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This is the required paper summarizing the poster presentation material to be presented at The 25th European Microelectronics & Packaging Conference (EMPC 2025) (16 – 18 September 2025). The paper will be associated with the conference presentation in the conference proceedings
A vertical heterojunction barrier Schottky diode was fabricated by combining a p-type SnO film array with a β-Ga 2 O 3 substrate, yielding a lower reverse leakage current and an improved breakdown voltage than its Schottky barrier diode counterpart.
Organic electrochemical transistors (OECTs) enable the transduction of ionic signals into electronic outputs, positioning them as ideal candidates for next-generation sensing and (bio)signal processing applications. Recent years have witnessed the development of various OECT channel materials, affording insights into structural fine-tuning to achieve optimal performance and/or stability. However, homocouplings, commonly present in alternating conjugated polymers, have largely been overlooked. This study investigates the effect of homocoupling on OECT materials by employing two synthesis methods – standard Stille polymerization and an alternative symmetric approach – to create the p-type enhancement-mode benchmark polymer pgBTTT. The impact of homocoupling, and its absence, is studied by comparing the bulk properties of the two polymers and evaluating their respective OECT metrics. The new, homocoupling-free polymer exhibits a notably improved OECT performance ( μC *), mainly due to an average 3-fold increase in electronic mobility (μ).
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CUPID, the CUORE Upgrade with Particle Identification, is a next-generation experiment to search for neutrinoless double beta decay (0 νββ ) and other rare events using enriched Li 2 100 MoO 4 scintillating bolometers. It will be hosted by the CUORE cryostat located at the Laboratori Nazionali del Gran Sasso in Italy. The main physics goal of CUPID is to search for 0 νββ of 100 Mo with a discovery sensitivity covering the full neutrino mass regime in the inverted ordering scenario, as well as the portion of the normal ordering regime with lightest neutrino mass larger than 10 meV. With a conservative background index of 10 −4 cts/(keV·kg·yr), 240 kg isotope mass, 5 keV FWHM energy resolution at 3 MeV and 10 live-years of data taking, CUPID will have a 90% C.L. half-life exclusion sensitivity of 1.8 · 10 27 yr, corresponding to an effective Majorana neutrino mass ( m ββ ) sensitivity of 9–15 meV, and a 3σ discovery sensitivity of 1 · 10 27 yr, corresponding to an m ββ range of 12–21 meV.
Publisher Erratum: Eur. Phys. J. C (2025) 85:737 https://doi.org/10.1140/epjc/s10052-025-14352-1 The author M. Pavan (affiliations 9 and 10) was missing from the published author list. The online version of the article has been updated to include the author. Additionally, affiliations 4 and 17 have been corrected to reflect the proper institutional order. The publisher apologizes for the inconvenience caused.
Cryogenic calorimeters are among the leading technologies for searching for rare events. The CUPID experiment is exploiting this technology to deploy a tonne-scale detector to search for neutrinoless double-beta decay of 100 Mo. The CUPID collaboration proposed an innovative approach to assembling cryogenic calorimeters in a stacked configuration, held in position solely by gravity. This gravity-based assembly method is unprecedented in the field of cryogenic calorimeters and offers several advantages, including relaxed mechanical tolerances and simplified construction. To assess and optimize its performance, we constructed a medium-scale prototype hosting 28 Li 2 MoO 4 crystals and 30 Ge light detectors, both operated as cryogenic calorimeters at the Laboratori Nazionali del Gran Sasso (Italy). Despite an unexpected excess of noise in the light detectors, the results of this test proved (i) a thermal stability better than ±0.5 mK at 10 mK, (ii) a good energy resolution of Li 2 MoO 4 cryogenic calorimeters, (6.6 ± 2.2) keV FWHM at 2615 keV, and (iii) a Li 2 MoO 4 light yield measured by the closest light detector of 0.36 keV/MeV, sufficient to guarantee the particle identification requested by CUPID.
In the originally published version of this article, several errors were identified in the author list and acknowledgements section. These have now been corrected as follows: Corrections to the Author List: Barrera has been corrected to Barresi. Copello (affiliation 18) has been corrected to Copello (affiliation 19). F. De Domizio has been corrected to S. Di Domizio. Figueros-Feliciamo has been corrected to Figueroa-Feliciano. Mancarella (affiliations 8, 17) has been corrected to Mancarella (affiliations 8, 18). Manenti (affiliations 18, 19) has been corrected to Manenti (affiliations 19, 20). Mayer (affiliations 3, 20, 31) has been corrected to Mayer (affiliations 3, 21, 31). Pagot has been corrected to Pageot. Puranam (affiliation 20) has been corrected to Puranam (affiliation 21). O. Penek has been corrected to Ö. Penek. L. Pettinacci has been corrected to V. Pettinacci. P. Pirro has been corrected to S. Pirro. Previtale has been corrected to Previtali. Rappoldi (affiliation 18) has been corrected to Rappoldi (affiliation 19). Raselli (affiliation 18) has been corrected to Raselli (affiliation 19). Rizzoli (affiliations 8, 17) has been corrected to Rizzoli (affiliations 8, 18). Rossella (affiliation 18) has been corrected to Rossella (affiliation 19). Correction to the Acknowledgements Section: The following grant numbers were missing and have now been added: This work was supported by NSF-PHY-2412377 and NSF-PHY-1913374. Additionally, on page 11, Section 5, second line, the chemical formula was incorrectly given as Li 2 MO 4 . The correct formula is Li 2 MoO 4 . The original article has been updated to reflect these corrections. The publisher apologizes for the inconvenience.
