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At least 163 records · Page 9

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NASA NTRS1995

Micro-Electromechanical Instrument and Systems Development at the Charles Stark Draper Laboratory

Several generations of micromechanical gyros and accelerometers have been developed at Draper. Current design effort centers on tuning-fork gyro design and pendulous accelerometer configurations. Over 200 gyros of different generations have been packaged and tested. These units have successfully performed across a temperature range of -40 to 85 degrees C, and have survived 30,000-g shock tests along all axes. Draper is currently under contract to develop an integrated micro-mechanical inertial sensor assembly (MMISA) and global positioning system (GPS) receiver configuration. The ultimate projections for size, weight, and power for an MMISA, after electronic design of the application specific integrated circuit (ASIC ) is completed, are 2 x 2 x 0.5 cm, 5 gm, and less than 1 W, respectively. This paper describes the fabrication process, the current gyro and accelerometer designs, and system configurations.

Connelly, J. H.↗

NASA NTRS2007

Improved On-Chip Measurement of Delay in an FPGA or ASIC

An improved design has been devised for on-chip-circuitry for measuring the delay through a chain of combinational logic elements in a field-programmable gate array (FPGA) or application-specific integrated circuit (ASIC). In the improved design, the delay chain does not include input and output buffers and is not configured as an oscillator. Instead, the delay chain is made part of the signal chain of an on-chip pulse generator. The duration of the pulse is measured on-chip and taken to equal the delay.

Chen, Yuan↗

NASA NTRS2003

An Integrated Magnetic Circuit Model and Finite Element Model Approach to Magnetic Bearing Design

A code for designing magnetic bearings is described. The code generates curves from magnetic circuit equations relating important bearing performance parameters. Bearing parameters selected from the curves by a designer to meet the requirements of a particular application are input directly by the code into a three-dimensional finite element analysis preprocessor. This means that a three-dimensional computer model of the bearing being developed is immediately available for viewing. The finite element model solution can be used to show areas of magnetic saturation and make more accurate predictions of the bearing load capacity, current stiffness, position stiffness, and inductance than the magnetic circuit equations did at the start of the design process. In summary, the code combines one-dimensional and three-dimensional modeling methods for designing magnetic bearings.

Provenza, Andrew J.↗

NASA NTRS1998

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Pinsukanjana, Paul R.↗

NASA NTRS1976

Design, processing, and testing of LSI arrays for space station

The applicability of a particular process for the fabrication of large scale integrated circuits is described. Test arrays were designed, built, and tested, and then utilized. A set of optimum dimensions for LSI arrays was generated. The arrays were applied to yield improvement through process innovation, and additional applications were suggested in the areas of yield prediction, yield modeling, and process reliability.

Ipri, A. C.↗

NASA NTRS1987

System architecture of a gallium arsenide one-gigahertz digital IC tester

The design for a 1-GHz digital integrated circuit tester for the evaluation of custom GaAs chips and subsystems is discussed. Technology-related problems affecting the design of a GaAs computer are discussed, with emphasis on the problems introduced by long printed-circuit-board interconnect. High-speed interface modules provide a link between the low-speed microprocessor and the chip under test. Memory-multiplexer and memory-shift register architectures for the storage of test vectors are described in addition to an architecture for local data storage consisting of a long chain of GaAs shift registers. The tester is constructed around a VME system card cage and backplane, and very little high-speed interconnect exists between boards. The tester has a three part self-test consisting of a CPU board confidence test, a main memory confidence test, and a high-speed interface module functional test.

Fouts, Douglas J.↗

NASA NTRS2007

Advanced High-Definition Video Cameras

A product line of high-definition color video cameras, now under development, offers a superior combination of desirable characteristics, including high frame rates, high resolutions, low power consumption, and compactness. Several of the cameras feature a 3,840 2,160-pixel format with progressive scanning at 30 frames per second. The power consumption of one of these cameras is about 25 W. The size of the camera, excluding the lens assembly, is 2 by 5 by 7 in. (about 5.1 by 12.7 by 17.8 cm). The aforementioned desirable characteristics are attained at relatively low cost, largely by utilizing digital processing in advanced field-programmable gate arrays (FPGAs) to perform all of the many functions (for example, color balance and contrast adjustments) of a professional color video camera. The processing is programmed in VHDL so that application-specific integrated circuits (ASICs) can be fabricated directly from the program. ["VHDL" signifies VHSIC Hardware Description Language C, a computing language used by the United States Department of Defense for describing, designing, and simulating very-high-speed integrated circuits (VHSICs).] The image-sensor and FPGA clock frequencies in these cameras have generally been much higher than those used in video cameras designed and manufactured elsewhere. Frequently, the outputs of these cameras are converted to other video-camera formats by use of pre- and post-filters.

