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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Miniaturized integrated spectrometer using a silicon ring-grating design

We introduce and experimentally demonstrate a miniaturized integrated spectrometer operating over a broad bandwidth in the short-wavelength infrared (SWIR) spectrum that combines an add-drop ring resonator narrow band filter with a distributed Bragg reflector (DBR) based broadband filter realized in a silicon photonic platform. The contra-directional coupling DBR filter in this design consists of a pair of waveguide sidewall gratings that act as a broadband filter (i.e., 3.9 nm). The re-directed beam is then fed into the ring resonator which functions as a narrowband filter (i.e., 0.121 nm). In this scheme the free spectral range (FSR) limitation of the ring resonator is overcome by using the DBR as a filter to isolate a single ring resonance line. The overall design of the spectrometer is further simplified by simultaneously tuning both components through the thermo-optic effect. Moreover, several ring-grating spectrometer cells with different central wavelengths can be stacked in cascade in order to cover a broader spectrum bandwidth. This can be done by centering each unit cell on a different center wavelength such that the maximum range of one-unit cell corresponds to the minimum range of the next unit cell. This configuration enables high spectral resolution over a large spectral bandwidth and high extinction ratio (ER), making it suitable for a wide variety of applications.

42 ENGINEERING↗
DOE OSTI2026

Slow-Light Mid-IR Silicon Photonic Chips for NO 2 and CH 4 Gas Detection

A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.

Crystals↗
DOE OSTI2023

Improved fabrication of scalable hybrid silicon nitride–thin-film lithium niobate electro-optic modulators

Strategies for improved fabrication of integrated thin-film lithium niobate electro-optic (EO) Mach–Zehnder modulators (MZMs) are reported using scalable processes and designs. The MZM devices utilize direct bonding of unetched and unpatterned thin-film lithium niobate to patterned and planarized silicon photonic microchips. The latter contains silicon nitride waveguide structures of various widths that are used to form hybrid modes that are suitable for high-bandwidth low-voltage EO modulators based on Pockels effect. We report that the incorporation of appropriately designed outgassing channels and certain modifications to key processing steps helped achieve a greater than 99% reduction in void density during bonding. Void reduction is critically important for these traveling-wave hybrid MZM devices in which the optical mode is controllably distributed between multiple thin layers and propagates over millimeter-scale lengths.

Mere, Viphretuo↗
DOE OSTI2025

An integrated photonic engine for programmable atomic control

Abstract Solutions for scalable, high-performance optical control are important for the development of scaled atom-based quantum technologies. Modulation of many individual optical beams is central to applying arbitrary gate and control sequences on arrays of atoms or atom-like systems. At telecom wavelengths, miniaturization of optical components via photonic integration has pushed the scale and performance of classical and quantum optics far beyond the limitations of bulk devices. However, material platforms for high-speed telecom integrated photonics lack transparency at the short wavelengths required by leading atomic systems. Here, we propose and implement a scalable and reconfigurable photonic control architecture using integrated, visible-light modulators based on thin-film lithium niobate. We combine this system with techniques in free-space optics and holography to demonstrate multi-channel, gigahertz-rate visible beamshaping. When applied to silicon-vacancy artificial atoms, our system enables the spatial and spectral addressing of a dynamically-selectable set of these stochastically-positioned point emitters.

Science & Technology - Other Topics↗
DOE OSTI2025

Sub-2 Kelvin Characterization of Nitrogen-Vacancy Centers in Silicon Carbide Nanopillars

