workpiece with a mixture of sulfuric and phosphoric acid ([H 2 SO 4 ]:[H 3 PO 4 ]= 1 : 3) at 220°C, followed with phosphoric acid at 160°C, then with sodium hydroxide base (NaOH) and surfactant at 40°C, and finally with a high-pressure deionized water spray rinse. Sapphire AMP has been demonstrated on both A- and C-plane sapphire workpieces. The mechanism of this etch process involves the reaction of the sapphire (Al 2 O 3 ) surface with sulfuric acid (H 2 SO 4 ) forming aluminum sulfate [Al2(SO4)3], which has low solubility. The high phosphoric acid content in the first and second steps of sapphire AMP results in the efficient conversion of Al 2 (SO 4 ) 3 to aluminum phosphate (AlPO 4 ), which is very soluble, greatly reducing reaction product redeposition on the workpiece surface. Sapphire AMP is shown to expose sub-surface mechanical damage on the sapphire surface created during the grinding and polishing processes, whose etched morphology has either isotropic or anisotropic evolution depending on the nature of the initial surface damage. Sapphire AMP was also designed to remove the key known surface, laser absorbing precursors (namely, foreign chemical impurities, the fracture surface layer of preexisting sub-surface damage, and reaction product or foreign species redeposition or precipitation). Static and sliding indention induced surface microfractures on sapphire are shown after sapphire AMP to have a significant decrease in the fast photoluminescence intensity (a known metric for measuring the degree of laser damaging absorbing precursors). In addition, the onset of laser damage (at 351 nm 3 ns) on sapphire AMP treated workpieces was shown to increase in fluence from ~ 4 to >9.5J/cm 2 . Finally, biaxial ball-on-ring mechanical tests on sapphire disks showed an increase in the failure stress from 340 MPa (with pre-existing 28 µm flaws) to ~ 900MPa after sapphire AMP, which is attributed to the blunting of the surface microfractures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Fabrication of Silicon Nanowire Forests for Thermoelectric Applications by Metal-Assisted Chemical Etching

Silicon nanowires, whose thermal conductivity is strongly reduced with respect to that of the bulk silicon, are very promising for high-efficient thermoelectric conversion. This work focuses on the development of a technique for the fabrication of thermoelectric generators which are based on vertical silicon nanowire forests, achieved through a metal-assisted chemical etch. As heavily doped nanowires are essential in thermoelectric applications, this chemical process has been applied both on lightly and on highly doped (> 10{sup 19} cm{sup −3}) silicon substrates. A comparison of the results shows that the etch behaves in a completely distinct way when applied to the differently doped substrates. The results of this comparison and a preliminary insight into the diverse behavior occurred are reported. The different initial nucleation of silver, which determines the hole injection, essential to the etching of silicon, seems to be the key point of this different behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tribological Behavior of Electrochemically Etched AISI 316 Stainless Steel with a Textured Surface

In this work, AISI 316 stainless steel (316 SS) was electrochemically etched in four NaCl solutions (10, 15, 20, and 25 wt.%) to form textured surfaces. Surface morphologies, three-dimensional surface topographies, and surface profiles of the textured 316 SS samples were obtained by scanning electron microscopy (SEM) and laser scanning confocal microscope (LSCM). Sliding friction tests of the textured 316 SS samples were conducted in air and under grease lubrication. The results suggested that the variable degrees of microtextured surfaces after electrochemical etching in 10, 15, and 20 wt.% NaCl solutions. The 316 SS samples etched in 15 and 20 wt.% NaCl solutions showed more promising tribological performance than other samples, as reflected by their friction coefficients, mass loss per unit distance traveled (mg/m), and wear morphologies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Plasma-Induced Tailoring of Graphene Oxide Surfaces for Electrochemical Applications: Functionalization and Etching

This study investigates the use of radio frequency air plasma as an eco-friendly method to rapidly and reversibly tailor the surface properties of graphene oxide (GO) films. We observed a transition from hydrophilic (contact angle ∼55°) to superhydrophilic (<10°) with short plasma exposure, attributed to a synergistic combination of surface modification and etching. Spectroscopic analyses (FTIR, XPS) revealed early stage formation of carbonyl groups and reduction of hydroxyls, while longer treatments induced atomic-level etching (AFM) and structural changes (XRD). This surface engineering enhanced the dielectric properties of GO films but led to reduced aqueous stability. The elucidated interplay between plasma-induced functionalization and etching provides valuable insights for the controlled modification of GO surfaces for various applications, including advanced dielectrics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of low fundamental frequency biases

