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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Emergent actin flows explain distinct modes of gliding motility

During host infection, Toxoplasma gondii and related unicellular parasites move using gliding, which differs fundamentally from other known mechanisms of eukaryotic cell motility. Gliding is thought to be powered by a thin layer of flowing filamentous (F)-actin sandwiched between the plasma membrane and a myosin-covered inner membrane complex. How this surface actin layer drives the various gliding modes observed in experiments—helical, circular, twirling and patch, pendulum or rolling—is unclear. Here we suggest that F-actin flows arise through self-organization and develop a continuum model of emergent F-actin flow within the confines provided by Toxoplasma geometry. In the presence of F-actin turnover, our model predicts the emergence of a steady-state mode in which actin transport is largely directed rearward. Removing F-actin turnover leads to actin patches that recirculate up and down the cell, which we observe experimentally for drug-stabilized actin bundles in live Toxoplasma gondii parasites. These distinct self-organized actin states can account for observed gliding modes, illustrating how different forms of gliding motility can emerge as an intrinsic consequence of the self-organizing properties of F-actin flow in a confined geometry.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2023

Multivariate chemogenomic screening prioritizes new macrofilaricidal leads

Development of direct acting macrofilaricides for the treatment of human filariases is hampered by limitations in screening throughput imposed by the parasite life cycle. In vitro adult screens typically assess single phenotypes without prior enrichment for chemicals with antifilarial potential. We developed a multivariate screen that identified dozens of compounds with submicromolar macrofilaricidal activity, achieving a hit rate of >50% by leveraging abundantly accessible microfilariae. Adult assays were multiplexed to thoroughly characterize compound activity across relevant parasite fitness traits, including neuromuscular control, fecundity, metabolism, and viability. Seventeen compounds from a diverse chemogenomic library elicited strong effects on at least one adult trait, with differential potency against microfilariae and adults. Our screen identified five compounds with high potency against adults but low potency or slow-acting microfilaricidal effects, at least one of which acts through a novel mechanism. We show that the use of microfilariae in a primary screen outperforms model nematode developmental assays and virtual screening of protein structures inferred with deep learning. These data provide new leads for drug development, and the high-content and multiplex assays set a new foundation for antifilarial discovery.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

A weakly ion pairing electrolyte designed for high voltage magnesium batteries

High-voltage rechargeable magnesium batteries (RMBs) are potential alternatives to lithium-ion batteries owing to the low cost and high abundance of magnesium. However, the parasitic reactions of the latter with many electrolytes greatly hinders the stability and kinetics of Mg plating/stripping. Here we report a new and easily accessible solvent-designed electrolyte, which effectively solves the difficulty of ion pair dissociation and facilitates fast nanoscale Mg nucleation/growth using simple Mg(TFSI)2 as the salt, enabling a facile interfacial charge transfer process. Dendrite-free Mg plating/stripping is maintained for over 7000 hours (∼10 months) at a practical areal capacity of 2 mA h cm−2. The high-voltage stability of these electrolytes is demonstrated by benchmarking with polyaniline||Mg full cells with an operating voltage up to 3.5 V that exhibit stable cycling at a 2C rate with 99% coulombic efficiency after 400 cycles. This work opens up new frontiers in coupling low-cost electrolytes with next-generation high-voltage cathode materials for fast-charging RMBs with long life and high energy densities.

Li, Chang↗
DOE OSTI2023

Spontaneous mesostructure formation produces optically transmissive Ni–P films that are catalytically active for the photoelectrochemical hydrogen evolution reaction

Ni–P films that are catalytically active for the hydrogen-evolution reaction were electrodeposited onto photoactive Si substrates between 20 °C and 80 °C from an aqueous solution. Ni–P films deposited at 20 °C and exposed to acidic environments spontaneously developed deep cracks. A substantial increase in optical transmission to the semiconducting substrate resulted without affecting the catalytic performance of the film. In contrast, Ni–P films deposited at 80 °C only developed minor surface-level cracks and did not exhibit a substantial increase in optical transmission. During electrodeposition of the Ni–P films at low temperatures, the uptake of parasitically evolved hydrogen generated partially defective Ni–P, causing crack formation. Increases in the temperature of the electrodeposition bath increased the faradaic efficiency of Ni–P deposition and consequently reduced the uptake of parasitically generated hydrogen. The defective Ni–P films were converted to a crack-resistant material by thermally desorbing the excess hydrogen that was absorbed during the low-temperature electrodeposition process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Delineating the impact of Ti/Mg substitution in P2-type Na 2/3 Ni 1/3 Mn 2/3 O 2 with an advanced electrolyte for sodium-ion batteries