The development of efficient quantum communication technologies depends on the innovation in multiple layers of its implementation, a challenge we address from the fundamental properties of the physical system at the nanoscale to the instrumentation level at the macroscale. We select a promising near-infrared quantum emitter, the nitrogen-vacancy (NV) center in 4H-SiC, and integrate it, at an ensemble level, with nanopillar structures that enhance photon collection efficiency into an objective lens. Moreover, changes in collection efficiency in pillars compared to bulk can serve as indicators of color center orientation in the lattice. To characterize NV center properties at the unprecedented sub-2 K temperatures, we incorporate compatible superconducting nanowire single photon detectors inside the chamber of an optical cryostat and create the ICECAP, the Integrated Cryogenic system for Emission, Collection And Photon detection. ICECAP measurements show no significant line-width broadening of NV ensemble emission and up to 14-fold enhancement in collected emission. With additional filtering, we measure emitter lifetimes of NV centers in a basal ( hk ) and axial ( kk ) orientation, unveiling their cryogenic values of 2.2 and 2.8 ns.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

High-bandwidth density silicon photonic resonators for energy-efficient optical interconnects

The growth of artificial intelligence applications demands ever larger and more complex deep learning models, dominating today's—and tomorrow's—data center and high-performance computing systems. While traditional electronics are failing to keep pace with application demands, silicon photonic (SiPh) interconnects have emerged as a necessary technology to support these systems. SiPh-driven wavelength-division multiplexing (WDM) offers a particularly promising path toward supporting incredibly high-aggregate link bandwidth in a compact and efficient form factor. One of the basic building blocks of these integrated WDM interconnects is the SiPh resonator. Their inherent wavelength selectivity and compact footprint allow for efficient data transmission multiplexed across dozens of carrier wavelengths. Used as add-drop (AD) filters, SiPh resonators are critical to constructing integrated tunable wavelength-selective optical circuit switches as well as for demultiplexing the different carrier wavelengths toward independent wavelength-insensitive photodiodes in a dense wavelength-division multiplexing receiver. Resonators in the all-pass (AP) configuration are widespread as well, allowing for wavelength-selective modulation to drive aggregate link bandwidths far beyond the individual channel data rate. Unlike SiPh Mach–Zehnder modulators (MZM), resonant modulators can be driven using low, complementary metal-oxide-semiconductor drive voltages, allowing for tight co-integration between photonic integrated circuits, fabricated with larger process node technologies, and electronic integrated circuits, designed to exploit the advantages of the latest node. To push toward practical peta-scale interconnects, a comprehensive review of SiPh resonators is required, addressing bottlenecks and design constraints at both the architecture and device levels. We first describe the predominant integrated link architectures and identify their limits. We then discuss the device-level design considerations that can be made for both AD and AP configuration resonators to overcome the system level limits with novel resonator device designs. Analytical models and numerical simulation of resonators are validated by experimental measurement of devices fabricated in a commercial 300-mm foundry, showing a clear path toward volume manufacturing. The demonstrated resonant modulators and filters support the feasibility of increasing the aggregate bandwidth of resonator-driven SiPh interconnects into the peta-scale regime.

42 ENGINEERING↗
DOE OSTI2022

Front-End Design for SiPM-Based Monolithic Neutron Double Scatter Imagers

Neutron double scatter imaging exploits the kinematics of neutron elastic scattering to enable emission imaging of neutron sources. Due to the relatively low coincidence detection efficiency of fast neutrons in organic scintillator arrays, imaging efficiency for double scatter cameras can also be low. One method to realize significant gains in neutron coincidence detection efficiency is to develop neutron double scatter detectors which employ monolithic blocks of organic scintillator, instrumented with photosensor arrays on multiple faces to enable 3D position and multi-interaction time pickoff. Silicon photomultipliers (SiPMs) have several advantageous characteristics for this approach, including high photon detection efficiency (PDE), good single photon time resolution (SPTR), high gain that translates to single photon counting capabilities, and ability to be tiled into large arrays with high packing fraction and photosensitive area fill factor. However, they also have a tradeoff in high uncorrelated and correlated noise rates (dark counts from thermionic emissions and optical photon crosstalk generated during avalanche) which may complicate event positioning algorithms. We have evaluated the noise characteristics and SPTR of Hamamatsu S13360-6075 SiPMs with low noise, fast electronic readout for integration into a monolithic neutron scatter camera prototype. The sensors and electronic readout were implemented in a small-scale prototype detector in order to estimate expected noise performance for a monolithic neutron scatter camera and perform proof-of-concept measurements for scintillation photon counting and three-dimensional event positioning.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Fabrication of single color centers in sub-50 nm nanodiamonds using ion implantation

Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV – ) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye–Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)-based SiV – centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV – centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV– centers featuring stable high-purity single-photon emission through Si implantation into NDs with an average size of ~20 nm. We observe room temperature emission, with zero-phonon line wavelengths in the range of 730–800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group-IV diamond color centers with applications in quantum photonics, sensing, and biomedicine.

36 MATERIALS SCIENCE↗
NASA NTRS1972

The response of a 0.03-cm silicon detector to a mixed neutron and gamma field as a function of shield material and thickness

The neutron and gamma radiation from a MHW-RTG was used to evaluate the total response of a shielded 0.3-mm silicon detector. The generator employs a 2200 W(th) PuO2 heat source concept known as the HELIPAK. The total integrated neutron and gamma ray fluxes at 100 cm away from the source along the radial direction were 1.67 x 1,000 n/sq cm/s and 1.49 x 10,000 gamma sq cm/s, respectively. Experimental values of the response function of the shielded silicon detector were used to determine the total counting rates due to photons at bias energies ranging from 50 to 200 keV. For neutrons, analytically computed response functions were used to determine the total counting rates at the same bias energies. It was found that for an aluminum shield the neutrons are not significant, regardless of the thickness of the shield. However, the magnitude of the total counting rate due to neutrons increases with increased atomic number of the shield and becomes comparable to the counting rate due to photons for a platinum shield thickness of 5 cm.

Taherzadeh, M.↗
DOE OSTI2026

Characterization of lateral amorphous selenium photodetectors for low-photon and VUV detection at cryogenic temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies ≥80% and area under the curve (AUC) ≥ 0.85 using as few as ∼ 6800 incident 401 nm photons, corresponding to ∼ 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

Amorphous selenium↗
DOE OSTI2025

Characterization of Lateral Amorphous Selenium Photodetectors for Low-Photon and VUV Detection at Cryogenic Temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies greater than or equal to 80 percent and area under the curve (AUC) greater than or equal to 0.85 using as few as approximately 6800 incident 401 nm photons, corresponding to approximately 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

FOS: Physical sciences↗
DOE OSTI2020

Photonic devices fabricated from (111)‐oriented single crystal diamond

Abstract Diamond is a material of choice in the pursuit of integrated quantum photonic technologies. So far, the majority of photonic devices fabricated from diamond are made from (100)‐oriented crystals. In this work, we demonstrate a methodology for the fabrication of optically active membranes from (111)‐oriented diamond. We use a liftoff technique to generate membranes, followed by chemical vapor deposition of diamond in the presence of silicon to generate homogenous silicon vacancy color centers with emission properties that are superior to those in (100)‐oriented diamond. We further use the diamond membranes to fabricate microring resonators with quality factors exceeding ~ 3000. Supported by finite‐difference time‐domain calculations, we discuss the advantages of (111)‐oriented structures as building blocks for quantum nanophotonic devices. image

Regan, Blake↗
DOE OSTI2023

Controlling Valley-Specific Light Emission from Monolayer MoS 2 with Achiral Dielectric Metasurfaces

Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically manipulated for quantum information processing. Here, we integrate MoS 2 monolayers with achiral silicon disk array metasurfaces to enhance and control valley-specific absorption and emission. Through the coupling to the metasurface electric and magnetic Mie modes, the intensity and lifetime of the emission of neutral excitons, trions, and defect bound excitons can be enhanced and shortened, respectively, while the spectral shape can be modified. Additionally, the degree of polarization (DOP) of exciton and trion emission from the valley can be symmetrically enhanced at 100 K. The DOP increase is attributed to both the metasurface-enhanced chiral absorption of light and the metasurface-enhanced exciton emission from the Purcell effect. Finally, combining Si-compatible photonic design with large-scale 2D materials integration, our work makes an important step toward on-chip valleytronic applications approaching room-temperature operation.