The use of non-sinusoidal waveforms in low pressure capacitively coupled plasmas intended for microelectronics fabrication has the goal of customizing ion and electron energy and angular distributions to the wafer. One such non-sinusoidal waveform uses the sum of consecutive harmonics of a fundamental sinusoidal frequency, f 0 , having a variable phase offset between the fundamental and even harmonics. In this paper, we discuss results from a computational investigation of the relation between ion energy and DC self-bias when varying the fundamental frequency f 0 for capacitively coupled plasmas sustained in Ar/CF 4 /O 2 and how those trends translate to a high aspect ratio etching of trenches in SiO 2 . The fundamental frequency, f 0 , was varied from 1 to 10 MHz and the relative phase from 0° to 180°. Two distinct regimes were identified. Average ion energy onto the wafer is strongly correlated with the DC self-bias at high f 0 , with there being a maximum at φ = 0° and minimum at φ = 180°. In the low frequency regime, this correlation is weak. Average ion energy onto the wafer is instead dominated by dynamic transients in the applied voltage waveforms, with a maximum at φ = 180° and minimum at φ = 0°. The trends in ion energy translate to etch properties. In both, the high and low frequency regimes, higher ion energies translate to higher etch rates and generally preferable final features, though behaving differently with phase angle.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Atomic scale etching of diamond: insights from molecular dynamics simulations

Diamond is a promising material for multiple applications in quantum information processing and sensing as well as applications in microelectronics. However, diamond devices can be limited by surface defects that compromise charge stability and spin coherence, among others. Improved strategies in plasma etching of diamond could play an important role in minimizing or eliminating these defects. In this work, we explore plasma-assisted atomic scale etching of diamond using argon ions (Ar + ), hydrogen ions (H + ) and hydrogen atoms (H). We employ classical molecular dynamics (MD) simulations and test several interatomic potentials based on the Reactive Empirical Bond Order (REBO) form with comparisons to a variety of published experimental results. We performed MD simulations of low-energy hydrogen ($\leqslant$50 eV) and argon ( $\leqslant$200 eV) ion bombardment of diamond surfaces. Ar + bombardment can be used to locally smooth initially rough diamond surfaces via the formation of an amorphous C layer, the thickness of which increases with argon ion energy. Subsequent exposure with hydrogen ions (or fast neutrals) will selectively etch this amorphous C layer, leaving the underlying diamond layer mostly intact if the H energy is maintained below about 10 eV. The simulations suggest that combining Ar + smoothing with selective, near threshold energy H removal of amorphous C can be an effective strategy for diamond surface engineering, leading to more reliable and sensitive diamond color center devices.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Direct matter disassembly via electron beam control: electron-beam-mediated catalytic etching of graphene by nanoparticles

Here, we report electron-beam activated motion of a catalytic nanoparticle along a graphene step edge and associated etching of the edge. The catalytic hydrogenation process was observed to be activated by a combination of elevated temperature and electron beam irradiation. Reduction of beam fluence on the particle was sufficient to stop the process, leading to the ability to switch on and off the etching. Such an approach enables the targeting of individual nanoparticles to induce motion and beam-controlled etching of matter through activated electrocatalytic processes. The applications of electron-beam control as a paradigm for molecular-scale robotics are discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV Voc Si Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the loss analysis of silicon solar cells with polysilicon on locally-etched dielectric passivating contacts with Voc=729.0 mV and efficiency=22.6% has been presented. Experimentally, nano-pinholes were introduced in SiO x (2.2 nm) and SiO x /SiN y (2.2 nm/8nm) stack using metal-assisted chemical etching (MACE). SunSolve and Quokka3 were used to simulate the experimental solar cell and investigate the optical and electrical power losses. Simulations suggest maximum power loss occurs due to recombination and resistive losses in the bulk (~0.76 mW/cm2) followed by power loss due to rear contact recombination (~0.35 mW/cm2). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and hence, efficiency has been investigated. Further, advanced structures have been proposed to minimize recombination and parasitic absorption to achieve higher Voc and Jsc of the solar cells with locally-etched dielectric passivating contacts.

contacts↗
DOE OSTI2020

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies. The plasma etching conditions used are generally ion-assisted because of the strong bond strengths in these materials, and this creates challenges for the choice of masks in order to have sufficient selectivity over the semiconductor and to avoid mask erosion and micromasking issues. It can also be challenging to achieve practical etch rates without creating excessive damage in the patterned surface. The authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.

