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Results for “high voltage breakdown”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Characterization of polybenzimidazole (PBI) film at high temperatures

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Hammoud, Ahmad N.↗
NASA NTRS2006

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗
NASA NTRS2007

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗
NASA NTRS2011

Dust Removal Technolgy for a Mars In Situ Resource Utilization System

Several In Situ Resource Utilization (lSRU) systems being considered to enable future manned exploration of Mars require capture of Martian atmospheric gas to extract oxygen and other commodities. However, the Martian atmosphere contains relatively large amounts of dust which must be removed in tbe collection systems of the ISRU chambers. The amount of atmospheric dust varies largely with the presence of daily dust devils and the less frequent but much more powerful global dust storms. A common and mature dust removal technology for terrestrial systems is the electrostatic precipitator. With this technology, dust particles being captured are imparted an electrostatic charge by means of a corona discharge. Charged dust particles are then driven to a region of high electric field which forces the particles onto a collector for capture. Several difficulties appear when this technology is adapted to the Martian atmospheric environment At the low atmospheric pressure of Mars, electrical breakdown occurs at much lower voltages than on Earth and corona discharge is difficult to sustain. In this paper, we report on our efforts to obtain a steady corona/glow discharge in a simulated Martian atmosphere of carbon dioxide at 9 millibars of pressure. We also present results on the design of a dust capture system under these atmospheric conditions.

Calle, C. I.↗
NASA NTRS1994

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Tabory, Charles N.↗
NASA NTRS1961

Magnetic Ignition of Pulsed Gas Discharges in Air of Low Pressure in a Coaxial Plasma Gun

The effect of an axial magnetic field on the breakdown voltage of a coaxial system of electrodes has been investigated by earlier workers. For low values of gas pressure times electrode spacing, the breakdown voltage is decreased by the application of the magnetic field. The electron cyclotron radius now assumes the role held by the mean free path in nonmagnetic discharges and the breakdown voltage becomes a function of the magnetic flux density. In this paper the dependence of the formative time lag as a function of the magnetic flux density is established and the feasibility of using a magnetic field for igniting high-voltage, high-current discharges is shown through theory and experiment. With a 36 microfarad capacitor bank charged to 48,000 volts, a peak current of 1.3 x 10( exp 6) amperes in a coaxial type of plasma gun was achieved with a current rise time of only 2 microseconds.

Thom, Karlheinz↗
NASA NTRS1989

High density associative memory

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

Moopenn, Alexander W.↗
NASA NTRS1988

High voltage gas isolator

An isolator is provided which has an inlet at ground electrical potential which receives gas, and which has an outlet at a high electrical potential through which gas is discharged, the isolator being compactly and simply constructed while providing a long narrow path that minimizes the possibility of electrical breakdown through the gas. The isolator includes a first element forming a cylindrical core and a cup-shaped second element forming a sleeve portion that closely receives the core. The core has a helical groove on its outside to form a passage between the groove and the inner walls of the sleeve. The core also has a vertical hole extending to the bottom of the core and a radial groove in the bottom of the core that extends between the hole and the bottom of the helical groove.

Brophy, John R.↗
NASA NTRS1972

Development of high temperature gallium phosphide rectifiers

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

Craford, M. G.↗
NASA NTRS1981

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

Berning, D.↗
NASA NTRS1981

Direct current ballast circuit for metal halide lamp

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

Lutus, P.↗
NASA NTRS1984

Predicting electrochemical breakdown in terrestrial photovoltaic modules

Electrochemical corrosion of PV cells can cause a cell-to-frame short circuit with two undesirable resuits: (1) catastrophic loss of source-circuit power; and (2) high field maintenance (module replacement) costs. Parameter dependencies are determined and encapsulated two-cell coupons are exposed to a range of voltage differences, temperatures, and relative humidities. Material relative performance is assessed. Nine different metallization-encapsulation combinations are tested.

Mon, G. R.↗
NASA NTRS1994

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Hunt, W. D.↗
NASA NTRS2011

Development of an Electrostatic Precipitator to Remove Martian Atmospheric Dust from ISRU Gas Intakes During Planetary Exploration Missions

Manned exploration missions to Mars will need dependable in situ resource utilization (ISRU) for the production of oxygen and other commodities. One of these resources is the Martian atmosphere itself, which is composed of carbon dioxide (95.3%), nitrogen (2.7%), argon (1.6%), oxygen (0.13%), carbon monoxide (0.07%), and water vapor (0.03%), as well as other trace gases. However, the Martian atmosphere also contains relatively large amounts of dust, uploaded by frequent dust devils and high Winds. To make this gas usable for oxygen extraction in specialized chambers requires the removal of most of the dust. An electrostatic precipitator (ESP) system is an obvious choice. But with an atmospheric pressure just one-hundredth of Earth's, electrical breakdown at low voltages makes the implementation of the electrostatic precipitator technology very challenging. Ion mobility, drag forces, dust particle charging, and migration velocity are also affected because the low gas pressure results in molecular mean free paths that are approximately one hundred times longer than those at Earth .atmospheric pressure. We report here on our efforts to develop this technology at the Kennedy Space Center, using gases with approximately the same composition as the Martian atmosphere in a vacuum chamber at 9 mbars, the atmospheric pressure on Mars. We also present I-V curves and large particle charging data for various versions of wire-cylinder and rod-cylinder geometry ESPs. Preliminary results suggest that use of an ESP for dust collection on Mars may be feasible, but further testing with Martian dust simulant is required.

Clements, J. Sidney↗
NASA NTRS1984

Galactic heavy-ion shielding using electrostatic fields

The shielding of spacecraft against galactic heavy ions, particularly high-energy Fe(56) nuclei, by electrostatic fields is analyzed for an arrangement of spherical concentric shells. Vacuum breakdown considerations are found to limit the minimum radii of the spheres to over 100 m. This limitation makes it impractical to use the fields for shielding small spacecraft. The voltages necessary to repel these Fe(56) nuclei exceed present electrostatic generating capabilities by over 2 orders of magnitude and render the concept useless as an alternative to traditional bulk-material shielding methods.

Townsend, L. W.↗
NASA NTRS1982

High-voltage spark atomic emission detector for gas chromatography

A dc-powered, double-gap, miniature nanosecond spark source for emission spectrochemical analysis of gas chromatographic effluents is described. The spark is formed between two thoriated tungsten electrodes by the discharge of a coaxial capacitor. The spark detector is coupled to the gas chromatograph by a heated transfer line. The gas chromatographic effluent is introduced into the heated spark chamber where atomization and excitation of the effluent occurs upon breakdown of the analytical gap. A microcomputer-controlled data acquisition system allows the implementation of time-resolution techniques to distinguish between the analyte emission and the background continuum produced by the spark discharge. Multiple sparks are computer averaged to improve the signal-to-noise ratio. The application of the spark detector for element-selective detection of metals and nonmetals is reported.

Calkin, C. L.↗
NASA NTRS2010

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Aslam, Shahid↗