CUPID is a next-generation bolometric experiment to search for neutrinoless double-beta decay ($0\nu \beta \beta$ ) of 100 Mo using Li 2 MoO 4 scintillating crystals. It will operate 1596 crystals at ~10 mK in the CUORE cryostat at the Laboratori Nazionali del Gran Sasso in Italy. Each crystal will be facing two Ge-based bolometric light detectors for α rejection. We compute the discovery and the exclusion sensitivity of CUPID to $0\nu \beta \beta$ in a Frequentist and a Bayesian framework. This computation is done numerically based on pseudo-experiments. For the CUPID baseline scenario, with a background and an energy resolution of 1.0 x 10 –4 counts/keV/kg/yr and 5 keV FWHM at the Q-value, respectively, this results in a Bayesian exclusion sensitivity (90% c.i.) of $\hat{T}_{1/2} > 1.6 \times 10^{27} \ \textrm{yr}$, corresponding to the effective Majorana neutrino mass of $\hat{m}_{\beta \beta } < \ 9.6$ – 28 meV. The Frequentist discovery sensitivity (3σ ) is $\hat{T}_{1/2}= 1.0 \times 10^{27} \ \textrm{yr}$, corresponding to $\hat{m}_{\beta \beta }= \ 12$ – 36 meV.
Alloying is one of the main tools of bandgap engineering, allowing the tuning of crystal structure, lattice parameters, and electronic structure of 3D and 2D/layered semiconductors. Among the latter, it can play a key role in tailoring the properties of tin monochalcogenides, a class of van der Waals semiconductors of interest for optoelectronics, thermoelectrics, ferroelectrics, and valleytronics. Here, the study investigates the synthesis and properties of large flakes of the anion substitution alloys SnSe 1-x S x . Alloy flakes across a wide range of compositions are obtained systematically by repeated growth from the same mixed (SnS, SnSe) powder precursor. Combined experiment and theory show full miscibility for all compositions, along with tunable lattice constants, bandgaps, and vibrational modes. Atomic resolution imaging demonstrates the accumulation of S and Se in alternating layers in the SnSe 1-x S x unit cell, attributed to growth kinetics. Polarized Raman spectroscopy confirms anisotropic vibrational modes; the calculated and measured band structure shows systematic changes in the band edge energies and anisotropic electronic structure due to the anisotropic in-plane lattice of the monochalcogenides. Cathodoluminescence, finally, indicates that a unique configuration of two non-degenerate, direct valleys along orthogonal k-space directions persists all the way from SnS to SnSe, making SnSe 1-x S x alloys interesting for valleytronics.
Engineering the properties of semiconductors by changing their crystalline phase is a technologically and economically relevant alternative to doping using foreign elements, with strong potential for photonic and electronic applications. Although major advances have been reported recently for crystal‐phase engineering of III‐V and group IV semiconductor nanowires, interfacing two mismatched crystalline phases in a nanostructure induces several deformation mechanisms, which remain largely unexplored. Here, using state‐of‐the‐art synchrotron X‐ray nanobeam diffraction and transmission electron microscopy, subtle twisting and bending is unveiled within an individual GaAs nanowire containing cubic and hexagonal segments. Their role is discussed in accommodating the inter‐reticular spacing fluctuations, and their variations are correlated to the nanoscale phase distribution and to the effect of the NW support. This study brings direct evidence of a complex combination of deformation mechanisms in biphasic nanowires, which opens a new path to tune the nanowire properties with appealing perspectives for device engineering in nanophotonics and nanomechanics.
Quantum states can provide means to systematically manipulate the transport of electrons. Here, in this study, we present electron transport across quasi-bound states of two heterogeneous quantum wells (QWs), where the transport of thermally excited electrons is blocked or enabled depending on the relative positions of the two quasi-bound states, with an abrupt current onset occurring when the two QW states align. The QW switch comprises a source (Cr), QW1 (Cr 2 O 3 ), QW2 (SnO x , x < 2), a tunneling barrier (SiO 2 ), and a drain (Si), where the effective electron mass of QW1 (m* QW1 ) is selected to be larger than QW2 (m* QW2 ). The current-voltage (I-V) measurements of the fabricated devices show abrupt current onsets, with the current transition occurring within 0.25 mV, corresponding to an effective electron temperature of 0.8 K at room temperature. Since transistor power consumption is fundamentally tied to effective electron temperature, this sub-1K cold-electron QW switching holds promise for highly energy-efficient computing.