Glenn, William↗

NASA NTRS1987

Interchange of electronic design through VHDL and EIS

The need for both robust and unambiguous electronic designs is a direct requirement of the astonishing growth in design and manufacturing capability during recent years. In order to manage the plethora of designs, and have the design data both interchangeable and interoperable, the Very High Speed Integrated Circuits (VHSIC) program is developing two major standards for the electronic design community. The VHSIC Hardware Description Language (VHDL) is designed to be the lingua franca for transmission of design data between designers and their environments. The Engineering Information System (EIS) is designed to ease the integration of data betweeen diverse design automation systems. This paper describes the rationale for the necessity for these two standards and how they provide a synergistic expressive capability across the macrocosm of design environments.

Wallace, Richard M.↗

NASA NTRS1988

Integrated circuit reliability testing

A technique is described for use in determining the reliability of microscopic conductors deposited on an uneven surface of an integrated circuit device. A wafer containing integrated circuit chips is formed with a test area having regions of different heights. At the time the conductors are formed on the chip areas of the wafer, an elongated serpentine assay conductor is deposited on the test area so the assay conductor extends over multiple steps between regions of different heights. Also, a first test conductor is deposited in the test area upon a uniform region of first height, and a second test conductor is deposited in the test area upon a uniform region of second height. The occurrence of high resistances at the steps between regions of different height is indicated by deriving the measured length of the serpentine conductor using the resistance measured between the ends of the serpentine conductor, and comparing that to the design length of the serpentine conductor. The percentage by which the measured length exceeds the design length, at which the integrated circuit will be discarded, depends on the required reliability of the integrated circuit.

Buehler, Martin G.↗

NASA NTRS1990

Integrated circuit reliability testing

Buehler, Martin G.↗

NASA NTRS1989

Asymmetrical SRAM Cells For Radiation Tests

Features of circuits altered to increase or decrease sensitivity to radiation. State-space analysis used to analyze single-event-upset behavior of memory cell. When voltage on node a is set at one of indicated initial values Vao and then released, voltages on nodes a and b then follow indicated trajectory to final logic "one" or logic "zero" state. Ability to do this important for design of radiation-detecting integrated circuits (deliberately made more sensitive to ionizing radiation) and "radiation-hardened" integrated circuits - those intended to be relatively invulnerable to intense radiation.

Buehler, Martin G.↗

NASA NTRS1989

External electro-optic probing of millimeter-wave integrated circuits

An external, noncontact electro-optic measurement system, designed to operate at the wafer level with conventional wafer probing equipment and without any special circuit preparation, has been developed. Measurements have demonstrated the system's ability to probe continuous and pulsed signals on microwave integrated circuits on arbitrary substrates with excellent spatial resolution. Experimental measurements on a variety of digital and analog circuits, including a GaAs selectively-doped heterostructure transistor prescaler, an NMOS silicon multiplexer, and a GaAs power amplifier MMIC are reported.

Whitaker, J. F.↗

NASA NTRS1989

External electro-optic probing of millimeter-wave integrated circuits

Whitaker, J. F.↗

NASA NTRS2010

Advances in HgCdTe APDs and LADAR Receivers

Raytheon is developing NIR sensor chip assemblies (SCAs) for scanning and staring 3D LADAR systems. High sensitivity is obtained by integrating high performance detectors with gain i.e. APDs with very low noise Readout Integrated Circuits. Unique aspects of these designs include: independent acquisition (non-gated) of pulse returns, multiple pulse returns with both time and intensity reported to enable full 3D reconstruction of the image. Recent breakthrough in device design has resulted in HgCdTe APDs operating at 300K with essentially no excess noise to gains in excess of 100, low NEP <1nW and GHz bandwidths and have demonstrated linear mode photon counting. SCAs utilizing these high performance APDs have been integrated and demonstrated excellent spatial and range resolution enabling detailed 3D imagery both at short range and long ranges. In this presentation we will review progress in high resolution scanning, staring and ultra-high sensitivity photon counting LADAR sensors.