Sodium layered oxide cathodes are drawing interest globally as a potential alternative to lithium layered oxides, but they suffer from egregious capacity fade and have intrinsically lower capacity. P2-type Na 2/3 Ni 1/3 Mn 2/3 O 2 is a particularly relevant cathode material as it demonstrates an energy density of up to 550 W h kg −1 at high operating potentials, although this can only be maintained for a handful of cycles with industrial electrolytes. Here, a localized saturated electrolyte (LSE) is shown to significantly improve the cycle life of Na 2/3 Ni 1/3 Mn 2/3 O 2 by suppressing the surface reactivity, despite large volume changes during cycling. The demonstrated influence of surface stability on cycle life in this work challenges the prevailing notion of a popular capacity stabilization strategy with titanium/magnesium co-doping, which is primarily thought to improve cycle life via improved structural stability. Single crystals of Na 2/3 Ni 1/3−x Mg x Mn 2/3−2x Ti 2x O 2 (x = 0, 1/48, 1/24, 1/12) materials are cycled with a traditional electrolyte and the LSE to demonstrate that despite eliminating the phase transition with dopants in Na 2/3 Ni 1/4 Mg 1/12 Mn 1/2 Ti 1/6 O 2 , the predominant role of the dopants is in reducing the parasitic oxygen reactivity at the cathode surface. The different roles these dopants play are systematically disambiguated, and this work can guide future research to focus on reducing the parasitic cathode/electrolyte reactivity further.

25 ENERGY STORAGE↗
DOE OSTI2021

A 1D Lyman-alpha profile camera for plasma edge neutral studies on the DIII-D tokamak

A one dimensional, absolutely calibrated pinhole camera system was installed on the DIII-D tokamak to measure edge Lyman-alpha (Ly-α) emission from hydrogen isotopes, which can be used to infer neutral density and ionization rate profiles. The system is composed of two cameras, each providing a toroidal fan of 20 lines of sight, viewing the plasma edge on the inboard and outboard side of DIII-D. The cameras’ views lie in a horizontal plane 77 cm below the midplane. At its tangency radius, each channel provides a radial resolution of ~2 cm full width at half maximum (FWHM) with a total coverage of 22 cm. Each camera consists of a rectangular pinhole, Ly-α reflective mirror, narrow-band Ly-α transmission filter, and a 20 channel AXUV photodetector. The combined mirror and transmission filter have a FWHM of 5 nm, centered near the Ly-α wavelength of 121.6nm and is capable of rejecting significant, parasitic carbon-III (C-III) emission from intrinsic plasma impurities. To provide a high spatial resolution measurement in a compact footprint, the camera utilizes advanced engineering and manufacturing techniques including 3D printing, high stability mirror mounts, and a novel alignment procedure. Absolutely calibrated, spatially resolved Ly-α brightness measurements utilize a bright, isolated line with low parasitic surface reflections and enable quantitative comparison to modeling to study divertor neutral leakage, main chamber fueling, and radial particle transport.

Ionization Rate↗
DOE OSTI2021

Bulk dissipation in the quantum anomalous Hall effect

Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb) 2 Te 3 . We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhancing the electron mobility in Si-doped (010) β-Ga 2 O 3 films with low-temperature buffer layers

We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga 2 O 3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga 2 O 3 buffer was grown, followed by a transition layer to a high-temperature (HT, 810 °C) Si-doped Ga 2 O 3 channel layers without growth interruption. The (010) Ga 2 O 3 Fe-doped substrate cleaning uses solvent cleaning, followed by additional hydrofluoric acid (49% in water) treatment for 30 min before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer–substrate interface that originates from the substrate polishing process or contamination from the ambient. From secondary ion mass spectroscopy (SIMS) analysis, the Si peak atomic density at the substrate interface is found to be several times lower than the Fe atomic density in the substrate—indicating full compensation. The elimination of the parasitic electron channel at the epi–substrate interface was also verified by electrical (capacitance–voltage profiling) measurements. In the LT-grown (600 °C) buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp, with a decay rate of ∼9 nm/dec. X-ray off-axis rocking curve ω-scans show very narrow full width at half maximum (FWHM) values, similar to the as-received substrates. These channels show record high electron mobility in the range of 196–85 cm 2 /V⋅s in unintentionally doped and Si-doped films in the doping range of 2 × 10 16 –1 × 10 20 cm −3 . Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT buffers. Record high electron Hall mobility of 110 cm 2 /V⋅s was measured for sheet charge density of 9.2 × 10 12 cm −2 . This substrate cleaning, combined with the LT buffer scheme, shows the potential of designing Si-doped β-Ga 2 O 3 channels with exceptional transport properties for high-performance Ga 2 O 3 -based electron devices.