42 ENGINEERING↗
DOE OSTI2022

Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms

Here, a modified classical molecular dynamics (MD) force field is presented for the interaction between silicon (Si) and chlorine (Cl). The original version of the force field is shown to significantly overestimate the probability of Si etching by thermal Cl atoms. However, the modified force field corrects this problem and results in generally good agreement with experimental data. Further, it is shown that while the modification of the force field improves the prediction of Si spontaneous etching with Cl atoms, it does not degrade predictions of atomic-layer etching of Si with Cl[Formula: see text] molecules.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

In this paper, we discuss causes of the multidirectional effect of changes in the concentrations of free charge carriers in silicon crystals of p- and n-type conductivity on the transverse dimensions of pores formed as a result of anodic etching in hydrofluoric acid solutions, as well as the effect of anodic current density on pore size. The observed dependences are explained based on the concepts of electrochemical pore formation in semiconductor crystals as self-organizing cooperative processes accompanied by the injection of electrons from the chemical reaction region at the pore advancement front. Differences in the size of pores forming at the same current density in crystals differing in type and concentration of free charge carriers are associated with the effective temperature of the front of the cooperative chemical reaction at the bottom of germinating pores. This temperature, in turn, correlates with the power density of thermal energy released in the near-surface region of the etching crystal, either due to recombination processes for a p-type semiconductor or direct or indirect energy transfer from hot electrons to lattice vibrations in the case of a n-type semiconductor. The characteristic relaxation times of injected nonequilibrium electrons were calculated depending on the concentrations of the majority charge carriers in silicon crystals of both types of conductivity and the corresponding thicknesses of the regions of relaxation energy release. The revealed patterns of concentration changes in the power density of heat release in the near-frontal region of etching silicon crystals of p- and n-type conductivity are in good agreement with observed changes in the size of germinating pores.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Proof-of-concept for polysilicon on locally etched oxide (PLEO) contacts. Room temperature approach (via MACE) to engineer pinholes decouples charge-carrier transport across contact from passivation scheme of choice. 19 and 17% PLEO devices fabricated on double-side textured and saw-damage etched n Cz wafers, respectively. Preliminary work on polysilicon on locally etched nitride/oxide (PLENO) contacts. 0.2 fA/cm2 achieved with p PLENO; contact displays Ohmic behavior but still very resistive due to low pinhole density.

c-Si↗
DOE OSTI2019

Two-step synthesis of few layer graphene using plasma etching and atmospheric pressure rapid thermal annealing

A two-step process using halogen based plasma etching combined with atmospheric pressure rapid thermal annealing has been used to synthesize few layer graphene films on 6H-SiC (0001) surfaces. In this process, the 6H-SiC substrates were etched under different plasma conditions to produce a carbon rich surface layer. This was followed by rapid thermal annealing in a flow of atmospheric pressure Ar to produce the graphene films. The effects of different etching conditions, heating rates, and average and maximum annealing temperatures were investigated. Changes in surface and near-surface composition after each step were characterized by x-ray photoelectron spectroscopy and overall film quality was assessed using Raman spectroscopy. Film defects associated with this synthesis method included a buffer layer between the SiC substrate and graphene as well as oxygen-based defects on the graphene surface. Electrical characterization of these films was performed using both two and four point methods. In the two point measurements, these films exhibited back-to-back Schottky behavior from which the Schottky barrier height, carrier density and mobility were determined. The four point measurements were used to determine the contact and film resistivity as well as the transfer length.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Enhancing the tensile properties of EBM as-built thin parts: Effect of HIP and chemical etching

Highlights: • The EBM process leads to important cross section variations in thin parts. • Stress calculation must be based on the average section in order to be relevant. • As-built state has a detrimental effect on every mechanical property. • Mechanical properties of machined samples are met with chemical etching. • HIP has a beneficial effect on the ductility. - Abstract: As-built Ti-6Al-4 V thin parts were manufactured using Electron Beam Melting (EBM) and characterized by optical microscopy and laboratory X-ray tomography in order to observe their microstructure, pore distribution and surface aspect. Chemical etching and HIP post-treatments were applied to as-built samples and their effect on the material and static mechanical properties were studied. Tensile tests were performed on both as-built and post-treated samples and their results compared to the ones reported in the literature for machined EBM samples. Because of the significant variations of the cross section observed along the gauge length, the calculation of the tensile stresses is not straightforward. Three simple sections were measured from the tomography scans. The average section along the gauge length was considered as the most suitable. The tensile mechanical properties of the as-built samples were studied and a detrimental effect of the surface state on the yield strength, ultimate tensile strength and elongation to failure was observed. Smoothing of the surface irregularities induced by chemical etching provoked an increase of those mechanical properties whereas the change of the microstructure generated by the HIP treatment leads to a decrease of the material strength that goes along with an increase of the ductility. Down scaling factors were proposed in order to take into account the sample state, as-built or post-treated.

36 MATERIALS SCIENCE↗