Bailey, Steven↗

NASA NTRSDate not supplied

Multi-Gbps Fiber-Optic Wavefront Sensing Coherent Optical Receiver

We report recent progress on technology developments at the NASA Glenn Research Center using photonic lanterns for coherent optical communications applications. In particular, the development of a spatial mode-diversity optical receiver using a photonic lantern combined with a photonic integrated circuit (PIC). The PIC is designed for compatibility with the NASA Laser Communication Relay Demonstration’s (LCRD) differential phase-shift keying signaling format. We report on the PIC design and future characterization and packaging efforts. Additionally, we report on the development of a 19-channel photonic lantern and provide updates on efforts to use the photonic lantern as a wavefront sensing device. The photonic lantern insertion loss, and spatial-mode transfer characteristics are detailed, as well as the development of a predictive framework in which the intensities in the 19 single-mode output channels are used to reconstruct the wavefront of the light entering the multi-moded input side of the lantern. Finally, we discuss concepts for potential future systems using photonic lanterns and PICs that combine both wavefront sensing and coherent communications onto a single integrated platform.

Optical Communications↗

NASA NTRS1989

Universal test fixture for monolithic mm-wave integrated circuits calibrated with an augmented TRD algorithm

The design and evaluation of a novel fixturing technique for characterizing millimeter wave solid state devices is presented. The technique utilizes a cosine-tapered ridge guide fixture and a one-tier de-embedding procedure to produce accurate and repeatable device level data. Advanced features of this technique include nondestructive testing, full waveguide bandwidth operation, universality of application, and rapid, yet repeatable, chip-level characterization. In addition, only one set of calibration standards is required regardless of the device geometry.

Romanofsky, Robert R.↗

NASA NTRS2018

Yearlong 500 °C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated Circuits

This work describes recent progress in the design, processing, upscaling, and testing of 500°C durable two-level interconnect 4H-SiC JFET IC technology undergoing development at NASA Glenn Research Center. For the first time, stable electrical operation of semiconductor ICs for 1 year (8760 hours) at 500°C in air atmosphere is reported. These groundbreaking durability results were attained on two-level interconnect JFET demonstration ICs with 175 or more transistors on each chip. This corresponds to a more than 7-fold increase in 500°C-durable circuit complexity from the 24 transistor ring oscillator ICs reported at HiTEC 2016.

Neudeck, Philip G.↗

NASA NTRSDate not supplied

Signal and Power Integrity Design Methodology for High-Performance Flight Computing Systems

Computing capabilities of space systems have in-creased onboard performance by orders of magnitude with the use of radiation-tolerant field-programmable gate arrays (FPGA)and processors. The incorporation of signal and power integrity analysis with printed circuit board (PCB) design in reliable computing architectures for space systems has become critical to enable future mission capabilities. Developers launch high-performance processors into a breadth of orbits and missions, running varying applications that create challenges for designing reliable computing hardware. Specifically, for these designs, academic and industry research has focused on component radiation performance, fault mitigation, and reliable architectures. How-ever, other design parameters including electromagnetic interference (EMI), PCB stackup, signal integrity (SI), voltage regulator module (VRM) design, and power distribution network (PDN)are often deprioritized or disregarded as the design matures. Since these characteristics are becoming more significant in high-performance processor designs, this research presents a hardware design and analysis methodology for high-performance, space-computing systems that focuses on a holistic design approach and PDN reliability. While these challenges exist across all space hardware, the reduced PCB dimensions imposed by SmallSats and CubeSats introduce additional hurdles, specifically to VRM and decoupling design. By examining the relationship between the PDN and radiation performance, an analytical relationship is developed that incorporates Total Ionizing Dose and Single-Event Transients to ensure reliability throughout the mission duration. The presented design methodology is applied to the SpaceCube v3.0 Mini, an FPGA-based on-board science data processing system developed at NASA Goddard Space Flight Center.

Advanced avionics↗