2D materials↗
NASA NTRS2007

Imaging Spectrometer on a Chip

A proposed visible-light imaging spectrometer on a chip would be based on the concept of a heterostructure comprising multiple layers of silicon-based photodetectors interspersed with long-wavelength-pass optical filters. In a typical application, this heterostructure would be replicated in each pixel of an image-detecting integrated circuit of the active-pixel-sensor type (see figure). The design of the heterostructure would exploit the fact that within the visible portion of the spectrum, the characteristic depth of penetration of photons increases with wavelength. Proceeding from the front toward the back, each successive long-wavelength-pass filter would have a longer cutoff wavelength, and each successive photodetector would be made thicker to enable it to absorb a greater proportion of incident longer-wavelength photons. Incident light would pass through the first photodetector and encounter the first filter, which would reflect light having wavelengths shorter than its cutoff wavelength and pass light of longer wavelengths. A large portion of the incident and reflected shorter-wavelength light would be absorbed in the first photodetector. The light that had passed through the first photodetector/filter pair of layers would pass through the second photodetector and encounter the second filter, which would reflect light having wavelengths shorter than its cutoff wavelength while passing light of longer wavelengths. Thus, most of the light reflected by the second filter would lie in the wavelength band between the cutoff wavelengths of the first and second filters. Thus, further, most of the light absorbed in the second photodetector would lie in this wavelength band. In a similar manner, each successive photodetector would detect, predominantly, light in a successively longer wavelength band bounded by the shorter cutoff wavelength of the preceding filter and the longer cutoff wavelength of the following filter.

Wang, Yu↗
DOE OSTI2024

Nonreciprocal Dissipation Engineering via Strong Coupling with a Continuum of Modes

Optical nonreciprocity plays a key role in almost every optical system, directing light flow and protecting optical components from backscattered light. Controllable forms of on-chip nonreciprocity are needed for the robust operation of increasingly sophisticated photonic integrated circuits (PICs) in the context of classical and quantum computation, networking, communications, and sensing. However, it has been challenging to achieve wideband, low-loss optical nonreciprocity on-chip. In this paper, we demonstrate strong coupling and Rabi-like energy exchange between photonic bands, possessing a continuum of modes, to unlock nonreciprocity and frequency translation over wide optical bandwidths in silicon. Using a traveling-wave phonon field to drive indirect interband photonic transitions, we demonstrate band hybridization that enables an intriguing form of nonreciprocal dissipation engineering. Using the converted mode to create a nonreciprocal dissipation channel, we demonstrate a frequency-neutral, low-loss (less than 1 dB) isolator with high nonreciprocal contrast (more than 14 dB) and broad operating bandwidth (more than 59 GHz). Additionally, through the implementation of complete interband conversion, we demonstrate a high extinction (more than 55 dB) optical frequency translation operation with near-unity efficiency.