Bhattacharyya, Arkka↗
DOE OSTI2023

Insights into the Ecological Diversification of the Hymenochaetales based on Comparative Genomics and Phylogenomics With an Emphasis on Coltricia

To elucidate the genomic traits of ecological diversification in the Hymenochaetales, we sequenced 15 new genomes, with attention to ectomycorrhizal (EcM) Coltricia species. Together with published data, 32 genomes, including 31 Hymenochaetales and one outgroup, were comparatively analyzed in total. Compared with those of parasitic and saprophytic members, EcM species have significantly reduced number of plant cell wall degrading enzyme genes, and expanded transposable elements, genome sizes, small secreted proteins, and secreted proteases. EcM species still retain some of secreted carbohydrate-active enzymes (CAZymes) and have lost the key secreted CAZymes to degrade lignin and cellulose, while possess a strong capacity to degrade a microbial cell wall containing chitin and peptidoglycan. There were no significant differences in secreted CAZymes between fungi growing on gymnosperms and angiosperms, suggesting that the secreted CAZymes in the Hymenochaetales evolved before differentiation of host trees into gymnosperms and angiosperms. Nevertheless, parasitic and saprophytic species of the Hymenochaetales are very similar in many genome features, which reflect their close phylogenetic relationships both being white rot fungi. Phylogenomic and molecular clock analyses showed that the EcM genus Coltricia formed a clade located at the base of the Hymenochaetaceae and divergence time later than saprophytic species. And Coltricia remains one to two genes of AA2 family. These indicate that the ancestors of Coltricia appear to have originated from saprophytic ancestor with the ability to cause a white rot. This study provides new genomic data for EcM species and insights into the ecological diversification within the Hymenochaetales based on comparative genomics and phylogenomics analyses.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

Linear Quantum Coupler for Clean Bosonic Control

Quantum computing with superconducting circuits relies on high-fidelity driven nonlinear processes. An ideal quantum nonlinearity would selectively activate desired coherent processes at high strength, without activating parasitic mixing products or introducing additional decoherence. The wide bandwidth of the Josephson nonlinearity makes this difficult, with undesired drive-induced transitions and decoherence limiting qubit readout, gates, couplers, and amplifiers. Significant strides have recently been made into building better “quantum mixers,” with promise being shown by Kerr-free three-wave mixers that suppress driven frequency shifts, and balanced quantum mixers that explicitly forbid a significant fraction of parasitic processes. We propose a novel mixer that combines both these strengths, with engineered selection rules that make it essentially linear (not just Kerr-free) when idle, and activate clean parametric processes even when driven at high strength. Furthermore, its ideal Hamiltonian is simple to analyze analytically, and we show that this ideal behavior is first-order insensitive to dominant experimental imperfections. We expect this mixer to allow significant advances in high-𝑄 control, readout, and amplification.

Quantum circuits↗
DOE OSTI2020

Loop Antennas for Use On/Off Ground Planes

Many applications benefit from the ability of an RFID tag to operate both on and off a conducting ground plane. This paper presents an electrically small loop antenna at 433 MHz that passively maintains its free-space tune and match when located a certain distance away from a large conducting ground plane. The design achieves this using a single radiation mechanism (that of a loop) in both environments without the use of a ground plane or EBG/AMC structure. An equivalent circuit model is developed that explains the dual-environment behavior and shows that the geometry balances inductive and capacitive parasitics introduced by the ground plane such that the free-space loop reactance, and thus resonant frequency, does not change. A design equation for balancing the inductive and capacitive parasitic effects is derived. Finally, experimental data showing the design eliminates ground plane detuning in practice is presented. The design is suitable for active, “hard” RFID tag applications.

42 ENGINEERING↗
DOE OSTI2023

Effects of Encapsulant Properties on the Thermo-Mechanical Reliability of Double-Side Cooled Power Modules for Traction Inverters

Double-side cooled power modules are being developed for next-generation traction inverters due to their better heat extraction, lower profile, and lower parasitic inductances. However, due to their rigid structure, they cause reliability concerns arising from high thermo-mechanical stresses at the interconnection joints in the module. In this work, a materials-based approach using rigid encapsulants is presented for reducing thermo-mechanical fatigue. Finite-element thermo- mechanical simulations were performed to examine the effects of the elastic modulus and coefficient of thermal expansion of epoxy- based encapsulants on the bond deformation inside a double-side cooled power module. It was found that a rigid encapsulant with a high modulus of 6.0 GPa or above and a coefficient of thermal expansion around 20 ppm/oC would improve the thermo- mechanical reliability of double-side cooled power modules by decreasing the permanent bond deformation inside the modules by 50-60%.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
DOE OSTI2022

Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation

The efficiency potential of double-side tunnel oxide passivated contact (DS-TOPCon) solar cells is limited by parasitic absorption in the front poly-Si layer, despite excellent passivation and high V OC . The use of patterned poly-Si only under the front metal grid lines can significantly reduce the parasitic absorption loss without sacrificing voltage. In this work, we demonstrate a simple, manufacturing-friendly method of patterning the front poly-Si using a nanosecond UV (355 nm) laser. We found that with laser powers ≥3 W at a 400 mm/s scan speed, an estimated 1–4 nm thick stoichiometric SiO 2 layer was grown on TOPCon. This served as a mask for KOH-etching of 200 nm poly-Si, allowing for patterning of poly-Si fingers required for selective TOPCon. While laser powers above 3 W caused substantial deterioration in passivation quality, the resulting damage in J 0 was largely recovered by subsequent PECVD SiN x deposition. At 3 W, the full area J 0 was found to be 36.8 fA·cm –2 . Furthermore, this translates to 1.68 fA·cm –2 for 4.48% coverage from the wing area of the polyfinger lines (100 lines–100 μm wide and 30 μm metal) contributing to a total front J 0 of ~10 fA·cm –2 , well suited for 25% efficient solar cells

42 ENGINEERING↗
DOE OSTI2021

Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

On the Efficacy of Repeat Voltage Holds for Conditioning and Calendar Life Testing of Graphite and Silicon Cells

Voltage-hold (V-hold) protocols have shown promise toward calendar lifetime analysis of cells with graphite (Gr) and silicon (Si) anodes. In this work, repeat V-holds are performed on Gr and Si cells paired with lithium iron phosphate cathodes to delineate their beneficial role in formation and conditioning. We find that V-hold at the top of charge supplements constant current cycling in conditioning the cell to higher capacities for both Gr and Si cells after the first V-hold. A reduced order model provides the irreversible capacity proportions of each V-hold. With each repeat V-hold, parasitic loss of lithium to the solid electrolyte interphase (SEI) decreases on both Gr and Si cells. Gr cells show the square-root-of-time capacity loss behavior within 200 h of V-hold, indicative of its fast relaxation and low impact of reference performance test cycles on the SEI growth. Lifetime estimates from repeat V-holds on Gr can reach years. Si exhibits longer transition times from kinetic to diffusion-limited SEI growth, evidenced by the 400 h and 200 h holds showing square-root-of-time and linear behavior, respectively. Lifetime predictions from repeat V-holds on Si only reach 1–2 months, highlighting its limitations. Recommended duration of V-holds for Si cells should be ≥400 h.

25 ENERGY STORAGE↗
DOE OSTI2022

A long-life lithium-oxygen battery via a molecular quenching/mediating mechanism

The advancement of lithium-oxygen (Li-O 2 ) batteries has been hindered by challenges including low discharge capacity, poor energy efficiency, severe parasitic reactions, etc. We report an Li-O 2 battery operated via a new quenching/mediating mechanism that relies on the direct chemical reactions between a versatile molecule and superoxide radical/Li 2 O 2 . The battery exhibits a 46-fold increase in discharge capacity, a low charge overpotential of 0.7 V, and an ultralong cycle life >1400 cycles. Featuring redox-active 2,2,6,6-tetramethyl-1-piperidinyloxy moieties bridged by a quenching-active perylene diimide backbone, the tailor-designed molecule acts as a redox mediator to catalyze discharge/charge reactions and serves as a reusable superoxide quencher to chemically react with superoxide species generated during battery operation. The all-in-one molecule can simultaneously tackle issues of parasitic reactions associated with superoxide radicals, singlet oxygen, high overpotentials, and lithium corrosion. The molecular design of multifunctional additives combining various capabilities opens a new avenue for developing high-performance Li-O 2 batteries.

25 ENERGY STORAGE↗
DOE OSTI2025

Identifying a next-generation antimalarial trioxolane in a landscape of artemisinin partial resistance

For over two decades, artemisinin-based combination therapy (ACT) has been the standard of care for the treatment of uncomplicated falciparum malaria. However, artemisinin partial resistance (ART-R) is now prevalent in Southeast Asia and has emerged in eastern Africa, threatening ACT efficacy. Artefenomel, a synthetic 1,2,4-trioxolane, exhibits an extended pharmacokinetic exposure profile that predicts for efficacy against ART-R parasites. Unfortunately, the development of artefenomel was halted recently after almost a decade in the clinic. Here, we describe studies of an artefenomel-adjacent chemotype that combines potent in vitro activity against clinical ART-R parasites, an extended pharmacokinetic profile with single-exposure efficacy in a murine malaria model, and enhanced stability in human microsomes and hepatocytes. Overall, our studies reveal a heretofore underexplored trioxolane chemotype with the potential to address ART-R in a next-generation trioxolane development candidate.

Science & Technology - Other Topics↗