The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.
K-means clustering analysis is applied to frequency-domain thermoreflectance (FDTR) hyperspectral image data to rapidly screen the spatial distribution of thermophysical properties at material interfaces. Performing FDTR while raster scanning a sample consisting of 8.6 μm of doped-silicon (Si) bonded to a doped-Si substrate identifies spatial variation in the subsurface bond quality. Routine thermal analysis at select pixels quantifies this variation in bond quality and allows assignment of bonded, partially bonded, and unbonded regions. Performing this same routine thermal analysis across the entire map, however, becomes too computationally demanding for rapid screening of bond quality. To address this, K-means clustering was used to reduce the dimensionality of the dataset from more than 20 000 pixel spectra to just K = 3 component spectra. The three component spectra were then used to express every pixel in the image through a least-squares minimized linear combination providing continuous interpolation between the components across spatially varying features, e.g., bonded to unbonded transition regions. Fitting the component spectra to the thermal model, thermal properties for each K cluster are extracted and then distributed according to the weighting established by the regressed linear combination. Thermophysical property maps are then constructed and capture significant variation in bond quality over 25 μm length scales. The use of K-means clustering to achieve these thermal property maps results in a 74-fold speed improvement over explicit fitting of every pixel.
Semiconductors are the foundation of modern technology, used in our personal, industrial, and military-grade devices. Further, every aspect of U.S. society is closely tied to semiconductors, and our economy cannot progress at the current pace with existing chip manufacturing methods as chip features approach an atomistic scale.
Advances in ultra-wide bandgap materials, such as high Al-content AlxGa1-xN (AlGaN), are essential for next generation power electronics, but the requirement for lattice matched substrates is currently a significant obstacle. Recently, conductive TaC has emerged as a promising virtual substrate for AlGaN heteroepitaxy, with wurtzite (0001) AlxGa1-xN lattice-matched to rocksalt (111) TaC at x ~ 0.5. Thus, understanding and controlling the electronic properties of the TaC/AlGaN interface is key for developing technological applications based on TaC/AlGaN devices. Using density functional theory and electronic structure calculations, we here investigate TaC/Al0.5Ga0.5N interfaces, where we include explicit alloy models in the slab calculations. We predict the Schottky barrier height and the electric field discontinuity resulting from interface charges. Considering all possible combinations of (Ta, C) substrate termination, (Al/Ga, N) nucleation, and (Al/Ga, N) polarity, we construct a chemical potential phase diagram to identify the stable interfaces that can be accessed through variation of the synthesis conditions. The predicted interface electronic properties are implemented in device performance simulations to demonstrate a practical design for a strain-free, high-efficiency TaC/AlGaN Schottky diode with a low barrier height and without interface charges, underscoring the potential of TaC as a substrate for ultra-wide bandgap devices.
Abstract Compositionally complex materials have demonstrated extraordinary promise for structural robustness in extreme environments. Of these, the most commonly thought of are high entropy alloys, where chemical complexity grants uncommon combinations of hardness, ductility, and thermal resilience. In contrast to these metal–metal bonded systems, the addition of ionic and covalent bonding has led to the discovery of high entropy ceramics (HECs). These materials also possess outstanding structural, thermal, and chemical robustness but with a far greater variety of functional properties which enable access to continuously controllable magnetic, electronic, and optical phenomena. In this experimentally focused perspective, we outline the potential for HECs in functional applications under extreme environments, where intrinsic stability may provide a new path toward inherently hardened device design. Current works on high entropy carbides, actinide bearing ceramics, and high entropy oxides are reviewed in the areas of radiation, high temperature, and corrosion tolerance where the role of local disorder is shown to create pathways toward self-healing and structural robustness. In this context, new strategies for creating future electronic, magnetic, and optical devices to be operated in harsh environments are outlined.
Artificial high-T c superlattices (AHTS) composed of quantum building blocks with tunable superconducting critical temperature have been synthesized by engineering their nanoscale geometry using the Bianconi-Perali Valletta (BPV) two-gap superconductivity theory. These quantum heterostructures consist of quantum wells made of superconducting, modulation-doped Mott insulators (S), confined by a metallic (N) potential barrier. The lattice geometry has been carefully engineered to induce the predicted Fano-Feshbach shape resonance between the gaps, near a topological Lifshitz transition. Here, we validate the BPV theory by providing compelling experimental evidence that AHTS samples, at the peak of the superconducting dome, exhibit resonant two-band, two-gap superconductivity. This is demonstrated by measuring the temperature dependence of the upper critical magnetic field, μ 0 H c2 , in samples with superlattice periods 3.3 < d < 5.28 nm and L/d ratios close to the magic value 2/3 (where L is the thickness of the superconducting La 2 CuO 4 layer and d is the superlattice period). Here, the data reveal the predicted upward concavity in H c2 (T) and a characteristic kink in the coherence length as a function of temperature, confirming the predicted two-band superconductivity with Fermi velocity ratio ≈ 0.25 and significant pair-exchange term among the two condensates.