Zhou, Yishu↗
DOE OSTI2024

Setups for eliminating static charge of the ATLAS18 strip sensors

Abstract Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration to beable to track charged particles produced at the High-Luminosity LHC, started in 2020 and is expected tocontinue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-psilicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on each individual sensor check the overall integrity and quality of the sensor.During the QC testing of ATLAS18 strip sensors, an increased number of sensors thatfailed the electrical tests was observed. In particular, IV measurements indicated an early breakdown,while large areas containing several tens or hundreds of neighbouring strips with low interstrip isolationwere identified by the Full strip tests, and leakage current instabilities were measured in a long-term leakage current stability setup. Moreover, a high surface electrostatic charge reaching a level of several hundreds of volts per inch was measured on a large number of sensors and on the plastic sheets, whichmechanically protect these sensors in their paper envelopes. Accumulated data indicates a clearcorrelation between observed electrical failures and the sensor charge-up.To mitigate the above-described issues, the QC testing sites significantly modified the sensor handlingprocedures and introduced sensor recovery techniques based on irradiation of the sensor surface with UVlight or application of intensive flows of ionized gas. In this presentation, we will describe the setupsimplemented by the QC testing sites to treat silicon strip sensors affected by static charge andevaluate the effectiveness of these setups in terms of improvement of the sensor performance.

Instruments & Instrumentation↗
NASA NTRS2007

Compact Packaging of Photonic Millimeter-Wave Receiver

A carrier structure made from a single silicon substrate is the basis of a compact, lightweight, relatively inexpensive package that holds the main optical/electronic coupling components of a photonic millimeter-wave receiver based on a lithium niobate resonator disk. The design of the package is simple and provides for precise relative placement of optical components, eliminating the need for complex, bulky positioning mechanisms like those commonly used to align optical components to optimize focus and coupling. Although a prototype of the package was fabricated as a discrete unit, the design is amenable to integration of the package into a larger photonic and/or electronic receiver system. The components (see figure) include a lithium niobate optical resonator disk of 5-mm diameter and .200- m thickness, positioned adjacent to a millimeter- wave resonator electrode. Other components include input and output coupling prisms and input and output optical fibers tipped with ball lenses for focusing and collimation, respectively. Laser light is introduced via the input optical fiber and focused into the input coupling prism. The input coupling prism is positioned near (but not in contact with) the resonator disk so that by means of evanescent-wave coupling, the input laser light in the prism gives rise to laser light propagating circumferentially in guided modes in the resonator disk. Similarly, a portion of the circumferentially propagating optical power is extracted from the disk by evanescent-wave coupling from the disk to the output coupling prism, from whence the light passes through the collimating ball lens into the output optical fiber. The lens-tipped optical fibers must be positioned at a specified focal distance from the prisms. The optical fibers and the prisms must be correctly positioned relative to the resonator disk and must be oriented to obtain the angle of incidence (55 in the prototype) required for evanescent-wave coupling of light into and out of the desired guided modes in the resonator disk. To satisfy all these requirements, precise alignment features are formed in the silicon substrate by use of a conventional wet-etching process. These features include a 5-mm-diameter, 50- m-deep cavity that holds the disk; two trapezoidal-cross-section recesses for the prisms; and two grooves that hold the optical fibers at the correct positions and angles relative to the prisms and disk. The fiber grooves contain abrupt tapers, near the prisms, that serve as hard stops for positioning the lenses at the focal distance from the prisms. There are also two grooves for prismadjusting rods. The design provides a little slack in the prism recesses for adjusting the positions of the prisms by means of these rods to optimize the optical coupling.

Nguyen, Hung↗
DOE OSTI2025

Spin Decoherence Dynamics of Er 3+ in CeO 2 Films

Developing telecom-compatible spin-photon interfaces is essential towards scalable quantum networks. Erbium ions (Er 3+ ) exhibit a unique combination of a telecom (1.5 mu m) optical transition and an effective spin-1=2 ground state, but identifying a host that enables heterogeneous device integration while preserving long optical and spin coherence remains an open challenge. In this work, we explore the potential of Er 3+ :CeO 2 films on silicon and study the Er 3+ spin coherence, offering low nuclear spin density and the potential for on-chip integration. We demonstrate a 38.8 mu s spin coherence, which can be extended to 176.4 mu s with dynamical decoupling. Pairing experiments with cluster correlation expansion calculations, we identify spectral diffusion induced by bath Er 3+ spin flip-flops as the dominant decoherence mechanism and provide pathways to millisecond-scale coherence.

36 MATERIALS SCIENCE↗